Untitled
Abstract: No abstract text available
Text: iPEM 2.4Gb SDRAM-DDR AS4DDR32M72PBG1 32Mx72 DDR SDRAM iNTEGRATED Plastic Encapsulated Microcircuit FEATURES BENEFITS DDR SDRAM Data Rate = 200, 250, 266, 333Mbps Package: • 208 Plastic Ball Grid Array PBGA , 16 x 23mm-1.0mm pitch 2.5V ±0.2V core power supply
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AS4DDR32M72PBG1
32Mx72
333Mbps
23mm-1
208-PBGA
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Untitled
Abstract: No abstract text available
Text: iPEM 2.4 Gb SDRAM-DDR2 AS4DDR232M72PBG 32Mx72 DDR2 SDRAM iNTEGRATED Plastic Encapsulated Microcircuit FEATURES BENEFITS DDR2 Data rate = 667, 533, 400 Available in Industrial, Enhanced and Military Temp Package: • 255 Plastic Ball Grid Array PBGA , 25 x 32mm
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AS4DDR232M72PBG
32Mx72
AS4DDR232M72PBG
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ACT-D16M96S
Abstract: BSA1 BS-B1
Text: Standard Products ACT-D16M96S High Speed 16MegaBit x 96 3.3V Synchronous DRAM Multichip Module May 29, 2007 FEATURES ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ Six 6 low power 4M x 16 x 4 banks Synchronous Dynamic Random Access Memory chips in one MCM
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ACT-D16M96S
16MegaBit
50-MHz
192-cycle
SCD3370
BSA1
BS-B1
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Untitled
Abstract: No abstract text available
Text: PcRam TS16MLE72V6W Transcend Information Inc. Description The TS16MLE72V6W is a 16M bit x 72 Dynamic RAM high density memory module. The TS16MLE72V6W consists of 18pcs CMOS 8Mx8 bit DRAMs and 2pcs 16bits driver mounted on a 168-pin printed circuit board. The TS16MLE72V6W is a Dual In-Line Memory
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TS16MLE72V6W
TS16MLE72V6W
18pcs
16bits
168-pin
216-word
72-bit
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v801
Abstract: tc5165165
Text: T O SH IB A THM72V8015ATG-4,-5 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,6O8-WORD BY 72-BIT DYNAMIC RAM MODULE DESCRIPTION The THM72V8015ATG is a 8,388,608-word by 72-bit dynamic RAM module consisting of nine TC5165805AFT DRAMs on a printed circuit board. This module is optimized for applications which
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THM72V8015ATG-4
72-BIT
THM72V8015ATG
608-word
TC5165805AFT
v801
tc5165165
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Untitled
Abstract: No abstract text available
Text: STI721005D1 -xxVG 168-PIN DIMMS 1M X 72 Bit DRAM DIMM with FPM and ECC Optimized FEATURES • GENERAL DESCRIPTION Performance range: *RAC ^CAC *RC *PC STI.-60VG 60ns 20ns 110ns 40ns STI.-70VG 70ns 25ns 130ns 45ns The Simple Technology STI721005D1-xxVG is a 1M x 72 bit
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STI721005D1
168-PIN
-60VG
-70VG
110ns
130ns
STI721005D1-xxVG
44-pin
20-pin
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Untitled
Abstract: No abstract text available
Text: 168-PIN DIMMS STI7216107D1-60VG 16M X 72 Bit DRAM DIMM with EDO and ECC Optimized FEATURES GENERAL DESCRIPTION • The Simple Technology STI7216107D1-60VG is an 16M x 72 bit Dynamic RAM high density memory module. The module consists of eighteen 16M x 4 bit DRAMs in 400-mil 34-pin
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STI7216107D1-60VG
168-PIN
110ns
STI7216107D1-60VG
400-mil
34-pin
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KM44V16100AK
Abstract: TIL 143 KM44V16000AK
Text: KMM372V1600AK/AS KMM372V1680AK/AS DRAM MODULE KMM372V1600AK/AS & KMM372V1680AK/AS Fast Page Mode 16Mx72 DRAM DIMM with ECC based on 16Mx4, 4K & 8K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372V160 8 0A is a 16M bit x 72 • Part Identification
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KMM372V1600A
KMM372V1680A
KMM372V1600AK/AS
KMM372V1680AK/AS
16Mx72
16Mx4,
KMM372V160
16Mx4bit
400mil
KM44V16100AK
TIL 143
KM44V16000AK
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smd JSs 13
Abstract: smd JSs smd JSs 99 VT244A smd JSs 75 DQ2Q-DQ23 3E2 material specification
Text: SIEM EN S 16M x 72-Bit Dynamic RAM EDO- Module E C C - Module HYM 72V1605GS-50/-60 HYM 72V1615GS-50/-60 168pin buffered DIMM Module Preliminary Inform ation • 168 Pin JEDEC Standard, Buffered 8 Byte Dual In-Line M em ory Module • 1 bank 16 M x 72 organisation
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72-Bit
72V1605GS-50/-60
72V1615GS-50/-60
168pin
S235b05
023SbDS
fl235b05
smd JSs 13
smd JSs
smd JSs 99
VT244A
smd JSs 75
DQ2Q-DQ23
3E2 material specification
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSC23 T/P 1721 C -X X B S 2 0 1,048,576-Word x 72-Bit DRAM MODULE : FAST PAGE MODE TYPE DESCRIPTION The OKI MSC23T/D1721C-xxBS20 is a fully decoded 1,048,576-word x 72-bit CMOS Dynamic Random Access M emory M odule com posed of sixteen 4-Mb DRAMs 1M x 4 an d four 2-Mb
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MSC23T1721C-XXBS20
MSC23P1721C-XXBS20
576-Word
72-Bit
MSC23T/D1721C-xxBS20
168-pin
72-bit
MSC23T1721C-xxBS20
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HBT 01 - 01G
Abstract: DG20
Text: • O K I Semiconductor MSC23T/PV2720A-xxBS9 2,097,152-W ord x 72-B it DRAM MODULE : FAST PAGE MODE TYPE DESCRIPTION The OKI MSC23T/DV2720A-xxBS9 is a fully decoded 2,097,152-word x 72-bit CMOS Dynamic Random Access M emory M odule com posed of nine 16-Mb DRAMs 2M x 8 in TSOP or SO]
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MSC23T/PV2720A-XXBS9
152-Word
72-Bit
MSC23T/DV2720A-xxBS9
16-Mb
168-pin
72-bit
HBT 01 - 01G
DG20
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Untitled
Abstract: No abstract text available
Text: SIEM ENS 16Mx 4-Bit Dynamic RAM 4k & 8k Refresh HYB 3164400J/T -50/-60 HYB 3165400J/T -50/-60 Preliminary Information • 16 777 216 words by 4-bit organization • 0 to 70 'C operating temperature • Fast access and cycle time RAS access time: 50 ns (-50 version)
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3164400J/T
3165400J/T
3164400J/T-50)
3164400J/T-60)
3165400J/T-50)
3165400J/T-60)
0235bD5
400J/T-50/-60
235b05
0Q71b5b
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Untitled
Abstract: No abstract text available
Text: 9S jo i. aßEd •JUSLUnOOp SII4 JO PU8 8 L|1 JE SUOISIAOjd 014 0} psfqns J8 L|pnj SI 8sn 'P8AJ8 S8J s;l|Bu UV 'uoijBJodjoQ |/\|g| 003 001- L& IZY p s s w s y 1-0-2898H17S 6Z I- 2LV 6Z 8 Z LUJUJLUJJJUJwUJUJUJUJJ U UUJiJLIJiiJLUJJJJJJJLJJJJJJJJJLÜJJJJJJJU^
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1-0-2898H17S
BUJ91X9in
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Untitled
Abstract: No abstract text available
Text: SIEMENS 256 K x 16-Bit Dynamic RAM HYB 514171BJ-60/-70 Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh HYB 514171BJL-60/-70 Advanced Inform ation 262 144 w ords by 16-bit organization 0 to 70 °C operating temperature Fast access and cycle time Low Power dissipation
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16-Bit
514171BJ-60/-70
16-Bit
514171BJL-60/-70
23SbOS
00713S?
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Untitled
Abstract: No abstract text available
Text: •HY U ND A I HYM572A414A F-Series Unbuffered 4M x 72-bit CMOS DRAM MODULE _ with EXTENDED DATA OUT DESCRIPTION T ie HYM572A414A is a 4M x 72-bit EDO mode CMOS DRAM module consisting of eighteen HY5117804B in 28/28 SOJ or TSOP-II and one 2048 bit EEPROM on a 168 pin glass-epoxy printed circuit board. 0.1nF and 0.01 ^F
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HYM572A414A
72-bit
HY5117804B
HYM572A414AFG/ATFG/ASLFG/ASLTFG
-0004gOQ
4b750flfl
D005fl51
1EC07-10-JAN96
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Untitled
Abstract: No abstract text available
Text: IBM11M32730B IBM11M32730C 32M x 72 DRAM MODULE Features • 32Mx72 Dual Bank Fast Page Mode DIMM System Performance Benefits: -Buffered inputs (except RAS, Data) -Reduced noise (32 Vss/Vcc Pir|s) -4 Byte Interleave enabled -Buffered PDs • Performance:
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IBM11M32730B
IBM11M32730C
32Mx72
110ns
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Untitled
Abstract: No abstract text available
Text: IBM11M2730H 2M x 72 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module Optimized for ECC applications System Performance Benefits: • 2Mx72 Fast Page Mode DIMM - Buffered inputs except RAS, Data - Reduced noise (32 Vss/Vcc Pins)
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IBM11M2730H
2Mx72
110ns
130ns
GGG24flE
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Untitled
Abstract: No abstract text available
Text: SIEMENS 1M X 72-Bit Dynamic RAM Module ECC - Module HYM 721000GS-60/-70 Prelim inary Inform ation • 1 048 576 w ords by 72-bit ECC - mode organization • All inputs, outputs and clock fully TTL compatible • Fast access and cycle time 60 ns access time
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72-Bit
721000GS-60/-70
74ABT244
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Untitled
Abstract: No abstract text available
Text: intei 28F016SV 16-MBIT 1 MBIT x 16, 2 MBIT x 8 FlashFileTM MEMORY Sm artVoltage Technology — User-Selectable 3.3V or 5V V cc -U s e r-S e le c ta b le 5V or 12V Vpp 65 ns Access Time 1 Million Erase Cycles per Block 30.8 M B /sec Burst W rite Transfer Rate
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28F016SV
16-MBIT
28F016SA,
28F008SA
28F008SA
56-Lead
4fl2bl75
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Untitled
Abstract: No abstract text available
Text: IBM13Q8734HCA 8M X 72 Registered SDRAM Module Features • 200-P in JE D E C Standard, R egistered 8-B yte Dual In-line M em ory M odule • A utom atic and controlled P recharge C om m ands • Program m able O peration: • 8M x 72 S ynchronous DRAM DIMM
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IBM13Q8734HCA
200-P
IBM13Q8734H
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Untitled
Abstract: No abstract text available
Text: IB M 1 1 M 1 6 7 3 5 B IB M 1 1 M 1 6 7 3 5 C 16M x 72 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • Optimized for ECC applications • 16Mx72 Extended Data Out EDO Mode DIMMs • System Performance Benefits: - Buffered inputs (except RAS, Data)
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16Mx72
104ns
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bi 72
Abstract: BI 344
Text: PANASONIC INDL/ELEK -CIO 72 69 328 52 PANASONIC dËJ 1^33*52 □DQ717M 5 1 72C 0 7 1 7 4 I N D L * ELECTRONIC LS TTL DN74LSS>U—X D DN74LS249/DN74LS249S - |- fr—* I I *-*J DN 74LS249/ DN 74LS249S B C D -to -7 -segment D ecorders/ D r iv e r s (with Open C ollector Outputs
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b132fiS2
DD07v174
DN74LS
DN74LS249/DN74LS249S
DN74LS248/SIÃ
bi 72
BI 344
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sm 0038 tsop
Abstract: LV244A CDD assembly smd 3dm
Text: S IE M E N S 8M x 72-Bit Dynamic RAM EDO-Module ECC - Module HYM 72V8025GS-50/-60 HYM 72V8035GS-50/-60 168 pin buffered DIMM Module Prelim inary Information • 168 Pin JEDEC Standard, Buffered 8 Byte Dual In-Line M em ory Module • 2 bank 8 M x 72 organisation
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72-Bit
72V8025GS-50/-60
72V8035GS-50/-60
72V8025/35GS-50/-60
72-ECC
L-DlM-168-18
91x157
sm 0038 tsop
LV244A
CDD assembly
smd 3dm
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSC23T/P1720C-XXBS18 1,048,576-Word x 72-Bit DRAM MODULE : FAST PAGE MODE TYPE DESCRIPTION T he O K I M SC23T/D 1720C-xxBS18 is a fu lly decoded 1,048,576-w o rd x 72-bit C M O S D yn am ic R an d o m A ccess M e m o ry M o d u le com posed o f eighteen 4-Mb D R A M s 1 M x 4 in T S O P o r S O J
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MSC23T/P1720C-XXBS18
576-Word
72-Bit
MSC23T/D1720C-xxBS18
168-pin
72-bit
MSC23T1720C-xxBS18
MSC23D1720C-xxBS18
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