Untitled
Abstract: No abstract text available
Text: 3.2mmx1.6mm SMD CHIP LED LAMP Part Number: KPT-3216SECK Super Bright Orange Features Description z 3.2mmx1.6mm SMT LED, 0.75mm thickness. The Super Bright Orange device is made with AlGaInP on z Low power consumption. GaAs substrate light emitting diode chip.
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KPT-3216SECK
2000pcs
DSAD0221
DEC/18/2011
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Untitled
Abstract: No abstract text available
Text: 3.2x1.6mm SMD CHIP LED LAMP KPT-3216SECK Description Features !3.2mmx1.6mm SMT LED, 0.75mm THICKNESS. !LOW POWER CONSUMPTION. The Super Bright Orange source color devices are made with DH InGaAlP on GaAs substrate Light Emitting Diode. !WIDE VIEWING ANGLE.
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KPT-3216SECK
2000PCS
DSAD0221
FEB/09/2003
KPT-3216SECK
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KPT-3216SECK
Abstract: No abstract text available
Text: 3.2mmx1.6mm SMD CHIP LED LAMP Part Number: KPT-3216SECK Super Bright Orange Features Description z 3.2mmx1.6mm SMT LED, 0.75mm THICKNESS. The Super Bright Orange device is made with InGaAlP z LOW POWER CONSUMPTION. on GaAs substrate light emitting diode chip.
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KPT-3216SECK
2000PCS
DSAD0221
JUL/02/2007
KPT-3216SECK
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KPT-3216SECK
Abstract: No abstract text available
Text: 3.2mmx1.6mm SMD CHIP LED LAMP KPT-3216SECK Features SUPER BRIGHT ORANGE Description 3.2mmx1.6mm SMT LED, 0.75mm THICKNESS. The Super Bright Orange source color devices are made LOW POWER CONSUMPTION. with DH InGaAlP on GaAs substrate Light Emitting Diode.
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KPT-3216SECK
2000PCS
DSAD0221
MAR/13/2005
KPT-3216SECK
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Untitled
Abstract: No abstract text available
Text: 3.2mmx1.6mm SMD CHIP LED LAMP Part Number: KPT-3216SECK Super Bright Orange Features Description 3.2mmx1.6mm SMT LED, 0.75mm thickness. The Super Bright Orange device is made with AlGaInP on Low power consumption. GaAs substrate light emitting diode chip.
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KPT-3216SECK
2000pcs
si/2010
DSAD0221
SEP/21/2010
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