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    DRAMS Search Results

    DRAMS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMS4030JL Rochester Electronics LLC TMS4030 - DRAM, 4KX1, 300ns, MOS, CDIP22 Visit Rochester Electronics LLC Buy
    4164-15FGS/BZA Rochester Electronics LLC 4164 - DRAM, 64K X 1, 3-STATE OUTPUTS, 150 NS ACCESS TIME - Dual marked (8201006ZA) Visit Rochester Electronics LLC Buy
    4164-12JDS/BEA Rochester Electronics LLC 4164 - DRAM, 64K X 1, 3-STATE OUTPUTS, 120 NS ACCESS TIME - Dual marked (8201008EA) Visit Rochester Electronics LLC Buy
    4164-15JDS/BEA Rochester Electronics LLC 4164 - DRAM, 64K X 1, 3-STATE OUTPUTS, 150 NS ACCESS TIME - Dual marked (8201006EA) Visit Rochester Electronics LLC Buy
    UPD48011318FF-FH16-FF1-A Renesas Electronics Corporation Low Latency DRAM, T-LBGA, /Tray Visit Renesas Electronics Corporation
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    DRAMS Price and Stock

    Adam Technologies Inc DIMM-168-V-1-DRAM

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com DIMM-168-V-1-DRAM
    • 1 -
    • 10 -
    • 100 -
    • 1000 $12.2
    • 10000 $4.34
    		Buy Now

    ROHM Semiconductor BD35395FJ-ME2

    Power Management Specialized - PMIC PNP+NPN Driver Transistor
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI BD35395FJ-ME2 Reel 45,000 2,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.536
    		Buy Now

    DRAMS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    4Mx4 DRAM

    Abstract: No abstract text available
    Text: PcRam TS4MDM32V60 Description Features The TS4MDM32V60 is a 4,194,304-word by 32-bit • 4,194,304-word by 32-bit organization. dynamic RAM module. This module consists of 8 pcs • Fast Page Mode Operation. 4Mx4-bit, 3.3 volt, fast page mode DRAMs in TSOP


    Original     		PDF TS4MDM32V60 TS4MDM32V60 304-word 32-bit 32-bit 4Mx4 DRAM

    simm EDO 72pin

    Abstract: No abstract text available
    Text: 72PIN EDO SIMM 32MB With 4Mx4 60ns TS8MED3260 Description Features The TS8MED3260 is a 8M by 32-bit dynamic RAM • Extended Data Out Mode operation module with 16 pcs of 4Mx4 DRAMs assembled on the • Single +5.0V ± 10% power supply. printed circuit board.


    Original     		PDF 72PIN TS8MED3260 TS8MED3260 32-bit simm EDO 72pin

    Untitled

    Abstract: No abstract text available
    Text: AVED MEMORY PRODUCTS Where Quality & Memory Merge AMP377P3323AT2-C1H/H 32M X 72 SDRAM DIMM with PLL & Register based on 16M X 8, 4 Banks, 4K REFRESH, 3.3V Synchronous DRAMs WITH SPD DESCRIPTION AVED Memory Products AMP377P3323AT2-C1H/H is a 32M bit X 72 Synchronous Dynamic RAM high density memory


    Original     		PDF AMP377P3323AT2-C1H/H AMP377P3323AT2-C1H/H 400mil 18-bits 168-pin 0022uF 100MHz 100MHz

    74605

    Abstract: No abstract text available
    Text: AVED MEMORY PRODUCTS Where Quality & Memory Merge AVED16P664LS49-C75 16M X 64 SDRAM DIMM based on 16M X 8, 4 Banks, 4K REFRESH, 3.3V Synchronous DRAMs WITH SPD DESCRIPTION AVED Memory Products AVED16P664LS49-C75 is a 16M bit X 64 Synchronous Dynamic RAM high density memory module. The AVED Memory Products AVED16P664LS49-C75


    Original     		PDF AVED16P664LS49-C75 AVED16P664LS49-C75 400mil 144-pin 144-pin 74605

    Untitled

    Abstract: No abstract text available
    Text: AVED MEMORY PRODUCTS Where Quality & Memory Merge AMP366P1723AT2-C1H 16M X 64 SDRAM DIMM based on 16M X 8, 4 Banks, 4K REFRESH, 3.3V Synchronous DRAMs WITH SPD DESCRIPTION AVED Memory Products AMP366P1723AT2-C1H is a 16M bit X 64 Synchronous Dynamic RAM high density memory module. The AVED Memory Products AMP366P1723AT2-C1H


    Original     		PDF AMP366P1723AT2-C1H AMP366P1723AT2-C1H 400mil 168-pin 100MHz

    Untitled

    Abstract: No abstract text available
    Text: AVED MEMORY PRODUCTS Where Quality & Memory Merge AMP366P1623BTE-C75/H 16M X 64 SDRAM DIMM, Unbuffered, based on 8M X 8, 4 Banks, 4K Refresh, 3.3V Synchronous DRAMs WITH SPD DESCRIPTION AVED Memory Products AMP366P1623BTE-C75/H is a 16M bit X 64 Synchronous Dynamic RAM high density memory


    Original     		PDF AMP366P1623BTE-C75/H AMP366P1623BTE-C75/H 400mil 168-pin 168-pin6 100MHz PC100

    Untitled

    Abstract: No abstract text available
    Text: AVED MEMORY PRODUCTS Where Quality & Memory Merge AMP374P1723AT2-C1L 16M X 72 SDRAM DIMM with ECC based on 16M X 8, 4 Banks, 4K REFRESH, 3.3V Synchronous DRAMs WITH SPD DESCRIPTION AVED Memory Products AMP374P1723AT2-C1L is a 16M bit X 72 Synchronous Dynamic


    Original     		PDF AMP374P1723AT2-C1L AMP374P1723AT2-C1L 400mil 168-pin 168-MHz 100MHz

    AVED8P664LS48-C75

    Abstract: No abstract text available
    Text: AVED MEMORY PRODUCTS Where Quality & Memory Merge AVED8P664LS48-C75 8M X 64 SDRAM SODIMM based on 4M X 16, 4 Banks, 4K Refresh, 3.3V Synchronous DRAMS with SPD DESCRIPTION AVED Memory Products AVED8P664LS48-C75 is a 8M bit x 64 Synchronous Dynamic RAM high density memory module. The


    Original     		PDF AVED8P664LS48-C75 AVED8P664LS48-C75 400mil 144-pin non-256M

    Untitled

    Abstract: No abstract text available
    Text: AVED MEMORY PRODUCTS Where Quality & Memory Merge AMP366P1723BT2-C75 16M X 64 SDRAM DIMM based on 16M X 8, 4 Banks, 4K REFRESH, 3.3V Synchronous DRAMs WITH SPD DESCRIPTION AVED Memory Products AMP366P1723BT2-C75 is a 16M bit X 64 Synchronous Dynamic RAM high density memory module. The AVED Memory Products AMP366P1723BT2-C75


    Original     		PDF AMP366P1723BT2-C75 AMP366P1723BT2-C75 400mil 168-pin 100MHz PC100

    Untitled

    Abstract: No abstract text available
    Text: AVED MEMORY PRODUCTS Where Quality & Memory Merge AMP374P3323CT2-C75 32M X 72 SDRAM DIMM with ECC based on 16M X 8, 4 Banks, 4K REFRESH, 3.3V Synchronous DRAMs WITH SPD DESCRIPTION AVED Memory Products AMP374P3323CT2-C75 is a 32M bit X 72 Synchronous Dynamic


    Original     		PDF AMP374P3323CT2-C75 AMP374P3323CT2-C75 400mil 168-pin 100MHz PC100

    M366S6453DTS

    Abstract: No abstract text available
    Text: M366S6453DTS PC133/PC100 Unbuffered DIMM M366S6453DTS SDRAM DIMM 64Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M366S6453DTS is a 64M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung


    Original     		PDF M366S6453DTS PC133/PC100 M366S6453DTS 64Mx64 32Mx8, 400mil 168-pin

    b1a12

    Abstract: M390S2950MTU M390S2950MTU-C1H M390S2950MTU-C1L M390S2950MTU-C75 PC133 registered reference design
    Text: Preliminary PC133/100 Low Profile Registered DIMM M390S2950MTU M390S2950MTU SDRAM DIMM 128Mx72 SDRAM DIMM with PLL & Register based on 128Mx4, 4Banks, 8K Ref., 3.3V Synchronous DRAMs with SPD FEATURE GENERAL DESCRIPTION • Performance range The Samsung M390S2950MTU is a 128M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung M390S2950MTU consists of eighteen CMOS 128Mx4 bit


    Original     		PDF PC133/100 M390S2950MTU M390S2950MTU 128Mx72 128Mx4, 128Mx4 400mil 18bits b1a12 M390S2950MTU-C1H M390S2950MTU-C1L M390S2950MTU-C75 PC133 registered reference design

    M374S6453CTS

    Abstract: No abstract text available
    Text: PC133/PC100 Unbuffered DIMM M374S6453CTS M374S6453CTS SDRAM DIMM 64Mx72 SDRAM DIMM with ECC based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M374S6453CTS is a 64M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung


    Original     		PDF PC133/PC100 M374S6453CTS M374S6453CTS 64Mx72 32Mx8, 400mil 168-pin

    M390S3320DT1-C7A

    Abstract: M390S3320DT1 M390S3320DT1-C7C PC133 registered reference design
    Text: PC133 Registered DIMM M390S3320DT1 M390S3320DT1 SDRAM DIMM 32Mx72 SDRAM DIMM with PLL & Register based on 32Mx4, 4Banks 4K Ref., 3.3V Synchronous DRAMs with SPD FEATURE GENERAL DESCRIPTION The Samsung M390S3320DT1 is a 32M bit x 72 Synchronous •Performance range


    Original     		PDF PC133 M390S3320DT1 M390S3320DT1 32Mx72 32Mx4, M390S3320DT1-C7C 24-pin 133MHz M390S3320DT1-C7A M390S3320DT1-C7A M390S3320DT1-C7C PC133 registered reference design

    Untitled

    Abstract: No abstract text available
    Text: PC133/PC100 Unbuffered DIMM M374S6453DTS M374S6453DTS SDRAM DIMM 64Mx72 SDRAM DIMM with ECC based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE • Performance range The Samsung M374S6453DTS is a 64M bit x 72 Synchronous


    Original     		PDF PC133/PC100 M374S6453DTS M374S6453DTS 64Mx72 32Mx8, 400mil 168-pin

    M377S2953MT3

    Abstract: M377S2953MT3-C1H M377S2953MT3-C1L
    Text: preliminary PC100 Registered DIMM M377S2953MT3 M377S2953MT3 SDRAM DIMM Intel 1.2 ver Base 128Mx72 SDRAM DIMM with PLL & Register based on 64Mx8, 4Banks 8K Ref., 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M377S2953MT3 is a 128M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung M377S2953MT3 consists of eighteen CMOS 64Mx8 bit


    Original     		PDF PC100 M377S2953MT3 M377S2953MT3 128Mx72 64Mx8, 64Mx8 400mil 18bits M377S2953MT3-C1H M377S2953MT3-C1L

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA THMY644071EG-10 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 4,194,304-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY644071EG is a 4,194,304-word by 64-bit synchronous dynamic RAM module consisting of four TC59S6416FT DRAMs and an unbuffer on a printed circuit board.


    OCR Scan     		PDF THMY644071EG-10 304-WORD 64-BIT THMY644071EG TC59S6416FT THMY644071

    r2a3

    Abstract: r1a10 M1367 M4589
    Text: TOSHIBA THMY728010BEG-80L TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,608-WORD BY 72-BIT SYNCHRONOUS D RA M MODULE DESCRIPTION The THMY728010BEG is a 8,388,608-word by 72-bit synchronous dynamic RAM module consisting of nine TC59S6408BFTL DRAMs and PLL/Registers on a printed circuit board.


    OCR Scan     		PDF THMY728010BEG-80L THMY728010BEG 608-word 72-bit TC59S6408BFTL 72-bit r2a3 r1a10 M1367 M4589

    v801

    Abstract: tc5165165
    Text: T O SH IB A THM72V8015ATG-4,-5 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,6O8-WORD BY 72-BIT DYNAMIC RAM MODULE DESCRIPTION The THM72V8015ATG is a 8,388,608-word by 72-bit dynamic RAM module consisting of nine TC5165805AFT DRAMs on a printed circuit board. This module is optimized for applications which


    OCR Scan     		PDF THM72V8015ATG-4 72-BIT THM72V8015ATG 608-word TC5165805AFT v801 tc5165165

    2269H

    Abstract: No abstract text available
    Text: TOSHIBA THMY7216C1EG-80H TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY7216C1EG is a 16,777,216-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59S6408FT DRAMs and an unbuffer on a printed circuit board.


    OCR Scan     		PDF THMY7216C1EG-80H 216-WORD 72-BIT THMY7216C1EG TC59S6408FT 72-bit THMY7216C1EG) 2269H

    Untitled

    Abstract: No abstract text available
    Text: THM73V8015ATG-4,-5 T O SH IB A TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,6O8-WORD BY 72-BIT DYNAMIC RAM MODULE DESCRIPTION The THM73V8015ATG is a 8,388,608-word by 72-bit dynamic RAM module consisting of nine TC5165805AFT DRAMs on a printed circuit board. This module is optimized for applications which


    OCR Scan     		PDF 72-BIT THM73V8015ATG-4 THM73V8015ATG 608-word TC5165805AFT

    TCK-1000

    Abstract: D038 toshiba M7
    Text: TO SH IBA THM Y6480F1 BEG-80 TEN TA TIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388, 6 O8-W O RD B Y 64-BIT SYN CH R O N O U S DRAM M ODULE D ESCRIPTIO N The THMY6480F1BEG is a 8,388,608-word by 64-bit synchronous dynamic RAM module consisting of eight TC59S6408BFT DRAMs and an unbuffer on a printed circuit board.


    OCR Scan     		PDF Y6480F1 BEG-80 64-BIT THMY6480F1BEG 608-word TC59S6408BFT 64-bit THMY6480F1 TCK-1000 D038 toshiba M7

    tc516

    Abstract: No abstract text available
    Text: THM73V1615ATG-4,-5 T O SH IB A TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 72-BIT DYNAMIC RAM MODULE DESCRIPTION The THM73V1615ATG is a 16,777,216-word by 72-bit dynamic RAM module consisting of 18 TC5165405AFT DRAMs on a printed circuit board. This module is optimized for applications which


    OCR Scan     		PDF THM73V1615ATG-4 216-WORD 72-BIT THM73V1615ATG TC5165405AFT tc516

    Untitled

    Abstract: No abstract text available
    Text: E2G1059-18-74 O K I Semiconductor This version: Jul. 1998 MSM5716C50/M SM 5718C50/ M D5764802 16M/18Mb 2M x 8/9 & 64Mb (8M x 8) Concurrent RDRAM DESCRIPTION The 1 6 /1 8 /64-M egabit C oncurrent Ram bus DRAMs (RDRAM ) are extrem ely hi'ghVspeed CMOS DRAMs organized as 2M or 8 M w ords by 8 or 9 bits. They are capable of bursting- linlimi ted


    OCR Scan     		PDF E2G1059-18-74 16M/18Mb MSM5716C50/M 5718C50/ D5764802 /64-M