RF2472G
Abstract: sot23-5 amplifier p12
Text: RF2472G RF2472G 2.4GHz Low Noise Amplifier with Enable 2.4GHz LOW NOISE AMPLIFIER WITH ENABLE Package Style: SOT 5 Lead Features DC to >6GHz Operation 2.7V to 4.0V Single Supply High Input IP3 1.5dB Noise Figure at 2400MHz 14dB Gain at 2400MHz
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RF2472G
2400MHz
RF2472G
2002/95/EC
DS100126
sot23-5 amplifier p12
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information GenX3TM 1200V IGBT VCES = 1200V IC90 = 20A VCE sat ≤ 3.1V IXGA20N120B3 IXGP20N120B3 High Speed Low Vsat PT IGBTs 3-20 kHz Switching TO-263 (IXGA) Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ
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IXGA20N120B3
IXGP20N120B3
O-263
20N120B3
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IXGP20N120B3
Abstract: IXGP20N120B IXGA20N120B3 IXGA20N120B
Text: Preliminary Technical Information VCES = 1200V IC90 = 20A VCE sat ≤ 3.1V IXGA20N120B3 IXGP20N120B3 GenX3TM 1200V IGBT High Speed Low Vsat PT IGBTs 3-20 kHz Switching TO-263 (IXGA) Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ
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IXGA20N120B3
IXGP20N120B3
O-263
20N120B3
IXGP20N120B3
IXGP20N120B
IXGA20N120B3
IXGA20N120B
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si 4422
Abstract: FPD1500DFN FPD750DFN FPD750SOT89 Z624 Z5 1512
Text: FPD750DFN FPD750DFN Low Noise High Linearity Power pHEMT LOW NOISE HIGH LINEARITY POWER pHEMT NOT FOR NEW DESIGNS Package: 2mmx2mm DFN Product Description Features Optimum Technology Matching Applied GaAs HBT 24dBm Output Power P1dB at 1.85GHz
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FPD750DFN
24dBm
85GHz
39dBm
FPD750DFN
mx750
EB750DFN-BC
si 4422
FPD1500DFN
FPD750SOT89
Z624
Z5 1512
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Untitled
Abstract: No abstract text available
Text: FPD750DFN FPD750DFN Low Noise High Linearity Power pHEMT LOW NOISE HIGH LINEARITY POWER pHEMT NOT FOR NEW DESIGNS Package: 2mmx2mm DFN Product Description Features The FPD750DFN is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It utilizes a
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FPD750DFN
FPD750DFN
mx750Â
EB750DFN-BC
FPD750DFNSR
FPD750DFNSQ
DS100126
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