Contextual Info: CMOS STATIC RAM 16K 16Kx 1-BIT IDT6167SA IDT6167LA Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • H igh-speed (equal access and cycle time) — Military: 1 5 /2 0 /2 5 /3 5 /4 5 /5 5 /7 0 /8 5 /1 00ns (max.) — Com mercial: 12 /15/2 0 /2 5 /3 5 n s (m ax.)

Contextual Info: INTEGRATE] DEVICE SÔE V CMOS STATIC RAM 16K 16K x 1-BIT) 4ÖBS771 001154Q TSb IDT6167SA IDT6167LA Integrated Device Technology» Inc. FEATURES: Access times as fast as 12ns are available. The circuit also offers a reduced power standby mode. When CS goes HIGH,

EPC1007P

Abstract: EPC1007H EPC1007HE1G DSC1007
Contextual Info: Ethernet DC/DC Converter EPC1007P & EPC1007H 75 % Typical efficiency at full load @ nominial input voltage Unregulated Output Features Electrical Specifications *Note : Package with G = Surface Mount Device, †† : E1,E1-G,E4,E4-G,E11,Q,Q1, N4-G Optional

cerdip 300mil

Abstract: 300mil SO20 Package 16K RAM IDT6167 IDT6167LA IDT6167SA a0191
Contextual Info: IDT6167SA IDT6167LA CMOS STATIC RAM 16K 16K x 1-BIT Integrated Device Technology, Inc. FEATURES: • High-speed (equal access and cycle time) — Military: 15/20/25/35/45/55/70/85/100ns (max.) — Commercial: 15/20/25/35ns (max.) • Low power consumption

Contextual Info: Integrated DeviceTechnology Inc CM O S STATIC RAM 16K 16K x 1-BIT IDT 6167SA IDT 6167LA FEA T U R ES : DESCRIPTION: • The IDT6167 Is a 16,384-blt high-speed static RAM organized as 16K x 1. The part Is fabricated using IDT’s high-performance, highreliabillty technology-CEM OS. This state-of-the-art technology,