Untitled
Abstract: No abstract text available
Text: RF3024 RF3024 BROADBAND MEDIUM POWER SPDT SWITCH Package: SC70, 6-Pin Product Description Features The RF3024 is a GaAs pHEMT single-pole double-throw SPDT switch designed for general purpose switching applications which require very low insertion loss, moderate isolation, and medium power handling capability. The RF3024 is ideally suited for battery-powered and low control
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RF3024
RF3024
10MHz
28dBm
18dBm
915MHz)
1980MHz)
DS100118
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SCHEMATIC DIAGRAM OF 2.4 GHZ WIFI RF POWER
Abstract: RF5521 wifi schematic
Text: RF5521 3.3V, SWITCH AND LNA FRONT END MODULE Package Style: QFN, 10-pin, 1.75mmx1.75mmx0.5mm C_B T 10 Features Single Supply Voltage 3.0V to 4.5V Integrated SP3T Switch and LNA with Bypass Typical gain is 12dB and 2.0dB NF in RX Mode Pin-toPin
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RF5521
10-pin,
75mmx1
75mmx0
IEEE802
11b/g/n
RF5521
RF5521:
DS100118
SCHEMATIC DIAGRAM OF 2.4 GHZ WIFI RF POWER
wifi schematic
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32N30
Abstract: No abstract text available
Text: Preliminary Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor VCES = 3000V IC110 = 32A VCE sat ≤ 3.2V IXBH32N300 IXBT32N300 TO-247 (IXBH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 3000 V VCGR
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IC110
IXBH32N300
IXBT32N300
O-247
32N300
32N30
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IXBH32N300
Abstract: B32N 32N30 IXBT32N300 32N300
Text: Preliminary Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH32N300 IXBT32N300 VCES = 3000V IC110 = 32A VCE sat ≤ 3.2V TO-247 (IXBH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 3000 V VCGR
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PDF
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IXBH32N300
IXBT32N300
IC110
O-247
32N300
IXBH32N300
B32N
32N30
IXBT32N300
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