TTC-B01
Abstract: TTC-B-01 TTC 104 T5.5A ttc 103 MA28139 ttc 103 datasheet FTC 960 GEC Plessey Semiconductors cross reference RTU DATA SHEET
Text: MA28139 MA28139 OBDH Bus Terminal Replaces June 1999 version, DS3592-5.0 DS3592-6.0 January 2000 The OBT ASIC will interface any user to the ESA On Board Data Handling bus. Developed under ESA Contract, it conforms to ESA OBDH, Digital Bus Interface and Internal
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MA28139
DS3592-5
DS3592-6
TTC-B01
TTC-B-01
TTC 104
T5.5A
ttc 103
MA28139
ttc 103 datasheet
FTC 960
GEC Plessey Semiconductors cross reference
RTU DATA SHEET
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XG404
Abstract: DB10 DS3595-5 ds35954 DS3595
Text: 54HSC/T630 54HSC/T630 Radiation hard 16-Bit ParallelError Detection & Correction Replaces June 1999 version, DS3595-4.0 DS3595-5.0 January 2000 The 54HSC/T630 is a 16-bit parallel Error Detection and Correction circuit. It uses a modified Hamming code to generate a 6-bit check word from each 16-bit data word. The
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54HSC/T630
16-Bit
DS3595-4
DS3595-5
54HSC/T630
22-bit
XG404
DB10
ds35954
DS3595
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TTC-B-01
Abstract: TTC 104 ttc 103 datasheet MA28138 MA28139 marconi company MIL-STD-1750 MOSC T5.5A
Text: MA28139 MA28139 OBDH Bus Terminal Replaces January 2000 version, DS3592-6.0 DS3592-6.1 July 2002 The OBT ASIC will interface any user to the ESA On Board Data Handling bus. Developed under ESA Contract, it conforms to ESA OBDH, Digital Bus Interface and Internal
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MA28139
DS3592-6
TTC-B-01
TTC 104
ttc 103 datasheet
MA28138
MA28139
marconi company
MIL-STD-1750
MOSC
T5.5A
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MA28139
Abstract: MA28138 T5.5A TTC-B01
Text: MA28139 MA28139 OBDH Bus Terminal Replaces January 2000 version, DS3592-6.0 DS3592-6.1 July 2002 The OBT ASIC will interface any user to the ESA On Board Data Handling bus. Developed under ESA Contract, it conforms to ESA OBDH, Digital Bus Interface and Internal
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MA28139
DS3592-6
MA28139
MA28138
T5.5A
TTC-B01
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16-LINE TO 4-LINE PRIORITY ENCODERS
Abstract: t04 68 3 pin diode t04 68 3 pin transistor EB 36 3C GR "silicon on sapphire" 74 LS 04 Logic Gates cmos dual s-r latch MIL-STD-38510 multiplexers 74 LS 150 transistor T04
Text: 54HSC/T Series 54HSC/T Series Radiation Hard High Speed CMOS/SOS Logic Replaces May 1995 version, DS3594-3.3 The CMOS/SOS HSC/T Series offer the combined benefits of low power, high speed CMOS with the inherent latch up immunity, Single Event Upset SEU immunity and the high
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54HSC/T
DS3594-3
54/74LS,
DS3594-4
16-LINE TO 4-LINE PRIORITY ENCODERS
t04 68 3 pin diode
t04 68 3 pin transistor
EB 36 3C GR
"silicon on sapphire"
74 LS 04 Logic Gates
cmos dual s-r latch
MIL-STD-38510
multiplexers 74 LS 150
transistor T04
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54HST630
Abstract: DB10 DS3595-5
Text: 54HSC/T630 54HSC/T630 Radiation hard 16-Bit ParallelError Detection & Correction Replaces January 2000 version, DS3595-5.0 DS3595-5.1 July 2002 The 54HSC/T630 is a 16-bit parallel Error Detection and Correction circuit. It uses a modified Hamming code to generate a 6-bit check word from each 16-bit data word. The
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54HSC/T630
16-Bit
DS3595-5
54HSC/T630
22-bit
54HST630
DB10
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RBL 43 P TRANSISTOR
Abstract: RBL 43 P litton cpu MA28138 RBL 43 P Transistor Circuits bt 109 transistor RBL 43 RBL 43 P TRANSÄ°STOR MA281 MA28139
Text: THIS DOCUMENT IS FOR MAINTENANCE PURPOSES ONLY AND IS NOT RECOMMENDED FOR NEW DESIGNS MA28138 MARCH 1995 PRELIMINARY INFORMATION DS3591-4.4 MA28138 OBDH REMOTE BUS INTERFACE The MA28138 is an OBDH Remote Bus Interface RBI that provides the facilities required by a modern packet OBDH
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MA28138
DS3591-4
MA28138
MA28139
RBL 43 P TRANSISTOR
RBL 43 P
litton cpu
RBL 43 P Transistor Circuits
bt 109 transistor
RBL 43
RBL 43 P TRANSÄ°STOR
MA281
MA28139
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DS3595-5
Abstract: 54HST630 DB10 DS3595 XG404
Text: 54HSC/T630 54HSC/T630 Radiation hard 16-Bit ParallelError Detection & Correction Replaces January 2000 version, DS3595-5.0 The 54HSC/T630 is a 16-bit parallel Error Detection and Correction circuit. It uses a modified Hamming code to generate a 6-bit check word from each 16-bit data word. The
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54HSC/T630
16-Bit
DS3595-5
54HSC/T630
22-bit
54HST630
DB10
DS3595
XG404
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RBL 43 P TRANSISTOR
Abstract: RBL 43 P transistor bc 1906 RBL 43 P Transistor Circuits RBL 43 litton cpu RBL 43 P TRANSISTOR parameters Litton Systems bt 109 transistor MA28138
Text: MA28138 MARCH 1995 PRELIMINARY INFORMATION DS3591-4.4 MA28138 OBDH REMOTE BUS INTERFACE The MA28138 is an OBDH Remote Bus Interface RBI that provides the facilities required by a modern packet OBDH bus system but at the same time preserves compatibility with
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MA28138
DS3591-4
MA28138
MA28139
RBL 43 P TRANSISTOR
RBL 43 P
transistor bc 1906
RBL 43 P Transistor Circuits
RBL 43
litton cpu
RBL 43 P TRANSISTOR parameters
Litton Systems
bt 109 transistor
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MA1916
Abstract: szy 21
Text: APRIL 1995 MA1916 DS3590-3.2 MA1916 RADIATION HARD REED-SOLOMON & CONVOLUTION ENCODER The purpose of the MA1916 is to encode serial data to allow error correction when the data is transmitted over a noisy communication link. As the name suggests, the unit contains
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MA1916
DS3590-3
MA1916
szy 21
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szy 21
Abstract: ce 65 s encoder MA1916 seal msg XG404 convolution encoder
Text: MA1916 MA1916 Radiation Hard Reed-Solomon & Convolution Encoder Replaces June 1999 version, DS3590-4.0 DS3590-5.0 January 2000 The purpose of the MA1916 is to encode serial data to allow error correction when the data is transmitted over a noisy communication link. As the name suggests, the unit contains
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MA1916
DS3590-4
DS3590-5
MA1916
szy 21
ce 65 s encoder
seal msg
XG404
convolution encoder
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full adder circuit using nor gates
Abstract: D-latch DIL40 DIL48 half adder ttl half adder circuit using nor and nand gates microprocessor radiation hard datasheet SRDL DIL14 DIL16
Text: MA9000 Series MAY 1995 DS3598-3.4 MA9000 Series SILICON-ON-SAPPHIRE RADIATION HARD GATE ARRAYS The logic building block for the GPS double level metal CMOS/SOS gate arrays is a four transistor ‘cell-unit’ equivalent in size to a 2 input NAND gate. Back to back cellunits as illustrated, organised in rows, form the core of the
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MA9000
DS3598-3
full adder circuit using nor gates
D-latch
DIL40
DIL48
half adder ttl
half adder circuit using nor and nand gates
microprocessor radiation hard datasheet
SRDL
DIL14
DIL16
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MA5114
Abstract: a8415
Text: MA5114 MA5114 Radiation hard 1024x4 Bit Static RAM Replaces January 2000 version, DS3591-5.0 DS3591-5.1 July 2002 The MA5114 4k Static RAM is configured as 1024 x 4 bits and manufactured using CMOS-SOS high performance, radiation hard, 3µm technology. The design uses a 6 transistor cell and has full static operation with
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MA5114
1024x4
DS3591-5
MA5114
a8415
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vhdl code for 4 bit carry look ahead adder
Abstract: vhdl code for 8 bit carry look ahead adder DS3596-4 full adder circuit using nor gates vhdl code for carry look ahead adder DS3596 LAH3 vhdl code for 4 bit ripple COUNTER CERQUAD44 MA9600
Text: MA9000A Sea of MA9000A Gates Radiation hard Advance Gate Array Design System ReplacesJanuary 2000 version, DS3596-4.0 DS3596-4.1 July 2002 The logic building block is a cell-unit, equivalent in size to a two input NAND gate. Back-to-back cell units form the core of
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MA9000A
MA9000A
DS3596-4
vhdl code for 4 bit carry look ahead adder
vhdl code for 8 bit carry look ahead adder
full adder circuit using nor gates
vhdl code for carry look ahead adder
DS3596
LAH3
vhdl code for 4 bit ripple COUNTER
CERQUAD44
MA9600
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Untitled
Abstract: No abstract text available
Text: THIS DOCUMENT IS FOR MAINTENANCE PURPOSES ONLY AND IS NOT RECOMMENDED FOR NEW DESIGNS MA28139 APRIL 1995 DS3592-4.6 MA28139 OBDH BUS TERMINAL The OBT ASIC will interface any user to the ESA On Board Data Handling bus. Developed under ESA Contract, it conforms to ESA OBDH, Digital Bus Interface and Internal
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MA28139
DS3592-4
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Untitled
Abstract: No abstract text available
Text: Si GEC PLESS EY S E M I C O N D U C T O R S ADVANCE INFORMATION DS3593-2.2 15HSC Series RADIATION HARD HIGH SPEED CMOS/SOS LOGIC The 15HSC Series offer the conbined benefits of low power, high speed CMOS with the inherent latch up immunity, Single Event Upset SEU immunity and high level of radiation
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DS3593-2
15HSC
54HSC
15HSC138
15HSC163
XG402
37b6522
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54175
Abstract: No abstract text available
Text: GEC P L E S S E Y M S E M I C O N D U C T O R S DS3594-3.3 54HSC/T Series RADIATION HARD HIGH SPEED CMOS/SOS LOGIC The CMOS/SOS HSC/T Series offer the combined benefits of low power, high speed CMOS with the inherent latch up immunity, Single Event Upset SEU immunity and the high
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DS3594-3
54HSC/T
54/74LS,
Cobalt-60
MIL-STD-883
54xHSC139xxxxx
54175
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Untitled
Abstract: No abstract text available
Text: P ^ p i G E C P L E S S E Y S E M I C O N D U C T O R S DS3592-4.6 MA28139 OBDH BUS TERMINAL The OBT ASIC will interface any user to the ESA On Board Data Handling bus. Developed under ESA Contract, it conforms to ESA OBDH, Digital Bus Interface and Internal
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DS3592-4
MA28139
MA28139)
MA28138)
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Untitled
Abstract: No abstract text available
Text: w GEC P L E S S E Y SE M I C O N D U C T O R S DS3598-3.2 MA9000 Series SILICON-ON-SAPPHIRE RADIATION HARD GATE ARRAYS T h e logic building b lo ck fo r th e G P S d ouble level m etal C M O S /S O S g a te a rra y s is a fo u r tr a n s is to r 'c e ll- u n it’
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DS3598-3
MA9000
3Sx24nnnxxxxx
QG22141
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S/A3N01
Abstract: No abstract text available
Text: S i GEC PLESSEY S E M I C O N D U C T O R S DS3597-2.4 MACROSOS1 RADIATION HARD STANDARD CELL DESIGN SYSTEM GPS’s Silicon on Sapphire process provides significant advantages over other CMOS technologies The absence of the bulk silicon substrate reduces parasitic capacitance, giving
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DS3597-2
37bflS22
37bfl522
S/A3N01
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Untitled
Abstract: No abstract text available
Text: Si G E C P L E S S E Y SE M I C O N D U C T O R S DS3597-2 3 M ACRO SO S1 RADIATION HARD STANDARD CELL DESIGN SYSTEM GPS's Silicon on Sapphire process provides significant advantages over other CMOS technologies The absence of the bulk silicon substrate reduces parasitic capacitance, giving
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DS3597-2
37bfl522
37bflS22
D052134
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Untitled
Abstract: No abstract text available
Text: GEC P L E S S E Y S E M I C O N D U C T O R S DS3595-3.3 54HSC/T630 RADIATION HARD 16-BIT PARALLEL ERROR DETECTION & CORRECTION The 54HSC/T630 is a 16-bit parallel Error Detection and Correction circuit. It uses a modified Hamming code to generate a 6-bit check word from each 16-bit data word. The
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DS3595-3
54HSC/T630
16-BIT
54HSC/T630
22-bit
Cobalt-60
Mil-Std-883
3X1011Rad
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Untitled
Abstract: No abstract text available
Text: S i GEC PLESS EY S F M I C O N D U C T O K S DS3594-3.1 54HSC/T Series RADIATION HARD HIGH SPEED CMOS/SOS LOGIC The CMOS/SOS HSC/T Series offer the combined benefits of low power, high speed CMOS with the inherent latch up immunity, Single Event Upset SEU immunity and the high
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DS3594-3
54HSC/T
54/74LS,
54HSC/T670
flS22
54xHSC139xxxxx
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Untitled
Abstract: No abstract text available
Text: GEC PLESSEY DS3598-3.4 MA9000 Series SILICON-ON-SAPPHIRE RADIATION HARD GATE ARRAYS The logic building block for the GPS double level metal C M O S /S O S ga te arrays is a fo u r tra n s is to r ‘c e ll-u n it’ equivalent in size to a 2 input NAND gate. Back to back cellunits as illustrated, organised in rows, form the core of the
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DS3598-3
MA9000
D0242bl
3Sx24nnnxxxxx
37bflS22
00242b2
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