Untitled
Abstract: No abstract text available
Text: RFHA1101D Proposed 4.3W GaN ON SiC POWER AMPLIFIER DIE Package: Die Features Broadband Operation DC to 10GHz 1 Advanced GaN HEMT Technology Small Signal Gain=21.4dB at 2.14GHz 28V Typical Performance RF OUT VD RF IN VG • Output Power 4.3W at P3dB
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RFHA1101D
10GHz
14GHz
DS110630
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RFHA1023
Abstract: SEMICONDUCTOR J598
Text: RFHA1023 225W GaN WIDE-BAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2 Pin Features Wideband Operation: 1.2GHz to 1.4GHz Advanced GaN HEMT Technology Advanced Heat Sink Technology Optimized Evaluation Board Layout for 50: Operation
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RFHA1023
RFHA1023
DS110630
SEMICONDUCTOR J598
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Untitled
Abstract: No abstract text available
Text: RFXF4513 RFXF45131:1 SMT TRANSFORMER 1:1 SMT TRANSFORMER Package: S-20 Features Frequency Range 5MHz to 1000MHz Low Cost and RoHS Compliant Industry Standard SMT package Available in Tape-and-Reel 50 Characteristic Impedance Transmission Line
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RFXF45131
RFXF4513
1000MHz
RFXF4513
DS110630
RFXF4513SB
RFXF4513SQ
RFXF4513SR
RFXF4513TR13
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Untitled
Abstract: No abstract text available
Text: RFXF4513 RFXF45131:1 SMT TRANSFORMER 1:1 SMT TRANSFORMER Package: S-20 Features Frequency Range 5MHz to 1000MHz Low Cost and RoHS Compliant Industry Standard SMT package Available in Tape-and-Reel 50 Characteristic Impedance Transmission Line
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PDF
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RFXF4513
RFXF45131
1000MHz
RFXF4513
DS110630
RFXF4513SB
1000MHz
RFXF4513SQ
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Untitled
Abstract: No abstract text available
Text: RFHA1101D 4.3W GaN ON SiC POWER AMPLIFIER DIE Features Broadband Operation DC to 10GHz 1 Advanced GaN HEMT Technology Small Signal Gain=21.4dB at 2.14GHz 28V Typical Performance RF OUT VD RF IN VG • Output Power 4.3W at P3dB • Drain Efficiency 60% at P3dB
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RFHA1101D
10GHz
14GHz
DS110630
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RF6535
Abstract: No abstract text available
Text: RF6535 3.3V, 2.4GHz FRONT END MODULE Package Style: QFN, 20-Pin, 3.5mmx3.5mmx0.5mm Applications ZigBee 802.15.4 Based Systems for Remote Monitoring and Control WiFi 802.11b/g VCC_BAIS VCC NC 13 12 11 TXN 16 10 VCC TXP 17 9 GND RXCT 18 8 ANT1
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RF6535
20-Pin,
23dBm
11b/g
RF6535
DS110630
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Untitled
Abstract: No abstract text available
Text: RFHA1101 Proposed 4.3W GaN ON SiC POWER AMPLIFIER DIE-ON-CARRIER Package: Die Features Broadband Operation DC to 10GHz 1 Advanced GaN HEMT Technology Small Signal Gain=21.4dB at 2.14GHz 28V Typical Performance RF OUT VD RF IN VG • Output Power 4.3W at P3dB
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RFHA1101
10GHz
14GHz
DS110630
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M1DGAN202
Abstract: No abstract text available
Text: RFHA1101D 4.3W GaN ON SiC POWER AMPLIFIER DIE Features Broadband Operation DC to 10GHz 1 Advanced GaN HEMT Technology Small Signal Gain=21.4dB at 2.14GHz 28V Typical Performance RF OUT VD RF IN VG • Output Power 4.3W at P3dB • Drain Efficiency 60% at P3dB
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Original
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PDF
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RFHA1101D
10GHz
14GHz
RFHA1101D
DS110630
M1DGAN202
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