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    DS1220Y Price and Stock

    Maxim Integrated Products DS1220Y-150-

    IC NVSRAM 16KBIT PARALLEL 24EDIP
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    DigiKey DS1220Y-150- Tube 42
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    Maxim Integrated Products DS1220Y-200-

    IC NVSRAM 16KBIT PARALLEL 24EDIP
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    DigiKey DS1220Y-200- Tube 42
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    Maxim Integrated Products DS1220Y-120-

    IC NVSRAM 16KBIT PARALLEL 24DIP
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    Maxim Integrated Products DS1220Y-100-

    IC NVSRAM 16KBIT PARALLEL 24EDIP
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    DigiKey DS1220Y-100- Tube 42
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    Maxim Integrated Products DS1220Y-200IND-

    IC NVSRAM 16KBIT PARALLEL 24EDIP
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    DigiKey DS1220Y-200IND- Tube 42
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    DS1220Y Datasheets (51)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    DS1220Y Dallas Semiconductor 16k Nonvolatile SRAM Original PDF
    DS1220Y Dallas Semiconductor 16K Nonvolatile SRAM Original PDF
    DS1220Y Maxim Integrated Products 16K Nonvolatile SRAM Original PDF
    DS1220Y Dallas Semiconductor 16K Nonvolatile SRAM Scan PDF
    DS1220Y Dallas Semiconductor 16k Nonvolatile SRAM Scan PDF
    DS1220Y Dallas Semiconductor 16K Nonvolatile SRAM Scan PDF
    DS1220Y-100 Dallas Semiconductor 16K Nonvolatile SRAM Original PDF
    DS1220Y100 Maxim Integrated Products 16k Nonvolatile SRAM Original PDF
    DS1220Y-100 Maxim Integrated Products 16K Nonvolatile SRAM Original PDF
    DS1220Y-100+ Maxim Integrated Products 16K Nonvolatile SRAM Original PDF
    DS1220Y-100 Dallas Semiconductor Over 600 obsolete distributor catalogs now available on the Datasheet Archive - SRAM, Nonvolatile, 100ns, Pkg Style 24 Lead DIP Scan PDF
    DS1220Y-100-IND Dallas Semiconductor 16K Nonvolatile SRAM Original PDF
    DS1220Y100IND Maxim Integrated Products 16k Nonvolatile SRAM Original PDF
    DS1220Y-100IND Maxim Integrated Products 16k Nonvolatile SRAM Original PDF
    DS1220Y-100IND+ Maxim Integrated Products 16K Nonvolatile SRAM Original PDF
    DS1220Y-120 Dallas Semiconductor 16K Nonvolatile SRAM Original PDF
    DS1220Y120 Maxim Integrated Products 16k Nonvolatile SRAM Original PDF
    DS1220Y-120 Maxim Integrated Products 16K Nonvolatile SRAM Original PDF
    DS1220Y-120+ Maxim Integrated Products 16K Nonvolatile SRAM Original PDF
    DS1220Y-120-IND Dallas Semiconductor nvSRAM Original PDF

    DS1220Y Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CI EEPROM 2816

    Abstract: eeprom 2816 DS1220Y-200IND 2716 IC DATA SHEET 2816 eeprom how to read Maxim date code DS1220Y DS1220Y-100 DS1220Y-100IND DS1220Y-120
    Text: Not Recommended for New Design DS1220Y 16k Nonvolatile SRAM www.maxim-ic.com FEATURES § § § § § § § § § PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 2k x 8 volatile static RAM


    Original     		PDF DS1220Y 24-pin 100ns 120ns 150ns CI EEPROM 2816 eeprom 2816 DS1220Y-200IND 2716 IC DATA SHEET 2816 eeprom how to read Maxim date code DS1220Y DS1220Y-100 DS1220Y-100IND DS1220Y-120

    2816 eeprom

    Abstract: EEPROM 2816 CMOS DS1220Y DS1220Y-100 DS1220Y-120 DS1220Y-150 DS1220Y-200 CI EEPROM 2816
    Text: Not Recommended for New Design DS1220Y 16k Nonvolatile SRAM www.maxim-ic.com FEATURES § § § § § § § § § PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 2k x 8 volatile static RAM


    Original     		PDF DS1220Y 24-pin 24-ONS 100pF DS1220Y 720-MIL 24-PIN 2816 eeprom EEPROM 2816 CMOS DS1220Y-100 DS1220Y-120 DS1220Y-150 DS1220Y-200 CI EEPROM 2816

    2816 eeprom

    Abstract: CI EEPROM 2816 DS1220Y-120 DS1220Y DS1220Y-100 DS1220Y-150 DS1220Y-200 2716 eprom
    Text: Not Recommended for New Design DS1220Y 16k Nonvolatile SRAM www.maxim-ic.com FEATURES § § § § § § § § § PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 2k x 8 volatile static RAM


    Original     		PDF DS1220Y 24-pin 24-ONS 100pF DS1220Y 720-MIL 24-PIN 2816 eeprom CI EEPROM 2816 DS1220Y-120 DS1220Y-100 DS1220Y-150 DS1220Y-200 2716 eprom

    Untitled

    Abstract: No abstract text available
    Text: Not Recommended for New Design DS1220Y 16k Nonvolatile SRAM www.maxim-ic.com FEATURES ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 2k x 8 volatile static RAM


    Original     		PDF DS1220Y 24-pin 720-mil A0-A10 100ns 120ns

    CI EEPROM 2816

    Abstract: eeprom 2816 2816 eprom EEPROM 2816 CMOS 2816 eeprom DS1220Y-200 DALLAS DS1220 DS1220Y DS1220Y-100 DS1220Y-120
    Text: DS1220Y DS1220Y 16K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of A7 1 24 VCC • Data is automatically protected during power loss A6 2 23 A8 • Directly A5 3 22 A9 A4 4 21 WE A3 5 20 OE A10 external power


    Original     		PDF DS1220Y DS1220Y 24-PIN CI EEPROM 2816 eeprom 2816 2816 eprom EEPROM 2816 CMOS 2816 eeprom DS1220Y-200 DALLAS DS1220 DS1220Y-100 DS1220Y-120

    DS1220

    Abstract: DS1220Y DS1220Y-100 DS1220Y-120 DS1220Y-150 DS1220Y-200 DS1220Y dallas
    Text: DS1220Y DS1220Y 16K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of A7 1 24 VCC • Data is automatically protected during power loss A6 2 23 A8 • Directly A5 3 22 A9 A4 4 21 WE A3 5 20 OE A10 external power


    Original     		PDF DS1220Y DS1220Y DS1220 DS1220Y-100 DS1220Y-120 DS1220Y-150 DS1220Y-200 DS1220Y dallas

    DS1220

    Abstract: DS1220Y DS1220Y-100 DS1220Y-120 DS1220Y-150 DS1220Y-200
    Text: DS1220Y DS1220Y 16K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of A7 1 24 VCC • Data is automatically protected during power loss A6 2 23 A8 • Directly A5 3 22 A9 A4 4 21 WE A3 5 20 OE A10 external power


    Original     		PDF DS1220Y DS1220Y DS1220 DS1220Y-100 DS1220Y-120 DS1220Y-150 DS1220Y-200

    Untitled

    Abstract: No abstract text available
    Text: DS1220Y DS1220Y 16K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of A7 1 24 VCC • Data is automatically protected during power loss A6 2 23 A8 • Directly A5 3 22 A9 A4 4 21 WE A3 5 20 OE A10 external power


    Original     		PDF DS1220Y DS1220Y 24-PIN

    2716 eeprom

    Abstract: DS1220Y-200 DALLAS DS1220Y DS1220Y-100 DS1220Y-100IND DS1220Y-120 DS1220Y-150 DS1220Y-200 DS1220Y-200IND
    Text: NOT RECOMMENDED FOR NEW DESIGNS DS1220Y 16k Nonvolatile SRAM www.maxim-ic.com FEATURES PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 2k x 8 volatile static RAM


    Original     		PDF DS1220Y 24-pin 2716 eeprom DS1220Y-200 DALLAS DS1220Y DS1220Y-100 DS1220Y-100IND DS1220Y-120 DS1220Y-150 DS1220Y-200 DS1220Y-200IND

    2816 eeprom

    Abstract: CI EEPROM 2816 eeprom 2816 CI EPROM 2816 2816 eprom EEPROM 2816 DATASHEET 2716 eprom datasheet DS1220Y DS1220Y-100 DS1220Y-120
    Text: DS1220Y 16k Nonvolatile SRAM www.dalsemi.com FEATURES PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 2k x 8 volatile static RAM or EEPROM Unlimited write cycles


    Original     		PDF DS1220Y 24-pin 720-mil 100pF DS1220Y 24-PIN 2816 eeprom CI EEPROM 2816 eeprom 2816 CI EPROM 2816 2816 eprom EEPROM 2816 DATASHEET 2716 eprom datasheet DS1220Y-100 DS1220Y-120

    2716 eeprom

    Abstract: eeprom 2816 DS1220Y DS1220Y-100 DS1220Y-100IND
    Text: 19-5579; Rev 10/10 NOT RECOMMENDED FOR NEW DESIGNS DS1220Y 16k Nonvolatile SRAM www.maxim-ic.com FEATURES • •        PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power


    Original     		PDF DS1220Y 24-pin 2716 eeprom eeprom 2816 DS1220Y DS1220Y-100 DS1220Y-100IND

    EEPROM 2816 CMOS

    Abstract: CI EEPROM 2816 DS1220Y-100 DS1220Y-120 DS1220Y-200 eeprom 2816 DS1220Y DS1220Y-100IND DS1220Y-150 DS1220Y-200IND
    Text: NOT RECOMMENDED FOR NEW DESIGNS DS1220Y 16k Nonvolatile SRAM FEATURES PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 2k x 8 volatile static RAM or EEPROM Unlimited write cycles


    Original     		PDF DS1220Y 24-pin 720-mil DS1220Y-150 DS1220Y-150+ DS1220Y-200 DS1220Y-200+ DS1220Y-200IND DS1220Y-200IND+ EEPROM 2816 CMOS CI EEPROM 2816 DS1220Y-100 DS1220Y-120 DS1220Y-200 eeprom 2816 DS1220Y DS1220Y-100IND DS1220Y-150 DS1220Y-200IND

    JESD22-B102

    Abstract: JESD22-B100 JESD22B-102 DS1220
    Text: 02/11/2004 RELIABILITY REPORT FOR USE THIS PART FOR DS1220Y DS1220 Rev D2 AD Dallas Semiconductor 4401 South Beltwood Parkway Dallas, TX 75244-3292 Prepared by: Ken Wendel Reliability Engineering Manager Dallas Semiconductor 4401 South Beltwood Pkwy. Dallas, TX 75244-3292


    Original     		PDF DS1220Y DS1220 60C/90% JESD22-B102 JESD22-B100 JESD22B-102

    2816 eeprom

    Abstract: eeprom 2816 2716 eprom RAM 2816 DS1220Y dallas 2716 eeprom 2716 2k eprom retention 2816 eprom sram 2k x 8 eeprom 2716
    Text: DS1220Y DALLAS SEMICONDUCTOR DS1220Y 16K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of externa! power 1 24 Aö 2 23 A5 3 22 A4 4 21 A3 5 20 A2 6 19 A1 7 18 A0 8 17 • Read and write access times as fast as 100 ns


    OCR Scan     		PDF DS1220Y 24-pin DS1220Y 2816 eeprom eeprom 2816 2716 eprom RAM 2816 DS1220Y dallas 2716 eeprom 2716 2k eprom retention 2816 eprom sram 2k x 8 eeprom 2716

    1220Y

    Abstract: DS1220
    Text: DS1220Y DALLAS SEM ICONDUCTOR FEATURES DS1220Y 16K Nonvolatile SRAM PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power • Datais automatically protected during power loss • Directly replaces 2K x 8 volatile static RAM or


    OCR Scan     		PDF DS1220Y DS1220Y 24-PIN A0-A10 1220Y DS1220

    Untitled

    Abstract: No abstract text available
    Text: DALLAS SEMICONDUCTOR DS1220Y 16K Nonvolatile SR AM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power A7 | 1 • Data is automatically protected during power loss • Directly replaces 2K x 8 volatile static RAM or


    OCR Scan     		PDF 24-pin DS1220Y AS1220XTjR-jSS^ DS1220Y

    2816 eeprom

    Abstract: eeprom 2816 CI EEPROM 2816 DSI220Y DS1220Y-200 DALLAS 2816 eprom RAM 2816 DS1220 DS1220Y DS1220Y-100
    Text: !• DALLAS n r mmimmmmm DS1220Y 16k Nonvolatile SRAM t com PIN ASSIGNMENT FEATURES ■ ■ ■ ■ ■ ■ ■ ■ ■ 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 2k x 8 volatile static RAM


    OCR Scan     		PDF 24-pin DS1220Y DS1220 DSI220Y 720-MIL 24-PIN 2816 eeprom eeprom 2816 CI EEPROM 2816 DSI220Y DS1220Y-200 DALLAS 2816 eprom RAM 2816 DS1220Y-100

    2816 eeprom

    Abstract: CI EEPROM 2816 eeprom 2816 RAM 2816 2816 eprom DS1220Y DS1220Y-100 DS1220Y-120 DS1220Y-150 DS1220Y-200
    Text: DS 1220Y DALLAS SEMICONDUCTOR FEATURES DS1220Y 16K N onvolatile SRAM PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power A7 1 < • Data is automatically protected during power loss • Directly replaces 2K x 8 volatile static RAM or


    OCR Scan     		PDF DS1220Y 24-pin 2bl413D DS1220Y 24-PIN 2bl4130 2816 eeprom CI EEPROM 2816 eeprom 2816 RAM 2816 2816 eprom DS1220Y-100 DS1220Y-120 DS1220Y-150 DS1220Y-200

    dallas 1220y

    Abstract: 1220Y
    Text: D S 1220Y DALLAS SEMICONDUCTOR FEATURES DS1220Y 16K Nonvolatile SRAM PIN A S S I G N M E N T • 10 years m inimum data retention in the absence of external power • Data is autom atically protected during power loss • Directly replaces 2K x 8 volatile static RAM or


    OCR Scan     		PDF 1220Y DS1220Y 24-pin dallas 1220y 1220Y

    2816 eeprom

    Abstract: eeprom 2816 CI EEPROM 2816 2816 eprom RAM 2816 DS1220 DS1220Y DS1220Y-100 DS1220Y-120 DS1220Y-150
    Text: DS 1220Y DALLAS SEMICONDUCTOR FEATURES DS1220Y 16K Nonvolatile SRAM PIN ASSIGNMENT • 1 0 years m inim um data retention in the absence of external power • Data is autom atically protected during pow er loss • Directly replaces 2K x 8 volatile static RAM or


    OCR Scan     		PDF DS1220Y 24-pin A0-A10 DS1220Y 24-PIN 2816 eeprom eeprom 2816 CI EEPROM 2816 2816 eprom RAM 2816 DS1220 DS1220Y-100 DS1220Y-120 DS1220Y-150

    Untitled

    Abstract: No abstract text available
    Text: DS1220Y DALLAS DS1220Y 16K Nonvolatile SRAM s e m ic o n d u c to r FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power • Data is automatically protected during power loss A7 24 1 Vcc A6 | 2 23 1 A8 22 1 A9 A4 | 4


    OCR Scan     		PDF DS1220Y 24-pin DS1220Y 24-PIN 010TNA 1413D

    Untitled

    Abstract: No abstract text available
    Text: DS1220Y D ALLAS DS1220Y 16K Nonvolatile SR A M s e m ic o n d u c to r PIN ASSIGNMENT FEATURES • Data retention in the absence of Vcc 1 24 § Vcc A6 1 2 23 1 AB A7 i • Data is automatically protected during power loss • Directly replaces 2K x 8 volatile static RAM or


    OCR Scan     		PDF DS1220Y 24-pin DS1220Y 24-PIN 720MIL) 010TNA

    Untitled

    Abstract: No abstract text available
    Text: DS1220Y DALLAS SEMICONDUCTOR DS1220Y 16K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power A7 1 24 g V cc A6 | 2 23 A8 | 3 22 | A9 A4 | 4 21 | WE • Unlimited write cycles A3 1 5 20 § ÔÊ • Low-power CMOS


    OCR Scan     		PDF DS1220Y 24-pin 2bl4130

    Untitled

    Abstract: No abstract text available
    Text: DS1220Y D A L L A S s e m ic o n d u c to r D S1220Y 16K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • Data retention in the absence of Vcc A7 1 V cc A8 CO CM 24 1 A5 1 3 22 1 A9 A4 | 4 21 1 w i A3 1 20 1 ÖE A6 • Directly replaces 2K x 8 volatile static RAM or


    OCR Scan     		PDF DS1220Y S1220Y 24-pin 100ns, 120ns, 150ns, 200ns 15ured DS1220Y 24-PIN