trace code marking RFMD
Abstract: SBB-2089 SBB2089Z SBB-2089Z SBB2089 rfmd mmic MARKING RFMD bb2z marking amplifier mmic marking bb2z
Text: SBB-2089Z SBB-2089Z 50 MHz to 850 MHz, Cascadable Active Bias InGaP HBT MMIC Amplifier 50 MHz to 850 MHz, CASCADABLE ACTIVE BIAS InGaP HBT MMIC AMPLIFIER Package: SOT-89 Product Description Features RFMD’s SBB-2089Z is a high performance InGaP HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active
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SBB-2089Z
OT-89
SBB-2089Z
DS100601
SBB2089Z"
trace code marking RFMD
SBB-2089
SBB2089Z
SBB2089
rfmd mmic
MARKING RFMD
bb2z marking amplifier
mmic marking bb2z
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBF28N300 VCES = 3000V IC90 = 28A VCE sat 2.7V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TJ VCGR TJ = 25°C to 150°C, RGE = 1M
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IXBF28N300
100ms
28N300
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Untitled
Abstract: No abstract text available
Text: FPD7612 FPD7612General Purpose pHEMT GENERAL PURPOSE pHEMT Package Style: Bare Die Product Description Features The FPD7612 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , featuring a 0.25mx200m Schottky barrier gate, defined by high-resolution stepper-based photolithography. The recessed
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FPD7612
FPD7612General
FPD7612
mx200ï
12GHz
18GHz
22-A114.
MIL-STD-1686
MIL-HDBK-263.
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FPD200P70
Abstract: No abstract text available
Text: FPD200P70 FPD200P70 High Frequency Packaged pHEMT HIGH FREQUENCY PACKAGED pHEMT Package: P70 Product Description Features The FPD200P70 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It utilizes a 0.25mmx200mm Schottky barrier gate, defined by high-resolution stepper-based photolithography.
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FPD200P70
FPD200P70
25mmx200mm
26GHz
20dBm
15GHz
EB200P70-AJ
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RF SWITCH QFN-12pin
Abstract: RF1236
Text: RF1236 BROADBAND MEDIUM POWER DIFFERENTIAL SP3T SWITCH Package Style: QFN, 12-Pin, 2.0mmx2.0mmx0.55mm RF1_P Features Broadband Frequency Performance Low Frequency - 4GHz Very Low Insertion Loss: 0.25dB Typ at 0.90GHz 0.6dB Typ at 1.90GHz
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RF1236
12-Pin,
90GHz
109dBm
16dBm
105dBm
RF SWITCH QFN-12pin
RF1236
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fpd200p70
Abstract: w65 transistor FPD200P70SR TL11 TL22 "IPC 1752" gold 8GH transistor L30 type RF microwave power transistor FPD200P70SB 3400 transistor
Text: FPD200P70 FPD200P70 High Frequency Packaged pHEMT HIGH FREQUENCY PACKAGED pHEMT Package: P70 Product Description Features The FPD200P70 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It utilizes a 0.25mmx200mm Schottky barrier gate, defined by high-resolution stepper-based photolithography.
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FPD200P70
FPD200P70
25mmx200mm
26GHz
20dBm
15GHz
EB200P70-AJ
w65 transistor
FPD200P70SR
TL11
TL22
"IPC 1752" gold
8GH transistor
L30 type RF microwave power transistor
FPD200P70SB
3400 transistor
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AlGaAs resistivity
Abstract: fpd7612-000s3 FPD7612 RFMD FPD7612 MIL-HDBK-263 InP transistor HEMT TRANSISTOR 841 DS100601
Text: FPD7612 FPD7612General Purpose pHEMT GENERAL PURPOSE pHEMT Package Style: Bare Die Product Description Features The FPD7612 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , featuring a 0.25mx200m Schottky barrier gate, defined by high-resolution stepper-based photolithography. The recessed
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FPD7612
FPD7612General
FPD7612
25mx200m
12GHz
18GHz
22-A114.
MIL-STD-1686
MIL-HDBK-263.
AlGaAs resistivity
fpd7612-000s3
FPD7612 RFMD
MIL-HDBK-263
InP transistor HEMT
TRANSISTOR 841
DS100601
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