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    DS 469 ADJ Search Results

    DS 469 ADJ Result Highlights (4)

    Part ECAD Model Manufacturer Description Download Buy
    TCKE712BNL Toshiba Electronic Devices & Storage Corporation eFuse IC (electronic Fuse), 4.4 to 13.2 V, 3.65 A, Latch, Adjustable Over Voltage Protection, WSON10 Visit Toshiba Electronic Devices & Storage Corporation
    UC2907J Rochester Electronics LLC Power Supply Support Circuit, Adjustable, 1 Channel, CDIP16, CERAMIC, DIP-16 Visit Rochester Electronics LLC Buy
    CA3085B Rochester Electronics LLC Adjustable Positive Standard Regulator, 1.7V Min, 46V Max, BIPolar, MBCY8, METAL CAN-8 Visit Rochester Electronics LLC Buy
    CA3085AE Rochester Electronics LLC Adjustable Positive Standard Regulator, 1.6V Min, 37V Max, BIPolar, PDIP8, PLASTIC, DIP-8 Visit Rochester Electronics LLC Buy

    DS 469 ADJ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: F-213-1 26-JUL-13 ERM8–013–05.0–S–DV–DS–L–TR ERM8–030–02.0–S–DV–TR (0,80 mm) .0315" ERM8–060–05.0–L–DV–TR ERM8 SERIES RUGGED HIGH SPEED HEADER SPECIFICATIONS Board Mates: ERF8 For complete specifications and recommended PCB layouts see


    Original     		PDF F-213-1 26-JUL-13)

    Untitled

    Abstract: No abstract text available
    Text: F-213-1 ERM8–013–05.0–S–DV–DS–L–TR ERM8–030–02.0–S–DV–TR 0,80 mm .0315" ERM8–060–05.0–L–DV–TR ERM8 SERIES RUGGED HIGH SPEED HEADER SPECIFICATIONS Board Mates: ERF8 For complete specifications and recommended PCB layouts see


    Original     		PDF F-213-1 NEXUS5001â

    Untitled

    Abstract: No abstract text available
    Text: F-211-1 ERM8–013–05.0–S–DV–DS–L–TR ERM8–030–02.0–S–DV–TR 0,80mm .0315" ERM8–060–05.0–L–DV–TR ERM8 SERIES RUGGED HIGH SPEED HEADER Board Mates: ERF8 SPECIFICATIONS For complete specifications and recommended PCB layouts see


    Original     		PDF F-211-1 NEXUS5001â 23ting

    erm8

    Abstract: No abstract text available
    Text: F-212 ERM8–013–05.0–S–DV–DS–L–TR ERM8–030–02.0–S–DV–TR 0,80mm .0315" ERM8–060–05.0–L–DV–TR ERM8 SERIES RUGGED HIGH SPEED HEADER SPECIFICATIONS Board Mates: ERF8 For complete specifications and recommended PCB layouts see


    Original     		PDF F-212 erm8

    Untitled

    Abstract: No abstract text available
    Text: F-211-2 ERM8–013–05.0–S–DV–DS–L–TR ERM8–030–02.0–S–DV–TR 0,80mm .0315" ERM8–060–05.0–L–DV–TR ERM8 SERIES RUGGED HIGH SPEED HEADER Board Mates: ERF8 SPECIFICATIONS For complete specifications and recommended PCB layouts see


    Original     		PDF F-211-2 NEXUS5001â 23ting

    po111

    Abstract: 3773 transistor voltage diagram BCP56 LM7805 PTFA041501GL PTFA041501HL infineon gold
    Text: PTFA041501GL PTFA041501HL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 150 W, 420 – 500 MHz Description The PTFA041501GL and PTFA041501HL are 150-watt LDMOS FETs designed for ultra-linear CDMA power amplifier applications. They


    Original     		PDF PTFA041501GL PTFA041501HL PTFA041501GL PTFA041501HL 150-watt PG-64248-2 IS-95 po111 3773 transistor voltage diagram BCP56 LM7805 infineon gold

    roger

    Abstract: H-30260-2 LM7805 ceramic capacitor 103 z 21
    Text: PTF041501E PTF041501F Thermally-Enhanced High Power RF LDMOS FETs 150 W, 450 – 500 MHz Description The PTF041501E and PTF041501F are thermally-enhanced, 150watt, internally-matched GOLDMOS FETs intended for ultra-linear CDMA applications. They are characterized for CDMA and


    Original     		PDF PTF041501E PTF041501F 150watt, CDMA2000 H-30260-2 H-31260-2 roger H-30260-2 LM7805 ceramic capacitor 103 z 21

    po111

    Abstract: LM7805 LM780
    Text: PTFA041501GL PTFA041501HL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 150 W, 420 – 500 MHz Description The PTFA041501GL and PTFA041501HL are 150-watt LDMOS FETs designed for ultra-linear CDMA power amplifier applications. They


    Original     		PDF PTFA041501GL PTFA041501HL PTFA041501HL 150-watt PG-63248-2 PG-64248-2 IS-95 po111 LM7805 LM780

    DS 469 ADJ

    Abstract: type 103 capacitor, 2kv RF
    Text: PTF040551E PTF040551F Thermally Enhanced High Power RF LDMOS FETs 55 W, 450 – 500 MHz Description The PTF040551E and PTF040551F are thermally-enhanced, 55-watt, internally matched GOLDMOS FETs intended for CDMA applications in the 450 to 500 MHz band. Full gold metallization ensures excellent device


    Original     		PDF PTF040551E PTF040551F 55-watt, PTF040551F* IS-95 DS 469 ADJ type 103 capacitor, 2kv RF

    SCHEMATIC DIAGRAM 3.3kv

    Abstract: BCP56 LM7805 PTF041501E PTF041501F ceramic capacitor 103 z 21
    Text: PTF041501E PTF041501F Thermally-Enhanced High Power RF LDMOS FETs 150 W, 450 – 500 MHz Description The PTF041501E and PTF041501F are thermally-enhanced, 150watt, internally-matched GOLDMOS FETs intended for ultra-linear CDMA applications. They are characaterized for CDMA and


    Original     		PDF PTF041501E PTF041501F PTF041501E PTF041501F 150watt, CDMA2000 IS-95 SCHEMATIC DIAGRAM 3.3kv BCP56 LM7805 ceramic capacitor 103 z 21

    PTFA041501E

    Abstract: BCP56 LM7805 PTFA041501F R250 LM7805 voltage regulator packages
    Text: PTFA041501E PTFA041501F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 150 W, 420 – 500 MHz Description The PTFA041501E and PTFA041501F are 150-watt LDMOS FETs designed for ultra-linear CDMA power amplifier applications.


    Original     		PDF PTFA041501E PTFA041501F PTFA041501E PTFA041501F 150-watt H-36248-2 H-37248-2 IS-95 BCP56 LM7805 R250 LM7805 voltage regulator packages

    Untitled

    Abstract: No abstract text available
    Text: PTFA041501E PTFA041501F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 150 W, 420 – 500 MHz Description The PTFA041501E and PTFA041501F are 150-watt LDMOS FETs designed for ultra-linear CDMA power amplifier applications.


    Original     		PDF PTFA041501E PTFA041501F PTFA041501E PTFA041501F 150-watt H-36248-2 H-37248-2 IS-95

    PTFA041501E

    Abstract: BCP56 LM7805 PTFA041501F R250 IM335 resistor 33k ohms
    Text: PTFA041501E PTFA041501F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 150 W, 420 – 500 MHz Description The PTFA041501E and PTFA041501F are 150-watt LDMOS FETs designed for ultra-linear CDMA power amplifier applications.


    Original     		PDF PTFA041501E PTFA041501F PTFA041501E PTFA041501F 150-watt H-36248-2 H-37248-2 IS-95 BCP56 LM7805 R250 IM335 resistor 33k ohms

    ULTRA THIN CARD EDGE CONNECTOR OF SERIES 235

    Abstract: 245-21-XXXCE-XX m42x M42X-03-XXX-X 275-00-XXXDSX-XX methode board edge connectors usa lead
    Text: .050" 1.27mm Series 235 Ultra Thin Card Edge Connector DIP SOLDER TERMINALS WITHOUT MOUNTING EARS PART NUMBER LEGEND 235-21-XXXDS-XX PLATING OPTIONS 01 = .000010 GOLD IN CONTACT AREA OVER NICKEL WITH GOLD FLASH TAILS. 03 = .000030 GOLD IN CONTACT AREA OVER NICKEL WITH


    Original     		PDF 235-21-XXXDS-XX ULTRA THIN CARD EDGE CONNECTOR OF SERIES 235 245-21-XXXCE-XX m42x M42X-03-XXX-X 275-00-XXXDSX-XX methode board edge connectors usa lead

    SCHB

    Abstract: No abstract text available
    Text: TECHNICAL DATA COAXIAL CONNECTORS FLANGE RECEPTACLE FOR .011 DIA WITH SPECIAL GASKET EMI 0 .2 9 7 * .0 0 2 7 ,5 5 * 0 .0 5 R125.941.000 Series : SMA 1 IS: 012 .061 Œ I Page Is s u e : 0746 A '(1.55: CL cu O -—. ÍD O o *£ s 1—( a a> C—Í -p rK CD -ft


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: /T T SCS-THOMSON SGSP316 SGSP317 “ TÆ . s s o m m i C T i M « N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE VDSs ^DS on 'd SGSP316 SGSP317 250 V 200 V 1.2 fl 0.75 fi 5A 6A • HIGH SPEED SWITCHING APPLICATIONS • ULTRA FAST SWITCHING • RATED FOR UNCLAMPED INDUCTIVE


    OCR Scan     		PDF SGSP316 SGSP317

    Untitled

    Abstract: No abstract text available
    Text: bq3287E/bq3287EA fe j BENCHMARQ Real-Time Clock RTC Module Features >• Direct clock/calendar replacement for IBfti AT-compatible computers and other applications >• Functionally compatible with the DS1287/DS1287A and MC146818A/MC146818B >• 242 bytes of general nonvolatile


    OCR Scan     		PDF bq3287E/bq3287EA DS1287/DS1287A MC146818A/MC146818B 768kHz D003M74 bq3287E 137flfln 000347S

    Untitled

    Abstract: No abstract text available
    Text: 1994 SHORTFORM CATALOG SENSITRON SEMICONDUCTOR MECHANICAL DIMENSIONS FOR BRIDGE RECTIFIERS /469 REV.- DIMENSIONS MM INCHES LETTER MAX MIN MIN MAX C1 .367 .375 9.32 9.53 C2 .350 .450 8.89 11.43 C3 .175 .225 4.45 5.72 4>D 1 .139 .149 3.53 3.78 2.57 4>D2 .091


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Product specification Philips Semiconductors BUK107-50GL PowerMOS transistor Logic level TOPFET For maintenance only. Do not use for design-in. DESCRIPTION Monolithic overload protected logic level power MOSFET in a surface mount plastic envelope, intended as


    OCR Scan     		PDF BUK107-50GL

    Untitled

    Abstract: No abstract text available
    Text: cnr S6E SEMTECH CORP D 5 m 613^13^ 0DG322M Tb? « S E T 30 AMP, 400 WATT POSITIVE HYBRID VOLTAGE REGULATORS ABSOLUTE MAXIMUM RATINGS PARAMETER In p u t Voltage In p u t-O u tp u t V oltage D iffe re ntia l P ow er D is s ip a tio n 1 SYM BOL MAXIMUM UNITS


    OCR Scan     		PDF 0DG322M DD0322Ã

    b15n06v

    Abstract: No abstract text available
    Text: M OTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r ’s Data Sheet MTB15N06V TMOS V™ Power Field Effect Transistor D2PAK for Surface Mount TMOS POWER FET 15 AMPERES 60 VOLTS RDS on = 0.12 OHM N-Channel Enhancement-Mode Silicon Gate TMOS V is a new technology designed to achieve an orv-resistance


    OCR Scan     		PDF QE-05 0E-04 b15n06v

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r ’s D ata S heet TM O S V P o w er Field E ffe c t T ran sisto r N-Channel Enhancement-Mode Silicon Gate TMOS V is a new technology designed to achieve an on-resistance area product about o n e-ha lf that of standard MOSFETs. This


    OCR Scan     		PDF

    OF IC 723 linear regulator

    Abstract: No abstract text available
    Text: SG723/SG723C -—. _ . 5 |U Ç D N LINEAR INTEGRATED CIRCUITS PRECISION VOLTAGE REGULATOR FEATURES DESCRIPTION This monolithic voltage regulator is designed for use with either positive or negative supplies as a series, shunt, switching, or floating regulator


    OCR Scan     		PDF SG723/SG723C 150mA. SG723 SG723C OF IC 723 linear regulator

    74LS205

    Abstract: No abstract text available
    Text: / 'K -v 1 DESCRIPTION The MN5500 is a 12 Bit A/D Converter designed specifically for microprocessor applications. Internal circuitry is sup­ plied for chip select, address decoding, and the other inter­ face signals required by popular microprocessors. In most


    OCR Scan     		PDF MN5500 conver02 MN2020 74LS175 74LS00 74LS02 74LS04 74LS20 74LS205