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    gw 360

    Abstract: No abstract text available
    Text: EDI2GG432128V 4x128Kx32 Synchronous SRAM CARD EDGE DIMM FEATURES • 4x128Kx32 Synchronous The EDI2GG432128VxxD is a Synchronous SRAM, 60 position Card Edge; DIMM 120 contacts Module, organized as 4x128Kx32. The Module contains four (4) Synchronous Burst Ram Devices,


    Original     		PDF EDI2GG432128V 4x128Kx32 EDI2GG432128VxxD 4x128Kx32. 14mmx20mm EDI2GG432128V95D* EDI2GG432128V10D* EDI2GG432128V11D EDI2GG432128V12D gw 360

    128*64

    Abstract: transistor GW 93 H GW 94 H
    Text: EDI2KG464128V 4 Megabyte Synchronous Card Edge DIMM Advanced 4x128Kx64, 3.3V Synchronous Flow-Through Module Features • 4x128Kx64 Synchronous • Flow-Through Architecture • Clock Controlled Registered Bank Enables E1\, E2\, E3, E4\ • Clock Controlled Registered Address


    Original     		PDF EDI2KG464128V 4x128Kx64, 4x128Kx64 EDI2KG64128VxxD 01581USA EDI2KG464128V 128*64 transistor GW 93 H GW 94 H

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY INFORMATION L9D222G72BG3 2.2 Gb, DDR2, 32 M x 72 Integrated Module IMOD Benefits FEATURES DDR2 SDRAM Data Rate = 800,667,533 and 400Mbps Available in INDUSTRIAL, EXTENDED and MIL-TEMP Package: 16mm x 22mm – 208PBGA, 1.00mm pitch Differential Data Strobe (DQS, DQSx\) per byte


    Original     		PDF L9D222G72BG3 400Mbps 208PBGA, LDS-L9D222G72BG3-B

    Untitled

    Abstract: No abstract text available
    Text: W3J512M64K-XPBX W3J512M64K-XLBX *ADVANCED 4GB – 512M x 64 DDR3 SDRAM 1.35V – 543 PBGA Multi-Chip Package FEATURES  Address/control terminations included  DDR3 Data Rate = 800, 1,066, 1333, 1600* Mb/s  Differential clock terminations included


    Original     		PDF W3J512M64K-XPBX W3J512M64K-XLBX

    Untitled

    Abstract: No abstract text available
    Text: W3J512M64G-XPBX W3J512M64G-XLBX 4GB – 512M x 64 DDR3 SDRAM – 1.5V – 543 PBGA Multi-Chip Package FEATURES  Address/control terminations included  DDR3 Data Rate = 800, 1066, 1333, 1600* Mb/s  Differential clock terminations included


    Original     		PDF W3J512M64G-XPBX W3J512M64G-XLBX

    Untitled

    Abstract: No abstract text available
    Text: W3J512M64G-XPBX W3J512M64G-XLBX 4GB – 512M x 64 DDR3 SDRAM – 1.5V – 543 PBGA Multi-Chip Package FEATURES  Address/control terminations included  DDR3 Data Rate = 800, 1066, 1333, 1600* Mb/s  Differential clock terminations included


    Original     		PDF W3J512M64G-XPBX W3J512M64G-XLBX

    w3j128m72

    Abstract: w3j512m72
    Text: W3J512M72G-XPBX W3J512M72G-XLBX 4GB – 512M x 72 DDR3 SDRAM – 1.5V – 543 PBGA Multi-Chip Package FEATURES  Address/control terminations included  DDR3 Data Rate = 800, 1066, 1333, 1600* Mb/s  Differential clock terminations included


    Original     		PDF W3J512M72G-XPBX W3J512M72G-XLBX 1600Mb/s w3j128m72 w3j512m72

    Untitled

    Abstract: No abstract text available
    Text: W3J128M72K-XLBX W3J128M72K-XPBX *ADVANCED 1GB – 128M x 72 DDR3 SDRAM – 1.35V – 375 PBGA Multi-Chip Package FEATURES BENEFITS  DDR3 Data Rate = 800; 1,066; 1,333; 1,600* Mb/s  35%* Space savings vs. FBGA  Packages:  Reduced part count


    Original     		PDF W3J128M72K-XLBX W3J128M72K-XPBX 1600Mb/s

    EDI2AG272129V

    Abstract: GW CSSRM1.PC-MFNQ-5C7E-1-700-R18
    Text: EDI2AG272129V 2x128Kx72, 3.3V Sync/Sync Burst SRAM SO-DIMM ADVANCED* FEATURES • 2x128Kx72 Synchronous, Synchronous Burst The EDI2AG272129VxxD1 is a Synchronous/Synchronous Burst SRAM, 72 position DIMM 144 contacts Module, organized as 2x128Kx72. The Module contains four (4) Synchronous Burst


    Original     		PDF EDI2AG272129V 2x128Kx72, 2x128Kx72 EDI2AG272129VxxD1 2x128Kx72. 14mmx20mm s129V EDI2AG272129V85D1* EDI2AG272129V9D1* EDI2AG272129V10D1 EDI2AG272129V GW CSSRM1.PC-MFNQ-5C7E-1-700-R18

    Untitled

    Abstract: No abstract text available
    Text: EDI2GG418128V 4x128Kx18, 3.3V Synchronous Flow-Through SRAM CARD EDGE DIMM FEATURES • 4x128Kx18 Synchronous The EDI2GG418128VxxD2 is a Synchronous SRAM, 60 position Card Edge; DIMM 120 contacts module, organized as 4x128Kx64. The module contains four (4) Synchronous Burst Ram Devices,


    Original     		PDF EDI2GG418128V 4x128Kx18, 4x128Kx18 EDI2GG418128VxxD2 4x128Kx64. 14mmx20mm EDI2GG418128V95D* EDI2GG418128V10D* 4x128Kx18

    DIMM_200

    Abstract: No abstract text available
    Text: EDI2GG46464V 4x64Kx64, 3.3V Synchronous SRAM CARD EDGE DIMM FEATURES • 4x64Kx64 Synchronous The EDI2GG46464VxxD is a Synchronous SRAM, 60 position Dual Key; Card Edge DIMM 120 contacts Module, organized as 4x64Kx64. The Module contains eight (8) Synchronous Burst


    Original     		PDF EDI2GG46464V 4x64Kx64, 4x64Kx64 EDI2GG46464VxxD 4x64Kx64. 14mmx20mm EDI2GG46464V95D* EDI2GG46464V10D EDI2GG46464V11D EDI2GG46464V12D DIMM_200

    EDI2CG472128V

    Abstract: No abstract text available
    Text: EDI2CG472128V 4x128Kx72, 3.3V Sync/Sync Burst SRAM Dual Key DIMM FEATURES • 4x128Kx72 Synchronous, Synchronous Burst The EDI2CG472128VxxD2 is a Synchronous/Synchronous Burst SRAM, 84 position Dual Key; Double High DIMM 168 contacts Module, organized as 4x128Kx72. The Module contains eight (8)


    Original     		PDF EDI2CG472128V 4x128Kx72, 4x128Kx72 EDI2CG472128VxxD2 4x128Kx72. 14mmx20mm devic168 EDI2CG472128V85D2* EDI2CG472128V10D2* EDI2CG472128V12D2 EDI2CG472128V

    DQ463

    Abstract: "207b spd delay ic"
    Text: SL72A7M128M8M-A75EW 128M X 72 Bits 1GB 200-Pin DDR SDRAM SO-DIMM with ECC (PC2100) FEATURES GENERAL DESCRIPTION • The SimpleTech SL72A7M128M8M-A75EW is a 128M x 72 bits Double Data Rate (DDR) Synchronous Dynamic RAM (SDRAM) Small-Outline Dual In-line Memory Module (SO-DIMM).


    Original     		PDF SL72A7M128M8M-A75EW 200-Pin PC2100) SL72A7M128M8M-A75EW PC2100 DDR266B 133MHz--7 cycles/64ms JEP-106E DQ463 "207b spd delay ic"

    HSD8M64B8A

    Abstract: No abstract text available
    Text: HANBit HSD8M64B8A Synchronous DRAM Module 64Mbyte 8Mx64-Bit , 144pin SO-DIMM, 4Banks, 4K Ref., 3.3V Part No. HSD8M64B8A GENERAL DESCRIPTION The HSD8M64B8A is a 8M x 64 bit Synchronous Dynamic RAM high density memory module. The module consists of eight CMOS 2M x 8 bit with 4banks Synchronous DRAMs in TSOP-II 400mil packages on a 144-pin glass-epoxy substrate.


    Original     		PDF HSD8M64B8A 64Mbyte 8Mx64-Bit) 144pin HSD8M64B8A 400mil 144-pin HSD8M64B8

    GW 94 H

    Abstract: A015 EDI2GG464128V ICC3-400
    Text: White Electronic Designs EDI2GG464128V 4MB SYNCHRONOUS CARD EDGE DIMM FEATURES DESCRIPTION 4x128Kx64 Synchronous The EDI2KG64128VxxD is a Synchronous SRAM, 60 position Card Edge DIMM 120 contacts Module, organized as 4x128Kx64. The Module contains eight


    Original     		PDF EDI2GG464128V 4x128Kx64 EDI2KG64128VxxD 4x128Kx64. 14mmx20mm mem050) GW 94 H A015 EDI2GG464128V ICC3-400

    Untitled

    Abstract: No abstract text available
    Text: IBM13V25649AP IBM13V51649AN IBM13V25649AN IBM13V51649AP 256K/512K x 64 SGRAM SO DIMM Features 144 Pin Graphics JEDEC Standard, 8 Byte Synchro­ nous Small Outline Dual-In-line Memory Module Performance: Speed Grade 7R5 ! 10 ! Units I I Clock Frequency 133 ! 100 ! MHz


    OCR Scan     		PDF IBM13V25649AP IBM13V51649AN IBM13V25649AN IBM13V51649AP 256K/512K s5649AP

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA THMY721661 BEG-80,-10 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY721661BEG is a 16,777,216-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59S6408BFT/BFTL DRAMs and an unbuffer on a printed circuit board.


    OCR Scan     		PDF THMY721661 BEG-80 216-WORD 72-BIT THMY721661BEG TC59S6408BFT/BFTL 72-bit

    Untitled

    Abstract: No abstract text available
    Text: EDI2CG472128V 4 Megabyte Sync/Sync Burst, Dual Key DIMM Advanced 4x128Kx72, 3.3 V Sync/Sync Burst Flow-Through 4x128K x72 Synchronous, S ynchronous Burst The E D I2C G 472128V xxD2 is a S ynchronous/S ynchro­ Flow-Through A rchitecture nous Burst SRAM , 84 position Dual Key; Double High


    OCR Scan     		PDF EDI2CG472128V 4x128Kx72, 4x128K 72128V 4x128Kx72. 700P8511111111111 11111111111111II1111111111111111 111111111111111111111111111111111II111111 050TYP. EDI2CG472128V

    Untitled

    Abstract: No abstract text available
    Text: ^EDI EDI2KG46464V 2 Megabyte Synchronous Card Edge DIMM ELECTRONIC DESIGNS, IN C ADVANCED 4x64Kx64, 3.3V Module Features Synchronous Flow-Through • 4x64Kx64 Synchronous • Flow-Through A rchitecture • C lock Controlled Registered Bank Enables E1\, Module, organized as 4x64Kx64. The M odule contains


    OCR Scan     		PDF EDI2KG46464V 4x64Kx64, 4x64Kx64 4x64Kx64. I2KG46464VxxD

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA THMY641661 BEG-80,-10 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY641661BEG is a 16,777,216-word by 64-bit synchronous dynamic RAM module consisting of 16 TC59S6408BFT/BFTL DRAMs on a printed circuit board.


    OCR Scan     		PDF THMY641661 BEG-80 216-WORD 64-BIT THMY641661BEG TC59S6408BFT/BFTL 64-bit

    4N 26 TFK

    Abstract: No abstract text available
    Text: T O S H IB A TH MY7216E1 BEG-80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY7216E1BEG is a 16,777,216-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59S6408BFT DRAMs and an unbuffer on a printed circuit board.


    OCR Scan     		PDF MY7216E1 BEG-80 216-WORD 72-BIT THMY7216E1BEG TC59S6408BFT 72-bit 4N 26 TFK

    Untitled

    Abstract: No abstract text available
    Text: ^EDI EDI2KG432128V 2 Megabyte Synchronous Card Edge DIMM ELECTRONIC DESIGNS IN C 4x128Kx32, 3.3V Module Features Synchronous Flow-Through 4x128K x32 Synchronous The EDI2KG 432128VxxD is a S ynchronous SRAM, 60 Flow-Through A rchitecture position Card Edge; DIMM 120 contacts Module, orga­


    OCR Scan     		PDF EDI2KG432128V 4x128Kx32, 4x128K 432128VxxD 4x128Kx32.

    Untitled

    Abstract: No abstract text available
    Text: ma EDI2GG43264V 1Megabyte Synchronous Card Edge DIMM ELECTRONIC DESIGNS. INC. 4x64Kx32, 3.3V Module Features Sync/Sync Burst Flow-Through 4x64Kx32 Synchronous The EDI2KG43264VxxD is a Synchronous SRAM, 60 position, Card Edge DIMM 120 contacts Module, orga­


    OCR Scan     		PDF EDI2GG43264V 4x64Kx32, 4x64Kx32 EDI2KG43264VxxD 4x64Kx32. 14mmx20mm EDI2GG43264V

    Untitled

    Abstract: No abstract text available
    Text: EDI2CG472256V 8 Megabyte Sync/Sync Burst, Dual Key DIMM ELECTRONIC DESIGNS. INC. 4x256Kx72, 3.3V Module Features Sync/Sync Burst Flow-Through 4x256Kx72 Synchronous, Synchronous Burst The EDI2CG472256VxxD2 is a Synchronous/Synchro­ nous Burst SRAM, 84 position Dual Key; Double High


    OCR Scan     		PDF EDI2CG472256V 4x256Kx72, 4x256Kx72 EDI2CG472256VxxD2 4x256Kx72. 14mmx20mm EDI2CG472256V