A17a
Abstract: A21A A18A MCP market MB84VY6A4A1 MB84VZ128A 92PIN CE-2Ra internal block diagram of mobile phone A22A
Text: New Products MB84VY6A4A1 2-Bus Type PS-MCP Mounted with 6 Memory Chips MB84VY6A4A1 The world first PS-MCP ＿ Package ＿ Stacked M CP with a 2-bus configuration, ＿ mounted with 4 memory chips for a cellular phone application block and 2 memory chips for a baseband block. MB84VY6A4A1 is configured with 328M bits
|
Original
|
PDF
|
MB84VY6A4A1
MB84VY6A4A1
40REF
80REF
A17a
A21A
A18A
MCP market
MB84VZ128A
92PIN
CE-2Ra
internal block diagram of mobile phone
A22A
|
octal tri state buffer ic
Abstract: CXK77B1840AGB CXK77B3640AGB SA10 SA11 SA12 SA14 2N218 369 42 sony
Text: SONY CXK77B3640AGB / CXK77B1840AGB 4Mb Late Write HSTL High Speed Synchronous SRAMs 128K x 36 or 256K x 18 Organization 37/38/4/45 Preliminary Description The CXK77B3640A (organized as 131,072 words by 36 bits) and the CXK77B1840A (organized as 262,144 words by 18 bits)
|
Original
|
PDF
|
CXK77B3640AGB
CXK77B1840AGB
CXK77B3640A
CXK77B1840A
CXK77B3640A
octal tri state buffer ic
CXK77B1840AGB
SA10
SA11
SA12
SA14
2N218
369 42 sony
|
NS064N
Abstract: S29NS128N S29NS256N VDC048 S29NS256
Text: S29NSxxxN MirrorBitTM Flash Family S29NS256N, S29NS128N, S29NS064N 256/128/64 Megabit 16/8/4M x 16-bit , CMOS 1.8 Volt-only Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory ADVANCE INFORMATION Distinctive Characteristics Single 1.8 volt read, program and erase (1.70
|
Original
|
PDF
|
S29NSxxxN
S29NS256N,
S29NS128N,
S29NS064N
16/8/4M
16-bit)
32-Word
S29NS256/128/64N
NS064N
S29NS128N
S29NS256N
VDC048
S29NS256
|
Untitled
Abstract: No abstract text available
Text: S29NS-N MirrorBit Flash Family S29NS256N, S29NS128N, S29NS064N 256/128/64 Megabit 16/8/4M x 16-bit , CMOS 1.8 Volt-only Simultaneous Read/Write, Multiplexed, Burst Mode Flash Memory Data Sheet (Advance Information) Distinctive Characteristics Single 1.8V read, program and erase (1.70V to 1.95V)
|
Original
|
PDF
|
S29NS-N
S29NS256N,
S29NS128N,
S29NS064N
16/8/4M
16-bit)
|
TAA 611 T12
Abstract: x48 chipset IDT72T6360 IDT72T6480 D25N3
Text: 2.5V SEQUENTIAL FLOW-CONTROL DEVICE 48 BIT WIDE CONFIGURATION For use with 128Mb to 256Mb DDR SDRAM FEATURES • IDT Standard mode or FWFT mode of operation • Empty and full flags for monitoring memory status • Programmable Almost-Empty and Almost-Full flags, each flag
|
Original
|
PDF
|
128Mb
256Mb
BB324)
72T6480
drw45
TAA 611 T12
x48 chipset
IDT72T6360
IDT72T6480
D25N3
|
octal tri state buffer ic
Abstract: sony CXK77B3640GB SA10 SA11 SA12 SA14 SA16
Text: SONY CXK77B3640GB 4A/4/45A/45 4Mb Late Write HSTL High Speed Synchronous SRAM 128K x 36 Organization Description The CXK77B3640 is a high speed BiCMOS synchronous static RAM with common I/O pins, organized as 131,072-words by 36-bits. This synchronous SRAM integrates input registers, high speed RAM, output registers/latches, and a one-deep write
|
Original
|
PDF
|
CXK77B3640GB
A/4/45A/45
CXK77B3640
072-words
36-bits.
page-13
page-21)
128Kx36,
octal tri state buffer ic
sony
CXK77B3640GB
SA10
SA11
SA12
SA14
SA16
|
octal tri state buffer ic
Abstract: sony CXK77B1841AGB CXK77B3641AGB SA10 SA11 SA12 SA14
Text: SONY CXK77B3641AGB / CXK77B1841AGB 4Mb Late Write LVTTL High Speed Synchronous SRAMs 128K x 36 or 256K x 18 Organization 33/37/5/6 Preliminary Description The CXK77B3641A (organized as 131,072 words by 36 bits) and the CXK77B1841A (organized as 262,144 words by 18 bits)
|
Original
|
PDF
|
CXK77B3641AGB
CXK77B1841AGB
CXK77B3641A
CXK77B1841A
octal tri state buffer ic
sony
CXK77B1841AGB
SA10
SA11
SA12
SA14
|
LDM-1A
Abstract: No abstract text available
Text: PRELIMINARY INFORMATION L9D382G32BG2 L9D3162G32BG2 8-16 Gb, DDR3, 128M - 256M x 32 Dual Channel Integrated Module 8-16 Gb, DDR3, 128M - 256M x 64 Single Channel Integrated Module Benefits %RDUGDUHDVDYLQJVZLWKVXUIDFH Z ZL PRXQWIULHQGO\SLWFK PP
|
Original
|
PDF
|
L9D382G32BG2
L9D3162G32BG2
DDR3-133
DDR3-1333
LDS-L9D3xxxG32BG2
LDS-L9D3xxG32BG2
LDM-1A
|
L9D3256M32DBG2
Abstract: No abstract text available
Text: PRELIMINARY INFORMATION L9D3256M32DBG2 L9D3512M32DBG2 16-32 Gb, DDR3, 256-512M x 32 Dual Channel Memory Module Benefits FEATURES DDR3 Integrated Module [iMOD]: x9DD 9DD4 999 x9FHQWHUWHUPLQDWHGSXVKSXOO ,2 x3DFNDJH PP[PP[PP
|
Original
|
PDF
|
L9D3256M32DBG2
L9D3512M32DBG2
256-512M
DDR3-1866
L9D3256M32DBG2x125
DDR3-1600
L9D3256M32DBG2x15
DDR3-1333
L9D3512M32DBG2x125
L9D3256M32DBG2
|
Untitled
Abstract: No abstract text available
Text: 2.5V SEQUENTIAL FLOW-CONTROL DEVICE 36 BIT WIDE CONFIGURATION For use with 128Mb to 256Mb DDR SDRAM FEATURES • IDT Standard mode or FWFT mode of operation • Empty and full flags for monitoring memory status • Programmable Almost-Empty and Almost-Full flags, each flag
|
Original
|
PDF
|
128Mb
256Mb
BB324)
72T6360
|
Untitled
Abstract: No abstract text available
Text: 2.5V SEQUENTIAL FLOW-CONTROL DEVICE 48 BIT WIDE CONFIGURATION For use with 128Mb to 256Mb DDR SDRAM • IDT Standard mode or FWFT mode of operation • Empty and full flags for monitoring memory status • Programmable Almost-Empty and Almost-Full flags, each flag
|
Original
|
PDF
|
128Mb
256Mb
BB324)
72T6480
drw45
|
TAA 611 T12
Abstract: 72T6480 BA1-B11 d25n3 BA0-C11 k4h561638f A11-C10 q35t Q35T1 A7D9
Text: 2.5V SEQUENTIAL FLOW-CONTROL DEVICE 48 BIT WIDE CONFIGURATION For use with 128Mb to 256Mb DDR SDRAM • IDT Standard mode or FWFT mode of operation • Empty and full flags for monitoring memory status • Programmable Almost-Empty and Almost-Full flags, each flag
|
Original
|
PDF
|
128Mb
256Mb
drw44
BB324)
72T6480
drw45
TAA 611 T12
72T6480
BA1-B11
d25n3
BA0-C11
k4h561638f
A11-C10
q35t
Q35T1
A7D9
|
C2004A
Abstract: KM48C2104A C2104A C2104 km48v2104a
Text: KM48C2004A, KM48C2104A KM48V2004A, KM48V2104A CMOS DRAM 2M x 8 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 2,097,152 x 8 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply
|
OCR Scan
|
PDF
|
KM48C2004A,
KM48C2104A
KM48V2004A,
KM48V2104A
b4142
C2004A
KM48C2104A
C2104A
C2104
km48v2104a
|
Untitled
Abstract: No abstract text available
Text: SONY CXK77B3640GB 4A/4/45A/45 4Mb Late Write HSTL High Speed Synchronous SRAM 128K x 36 Organization Description T he C X K 77B 3640 is a high speed BiCM O S synchronous static R A M w ith com m on I/O pins, organized as 131,072-w ords by 36-bits. This synchronous SR A M integrates input registers, high speed R A M , output registers/latches, and a one-deep write
|
OCR Scan
|
PDF
|
CXK77B3640GB
A/4/45A/45
072-w
36-bits.
925i2
075i2
page-13
page-21)
128Kx36,
|
|
|
CXK77B3640GB
Abstract: SA12 SA13 SA14 SA15 SA16
Text: SONY CXK77B3640GB 4A/4/45A/45 4Mb Late Write HSTL High Speed Synchronous SRAM 128K x 36 Organization Description T he C X K 77B 3640 is a high speed BiCM O S synchronous static R A M w ith com m on I/O pins, organized as 131,072-w ords by 36-bits. This synchronous SRA M integrates input registers, high speed R A M , output registers/latches, and a one-deep write
|
OCR Scan
|
PDF
|
CXK77B3640GB
A/4/45A/45
CXK77B3640
072-words
36-bits.
075i2
page-13
page-21)
128Kx36,
SA12
SA13
SA14
SA15
SA16
|
Untitled
Abstract: No abstract text available
Text: KMM5328000CK/CKG KMM53281OOCK/CKG DRAM MODULE KMM5328000CK/CKG & KMM53281 OOCK/CKG with Fast Page Mode 8M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM53280 1 00CK is a 8Mx32bits RAM high density Dynamic , Part Identification
|
OCR Scan
|
PDF
|
KMM53280
8Mx32bits
KMM5328000CK/CKG
KMM53281OOCK/CKG
KMM5328000CK/CKG
KMM53281
5328000CK
cycles/64ms
KMM5328000CKG
|
Untitled
Abstract: No abstract text available
Text: SONY CXK77B3640GB 4A/4/45A/45 4Mb Late Write HSTL High Speed Synchronous SRAM 128K x 36 Organization Description The CXK77B3640 is a high speed BiCMOS synchronous static RAM with common I/O pins, organized as 131,072-words by 36-bits. This synchronous SRAM integrates input registers, high speed RAM, output registers/latches, and a one-deep write
|
OCR Scan
|
PDF
|
CXK77B3640GB
A/4/45A/45
CXK77B3640
072-words
36-bits.
page-13
page-21)
128Kx36,
|
Untitled
Abstract: No abstract text available
Text: STI641004G1-60G 144-PIN SO-DIMMS 1M X 64 Bits DRAM SO-DIMM Memory Module FEATURES • GENERAL DESCRIPTION Performance range: ^RAC ^CAC *RC ^HPC 60ns 17ns 104ns 25ns The Simple Technology STI641004G1-60G is a 1M x 64 bits Dynamic RAM high density memory module. The Simple
|
OCR Scan
|
PDF
|
STI641004G1-60G
144-PIN
STI641004G1-60G
44-pin
400-mil
S50IC
|
CXK77B3640GB
Abstract: SA12 SA13 SA14 SA15 SA16
Text: SONY CXK77B3640GB 4A/4/45A/45 4Mb Late Write HSTL High Speed Synchronous SRAM 128K x 36 Organization Description The CXK77B3640 is a high speed BiCMOS synchronous static RAM with common I/O pins, organized as 131,072-words by 36-bits. This synchronous SRAM integrates input registers, high speed RAM, output registers/latches, and a one-deep write
|
OCR Scan
|
PDF
|
CXK77B3640GB
A/4/45A/45
CXK77B3640
072-words
36-bits.
075i2
page-13
page-21)
128Kx36,
SA12
SA13
SA14
SA15
SA16
|
CXK77B3641GB
Abstract: SA12 SA13 SA14 SA15 SA16
Text: SONY CXK77B3641GB 45/5/6 4Mb Late Write LVTTL High Speed Synchronous SRAM 128K x 36 Organization Description The CXK77B3641 is a high speed BiCMOS synchronous static RAM with common I/O pins, organized as 131,072-words by 36-bits. This synchronous SRAM integrates input registers, high speed RAM , output registers/latches, and a one-deep write
|
OCR Scan
|
PDF
|
CXK77B3641GB
CXK77B3641
072-words
36-bits.
page-20)
page-19)
page-10
Page-11)
128Kx36,
CXK77B3641GB
SA12
SA13
SA14
SA15
SA16
|
Untitled
Abstract: No abstract text available
Text: 4Mb Late Write LVTTL High Speed Synchronous SRAM 256K x 18 Organization Description The CXK77B1841 is a high speed BiCMOS synchronous static RAM with common I/O pins, organized as 262,144-words by 18-bits. This synchronous SRAM integrates input registers, high speed RAM, output registers/latches, and a one-deep write
|
OCR Scan
|
PDF
|
CXK77B1841
144-words
18-bits.
page-19)
page-10
page-11)
|
Untitled
Abstract: No abstract text available
Text: SONY CXK77B3641GB 45/5/6 4Mb Late Write LVTTL High Speed Synchronous SRAM 128K x 36 Organization Description The CXK77B3641 is a high speed BiCMOS synchronous static RAM with common I/O pins, organized as 131,072-words by 36-bits. This synchronous SRAM integrates input registers, high speed RAM, output registers/latches, and a one-deep write
|
OCR Scan
|
PDF
|
CXK77B3641GB
CXK77B3641
072-words
36-bits.
page-20)
page-19)
page-10
Page-11)
128Kx36,
|
m78004
Abstract: m78004p dq2ac "Dual-Port RAM" M79018DX-15 M79004PX-20A dual port ram
Text: a t. t & t ilELEC . DESCRIPTION The M79004PX-20A & -24A are 512 words by 9 bits, clocked, static Dual Port Random Access Memory DPRAM devices with 200 ns and 240 ns access times, respectively. They can be viewed as a shared memory in that any cell can be accessed from either of two ports. Each port is totally independent from the other. All address, data, and read/write
|
OCR Scan
|
PDF
|
M79004PX-20A
40-Pin
0G5002b
T-46-23-12
M78004PX-20A
M78004PX-24A
M79004PX-20A
M79004PX-24A
M79018DX-15
m78004
m78004p
dq2ac
"Dual-Port RAM"
M79018DX-15
dual port ram
|
M78004PX-20A
Abstract: M78004PX20A "Dual-Port RAM" M79018DX-15 UL A8A
Text: The M78004PX-20A & -24A are 512 words by 8 bits, clocked, static Dual Port Random Access Memory DPRAM devices with 200 ns and 240 ns access times, respectively. They can be viewed as a shared memory in that any cell can be accessed from either of two ports. Each port is totally independent from the other. All address, data, and read/write
|
OCR Scan
|
PDF
|
DODD44b
T-46-23-12
M78004PX-20A
40-pin-
available4PX-20A
M78004PX-20A
M78004PX-24A
M79004PX-20A
M79004PX-24A
M79018DX-15
M78004PX20A
"Dual-Port RAM"
M79018DX-15
UL A8A
|
