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BP 2818 Abstract: transistor K D 2499 UM 7222 G transistor GaAs FET s parameters Text: EC4711 Wide Band Power FET GaAs Field Effect Transistor Description The EC4711 is a Ku band Schottky barrier Field Effect Transistor with 0.5µm Aluminium gate. Individual via hole connection is made between each source pad and the gold plated back face metallization, through the	Original	EC4711 EC4711 21dBm 23Ghz 18dBm 30GHz DSEC47117003 BP 2818 transistor K D 2499 UM 7222 G transistor GaAs FET s parameters	PDF

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BP 2818

Abstract: transistor K D 2499 UM 7222 G transistor GaAs FET s parameters
Text: EC4711 Wide Band Power FET GaAs Field Effect Transistor Description The EC4711 is a Ku band Schottky barrier Field Effect Transistor with 0.5µm Aluminium gate. Individual via hole connection is made between each source pad and the gold plated back face metallization, through the

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EC4711 EC4711 21dBm 23Ghz 18dBm 30GHz DSEC47117003 BP 2818 transistor K D 2499 UM 7222 G transistor GaAs FET s parameters

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