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    DRAM Search Results

    DRAM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMS4030JL Rochester Electronics LLC TMS4030 - DRAM, 4KX1, 300ns, MOS, CDIP22 Visit Rochester Electronics LLC Buy
    4164-15FGS/BZA Rochester Electronics LLC 4164 - DRAM, 64K X 1, 3-STATE OUTPUTS, 150 NS ACCESS TIME - Dual marked (8201006ZA) Visit Rochester Electronics LLC Buy
    4164-12JDS/BEA Rochester Electronics LLC 4164 - DRAM, 64K X 1, 3-STATE OUTPUTS, 120 NS ACCESS TIME - Dual marked (8201008EA) Visit Rochester Electronics LLC Buy
    4164-15JDS/BEA Rochester Electronics LLC 4164 - DRAM, 64K X 1, 3-STATE OUTPUTS, 150 NS ACCESS TIME - Dual marked (8201006EA) Visit Rochester Electronics LLC Buy
    UPD48011318FF-FH16-FF1-A Renesas Electronics Corporation Low Latency DRAM, T-LBGA, /Tray Visit Renesas Electronics Corporation
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    DRAM Price and Stock

    Samtec Inc QMS-052-01-SL-D-RA-MG

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    DigiKey QMS-052-01-SL-D-RA-MG Tray 772 24
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    Mouser Electronics QMS-052-01-SL-D-RA-MG 228
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    Newark QMS-052-01-SL-D-RA-MG Bulk 24
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    Powell Electronics QMS-052-01-SL-D-RA-MG 48 24
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    Samtec Inc QMS-052-01-SL-D-RA-MG-K-TR

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    DigiKey QMS-052-01-SL-D-RA-MG-K-TR Digi-Reel 280 1
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    QMS-052-01-SL-D-RA-MG-K-TR Cut Tape 280 1
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    QMS-052-01-SL-D-RA-MG-K-TR Reel 125 125
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    Samtec Inc QMS-052-02-SL-D-RA-MG-K-TR

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    DigiKey QMS-052-02-SL-D-RA-MG-K-TR Cut Tape 125 1
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    QMS-052-02-SL-D-RA-MG-K-TR Reel 125 125
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    Samtec Inc QMS-026-01-SL-D-RA-MG

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    DigiKey QMS-026-01-SL-D-RA-MG Tray 65 40
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    Mouser Electronics QMS-026-01-SL-D-RA-MG 110
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    Newark QMS-026-01-SL-D-RA-MG Bulk 2 1
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    Bristol Electronics QMS-026-01-SL-D-RA-MG 77
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    Samtec Inc QMS-078-02-SL-D-RA-MG

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    DigiKey QMS-078-02-SL-D-RA-MG Tray 62 1
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    Avnet Americas QMS-078-02-SL-D-RA-MG Tray 3 Weeks, 2 Days 1
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    Mouser Electronics QMS-078-02-SL-D-RA-MG 8
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    Newark QMS-078-02-SL-D-RA-MG Bulk 1
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    DRAM Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    DRAM0512X8X256 IBM DRAM, Embedded DRAM Original PDF

    DRAM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: CDC319 1-LINE TO 10-LINE CLOCK DRIVER WITH I2C CONTROL INTERFACE SCAS590 – DECEMBER 1997 D D D D D D D D D High-Speed, Low-Skew 1-to-10 Clock Buffer for DRAM Synchronous DRAM Clock Buffering Applications Output Skew, tsk(o), Less Than 250 ps Pulse Skew, tsk(p), Less Than 500 ps


    Original
    PDF CDC319 10-LINE SCAS590 1-to-10 MIL-STD-883, 28-Pin scas590 CDC319DBR CDC319IBIS

    scas640

    Abstract: No abstract text available
    Text: CDCVF2505 3.3-V CLOCK PHASE-LOCK LOOP CLOCK DRIVER SCAS640 – JULY 2000 D D D D D D D D D D D D Phase-Lock Loop Clock Driver for Synchronous DRAM and General-Purpose Applications Spread Spectrum Clock Compatible Operating Frequency: 24 MHz to 200 MHz Low Jitter Cycle-cycle : <|150 ps| Over the


    Original
    PDF CDCVF2505 SCAS640 scas640

    4Mx4 DRAM

    Abstract: No abstract text available
    Text: PcRam TS4MDM32V60 Description Features The TS4MDM32V60 is a 4,194,304-word by 32-bit • 4,194,304-word by 32-bit organization. dynamic RAM module. This module consists of 8 pcs • Fast Page Mode Operation. 4Mx4-bit, 3.3 volt, fast page mode DRAMs in TSOP


    Original
    PDF TS4MDM32V60 TS4MDM32V60 304-word 32-bit 32-bit 4Mx4 DRAM

    simm EDO 72pin

    Abstract: No abstract text available
    Text: 72PIN EDO SIMM 32MB With 4Mx4 60ns TS8MED3260 Description Features The TS8MED3260 is a 8M by 32-bit dynamic RAM • Extended Data Out Mode operation module with 16 pcs of 4Mx4 DRAMs assembled on the • Single +5.0V ± 10% power supply. printed circuit board.


    Original
    PDF 72PIN TS8MED3260 TS8MED3260 32-bit simm EDO 72pin

    45VM32160D

    Abstract: No abstract text available
    Text: IS42/45VM32160D 4M x 32Bits x 4Banks Mobile Synchronous DRAM Description These IS42/45VM32160D are mobile 536,870,912 bits CMOS Synchronous DRAM organized as 4 banks of 4,194,304 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are


    Original
    PDF IS42/45VM32160D 32Bits IS42/45VM32160D -40oC 16Mx32 IS42VM32160D-6BLI IS42VM32160D-75BLI 90-ball 45VM32160D

    SM81600E

    Abstract: IS42SM16800E IS42SM81600E IS42SM16800E-7TLI IS42SM32400E IS42SM32400E-7T IS42SM16800E-7BLI
    Text: IS42SM81600E / IS42SM16800E / IS42SM32400E IS42RM81600E / IS42RM16800E / IS42RM32400E 16Mx8, 8Mx16, 4Mx32 128Mb Mobile Synchronous DRAM APRIL 2011 DESCRIPTION FEATURES • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access and precharge


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    PDF IS42SM81600E IS42SM16800E IS42SM32400E IS42RM81600E IS42RM16800E IS42RM32400E 16Mx8, 8Mx16, 4Mx32 128Mb SM81600E IS42SM16800E-7TLI IS42SM32400E-7T IS42SM16800E-7BLI

    SMNS405A

    Abstract: cms405 CMS408 CMS406
    Text: CMS405, CMS406 4 MEGABYTE CMS407, CMS408 2 MEGABYTE DRAM MEMORY CARDS SMNS405A-JUNE1991-REVISED JANUARY 1993 * Credit Card Size 85.6 mm x 54 mm x 60-PIN MEMORY CARD (CONNECTOR VIEW 3.4 mm) Single 5-V Power Supply (±5% Tolerance) * Enhanced Page Mode Operation


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    PDF CMS405, CMS406 CMS407, CMS408 SMNS405A-JUNE1991-REVISED 60-PIN CMS405 CMS407 SMNS405A

    Untitled

    Abstract: No abstract text available
    Text: SMJ416160, SMJ418160 1048576-WORD BY 16-BIT HIGH-SPEED DRAM 1 SGMS720A - APRIL 1995 - REVISED JUNE 1995 XXX PACKAGE TOP VIEW ACCESS ACCESS ACCESS TIME TIME TIME '41x160-60 41x160-70 '41x160-80 • • • • • • • • tRAC MAX 60 ns 70 ns SO n* *CAC


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    PDF SMJ416160, SMJ418160 1048576-WORD 16-BIT SGMS720A 41x160-60 41x160-70 41x160-80

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA THMY644071EG-10 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 4,194,304-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY644071EG is a 4,194,304-word by 64-bit synchronous dynamic RAM module consisting of four TC59S6416FT DRAMs and an unbuffer on a printed circuit board.


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    PDF THMY644071EG-10 304-WORD 64-BIT THMY644071EG TC59S6416FT THMY644071

    TC528257

    Abstract: n724
    Text: TOSHIBA SILICON GATE CMOS TC528257 t a r g e t s p e c 262,144WORDS X 8BITS MULTIPORT DRAM DESCRIPTION The TC528257 is a 2M bit CM OS multiport m em ory equipped with a 262,144-w ords by 8 -bits dynam ic random access m em ory RAM port and a 512-words by 8 -bits static serial access m emory (SA M ) port. The


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    PDF TC528257 144WORDS TC528257 144-w 512-words TC528257J/SZ/nVTR1017240 TC528257J/SZ/FT/TR-70 TC528257J/SZ/FT/TR-80 n724

    Untitled

    Abstract: No abstract text available
    Text: SMJ44C250 262 144 BY 4-BIT MULTIPORT VIDEO RAM SGMS037 — JANUARY 1991 * Military Operating Temperature Range JD Package* Top View . . , - 5 5 ° C t o 125°C DRAM: 262 144 Words SAM: 512 Words * * * x x 4 Bits 4 Bits 28 : 27 : 3 26 : SDQ2 TRG c 4 25 :


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    PDF SMJ44C250 SGMS037

    Video RAM

    Abstract: TMS55165
    Text: TMS55165 262144 BY 16-BIT MULTIPORT VIDEO RAM SMVS165B-AUGUST1992-flEVISED JANUARY 1993 DGH PACKAGEt TOP VIEW DRAM : 262 144 Words x 16 Bits SAM: 256 Words x 16 Bits Dual Port Accessibility - Simultaneous and Asynchronous Access From the DRAM and SAM Ports


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    PDF TMS55165 16-BIT SMVS165B-AUGUST1992-flEVISED SMVS165B-AUGUST1992-REVISED 16-BIT Video RAM

    r2a3

    Abstract: r1a10 M1367 M4589
    Text: TOSHIBA THMY728010BEG-80L TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,608-WORD BY 72-BIT SYNCHRONOUS D RA M MODULE DESCRIPTION The THMY728010BEG is a 8,388,608-word by 72-bit synchronous dynamic RAM module consisting of nine TC59S6408BFTL DRAMs and PLL/Registers on a printed circuit board.


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    PDF THMY728010BEG-80L THMY728010BEG 608-word 72-bit TC59S6408BFTL 72-bit r2a3 r1a10 M1367 M4589

    SF229

    Abstract: toshiba s105
    Text: TOSHIBA TC528257 t a r g e t s il ic o n g a t e c m o s s p e c 262,144WORDS X 8BITS MULTIPORT DRAM DESCRIPTION T h e T C 5 2 8 2 5 7 is a 2M b it C M O S m u ltip o rt m e m o ry eq u ip p e d w ith a 2 6 2 ,1 4 4 -w o rd s b y ra n d o m a ccess m e m o ry R A M p o rt a n d a 5 1 2 -w o rd s by


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    PDF TC528257 144WORDS SF229 toshiba s105

    2269H

    Abstract: No abstract text available
    Text: TOSHIBA THMY7216C1EG-80H TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY7216C1EG is a 16,777,216-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59S6408FT DRAMs and an unbuffer on a printed circuit board.


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    PDF THMY7216C1EG-80H 216-WORD 72-BIT THMY7216C1EG TC59S6408FT 72-bit THMY7216C1EG) 2269H

    Untitled

    Abstract: No abstract text available
    Text: THM73V8015ATG-4,-5 T O SH IB A TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,6O8-WORD BY 72-BIT DYNAMIC RAM MODULE DESCRIPTION The THM73V8015ATG is a 8,388,608-word by 72-bit dynamic RAM module consisting of nine TC5165805AFT DRAMs on a printed circuit board. This module is optimized for applications which


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    PDF 72-BIT THM73V8015ATG-4 THM73V8015ATG 608-word TC5165805AFT

    TCK-1000

    Abstract: D038 toshiba M7
    Text: TO SH IBA THM Y6480F1 BEG-80 TEN TA TIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388, 6 O8-W O RD B Y 64-BIT SYN CH R O N O U S DRAM M ODULE D ESCRIPTIO N The THMY6480F1BEG is a 8,388,608-word by 64-bit synchronous dynamic RAM module consisting of eight TC59S6408BFT DRAMs and an unbuffer on a printed circuit board.


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    PDF Y6480F1 BEG-80 64-BIT THMY6480F1BEG 608-word TC59S6408BFT 64-bit THMY6480F1 TCK-1000 D038 toshiba M7

    tc516

    Abstract: No abstract text available
    Text: THM73V1615ATG-4,-5 T O SH IB A TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 72-BIT DYNAMIC RAM MODULE DESCRIPTION The THM73V1615ATG is a 16,777,216-word by 72-bit dynamic RAM module consisting of 18 TC5165405AFT DRAMs on a printed circuit board. This module is optimized for applications which


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    PDF THM73V1615ATG-4 216-WORD 72-BIT THM73V1615ATG TC5165405AFT tc516

    jeida dram 88 pin

    Abstract: 88pins toshiba dram jeida dram card 5v 88 pins dram card
    Text: Introduction D R A M ^fe TYPICAL DRAM CARD APPLICATIONS Typical DRAM memory card applications include portable computers, fax machines, electronic instruments, printers and PDAs. THE TOSHIBA DRAM PRODUCT LINE UP Toshiba has migrated to the 88-pin standard, which has replaced the older 38- and 60-pin DRAM cards. Toshiba


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    PDF 88-pin 60-pin jeida dram 88 pin 88pins toshiba dram jeida dram card 5v 88 pins dram card

    Untitled

    Abstract: No abstract text available
    Text: fllCROPAC I N D U S T R I E S INC c JHÈÊ- 1SE D bllStiMD DODDbfll 3 T -S'O -Sf 400-600 MHz MVH 4262 VOLTAGE CONTROLLED OSCILLATOR SERIES PRELIMINARY* VOLTAGE & TEM PERATURE STA BILIZED O SCILLA TO R SU B SY ST E M FEATURES: • Dramatically Improved performance over


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    PDF MVH-1222 MVH-2242 MVH-4282 MVH-5292 MVH-0916 MVH-1323 MVH-12223 MVH-2333 MVH-3343

    1ss nec

    Abstract: No abstract text available
    Text: PRELIM INARY DATA S H E E T MOS IN TEGRATED CIRCUIT MC-428LFF72 3.3 V OPERATION 8 M-WORD BY 72-BIT DYNAMIC RAM MODULE BUFFERED TYPE, HYPER PAGE MODE EDO Description Th e M C-428LFF72 1« • 6.388,608 words by 72 bits dynam ic RAM m oduli on which 8 pieces of 84 M DRAM :


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    PDF MC-428LFF72 72-BIT C-428LFF72 b427525 1ss nec

    AxC11

    Abstract: No abstract text available
    Text: N EC ELECTRONICS INC dEEC ^ t 7 E 1 • tMS7S2S DG3R58b MM3 H N E C E _ 16Mbit Synchronous DRAM_ CONTENTS Programable 3 - stage pipeline. Features.


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    PDF DG3R58b 16Mbit bM27S25 AxC11

    Untitled

    Abstract: No abstract text available
    Text: E2G1059-18-74 O K I Semiconductor This version: Jul. 1998 MSM5716C50/M SM 5718C50/ M D5764802 16M/18Mb 2M x 8/9 & 64Mb (8M x 8) Concurrent DRAM DESCRIPTION The 1 6 /1 8 /64-M egabit C oncurrent Ram bus DRAMs (DRAM ) are extrem ely hi'ghVspeed CMOS DRAMs organized as 2M or 8 M w ords by 8 or 9 bits. They are capable of bursting- linlimi ted


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    PDF E2G1059-18-74 16M/18Mb MSM5716C50/M 5718C50/ D5764802 /64-M

    Untitled

    Abstract: No abstract text available
    Text: TMS55160 262144 BY 16-BIT MULTIPORT VIDEO RAM SMVS160B-AUGUST1992-REVISED JANUARY 1993 * * * * * DGH PACKAGEt DRAM : 262144 Words x 16 Bits SAM: 256 Words x 16 Bits TOP VIEW Dual Port Accessibility - Simultaneous and Asynchronous Access From the DRAM and


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    PDF TMS55160 16-BIT SMVS160B-AUGUST1992-REVISED 16-Blt 77Q01