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Catalog Datasheet	MFG & Type	PDF	Document Tags
RF5516 Abstract: QFN "200 pin" PACKAGE 802.11a Amplifier 802.11a Text: RF5516 Proposed HIGH-BAND FRONT END MODULE RoHS Compliant & Pb-Free Product Package Style: QFN, 16-pin, 3.0mmx3.0mmx0.5mm GND 2 HB TX GND 14 13 GND 11 ANT 3 10 GND 4 9 PDET LNA SP2T 6 7 8 VDD3 5 VDD2 PA VDD1 IEEE802.11a WLAN Applications 5GHz ISM Band Applications	Original	PDF	RF5516 16-pin, IEEE802 16dBm, RF5516 DS090115 QFN "200 pin" PACKAGE 802.11a Amplifier 802.11a
P 9806 AD Abstract: No abstract text available Text: FPD2000AS FPD2000AS 2W Packaged Power pHEMT 2W PACKAGED POWER pHEMT RoHS Compliant and Pb-Free Package: 4.4mmx3.8mm Product Description Features The FPD2000AS is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , optimized for power	Original	PDF	FPD2000AS FPD2000AS 33dBm 46dBm 880MHz) EB-2000AS-AB 85GHz) EB-2000AS-AA P 9806 AD

Catalog Datasheet

MFG & Type

PDF

Document Tags

RF5516

Abstract: QFN "200 pin" PACKAGE 802.11a Amplifier 802.11a
Text: RF5516 Proposed HIGH-BAND FRONT END MODULE RoHS Compliant & Pb-Free Product Package Style: QFN, 16-pin, 3.0mmx3.0mmx0.5mm GND 2 HB TX GND 14 13 GND 11 ANT 3 10 GND 4 9 PDET LNA SP2T 6 7 8 VDD3 5 VDD2 PA VDD1 IEEE802.11a WLAN Applications 5GHz ISM Band Applications

Original

PDF

RF5516 16-pin, IEEE802 16dBm, RF5516 DS090115 QFN "200 pin" PACKAGE 802.11a Amplifier 802.11a

P 9806 AD

Abstract: No abstract text available
Text: FPD2000AS FPD2000AS 2W Packaged Power pHEMT 2W PACKAGED POWER pHEMT RoHS Compliant and Pb-Free Package: 4.4mmx3.8mm Product Description Features The FPD2000AS is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , optimized for power

Original

PDF

FPD2000AS FPD2000AS 33dBm 46dBm 880MHz) EB-2000AS-AB 85GHz) EB-2000AS-AA P 9806 AD