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    DS 1-08 DIODE Search Results

    DS 1-08 DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DS 1-08 DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    semikron SKFT 150

    Abstract: Semipack 1 skfh skfh semikron thyristor Semipack skfh semikron
    Text: VDRM VRRM tq Tvj = 125 °C ITRMS (maximum values for continuous operation) 350 A V µs 800 15 20 SKFT 150/08 DS SKFT 150/08 DT 1000 15 SKFT 150/10 DS 1) ITAV (sin. 180; Tcase = 76 °C; 50 Hz) 150 A SKFH 150/08 DS SKFH 150/08 DT SEMIPACK 3 Fast Thyristor/ Diode


    Original     		PDF

    DIODE D29 -08

    Abstract: 3N06L08 Diode d29 08 ANPS071E IPB80N06S3L-08 IPI80N06S3L-08 IPP80N06S3L-08 PG-TO263-3-2 GD15-0
    Text: IPB80N06S3L-08 IPI80N06S3L-08, IPP80N06S3L-08 OptiMOS -T2 Power-Transistor Product Summary V DS 55 V R DS on ,max (SMD version) 7.6 mΩ ID 80 A Features • N-channel - Enhancement mode PG-TO263-3-2 • Automotive AEC Q101 qualified PG-TO262-3-1 PG-TO220-3-1


    Original     		PDF IPB80N06S3L-08 IPI80N06S3L-08, IPP80N06S3L-08 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 3N06L08 IPI80N06S3L-08 DIODE D29 -08 3N06L08 Diode d29 08 ANPS071E IPB80N06S3L-08 IPI80N06S3L-08 IPP80N06S3L-08 PG-TO263-3-2 GD15-0

    2n03l08

    Abstract: D36A 2N03L08 2N03L08 SPI73N03S2L-08 SPB73N03S2L-08 SPP73N03S2L-08 ANPS071E
    Text: SPI73N03S2L-08 SPP73N03S2L-08,SPB73N03S2L-08 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 30 V • Enhancement mode R DS on 8.4 mΩ ID 73 A • Logic Level • Excellent Gate Charge x R DS(on) P- TO262 -3-1 P- TO263 -3-2 P- TO220 -3-1


    Original     		PDF SPI73N03S2L-08 SPP73N03S2L-08 SPB73N03S2L-08 SPP73N03S2L-08 Q67042-S4037 Q67042-S4036 2N03L08 Q67042-S4081 2n03l08 D36A 2N03L08 2N03L08 SPI73N03S2L-08 SPB73N03S2L-08 ANPS071E

    CW25-TIM application note

    Abstract: cw25-tim cw25-nav GPS receiver CW25 TIM gsm based digital notice board using arm processor CR2032 3.3V battery BB25IC
    Text: CW25-TIM Bulletin Revision Date NS18-DS 08 13 April 2010 2 NS18-DS CW25-TIM Copyright 2010 NavSync Ltd. All Rights Reserved Rev 08 Date: 04/13/10 Specifications subject to change without notice. TABLE OF CONTENTS 1 INTRODUCTION- 5


    Original     		PDF CW25-TIM NS18-DS NS18-DSCW25-TIM CW25-TIM application note cw25-tim cw25-nav GPS receiver CW25 TIM gsm based digital notice board using arm processor CR2032 3.3V battery BB25IC

    4N06L08

    Abstract: 71A marking IPB45N06S4L-08 IPI45N06S4L-08 IPP45N06S4L-08 PG-TO263-3-2 smd8050 C12140
    Text: IPB45N06S4L-08 IPI45N06S4L-08, IPP45N06S4L-08 OptiMOS -T2 Power-Transistor Product Summary V DS 60 V R DS on ,max (SMD version) 7.9 mΩ ID 45 A Features • N-channel - Enhancement mode PG-TO263-3-2 • AEC Q101 qualified PG-TO262-3-1 PG-TO220-3-1 • MSL1 up to 260°C peak reflow


    Original     		PDF IPB45N06S4L-08 IPI45N06S4L-08, IPP45N06S4L-08 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 4N06L08 IPI45N06S4L-08 4N06L08 71A marking IPB45N06S4L-08 IPI45N06S4L-08 IPP45N06S4L-08 PG-TO263-3-2 smd8050 C12140

    Untitled

    Abstract: No abstract text available
    Text: IPB80P04P4L-08 IPI80P04P4L-08, IPP80P04P4L-08 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on (SMD Version) 7.9 mW ID -80 A Features • P-channel - Logic Level - Enhancement mode PG-TO263-3-2 • AEC qualified PG-TO262-3-1 PG-TO220-3-1 • MSL1 up to 260°C peak reflow


    Original     		PDF IPB80P04P4L-08 IPI80P04P4L-08, IPP80P04P4L-08 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 IPB70P04P4L-08 4P04L08 IPI70P04P4L-08

    4P04L08

    Abstract: IPP70P04P4L-08 IPP80P04P4L-08 smd diode UM 08
    Text: IPB80P04P4L-08 IPI80P04P4L-08, IPP80P04P4L-08 OptiMOS -P2 Power-Transistor Product Summary V DS -40 V R DS on (SMD Version) 7.9 mW ID -80 A Features • P-channel - Logic Level - Enhancement mode PG-TO263-3-2 • AEC qualified PG-TO262-3-1 PG-TO220-3-1 • MSL1 up to 260°C peak reflow


    Original     		PDF IPB80P04P4L-08 IPI80P04P4L-08, IPP80P04P4L-08 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 IPB70P04P4L-08 IPI70P04P4L-08 IPP70P04P4L-08 4P04L08 IPP70P04P4L-08 IPP80P04P4L-08 smd diode UM 08

    4N04L08

    Abstract: DIODE smd marking Ag F45A smd diode marking DD IPI45N04S4L-08 IPB45N04S4L IPB45N04S4L-08 PG-TO263-3-2 D-22A GD25Q
    Text: IPB45N04S4L-08 IPI45N04S4L-08, IPP45N04S4L-08 OptiMOS -T2 Power-Transistor Product Summary Features V DS 40 V R DS on ,max (SMD version) 7.6 mΩ ID 45 A PG-TO263-3-2 • N-channel - Enhancement mode PG-TO262-3-1 PG-TO220-3-1 • AEC qualified • MSL1 up to 260°C peak reflow


    Original     		PDF IPB45N04S4L-08 IPI45N04S4L-08, IPP45N04S4L-08 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 4N04L08 IPI45N04S4L-08 4N04L08 DIODE smd marking Ag F45A smd diode marking DD IPI45N04S4L-08 IPB45N04S4L IPB45N04S4L-08 PG-TO263-3-2 D-22A GD25Q

    STP80NF55-08 equivalent

    Abstract: STB80NF55-08 STB80NF55-08-1 STP80NF55-08
    Text: STP80NF55-08 STB80NF55-08 STB80NF55-08-1 N-CHANNEL 55V - 0.0065 Ω - 80A D2PAK/I2PAK/TO-220 STripFET II POWER MOSFET TYPE STB80NF55-08/-1 STP80NF55-08 • ■ VDSS R DS on ID 55 V 55 V <0.008 Ω <0.008 Ω 80 A 80 A TYPICAL RDS(on) = 0.0065Ω LOW THRESHOLD DRIVE


    Original     		PDF STP80NF55-08 STB80NF55-08 STB80NF55-08-1 D2PAK/I2PAK/TO-220 STB80NF55-08/-1 STP80NF55-08 equivalent STB80NF55-08-1 STP80NF55-08

    2N0608

    Abstract: ANPS071E SPB80N06S2-08 SPI80N06S2-08 SPP80N06S2-08 smd marking 58a SMD marking code 58A
    Text: SPI80N06S2-08 SPP80N06S2-08,SPB80N06S2-08 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS • Enhancement mode R DS on ID • 175°C operating temperature • Avalanche rated 55 P- TO262 -3-1 V 8 mΩ 80 P- TO263 -3-2 A P- TO220 -3-1


    Original     		PDF SPI80N06S2-08 SPP80N06S2-08 SPB80N06S2-08 SPP80N06S2-08 Q67060-S4283 Q67060-S4284 2N0608 Q67060-S7430 2N0608 ANPS071E SPB80N06S2-08 SPI80N06S2-08 smd marking 58a SMD marking code 58A

    2n0608

    Abstract: i 2n0608 Q67060-S4284 ANPS071E SPB80N06S2-08 SPI80N06S2-08 SPP80N06S2-08 smd marking 58a
    Text: SPI80N06S2-08 SPP80N06S2-08,SPB80N06S2-08 OptiMOS =Power-Transistor Product Summary Feature 55 VDS  N-Channel R DS on  Enhancement mode ID 175°C operating temperature P- TO262 -3-1  Avalanche rated V m 8 80 P- TO263 -3-2 A P- TO220 -3-1  dv/dt rated


    Original     		PDF SPI80N06S2-08 SPP80N06S2-08 SPB80N06S2-08 SPP80N06S2-08 Q67060-S4283 Q67060-S4284 2N0608 Q67060-S7430 2n0608 i 2n0608 Q67060-S4284 ANPS071E SPB80N06S2-08 SPI80N06S2-08 smd marking 58a

    2n03l08

    Abstract: 2N03L08 2N03L08 smd G47 A140H INFINEON PART MARKING to263 D36A
    Text: SPI73N03S2L-08 SPP73N03S2L-08,SPB73N03S2L-08 OptiMOS =Power-Transistor Product Summary Feature  N-Channel  Enhancement mode  Logic Level  Excellent Gate Charge x RDS on P- TO262 -3-1 VDS 30 R DS(on) 8.4 m ID 73 A P- TO263 -3-2 V P- TO220 -3-1 product (FOM)


    Original     		PDF SPI73N03S2L-08 SPP73N03S2L-08 SPB73N03S2L-08 SPB73N03S2L-08 Q67042-S4037 Q67042-S4036 Q67042-S4081 2N03L08 2N03L08 2N03L08 smd G47 A140H INFINEON PART MARKING to263 D36A

    Untitled

    Abstract: No abstract text available
    Text: Photointerrupter Product Data Sheet LTH-306-08 Spec No.: DS-55-95-0005 Effective Date: 08/29/2001 Revision: - LITE-ON DCC RELEASE BNS-OD-FC001/A4 LITE-ON Technology Corp. / Optoelectronics No.90,Chien 1 Road, Chung Ho, New Taipei City 23585, Taiwan, R.O.C.


    Original     		PDF LTH-306-08 DS-55-95-0005 BNS-OD-FC001/A4 LTH-306-08 BNS-OD-C131/A4

    2n0608

    Abstract: Q67040-S4283 smd marking 58a SPB80N06S2-08 SPP80N06S2-08
    Text: SPP80N06S2-08 SPB80N06S2-08 Preliminary data OptiMOS =Power-Transistor Product Summary Feature VDS • N-Channel 55 R DS on • Enhancement mode ID •=175°C operating temperature • Avalanche rated V 8 mΩ 80 P-TO263-3-2 A P-TO220-3-1 • dv/dt rated


    Original     		PDF SPP80N06S2-08 SPB80N06S2-08 P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 Q67040-S4283 P-TO263-3-2 Q67040-S4284 2n0608 Q67040-S4283 smd marking 58a SPB80N06S2-08 SPP80N06S2-08

    2N0308

    Abstract: No abstract text available
    Text: SPU30N03S2-08 OptiMOS Power-Transistor Product Summary Feature VDS 30 V •Enhancement mode RDS on 8.2 mΩ •Low On-Resistance RDS(on) ID 30 A •N-Channel •Excellent Gate Charge x R DS(on) product (FOM) P- TO251 -3-1 •Superior thermal resistance


    Original     		PDF SPU30N03S2-08 SPU30N03S2-08 Q67042-S4140 2N0308 BSPU30N03S2-08, 2N0308

    diode avalanche DSA 2-16a

    Abstract: diode avalanche DSA diode avalanche DSA 1-14 DSA 22-12 A diode avalanche DSA 17-14 A diode avalanche DSA 25 8
    Text: A S E A BRO WN/ABB SEMICON 03 D I 00MÖ3DÖ □ □ □ □ ! £ ? I T - o I- ot SE2HHS£tu7"^ Netzdioden Rectifier diodes Diode Vrrm IpRMS Ifavi os DSA Typ/type DS DS DS DS DS 1-04 1-08 1-12 1-14 1-16 f DSI DS 1,2-04 E DS 1,2-08 E DS 1,2-12 E DS 1,2-14 E


    OCR Scan     		PDF

    ds 35-12 e

    Abstract: 4508A DSA117-16 dsai17-12a DSAI11016F A 3150 V DSAI110
    Text: Rectifier Diodes 'FA V = 2 - 77 A, Standard Diodes DS. , Avalanche Diodes (DSA.) Type FAV FSM T =100°C 45°C 10 ms New DS 1-12 D DSA 1-12 D DSA 1-16 D DSA 1-18 D DS 2-08 A DS 2-12 A DSA 2-12 A DSA 2-16 A DSA 2-18 A DSP 8-08 A DSP 8-12 A DSP 8-08 AS OSP 8-12 AS


    OCR Scan     		PDF DSAI17-12 DSA117-16 OSAI35-12 DSAI35-16 DSAI35-18 ASAI75-18B D0-205AC D0-30) DSAI110-12 DSAI110-16 ds 35-12 e 4508A dsai17-12a DSAI11016F A 3150 V DSAI110

    DSA117-16

    Abstract: dsai17-12a DSA1110 35-16A DSAI DSA1110-16 10MSA
    Text: Rectifier Diodes lFAV= 2 - 160 A, Standard Diodes DS. , Avalanche Diodes (DSA.) VRRM Type * Delivery time on request ► New DS DSA DSA DSA DS DS DSA DSA DSA ► DSP ► DSP ► DSP V 1-12 D 1-12 D 1-16 D 1-18 D * 2-08 A 2-12 A 2-12 A 2-16 A 2-18 A* 8-08 A


    OCR Scan     		PDF D0-203AB -28UNI D0-205AC DSA117-16 dsai17-12a DSA1110 35-16A DSAI DSA1110-16 10MSA

    skfh150

    Abstract: No abstract text available
    Text: se MIKRD n V drm tq Itrm s maximum values for continuous operation V rrm (Tv| = 125 °C) 350 A V (is 800 15 20 SKFT 150/08 DS SKFT 150/08 DT 1000 15 SKFT 150/10 DS 1) Ita v (sin. 180; Tease = 76 °C; 50 Hz) 150 A SKFH 150/08 DS SKFH 150/08 DT SEMIPACK 3


    OCR Scan     		PDF FT150 SKFT150 SKFH150 013bL G00473A skfh150

    Untitled

    Abstract: No abstract text available
    Text: 5EMIKR0N V rrm tq T*j = 125 °C Itrms (maximum values for continuous operation) 350 A V US 150 A 800 15 20 SKFT 150/08 DS SKFT 150/08 DT 1000 15 SKFT 150/10 D S 1) V drm I t a v (sin. 160', Tease = 76 °C; 50 Hz) SKFH 150/08 DS SKFH 150/08 DT SEMIPACK 3


    OCR Scan     		PDF SKFH150 SKFT150 A13bb71

    diode avalanche DSA

    Abstract: diode avalanche DSA 42 diode avalanche DSA 25 8 diodes DSA 6 A 1712 25-16AT 2X17 10-32-UNF-2A
    Text: Rectifier Diodes lFAV = 2 - 45 A, Standard Diodes DS. , Avalanche Diodes (DSA.) Type ^RR M *FAV V 100°C A 2.3 p ^FRMS 1-12 D 1200 DSA 1-12 D DSA 1-16 D DSA 1-18 D DS 1200 1600 1800 DS DS 2-08 A 2-12 A 800 1200 DSA 2-12 A DSA 2-16 A DSA 2-18 A 1200 1600


    OCR Scan     		PDF O-220AB O-220 O-268 ISOPLUS220TM 10-32UNF2A diode avalanche DSA diode avalanche DSA 42 diode avalanche DSA 25 8 diodes DSA 6 A 1712 25-16AT 2X17 10-32-UNF-2A

    semikron SKFT 150

    Abstract: semikron SKFT 40
    Text: SEMIKRON tq Tvj = 125 °C Itrms (m axim um values fo r contin u o us operation) V rrm V US 150 A 800 15 20 SKFT 150/08 DS SKFT 150/08 DT 1000 15 SKFT 150/10 D S 1) V drm 350 A Itav (sin. 180; Tease = 76 °C; 50 Hz) SKFH 150/08 DS SKFH 150/08 DT SEMIPACK 3


    OCR Scan     		PDF SKFT150 semikron SKFT 150 semikron SKFT 40

    56088

    Abstract: No abstract text available
    Text: Tem ic SUP/SUB75P03-08 S em i co n d u c t or s P-Channel Enhancement-Mode Transistors Product Summary V BR DSS (V) -3 0 I d (A) r DS(on) ( ^ ) 0.008 -7 5 a T0-220AB o TO-263 < ni 1 n DRAIN connected to TAB G D S Top View GD S o D SUB75P03-08 Top View SUP75P03-08


    OCR Scan     		PDF SUP/SUB75P03-08 T0-220AB O-263 SUP75P03-08 SUB75P03-08 T0-220AB O-263) O-263 S-56088--Rev. 19-Dec-97 56088

    Untitled

    Abstract: No abstract text available
    Text: 1SE 0 I 0l3bL71 000140*1 T I S EMIKRON INC iEMÜffiON V drm V rrm Itrms maximum values for continuous operation 75 A | 75 A tq (Tvj — 125 °C) Itav (sin. 180; Teas* = 8 9 °C ;5 0 H z) 30 A 30 A V US 600 15 20 SKFT30/06 DS SKFT 30/06 DT 800 15 20 SKFT 30/08 DS


    OCR Scan     		PDF 0l3bL71 SKFT30/06 SKFT30 500Hz