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    ATC100B100JT

    Abstract: RFMD PA LTE
    Text: RFG1M09090 700MHz to 1000MHz 90W GaN Power Amplifier Package: Flanged Ceramic, 2-Pin, RF400-2 Features • Advanced GaN HEMT Technology  Peak Modulated Power >120W  Advanced Heat-Sink Technology  Single Circuit for 865MHz to 960MHz  48V Operation Typical Performance


    Original
    RFG1M09090 700MHz 1000MHz RF400-2 865MHz 960MHz 44dBm -55dBc RFG1M09090 ATC100B100JT RFMD PA LTE PDF

    A114 es

    Abstract: No abstract text available
    Text: FMS2016-005 FMS2016-005 High Power Reflective GaAs SP4T Switch HIGH POWER REFLECTIVE GaAs SP4T SWITCH Package: 3 mm x 3 mm QFN Product Description Features The FMS2016-005 is a low loss, high power, linear single-pole four-throw Gallium Arsenide antenna switch designed for use in mobile handset and other high power


    Original
    FMS2016-005 FMS2016-005 S7409-9421 J-STD-020, DS130507 A114 es PDF