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    Untitled

    Abstract: No abstract text available
    Text: RF3934 Proposed GaN WIDE-BAND POWER AMPLIFIER RoHS Compliant and Pb-Free Product Package Style: Flanged Ceramic Features „ „ „ „ „ Peak Power=120W Gain=14dB Advanced GaN HEMT Technology 48V Operation Optimized Evaluation Board Layout for 50Ω Operation


    Original     		RF3934 RF3934 DSB070828 PDF

    GaN TRANSISTOR

    Abstract: mobile rf power amplifier transistor GAN high power amplifier GaN BJT RF3933 rf gan amplifier GaN amplifier DSB070828 BJT amplifiers
    Text: RF3933 Proposed GaN WIDE-BAND POWER AMPLIFIER RoHS Compliant and Pb-Free Product Package Style: Flanged Ceramic Features „ „ „ „ „ Peak Power=90W Gain=14dB Advanced GaN HEMT Technology 48V Operation Optimized Evaluation Board Layout for 50Ω Operation


    Original     		RF3933 RF3933 DSB070828 GaN TRANSISTOR mobile rf power amplifier transistor GAN high power amplifier GaN BJT rf gan amplifier GaN amplifier DSB070828 BJT amplifiers PDF