H-14
Abstract: H-17 MT16LD1664A MT32LD3264A MT8LD864A DF27 MT4LC16M4H9
Text: 8, 16, 32 MEG x 64 NONBUFFERED DRAM DIMMs DRAM MODULE MT8LD864A X, MT16LD1664A X, MT32LD3264A X For the latest data sheet, please refer to the Micron Web site: www.micronsemi.com/datasheets/datasheet.html FEATURES PIN ASSIGNMENT Front View 168-Pin DIMM (H-14; 64MB)
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MT8LD864A
MT16LD1664A
MT32LD3264A
168-Pin
128MB)
256MB)
168-pin,
128MB
256MB
096-cycle
H-14
H-17
DF27
MT4LC16M4H9
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PC100-222
Abstract: PC133-333 TSOP54 HYS64V32220GD-7 HYS64V32220GD-8-C2 HYS64V32220GDL-8
Text: 3.3V SDRAM Modules HYS64V32220GD L 256MB PC100/PC133 144 pin SO-DIMM SDRAM Modules Datasheet • 144 Pin Eight Byte Small Outline Dual-In-Line Synchronous DRAM Modules for notebook applications • Two bank 32M x 64 (256 MByte) non-parity module organisation
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HYS64V32220GD
256MB
PC100/PC133
PC133
PC100
PC100-222
PC133-333
TSOP54
HYS64V32220GD-7
HYS64V32220GD-8-C2
HYS64V32220GDL-8
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BA5 marking
Abstract: DQ112-127 BA7 marking HMD4M144D9WG DQ113 BA6 marking BA6137 DQ99
Text: HANBit HMD4M144D9WG 64Mbyte 4Mx144 200-pin ECC Mode 4K Ref. DIMM Design 5V Part No. HMD4M144D9WG GENERAL DESCRIPTION The HMD4M144D9WG is a 4Mbit x 144bit dynamic RAM high-density memory module. The module consists of eight CMOS 4Mx16bit DRAMs in 50-pin TSOP packages and one CMOS 4M x 16bit DRAM in 50pin TSOP package
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HMD4M144D9WG
64Mbyte
4Mx144)
200-pin
HMD4M144D9WG
144bit
4Mx16bit
50-pin
16bit
BA5 marking
DQ112-127
BA7 marking
DQ113
BA6 marking
BA6137
DQ99
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W3DG6417V-D2
Abstract: No abstract text available
Text: White Electronic Designs W3DG6417V-D2 PRELIMINARY* 128MB - 16Mx64, SDRAM UNBUFFERED FEATURES DESCRIPTION PC100 and PC133 compatible The W3DG6417V is a 16Mx64 synchronous DRAM module which consists of four 16Mx16 SDRAM components in TSOP II package and one 2K EEPROM
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W3DG6417V-D2
128MB
16Mx64,
PC100
PC133
W3DG6417V
16Mx64
16Mx16
W3DG6417V-D2
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PDF
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Untitled
Abstract: No abstract text available
Text: HYM64V1605GU-50/-60 HYM64V1645GU-50/-60 HYM72V1605GU-50/-60 HYM72V1645GU-50/-60 3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module 168pin unbuffered DIMM Module with serial presence detect • 168 Pin JE D E C Standard, Unbuffered 8 Byte Dual In-Line Memory Module
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64-Bit
72-Bit
168pin
HYM64V1605GU-50/-60
HYM64V1645GU-50/-60
HYM72V1605GU-50/-60
HYM72V1645GU-50/-60
V1605/45GU-50/-60
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TME 87 0D
Abstract: No abstract text available
Text: SIEMENS 3.3V 8M x 64-Bit EDO-DRAM Module 3.3V 8M x 72-Bit EDO-DRAM Module HYM64V8005GU-50/-60 HYM64V8045GU-50/-60 HYM72V8005GU-50/-60 HYM72V8045GU-50/-60 168pin unbuffered DIMM Module with serial presence detect * 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual In-Line Memory Module
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64-Bit
72-Bit
168pin
HYM64V8005GU-50/-60
HYM64V8045GU-50/-60
HYM72V8005GU-50/-60
HYM72V8045GU-50/-60
DM168-13
TME 87 0D
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Untitled
Abstract: No abstract text available
Text: IBM11N32645B IBM11N32735B IBM11N32645C IBM11N32735C 32M x 64/72 DRAM MODULE Features • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual In-line Memory Module • System Performance Benefits: - Non buffered for increased performance - Reduced noise 35 VSs/V cc P^s
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IBM11N32645B
IBM11N32735B
IBM11N32645C
IBM11N32735C
32Mx64,
32Mx72
104ns
11N32645B
11N32735B
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Untitled
Abstract: No abstract text available
Text: IBM13T2649NC 2M x 64 SDRAM SO DIMM Features • 144 Pin emerging JEDEC Standard, 8 Byte Small Outline Dual-In-Iine Memory Module • 2Mx64 Synchronous DRAM SO DIMM • Performance: 10 CAS Latency § Units 3 jfcK I Clock Frequency I 100 j MHz jtcK j Clock Cycle
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IBM13T2649NC
2Mx64
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Untitled
Abstract: No abstract text available
Text: IBM11M32735B IBM11M32735C 32M x 72 DRAM Module Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • System Performance Benefits: - Buffered inputs except RAS, Data - Reduced noise (32 VSs/V cc P^s) - 4 Byte Interleave enabled - Buffered PDs
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IBM11M32735B
IBM11M32735C
32Mx72
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Untitled
Abstract: No abstract text available
Text: I = = = = ¥ = = = ’ = IB M 1 1 N 2 6 4 5 H IB M 1 1 N 2 7 3 5 H 2M x 64/72 DRAM MODULE Features • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual In-line Memory Module • 2Mx64, 2Mx72 Extended Data Out Page Mode DIMMs applications • System Performance Benefits:
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2Mx64,
2Mx72
104ns
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Untitled
Abstract: No abstract text available
Text: IBM11N16735B IBM11N16645B IBM11N16735C IBM11N16645C 16M x 64/72 DRAM MODULE Features • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual In-line Memory Module • 16Mx64.16Mx72 Extended Data Out Page Mode DÎMMs • Performance: -60 Wc [RAS Access Time tCAC
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IBM11N16735B
IBM11N16645B
IBM11N16735C
IBM11N16645C
16Mx64
16Mx72
104ns
75H1640
SA14-4626-02
DD05225
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Untitled
Abstract: No abstract text available
Text: _ January 1997 Revision 2.0 _ <p FUJITSU D A TA SH EET SDC1UV6412 A -(67/84/100/125)T-S 8MByte (1M x 64) CMOS Synchronous DRAM Module General Description The SDC1UV6412(A)-(67/84/100/125)T-S is a high performance, 8-megabtye synchronous, dynamic RAM module organized as
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SDC1UV6412
168-pin,
MB811171622A-
1Mx16
V6412
168-pin
SDC1UV6412)
SDC1UV6412A)
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PDF
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Untitled
Abstract: No abstract text available
Text: HB56HW164EJN Series 1,048,576-word x 64-bit High Density Dynamic RAM Module HITACHI ADE-203-696B Z Rev.2.0 May. 30, 1997 Description The HB56HW164EJN belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been developed as an optimized main memory solution for 4 and 8 Byte processor applications. The
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HB56HW164EJN
576-word
64-bit
ADE-203-696B
HB56HW
164EJN
16-Mbit
HM51W18165)
24C02)
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8735C
Abstract: No abstract text available
Text: IBM11N8645B IBM11N8735B IBM11N8645C IBM11N8735C 8M x 64/72 DRAM MODULE Features • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual In-line Memory Module • System Performance Benefits: -Non buffered for increased performance • 8Mx64, 8Mx72 Dual Bank Extended Data Out
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IBM11N8645B
IBM11N8735B
IBM11N8645C
IBM11N8735C
8Mx64,
8Mx72
IBM11N8735C
8735C
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1M x 16 16-MBIT DYNAMIC RAM WITH EDO PAGE MODE
Abstract: No abstract text available
Text: HB56HW164DB Series, HB56HW165DB Series 1,048,576-word x 64-bit High Density Dynamic RAM Module HITACHI ADE-203-699B Z Rev.2.0 Jun. 5, 1997 Description The HB56HW164DB is a 1M x 64 dynamic RAM Small Outline Dual In-line Memory Module (S.O.DIMM), mounted 4 pieces of 16-Mbit DRAM (HM51W16165) sealed in TSOP package and 1 pieces
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HB56HW164DB
HB56HW165DB
576-word
64-bit
ADE-203-699B
16-Mbit
HM51W16165)
24C02)
1M x 16 16-MBIT DYNAMIC RAM WITH EDO PAGE MODE
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M8730
Abstract: No abstract text available
Text: IBM11 M8730C IBM11 M8730CB 8M x 72 DRAM MODULE Features System Performance Benefits: • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module -Buffered inputs except RAS, Data -Reduced noise (32 Vss/Vcc pins) • 8Mx72 Dual Bank Fast Page Mode DIMM
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IBM11
M8730C
M8730CB
8Mx72
110ns
130ns
M8730
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tcd 142
Abstract: No abstract text available
Text: HB56UW272EJN-6B/7B 2,097,152-word x 72-bit High Density Dynamic RAM Module 168-pin JEDEC Standard Outline Unbufferd 8 byte DIMM HITACHI ADE-203-586A Z Preliminary - Rev. 0.1 May. 23, 1996 Description The HB56UW272EJN belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been
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HB56UW272EJN-6B/7B
152-word
72-bit
168-pin
ADE-203-586A
HB56UW272EJN
16-Mbit
HM51W17805BJ)
24C02)
tcd 142
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Untitled
Abstract: No abstract text available
Text: IBM11N8645B IBM11N8735B IBM11N8645C IBM11N8735C 8M x 64/72 DRAM MODULE Features • System Performance Benefits: • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual In-line Memory Module -Non buffered for increased performance -Reduced noise 35 V s s ^ c c P'ns
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IBM11N8645B
IBM11N8735B
IBM11N8645C
IBM11N8735C
8Mx64,
8Mx72
SA14-4624-04
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PDF
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Untitled
Abstract: No abstract text available
Text: IBM11 M8735C IBM11 M8735CB 8M x 72 DRAM MODULE Features System Performance Benefits: • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • 8Mx72 Dual Bank Extended Data Out Mode DIMM • Performance: : -50 : -60 : -70 RAS Access Tim e 50ns 60ns
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IBM11
M8735C
M8735CB
8Mx72
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Untitled
Abstract: No abstract text available
Text: cP IITSU July 1998 Revision 1.0 data sheet PDC8R V7284J- 102/103 T-S 64MByte (8M x 72) CMOS, PC/100 Synchronous DRAM Module - ECC (Registered) General Description The PDC8RV7284J-(102/103)T-S is a high performance, 64-megabyte synchronous, dynamic RAM module organized as 8M
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V7284J-
64MByte
PC/100
PDC8RV7284J-
64-megabyte
168-pin,
F64842C-
64MByte
10168-pin
200-pin
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8035 10 pin
Abstract: No abstract text available
Text: IBM11 N1645L IBM11 N1735Q 1M x 64/72 DRAM Module Features • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual In-line Memory Module • Optimized for byte-write, non-parity, or ECC applications. • 1 Mx64, 1 Mx72 Extended Data Out Page Mode DIMMs • System Performance Benefits:
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IBM11
N1645L
N1735Q
104ns
SA14-4630-05
8035 10 pin
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PDF
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Untitled
Abstract: No abstract text available
Text: IBM11T4645MP IBM11T8645MP 4M /8M x 64 144 PIN SO DIMM Features • Au contacts • 144 Pin JEDEC Standard, 8 Byte Small Outline Dual In-line Memory Module with 8 Byte busses • Optimized for byte-write non-parity applications • 4M/8Mx64 Extended Data Out SO DIMM
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IBM11T4645MP
IBM11T8645MP
4M/8Mx64
256ms
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PDF
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Untitled
Abstract: No abstract text available
Text: cP IITSU May 1998 Revision 3.0 data sheet PDC8R V7284- 103/10 T-S 64MByte (8M x 72) CMOS, PC/100 Synchronous DRAM Module - ECC (Registered) General Description The PDC 8RV7284-(103/10)T-Sis a high performance, 64-megabyte synchronous, dynamic RAM module organized as8M words
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V7284-
64MByte
PC/100
8RV7284-
64-megabyte
168-pin,
F64842B-
64MByte
72-pin
144-pin
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PDF
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Untitled
Abstract: No abstract text available
Text: IB M 1 1 M 4 7 3 5 C IB M 1 1 M 4 7 3 5 C B 4M x 72 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • Optimized for ECC applications • System Performance Benefits: - • 4Mx72 Extended Data Out Page Mode DIMM • Performance:
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4Mx72
124ns
104ns
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