54AC20
Abstract: 74AC AC20 E20A J14A
Text: 54AC20 Dual 4-Input NAND Gate General Description The ’AC20 contains four 4-input NAND gates. n Outputs source/sink 24 mA n Standard Military Drawing SMD n ’AC20: 5962-87613 Features n ICC reduced by 50% Logic Symbol IEEE/IEC DS100264-1 Pin Names Description
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54AC20
DS100264-1
DS100264-3
DS100264-2
DS100264
54AC20
74AC
AC20
E20A
J14A
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MMIX1G320N60B3
Abstract: 320N60B3 siemens ic igbt 300V 400A
Text: Advance Technical Information MMIX1G320N60B3 GenX3TM 600V IGBT VCES = 600V IC25 = 400A VCE sat ≤ 1.50V Medium-Speed Low-Vsat PT IGBTs for 5-40 kHz Switching C G E Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ
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MMIX1G320N60B3
IC110
320N60B3
MMIX1G320N60B3
siemens ic
igbt 300V 400A
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Untitled
Abstract: No abstract text available
Text: 54AC20 54AC20 Dual 4-Input NAND Gate Literature Number: SNOS083 54AC20 Dual 4-Input NAND Gate General Description The ’AC20 contains four 4-input NAND gates. n Outputs source/sink 24 mA n Standard Military Drawing SMD n ’AC20: 5962-87613 Features n ICC reduced by 50%
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Original
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54AC20
54AC20
SNOS083
DS100264-1
DS100264-3
DS100264-2
DS100264
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PDF
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information GenX3TM 600V IGBT MMIX1G320N60B3 Electrically Isolated Tab VCES = 600V IC25 = 400A VCE(sat) ≤ 1.50V Medium-Speed Low-Vsat PT IGBT for 5-40 kHz Switching C G E Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C
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Original
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MMIX1G320N60B3
IC110
320N60B3
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PDF
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information MMIX1G320N60B3 GenX3TM 600V IGBT Electrically Isolated Tab VCES = 600V IC25 = 400A VCE(sat) ≤ 1.50V Medium-Speed Low-Vsat PT IGBT for 5-40 kHz Switching C G E Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C
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Original
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MMIX1G320N60B3
IC110
320N60B3
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PDF
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