RF1131
Abstract: DS100406
Text: RF1131 BROADBAND HIGH POWER SP3T SWITCH Package Style: QFN, 12-pin, 2mmx2mm Features Broadband Performance Low Frequency - 2.5GHz Very Low Insertion Loss 0.30dB Typ at 0.90GHz 0.45dB Typ at 1.90GHz High Isolation: 31dB Typ at 1.90GHz P0.1dB>35dBm
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RF1131
12-pin,
90GHz
35dBm
12-pin
IEEE802
11b/g
RF1131
DS100406
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Untitled
Abstract: No abstract text available
Text: IXYR100N120C3 1200V XPTTM IGBT GenX3TM VCES IC110 VCE sat tfi(typ) (Electrically Isolated Tab) = = ≤ = 1200V 58A 3.5V 110ns High-Speed IGBT for 20-50 kHz Switching ISOPLUS247TM Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ
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IXYR100N120C3
IC110
110ns
ISOPLUS247TM
100N120C3
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information 1200V XPTTM IGBT GenX3TM VCES IC110 VCE sat tfi(typ) IXYR100N120C3 (Electrically Isolated Tab) = = ≤ = 1200V 58A 3.5V 110ns High-Speed IGBT for 20-50 kHz Switching ISOPLUS247TM Symbol Test Conditions Maximum Ratings VCES
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Original
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PDF
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IC110
IXYR100N120C3
110ns
ISOPLUS247TM
100N120C3
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100N120C3
Abstract: No abstract text available
Text: Preliminary Technical Information IXYR100N120C3 1200V XPTTM IGBT GenX3TM VCES IC110 VCE sat tfi(typ) (Electrically Isolated Tab) = = ≤ = 1200V 58A 3.5V 110ns High-Speed IGBT for 20-50 kHz Switching ISOPLUS247TM Symbol Test Conditions Maximum Ratings VCES
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Original
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PDF
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IXYR100N120C3
IC110
110ns
ISOPLUS247TM
100N120C3
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RF3230
Abstract: 3g UMTS signal Schematic Diagram LOG RX1 DCS1800 EGSM900 GSM900 PCS1900 transistor for power amplifier freq umts PCL 86
Text: RF3230 QUAD-BAND GMSK TXM, 2 UMTS SWITCH PORTS GND GND GND GND GND GND HB RFIN 1 GND Package Style: Module, 7.00mmx6.00mmx1.00mm 30 29 28 27 26 25 24 GND 2 Applications Battery Powered 3G Handsets GSM850/EGSM900/DCS/ PCS Products
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RF3230
00mmx6
00mmx1
GSM850/EGSM900/DCS/
EIA-481.
DS100406
RF3230
3g UMTS signal Schematic Diagram
LOG RX1
DCS1800
EGSM900
GSM900
PCS1900
transistor for power amplifier freq umts
PCL 86
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100N120C3
Abstract: No abstract text available
Text: Advance Technical Information IXYR100N120C3 1200V XPTTM IGBT GenX3TM VCES IC110 VCE sat tfi(typ) (Electrically Isolated Tab) = = ≤ = 1200V 58A 3.5V 110ns High-Speed IGBT for 20-50 kHz Switching ISOPLUS247TM Symbol Test Conditions Maximum Ratings VCES VCGR
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Original
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PDF
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IXYR100N120C3
IC110
110ns
ISOPLUS247TM
100N120C3
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