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Maxim Integrated Products DS1230Y-70IND- IC NVSRAM 256KBIT PAR 28EDIP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	DS1230Y-70IND-	Tube	449		1	1 $39.69 10 $39.69 100 $32.0815 1000 $29.76671 10000 $29.76671	Buy Now
Maxim Integrated Products DS1230Y-70- IC NVSRAM 256KBIT PAR 28EDIP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	DS1230Y-70-	Tube	403		1	1 $38.65 10 $38.65 100 $31.2465 1000 $28.99214 10000 $28.99214	Buy Now
Maxim Integrated Products DS1230Y-150- IC NVSRAM 256KBIT PAR 28EDIP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	DS1230Y-150-	Tube	191		1	1 $40.16 10 $40.16 100 $32.46433 1000 $30.12159 10000 $30.12159	Buy Now
Maxim Integrated Products DS1230Y-120- IC NVSRAM 256KBIT PAR 28EDIP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	DS1230Y-120-	Tube	126		1	1 $41.78 10 $41.78 100 $33.77433 1000 $31.33698 10000 $31.33698	Buy Now
Maxim Integrated Products DS1230Y-100- IC NVSRAM 256KBIT PAR 28EDIP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	DS1230Y-100-	Tube	90		1	1 $39.25 10 $39.25 100 $31.72583 1000 $29.43659 10000 $29.43659	Buy Now

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DS1230Y Datasheets (162)

Part	Manufacturer	Description	Datasheet Type	PDF
DS1230Y	Dallas Semiconductor	256k Nonvolatile SRAM	Original	PDF
DS1230Y	Harris Semiconductor	256K Nonvolatile SRAM	Original	PDF
DS1230Y	Maxim Integrated Products	256K Nonvolatile SRAM	Original	PDF
DS1230Y	Dallas Semiconductor	256K Nonvolatile SRAM	Scan	PDF
DS1230Y	Dallas Semiconductor	256K Nonvolatile SRAM	Scan	PDF
DS1230Y-100	Dallas Semiconductor	NVRAM, NVSRAM, Parallel, 5V Supply Voltage, 28-DIP	Original	PDF
DS1230Y-100	Dallas Semiconductor	256k Nonvolatile SRAM	Original	PDF
DS1230Y-100	Dallas Semiconductor	256K Nonvolatile SRAM	Original	PDF
DS1230Y-100	Dallas Semiconductor	Memory, Integrated Circuits (ICs), IC NVSRAM 256KBIT 100NS 28EDIP	Original	PDF
DS1230Y-100+	Dallas Semiconductor	Memory, Integrated Circuits (ICs), IC NVSRAM 256KBIT 100NS 28EDIP	Original	PDF
DS1230Y-100	Maxim Integrated Products	256k Nonvolatile SRAM	Original	PDF
DS1230Y-100	Maxim Integrated Products	NVRAM, 256k Nonvolatile SRAM	Original	PDF
DS1230Y-100+	Maxim Integrated Products	3.3V 256K Nonvolatile SRAM. Lead-free	Original	PDF
DS1230Y-100+	Maxim Integrated Products	256k Nonvolatile SRAM	Original	PDF

DS1230Y-100	Dallas Semiconductor	256K Nonvolatile SRAM	Scan	PDF
DS1230Y-100-IND	Dallas Semiconductor	NVRAM, NVSRAM, Parallel, 5V Supply Voltage, 28-DIP	Original	PDF
DS1230Y-100IND	Maxim Integrated Products	256k Nonvolatile SRAM	Original	PDF
DS1230Y-100-IND	Maxim Integrated Products	NVRAM, 256k Nonvolatile SRAM	Original	PDF
DS1230Y-120	Dallas Semiconductor	NVRAM, NVSRAM, Parallel, 5V Supply Voltage, 28-DIP	Original	PDF
DS1230Y-120	Dallas Semiconductor	256k Nonvolatile SRAM	Original	PDF

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DS1230Y Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
DS1230Y Abstract: No abstract text available Text: RELIABILITY MONITOR PRODUCT MONITOR DATE DATE CODE ASSEMBLY FACILITY ASSEMBLY LOT NO PROCESS TYPE PACKAGE TYPE DS1230Y Apr-97 9713 H DALLAS DA093172 N/A 28 MODULE STRESS/JOB NO. READPOINT Sample Size/No. of Fails Storage Life 85°C, No Bias P-19480 48 Hr	Original	DS1230Y Apr-97 DA093172 P-19480 P-19524 P-19525 P-19479 P-19478 DS1230Y	PDF
Untitled Abstract: No abstract text available Text: RELIABILITY MONITOR DS1230YL-100 JAN '99 LPM MONITOR - DALLAS DEVICE REVISION DATE CODE LOT NUMBER PINS PACKAGE WIDTH ASSEMBLY SITE DS1230Y A1 LPM 720 Dallas 9844 JOB_NO DESCRIPTION 105760 CONDITION 23058 PHYSICAL DIMENSIONS MIL-STD-883-2016 TOTAL: 23059 STORAGE LIFE	Original	DS1230YL-100 DS1230Y MIL-STD-883-2016 60C/90% DS5000T DS5000T MIL-STD-883-2003	PDF
Untitled Abstract: No abstract text available Text: RELIABILITY MONITOR DS1230Y-100 JAN '01 MONITOR DEVICE REVISIO DATE CD LOT NUMBER PINS PACKAGE WIDTH ASSEMBLY SITE DS1230 A1-Y 0045 720 305435 28 Module w/SMT Fastech JOB_NO DESCRIPTION CONDITION 26427 SOLDERABILITY MIL-STD-883-2003 TOTAL: 3 26428 PHYSICAL DIMENSIONS MIL-STD-883-2016	Original	DS1230Y-100 DS1230 MIL-STD-883-2003 MIL-STD-883-2016 60C/90% DS3801 DS3816 -C501	PDF
Untitled Abstract: No abstract text available Text: RELIABILITY MONITOR PRODUCT MONITOR DATE DATE CODE ASSEMBLY FACILITY ASSEMBLY LOT NO PROCESS TYPE PACKAGE TYPE DS1230Y Apr-96 9611 H DALLAS DA076935AAA N/A 28 MODULE STRESS/JOB NO. READPOINT Sample Size/No. of Fails Storage Life 85°C, No Bias P-17208 48 Hr	Original	Apr-96 P-17208 P-17258 P-17259 DA076935AAA DS1230Y P-17207 P-17206	PDF
DS1230Y-100 Abstract: DS1230 DS1230AB DS1230AB-100 DS1230AB-70 DS1230AB-85 DS1230Y DS1230Y-85 DS9034PC ADS1230 Text: DS1230Y/AB 256k Nonvolatile SRAM FEATURES PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 32k x 8 volatile static RAM, EEPROM or Flash memory	Original	DS1230Y/AB DS1230Y) DS1230AB) 28-pin 100ns 120ns DS1230Y-100 DS1230 DS1230AB DS1230AB-100 DS1230AB-70 DS1230AB-85 DS1230Y DS1230Y-85 DS9034PC ADS1230	PDF
DS1230 Abstract: DS1230AB DS1230AB-100 DS1230AB-70 DS1230AB-85 DS1230Y DS1230Y-100 DS1230Y-85 DS9034PC DS1230Y-150 DALLAS Text: DS1230Y/AB 256k Nonvolatile SRAM www.maxim-ic.com FEATURES § § § § § § § § § § § § PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 32k x 8 volatile static RAM,	Original	DS1230Y/AB DS1230Y) DS1230AB) 28-pin DS1230 DS1230AB DS1230AB-100 DS1230AB-70 DS1230AB-85 DS1230Y DS1230Y-100 DS1230Y-85 DS9034PC DS1230Y-150 DALLAS	PDF
9735 h Abstract: DS1230Y Text: RELIABILITY MONITOR PRODUCT MONITOR DATE DATE CODE ASSEMBLY FACILITY ASSEMBLY LOT NO PROCESS TYPE PACKAGE TYPE DS1230Y Oct-97 9735 H DALLAS DA097816 N/A 28 MODULE STRESS/JOB NO. READPOINT Sample Size/No. of Fails Storage Life 85°C, No Bias P-20679 48 Hr	Original	DS1230Y Oct-97 DA097816 P-20679 P-20699 P-20700 P-20678 P-20677 9735 h DS1230Y	PDF
DS1230Y-120-IND Abstract: DS1230Y-85 Text: DS1230Y/AB 256k Nonvolatile SRAM www.maxim-ic.com FEATURES § § § § § § § § § § § § PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 32k x 8 volatile static RAM,	Original	DS1230Y/AB DS1230Y) DS1230AB) 28-pin 56-G0003-001A1 DS1230YP-100 DS1230YP-70IND DS1230Y-120-IND DS1230Y-85	PDF
2-5779 Abstract: No abstract text available Text: RELIABILITY MONITOR DS1230YL-100 JAN '00 LPM MONITOR DEVICE REVISIO DATE CD LOT NUMBER PINS PACKAGE WIDTH ASSEMBLY SITE DS1230 B1-Y 9944 720 JOB_NO DESCRIPTION 110596 34 CONDITION 25010 PHYSICAL DIMENSIONS MIL-STD-883-2016 TOTAL: 25011 STORAGE LIFE 25012 TEMP CYCLE	Original	DS1230YL-100 DS1230 MIL-STD-883-2016 60C/90% DS1230AB-200 DS5000T DS5000 2-5779	PDF
25814 Abstract: No abstract text available Text: RELIABILITY MONITOR DS1230Y-200 APR '00 Monitor DEVICE REVISIO DATE CD LOT NUMBER PINS PACKAGE WIDTH ASSEMBLY SITE DS1230 B1-Y 0005 720 118511 28 Module w/SMT Fastech JOB_NO DESCRIPTION CONDITION 25412 SOLDERABILITY MIL-STD-883-2003 TOTAL: 3 25413 PHYSICAL DIMENSIONS MIL-STD-883-2016	Original	DS1230Y-200 DS1230 MIL-STD-883-2003 MIL-STD-883-2016 60C/90% DS1230AB-200 DS5000T DS5000 25814	PDF
28256 eeprom Abstract: DALLAS SEMICONDUCTOR Ds1230 EEPROM 28256 dallas ds1230 a7 surface mount diode DS1230Y-200 DALLAS DS1230Y-70 DS1230Y-85 DQ213 DS1230AB Text: DS1230Y/AB DS1230Y/AB 256K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power • Data is automatically protected during power loss • DIP-package devices directly replace 32K x 8 volatile static RAM or EEPROM	Original	DS1230Y/AB DS1230YL/ABL DS34PIN 28256 eeprom DALLAS SEMICONDUCTOR Ds1230 EEPROM 28256 dallas ds1230 a7 surface mount diode DS1230Y-200 DALLAS DS1230Y-70 DS1230Y-85 DQ213 DS1230AB	PDF
DS1230 Abstract: DS1230AB DS1230AB-100 DS1230AB-70 DS1230AB-85 DS1230Y DS1230Y-100 DS1230Y-85 DS9034PC Text: 2000-12-22 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 73-766-01 DS1230Y 256k NV SRAM DS1230Y/AB 256k Nonvolatile SRAM www.dalsemi.com FEATURES PIN ASSIGNMENT 10 years minimum data retention in the	Original	DS1230Y DS1230Y/AB DS1230Y) DS1230AB) DS1230 DS1230AB DS1230AB-100 DS1230AB-70 DS1230AB-85 DS1230Y-100 DS1230Y-85 DS9034PC	PDF
Untitled Abstract: No abstract text available Text: DS1230Y IL08 C-MOS 256 K 32,768 x 8 -BIT NONVOLATILE STATIC RAM —TOP/SIDE VIEW— 24 23 22 21 20 19 18 17 16 15 14 13 1 26 2 23 21 24 25 1 2 3 4 5 6 7 8 9 10 11 12 3 4 5 6 7 8 9 10 A14 DQ7 A13 DQ6 A12 DQ5 A11 DQ4 A10 DQ3 A9 DQ2 A8 DQ1 A7 DQ0 SIGNAL PIN	Original	DS1230Y	PDF
DS1230 Abstract: EEPROM 28256 DS1230AB DS1230AB-100 DS1230AB-70 DS1230AB-85 DS1230Y DS1230Y-100 DS1230Y-85 DS9034PC Text: DS1230Y/AB 256k Nonvolatile SRAM www.dalsemi.com FEATURES PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 32k x 8 volatile static RAM, EEPROM or Flash memory Unlimited write cycles	Original	DS1230Y/AB DS1230Y) DS1230AB) 28-pin DS1230 EEPROM 28256 DS1230AB DS1230AB-100 DS1230AB-70 DS1230AB-85 DS1230Y DS1230Y-100 DS1230Y-85 DS9034PC	PDF

Untitled Abstract: No abstract text available Text: DS1230Y/AB DALLAS DS1230Y/AB 256K Nonvolatile SRAM SEMICONDUCTOR FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power A14 A12 A7 A6 A5 A4 A3 A2 • Data is autom atically protected during power loss • Replaces 32K x 8 volatile static RAM, EEPROM or	OCR Scan	DS1230Y/AB	PDF
1230Y Abstract: DALLAS SEMICONDUCTOR Ds1230 Text: D S 1230Y/A B DALLAS SEMICONDUCTOR FEATURES DS1230Y/AB 256K Nonvolatile SRAM PIN ASSIGNMENT A14 11 1 281 A12 112 2711WE A7 113 2611A13 A6 114 2511A8 A5 11 5 2411A9 A4 11 6 2311A11 A3 11 7 2211ÔË A2 118 21 11A10 A1 119 201I ^ A0 11 10 1911DQ7 DQO11 11 1811DQ6	OCR Scan	1230Y/A DS1230Y) DS1230AB) 28-pin 1230Y DS1230Y/AB 34-PIN DALLAS SEMICONDUCTOR Ds1230	PDF
Untitled Abstract: No abstract text available Text: DS 1230YL/BL DALLAS SEMICONDUCTOR DS1230YL/BL 256K Nonvolatile SRAM NOT RECOMMENDED FOR NEW DESIGNS. SEE DS1230Y/AB DATA SHEET. FEATURES PIN ASSIGNMENT • 10 years m inimum data retention in the absence of external power 34 33 32 31 30 29 28 27 26 25 24 23	OCR Scan	1230YL/BL DS1230YL) DS1230BL) DS1230YL/BL DS1230evels DS1230TT-, 34-PIN	PDF
DS1230Y-200 DALLAS Abstract: EEPROM 28256 DS1230 DS1230AB DS1230AB-100 DS1230AB-70 DS1230AB-85 DS1230Y DS1230Y-70 DS1230Y-85 Text: DS1230Y/AB 256k Nonvolatile SRAM ww w.dalsem i.com PIN ASSIGNMENT FEATURES 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 32k x 8 volatile static RAM, EEPROM or Flash memory Unlimited write cycles	OCR Scan	DS1230Y/AB DS1230Y) DS1230AB) 28-pin DS1230Y/AB DS1230Y-200 DALLAS EEPROM 28256 DS1230 DS1230AB DS1230AB-100 DS1230AB-70 DS1230AB-85 DS1230Y DS1230Y-70 DS1230Y-85	PDF
Untitled Abstract: No abstract text available Text: DS1230Y/AB DALLAS SEMICONDUCTOR FEATURES DS1230Y/AB 256K Nonvolatile SRAM PIN ASSIGNMENT • Data retention in the absence of Vcc A14 11 1 A12 I1 2 A7 I1 3 A6 I1 4 A5 I1 5 A4 I1 6 A3 I1 7 A2 I1 8 • Data is automatically protected during the decrease in Vcc at power loss	OCR Scan	DS1230Y/AB 1230Y/A DS1230Y/AB 28-PIN	PDF
1230Y Abstract: No abstract text available Text: D S 1230Y/A B DALLAS DS1230Y/AB 256K Nonvolatile SRAM SEMICONDUCTOR FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power A14 I1 1 • Data is automatically protected during power loss A12 I A7 I A6 I • Dl P-package devices directly replace 32K x 8 volatile	OCR Scan	1230Y/A DS1230Y/AB DS1230Y) DS1230AB) 2bl4130 013S3t S1230Y/AB DS1230YL/ABL 34-PIN DS34P 1230Y	PDF
Untitled Abstract: No abstract text available Text: DS1230Y/AB DALLAS SEMICONDUCTOR FEATURES DS1230Y/AB 256K Nonvolatile SRAM PIN ASSIGNMENT • Data retention in the absence of VCc A14 • Data is automatically protected during the decrease in Vcc at power loss A12 • Directly replaces 32K x 8 volatile static RAM or EEPROM	OCR Scan	DS1230Y/AB 28-pin 28-PIN	PDF
Untitled Abstract: No abstract text available Text: DALLAS DS1230Y/AB 256K Nonvolatile SRAM s e m ic o n d u c to r FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power A14 A12 A7 • Data is automatically protected during power loss A6 I1 1 28 11 Vcc 11 2 1I 3 27 11 WE	OCR Scan	DS1230Y/AB electric015 Sbl413Q 2bl413Q D01b3T4	PDF
Untitled Abstract: No abstract text available Text: DS1230Y/AB DALLAS DS1230Y/AB 256K Nonvolatile SRAM s e m ic o n d u c to r PIN ASSIGNMENT FEATURES • Data retention in the absence of V cc • Data is automatically protected during the decrease in V cc at power loss A14 I1 1 A12 I1 A7 I1 A6 I1 A5 I1 A4	OCR Scan	DS1230Y/AB 28-pin 28-PIN	PDF
Untitled Abstract: No abstract text available Text: DS1230Y/AB DALLAS SEMICONDUCTOR DS1230Y/AB 256K Nonvolatile SRAM PIN ASSIGNMENT FEATURES • 10 years minimum data retention in the absence of external power • Data is automatically protected during power loss • DIP-package devices directly replace 32K x 8 volatile	OCR Scan	DS1230Y/AB DS1230Y) DS1230AB) 28-pin 68-pin packag02 DS1230Y/AB 34-PIN	PDF

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DS1230Y Price and Stock

Maxim Integrated Products DS1230Y-70IND-

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DS1230Y Datasheets (162)

DS1230Y Datasheets Context Search

DS1230Y

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DS1230Y-100

DS1230

9735 h

DS1230Y-120-IND

2-5779

25814

28256 eeprom

DS1230

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DS1230

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1230Y

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DS1230Y-200 DALLAS

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1230Y

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