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    Ningbo connfly electronic CO LTD DS1105-BBN02

    Connector: USB mini Hirose; plug; soldering; PIN: 4; nickel plated
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    TME DS1105-BBN02 101 2
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    DS1105 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    DS1105 International Semiconductor SURFACE MOUNT DIODE DIP ARRAYS Scan PDF

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    Catalog Datasheet MFG & Type PDF Document Tags

    DS110505

    Abstract: RFPA3800 SCHEMATIC circuit high frequency POWER SUPPLY ind output 7.5v DC Power Jack Application of tuned amplifier gsm transceiver power amplifier circuit diagram schematic diagram of bluetooth s9 RFMD PA LTE 920MHz
    Text: RFPA3800 RFPA3800 GaAs HBT 150 MHz to 960MHz Power Amplifier GaAs HBT 150MHz TO 960MHz POWER AMPLIFIER Package: SOIC-8 Features  5W Output Power P1dB  High Linearity: OIP3>48dBm  High Efficiency  Low Noise: NF=4dB at 945MHz  5V to 7V Operation


    Original     		PDF RFPA3800 960MHz 150MHz 960MHz 48dBm 945MHz RFPA3800 DS110505 DS110505 SCHEMATIC circuit high frequency POWER SUPPLY ind output 7.5v DC Power Jack Application of tuned amplifier gsm transceiver power amplifier circuit diagram schematic diagram of bluetooth s9 RFMD PA LTE 920MHz

    Untitled

    Abstract: No abstract text available
    Text: RF3931D 30W GaN ON SiC POWER AMPLIFIER DIE Package: Die Features     Broadband Operation DC4GHz Advanced GaN HEMT Technology Packaged Small Signal Gain=14dB at 2GHz 48V Typical Packaged Performance RF OUT VD RF IN VG •Output Power 50W at P3dB


    Original     		PDF RF3931D 96mmx1 33mmx0 DS110520

    Untitled

    Abstract: No abstract text available
    Text: RF2483 RF2483Low Noise DualBand Quadrature Modulator with AGC LOW NOISE DUAL-BAND QUADRATURE MODULATOR WITH AGC       RF OUT LB GC Mode Control & Biasing VCC2 2 * 15 GC DEC Power Control 14 VREF  ISIG P 3 13 QSIG P ISIG N 4 12 QSIG N +45°


    Original     		PDF RF2483 RF2483Low 2700MHz -156dBm/Hz 20MHz 19dBm 2002/95/EC DS110505

    Untitled

    Abstract: No abstract text available
    Text: RF5570 RF5570 11b/g/n WiFi SP3T Switch 11b/g/n WiFi SP3T SWITCH Package: DFN, 8-Pin, 2.0mmx2.0mmx0.6mm Features    SP3T Switch Switch Control Voltage 2.5V to 5V Low Insertion Loss 0.6dB ANT 1 8 N/C 2 7 VRF3 VRF1 3 6 VRF2 RF3 Applications   EEE802.11b/g/n WiFi Applications


    Original     		PDF RF5570 11b/g/n EEE802 RF5570 RF5570: DS110527

    Untitled

    Abstract: No abstract text available
    Text: RF3934D RF3934D 120W GaN on SiC Power Amplifier Die 120W GaN ON SIC POWER AMPLIFIER DIE Package: Die RF OUT VD Features  Broadband Operation DC-4GHz  Advanced GaN HEMT Technology  Packaged Small Signal Gain=13dB at 2GHz  48V Typical Packaged Performance


    Original     		PDF RF3934D 96mmx4 57mmx0 DS110520

    schematic diagram power amplifier free

    Abstract: GRM155R61A105
    Text: RFVA2017 RFVA2017Analog Controlled Variable Gain Amplifier ANALOG CONTROLLED VARIABLE GAIN AMPLIFIER Package: MCM, 7mmx7mm VCTRL 8 Features Applications     Cellular, 3G and 4G Infrastructure WiBro, WiMax, LTE Microwave Radio High Linearity Power Control


    Original     		PDF RFVA2017Analog RFVA2017 RFVA2017 DS110520 schematic diagram power amplifier free GRM155R61A105

    SA2013-410

    Abstract: rfsa2023 RFSA2023PCK-410 MICROWAVE BJT 2GHZ sa2013 Emerson 142-0741-851
    Text: RFSA2023 RFSA2023 Voltage Controlled Attenuator VOLTAGE CONTROLLED ATTENUATOR Features Broadband 50MHz to 4000MHz Frequency Range 30dB Attenuation Range  +50dBm IIP3 Typical  +80dBm IIP2 Typical 12 GND 11 NC VDD VC GND 10 RFOUT 4 9 7 NC 8 GND 6 GND 3.3V Power Supply


    Original     		PDF RFSA2023 RFSA2023 16-Pin, 50MHz 4000MHz 50dBm 80dBm 30dBm Pr/16SJPTH DS110523 SA2013-410 RFSA2023PCK-410 MICROWAVE BJT 2GHZ sa2013 Emerson 142-0741-851

    Untitled

    Abstract: No abstract text available
    Text: RF3932D 60W GaN ON SiC POWER AMPLIFIER DIE Package: Die Features     RF OUT VD Broadband Operation DC to 4GHz Advanced GaN HEMT Technology Packaged Small Signal Gain=14dB at 2GHz 48V Typical Packaged Performance RF IN VG • Output Power 75W at P3dB


    Original     		PDF RF3932D 96mmx1 92mmx0 RF3932D DS110520

    st micro trace date code

    Abstract: No abstract text available
    Text: RFDA2046 RFDA2046Digital Controlled Variable Gain Amplifier 2000MHz to 2800MHz DIGITAL CONTROLLED VARIABLE GAIN AMPLIFIER 2000MHz TO 2800MHz GND GND GND GND GND NC 27 26 25 24 23 22 SPI_CLK 3 19 GND PUP 4 18 GND 17 GND 16 RF_OUT 15 GND DSA AMP2 6 GND 7 Gain Control Range=31.5dB


    Original     		PDF RFDA2046Digital 2000MHz 2800MHz RFDA2046 28-Pin, 2800MHz 41dBm/ st micro trace date code

    RFSA2013TR13

    Abstract: RMC1/16S-101JTH
    Text: RFSA2013 RFSA2013 Voltage Controlled Attenuator VOLTAGE CONTROLLED ATTENUATOR Features Broadband 50MHz to 4000MHz Frequency Range 30dB Attenuation Range  +50dBm IIP3 Typical  +80dBm IIP2 Typical NC 4 12 GND 11 NC VDD VC GND 10 RFOUT 9 7 NC 8 GND 6 GND


    Original     		PDF RFSA2013 50MHz 4000MHz 50dBm 80dBm 30dBm 16-Pin, DS110523 RFSA2013TR13 RMC1/16S-101JTH

    NDK ENA3523A

    Abstract: ENA3523A NDK ENA3560A
    Text: RFMD2081 45MHz to 2700MHz IQ MODULATOR WITH SYNTHESIZER/VCO RFMD2081 Preliminary 45MHz TO 2700MHz IQ MODULATOR WITH SYNTHESIZER/VCO Package: QFN, 32-Pin, 5mm x 5mm Features         RF Output Frequency Range 45MHz to 2700MHz Fractional-N Synthesizer with


    Original     		PDF RFMD2081 45MHz 2700MHz 32-Pin, 2700MHz -40dBc NDK ENA3523A ENA3523A NDK ENA3560A

    Untitled

    Abstract: No abstract text available
    Text: RF3932D 60W GaN ON SiC POWER AMPLIFIER DIE Package: Die Features     RF OUT VD Broadband Operation DC to 4GHz Advanced GaN HEMT Technology Packaged Small Signal Gain=14dB at 2GHz 48V Typical Packaged Performance RF IN VG • Output Power 75W at P3dB


    Original     		PDF RF3932D 96mmx1 92mmx0 DS110520

    RFSW2042DC

    Abstract: No abstract text available
    Text: RFSW2042 RFSW2042DC TO 15GHz SP3T PHEMT GaAs SWITCH DC TO 15GHz SP3T PHEMT GaAs SWITCH Package: QFN, 16-pin, 0.8mmx4mmx4mm GND 6 Features  Low Insertion Loss: 2.1dB at 15GHz  High Isolation: 37dB at 15GHz  Excellent Return Loss  21nS Switching Speed


    Original     		PDF RFSW2042DC 15GHz RFSW2042 16-pin, RFSW2042 DS110531

    Untitled

    Abstract: No abstract text available
    Text: RF7176D RF7176DDualBand TX/DualBand RX GSM/GPRS DUAL-BAND TX/DUAL-BAND RX GSM/GPRS TRANSMIT MODULE Integrated VBATT Tracking Circuit  8kV Robust ESD Protection at Antenna Port  No External Routing  Low RX Insertion Loss  Symmetrical RX Ports 


    Original     		PDF RF7176D RF7176DDualBand EGSM900 DCS18, DS110503

    RF7176

    Abstract: GPRS CIRCUIT DIAGRAM GSM module circuit diagram RF7176D Bluetooth circuit Rx
    Text: RF7176D RF7176DDualBand TX/DualBand RX GSM/GPRS DUAL-BAND TX/DUAL-BAND RX GSM/GPRS TRANSMIT MODULE No External Routing  Low RX Insertion Loss  Symmetrical RX Ports      GPCTRL0 GPCTRL1 VBATT NC CMOS Controller 16 GND RFIN HB 3 15 GND GND 4


    Original     		PDF RF7176DDualBand RF7176D 63mmx5 24mmx1 EGSM900 DCS1800 DS110503 RF7176 GPRS CIRCUIT DIAGRAM GSM module circuit diagram RF7176D Bluetooth circuit Rx

    KEYFOB

    Abstract: block diagram for FM radio transmitter AND RECEIVER TX RX FM transmitter 433.92 433a 110C2-433A keeloq rx decoder HiRK-433A 110c3-433a AM-433 AM-433MHz
    Text: AM / FM RADIO TRANSMITTER KEYFOBS • • • • • • • • • Highly Secure Protocol 1 – 3 Switch Options Led Indication Of Transmission Directly Compatible With Keeloq Decoder Power Saving Auto Shut Off Feature Automatically Transmits Battery Low Condition.


    Original     		PDF AM-315MHz AM-433MHz FM-433MHz DS110-5 KEYFOB block diagram for FM radio transmitter AND RECEIVER TX RX FM transmitter 433.92 433a 110C2-433A keeloq rx decoder HiRK-433A 110c3-433a AM-433

    Untitled

    Abstract: No abstract text available
    Text: RFVC1829 RFVC1829Low Noise MMIC VCO with Buffer Amplifier LOW NOISE MMIC VCO WITH BUFFER AMPLIFIER Package: QFN, 24 Pin, 4mm x 4mm Features       6.8 to 7.4GHz Operation -103dBc/Hz Phase Noise @ 100KHz offset +12.0dBm POUT No external resonator or


    Original     		PDF RFVC1829 RFVC1829Low -103dBc/Hz 100KHz RFVC1829 DS110503

    SBB5089Z

    Abstract: SBB-5089Z BB5Z SBB5089ZSQ 0805CS DS110505 trace code marking RFMD
    Text: SBB5089Z SBB5089Z 50MHz to 6000MHz, Cascadable Active Bias InGaP HBT MMIC Amplifier 50MHz to 6000MHz, CASCADABLE ACTIVE BIAS InGaP HBT MMIC AMPLIFIER Package: SOT-89 Product Description Features RFMD’s SBB5089Z is a high performance InGaP HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active


    Original     		PDF SBB5089Z 50MHz 6000MHz, OT-89 SBB5089Z SBB-5089Z BB5Z SBB5089ZSQ 0805CS DS110505 trace code marking RFMD

    Untitled

    Abstract: No abstract text available
    Text: RF3933D RF3933D90 W GaN on SiC Power Amplifier Die 90W GaN ON SiC POWER AMPLIFIER DIE Package: Die Features  Broadband Operation DC to 4GHz  Advanced GaN HEMT Technology  Packaged Small Signal Gain=14dB at 2GHz  48V Typical Packaged Performance


    Original     		PDF RF3933D RF3933D90 96mmx2 52mmx0 RF3933D DS110520

    NDK ENA3523A

    Abstract: ENA3560A ENA3523A NDK ENA3560A RFMD2080SR Synthesizer VCO 250 to 1300MHz 52MHZ NDK RFMD2080SQ rfmd2080 ndk crystal oscillator 1400
    Text: RFMD2080 45 MHz to 2700MHz IQ MODULATOR WITH RFMD2080 Preliminary 45MHz TO 2700MHz IQ MODULATOR WITH SYNTHESIZER/VCO & BASEBAND INTERFACE Package: QFN, 32-Pin, 5mm x 5mm Features          RF Output Frequency Range 45MHz to 2700MHz


    Original     		PDF RFMD2080 2700MHz RFMD2080 45MHz 32-Pin, 10MHz -45dBc NDK ENA3523A ENA3560A ENA3523A NDK ENA3560A RFMD2080SR Synthesizer VCO 250 to 1300MHz 52MHZ NDK RFMD2080SQ ndk crystal oscillator 1400

    RF3225

    Abstract: mobile phone antenna RF3225TR polar modulation
    Text: RF3225 RF3225QuadBand GMSK POLAR EDGE QUAD-BAND GMSK POLAR EDGE POWER AMP MODULE Package: Module, 5.00 mm x 5.00 mm x 1.00 mm Features  EDGE Large Signal Polar Modulation Compatible  Power Margin for Flexible Tuning  GSM850 Efficiency: 54%  EGSM900 Efficiency: 56%


    Original     		PDF RF3225QuadBand RF3225 GSM850 EGSM900 DCS1800 PCS1900 RF3225 RF3225TR13 RF3225TR7 EIA-481. mobile phone antenna RF3225TR polar modulation

    x-Band Hemt Amplifier

    Abstract: x-band mmic X-band GaAs pHEMT MMIC Chip
    Text: FMA246 FMA246 HIGH GAIN X-BAND MMIC AMPLIFIER Package Style: Bare Die Product Description Features The FMA246 is a three-stage, reactively matched pHEMT high-gain MMIC amplifier designed for use over 8GHz to 14GHz. The supply voltage can be varied from +3V


    Original     		PDF FMA246 FMA246 14GHz. FMA246-000 FMA246-000SQ FMA246-000S3 DS110503 x-Band Hemt Amplifier x-band mmic X-band GaAs pHEMT MMIC Chip

    GMSK applications

    Abstract: RF3194
    Text: RF3194 RF3194QuadBand GMSK power amp module QUAD-BAND GMSK POWER AMP MODULE Package: Module, 5.00mmx5.00mmx1.00mm Features  Power Margin for Flexible Tuning  GSM850 Efficiency: 54%  EGSM900 Efficiency: 56%  DCS1800 Efficiency: 49%  PCS1900 Efficiency: 51%


    Original     		PDF RF3194QuadBand RF3194 00mmx5 00mmx1 GSM850 EGSM900 DCS1800 PCS1900 RF3194 RF3194TR13 GMSK applications

    bifet differential

    Abstract: PHEMT* Noise Amplifier with Bypass Switch
    Text: RF6555 Preliminary 3.3V, 2.4GHz FRONT END MODULE Package Style: QFN, 24-Pin Laminate 5mmx5mmx1mm Features   TX Output Power=18dBm TX Gain: 25dB Applications   ZigBee 802.15.4 Based Systems for Remote Monitoring and Control WLAN 802.11b/g Functional Block Diagram


    Original     		PDF RF6555 24-Pin 18dBm 11b/g RF6555 50strip 50strip bifet differential PHEMT* Noise Amplifier with Bypass Switch