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    IXYS Corporation DSEI2X31-06C

    DIODE MODULE GP 600V 30A SOT227B
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    DigiKey DSEI2X31-06C Tube 2,261 1
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    Mouser Electronics DSEI2X31-06C 96
    • 1 $19.8
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    Chip 1 Exchange DSEI2X31-06C 2,611
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    New Advantage Corporation DSEI2X31-06C 1,699 1
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    • 100 $38.45
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    IXYS Corporation DSEI25-06A

    DIODE GEN PURP 600V 25A TO220-2
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    DigiKey DSEI25-06A Tube 2,072 1
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    IXYS Corporation DSEI36-06AS-TUB

    DIODE GEN PURP 600V 37A TO263AA
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    DigiKey DSEI36-06AS-TUB Tube 1,419 1
    • 1 $4.7
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    TME DSEI36-06AS-TUB 1
    • 1 $2.62
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    • 100 $1.89
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    IXYS Corporation DSEI36-06AS-TRL

    DIODE GEN PURP 600V 37A TO263AA
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    DigiKey DSEI36-06AS-TRL Digi-Reel 1,269 1
    • 1 $5.75
    • 10 $4.041
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    DSEI36-06AS-TRL Cut Tape 1,269 1
    • 1 $5.75
    • 10 $4.041
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    Mouser Electronics DSEI36-06AS-TRL 1,465
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    TTI DSEI36-06AS-TRL Reel 800 800
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    Chip 1 Exchange DSEI36-06AS-TRL 4,157
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    IXYS Corporation DSEI30-06A

    DIODE GEN PURP 600V 37A TO247AD
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    DigiKey DSEI30-06A Tube 928 1
    • 1 $5.24
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    • 100 $3.162
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    Mouser Electronics DSEI30-06A 9,984
    • 1 $5.21
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    Newark DSEI30-06A Bulk 2,064 1
    • 1 $5.28
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    • 100 $4.15
    • 1000 $3.82
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    DSEI30-06A Bulk 19 1
    • 1 $5.28
    • 10 $4.4
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    • 1000 $3.82
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    Bristol Electronics DSEI30-06A 6
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    TTI DSEI30-06A Tube 18,330 30
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    • 1000 $3.36
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    Chip 1 Exchange DSEI30-06A 21,444
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    New Advantage Corporation DSEI30-06A 240 1
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    • 100 $3.47
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    DSEI Datasheets (117)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    DSEI12 IXYS Fast Recovery Epitaxial Diode (FRED) Original PDF
    DSEI120 IXYS Fast Recovery Epitaxial Diode (FRED) Original PDF
    DSEI120-06A IXYS Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE HI PERF 600V 77A TO247AD Original PDF
    DSEI120-06A IXYS Fast Recovery Epitaxial Diode (FRED) Original PDF
    DSEI120-12A IXYS Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE HI PERF 1.2KV 75A TO247AD Original PDF
    DSEI120-12A IXYS 1200V fast recovery epitaxial diode (FRED) Original PDF
    DSEI12-04A IXYS Fast Recovery Epitaxial Diode Scan PDF
    DSEI12-05A IXYS Fast Recovery Epitaxial Diode Scan PDF
    DSEI12-06A IXYS Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE FAST REC 600V 14A TO220AC Original PDF
    DSEI12-06A IXYS Fast Recovery Epitaxial Diode (FRED) Original PDF
    DSEI12-06A IXYS Fast Recovery Epitaxial Diode Scan PDF
    DSEI12-08A IXYS Fast Recovery Epitaxial Diode Scan PDF
    DSEI12-10A IXYS Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE FAST REC 1KV 12A TO220AC Original PDF
    DSEI12-10A IXYS 1000V fast recovery epitaxial diode (FRED) Original PDF
    DSEI12-10A IXYS Fast Recovery Epitaxial Diode Scan PDF
    DSEI1212 IXYS Original PDF
    DSEI12-12A IXYS Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE FAST REC 1.2KV 11A TO220AC Original PDF
    DSEI12-12A IXYS Fast Recovery Epitaxial Diode (FRED) Original PDF
    DSEI19-06 IXYS Original PDF
    DSEI19-06AS IXYS Fast Recovery Epitaxial Diode (FRED) Original PDF

    DSEI Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Fast Recovery Epitaxial Diodes FRED VRSM VRRM V V 640 600 DSEI 1x 31 IFAVM = 30 A VRRM = 600 V trr = 35 ns miniBLOC, SOT-227 B Type DSEI 1x 31-06C DSEI 1x 31 Symbol Test Conditions Maximum Ratings (per diode) IFRMS IFAVM ÿÿ① IFRM TVJ = TVJM TC = 85°C; rectangular, d = 0.5


    Original     		PDF OT-227 31-06C

    E72873

    Abstract: 30-10B
    Text: DSEI 2x 30 DSEI 2x 31 Fast Recovery Epitaxial Diode FRED VRRM V V 1000 1000 miniBLOC, SOT-227 B E72873 Type DSEI 2x 30-10B DSEI 2x 31-10B DSEI 2x30 DSEI 2x31 Symbol Test Conditions Maximum Ratings (per diode) IFRMS IFAVM ÿÿ① IFRM TVJ = TVJM TC = 50°C; rectangular, d = 0.5


    Original     		PDF OT-227 E72873 30-10B 31-10B E72873 30-10B

    IXYS 12-10A

    Abstract: No abstract text available
    Text: Fast Recovery Epitaxial Diode FRED DSEI 12 VRSM A V VRRM Type C IFAVM = 12 A VRRM = 1000 V trr = 50 ns TO-220 AC C V A 1000 1000 DSEI 12-10A C A = Anode, C = Cathode Test Conditions IFRMS IFAVM ÿÿ① IFRM TVJ = TVJM TC = 100°C; rectangular, d = 0.5 tP < 10 ms; rep. rating, pulse width limited by TVJM


    Original     		PDF O-220 2-10A IXYS 12-10A

    6110B

    Abstract: IXYS DSEI 2X E72873
    Text: DSEI 2x 61 Fast Recovery Epitaxial Diode FRED VRRM V V 1000 1000 miniBLOC, SOT-227 B E72873 Type DSEI 2x 61-10B Symbol Test Conditions Maximum Ratings (per diode) IFRMS IFAVM ÿÿ① IFRM TVJ = TVJM TC = 50°C; rectangular, d = 0.5 tP < 10 ms; rep. rating, pulse width limited by TVJM


    Original     		PDF OT-227 E72873 61-10B 6110B IXYS DSEI 2X E72873

    ixys dsei 2x61

    Abstract: dsei 2x60 IXYS DSEI 2 IXYS DSEI 2X 2x61
    Text: DSEI 2x61 Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 600 600 IFAVM = 2x60 A VRRM = 600 V trr = 35 ns Type DSEI 2x 61-06P D5 Symbol Conditions Maximum Ratings (per diode) IFRMS IFAVM ① IFRM TVJ = TVJM TC = 70°C; rectangular; d = 0.5 tP < 10 µs; rep. rating; pulse width limited by TVJM


    Original     		PDF 61-06P ixys dsei 2x61 dsei 2x60 IXYS DSEI 2 IXYS DSEI 2X 2x61

    Epitaxial Diode FRED VRRM 1200 V 40 ns

    Abstract: 2X161-12P diode 29
    Text: DSEI 2x161-12P IFAVM = 2x128 A VRRM = 1200 V trr = 40 ns Fast Recovery Epitaxial Diode FRED ECO-PAC 2 Preliminary Data Sheet VRRM V V 1200 1200 A C -1 IK -10 LN -9 V X -18 Typ DSEI 2x161-12P Symbol Conditions IFRMS TVJ = TVJM 270 A IFAVM * TC = 70°C; rectangular; d = 0.5


    Original     		PDF 2x161-12P 2x128 Epitaxial Diode FRED VRRM 1200 V 40 ns 2X161-12P diode 29

    IXYS DSEI 2x61-06C

    Abstract: 2x61-06c ixys dsei 2x61 dsei 2x60
    Text: Fast Recovery Epitaxial Diodes FRED VRSM VRRM V V 440 640 400 600 DSEI 2x61 IFAVM = 2x60 A VRRM = 400/600 V = 35 ns trr miniBLOC, SOT-227 B Type DSEI 2x61-04C DSEI 2x61-06C Symbol Test Conditions Maximum Ratings (per diode) IFRMS IFAVM ① IFRM TVJ = TVJM


    Original     		PDF OT-227 2x61-04C 2x61-06C IXYS DSEI 2x61-06C 2x61-06c ixys dsei 2x61 dsei 2x60

    Untitled

    Abstract: No abstract text available
    Text: Fast Recovery Epitaxial Diode FRED VRSM V 1000 VRRM DSEI 12 IFAVM = 12 A VRRM = 1000 V = 50 ns trr C A Type TO-220 AC V 1000 DSEI 12-10A C C A Symbol Test Conditions IFRMS IFAVM ① IFRM TVJ = TVJM TC = 100°C; rectangular, d = 0.5 t P < 10 µs; rep. rating, pulse width limited by TVJM


    Original     		PDF O-220 2-10A

    ixys dsei 12-10a

    Abstract: 24A12 IXYS 12-10A diode 6A 1000v
    Text: DSEI 12-10A Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 1000 1000 IFAV = 12 A VRRM = 1000 V trr = 50 s Type A C TO-220 AC C  A DSEI 12-10A C A = Anode, C = Cathode Symbol Conditions IFRMS IFAVM  IFRM TVJ = TVJM TC = 100°C; rectangular, d = 0.5


    Original     		PDF 2-10A O-220 ixys dsei 12-10a 24A12 IXYS 12-10A diode 6A 1000v

    Untitled

    Abstract: No abstract text available
    Text: DSEI 30-10A Fast RecoveryEpitaxial Diode FRED TO-247 AD VRSM V DSEI 30 IFAVM = 30 A 1000 VRRM = 1000 V = 35 ns Symbol trr l l l l l l International standard package JEDEC TO-247 AD Planar passivated chips Very short recovery time Extremely low switching losses


    Original     		PDF 0-10A O-247

    ixys dsei 2x61

    Abstract: DSEI 2X61-10B ixys dsei 2*61-10b
    Text: Fast Recovery Epitaxial Diodes FRED VRSM V 1000 VRRM DSEI 2x61 IFAVM = 2x60 A VRRM = 1000 V = 35 ns trr miniBLOC, SOT-227 B Type V 1000 DSEI 2x61-10B Symbol Test Conditions Maximum Ratings (per diode) IFRMS IFAVM ① IFRM TVJ = TVJM TC = 50°C; rectangular, d = 0.5


    Original     		PDF OT-227 2x61-10B ixys dsei 2x61 DSEI 2X61-10B ixys dsei 2*61-10b

    dsei2x31

    Abstract: No abstract text available
    Text: DSEI2X31-08B Diodes Array of Independent Diodes Military/High-RelN @Temp øC (Test Condition) Circuits Per Package1 Diodes Per Circuit2 I(F) Max. (A) Forward Current30 V(RRM) (V) Rep.Pk.Rev. Voltage800 t(rr) Max.(s) Rev. Rec. Time50n @I(F) (A) (Test Condition)1


    Original     		PDF DSEI2X31-08B Current30 Voltage800 Time50n Current250u StyleSOT-227B dsei2x31

    Untitled

    Abstract: No abstract text available
    Text: DSEI2X61-06B Diodes Array of Independent Diodes Military/High-RelN @Temp øC (Test Condition) Circuits Per Package1 Diodes Per Circuit2 I(F) Max. (A) Forward Current60 V(RRM) (V) Rep.Pk.Rev. Voltage600 t(rr) Max.(s) Rev. Rec. Time50n @I(F) (A) (Test Condition)1


    Original     		PDF DSEI2X61-06B Current60 Voltage600 Time50n Current500u StyleSOT-227B

    Untitled

    Abstract: No abstract text available
    Text: Fast Recovery Epitaxial Diode FRED DSEI 60 VRSM A V 600 VRRM Type C IFAVM = 60 A VRRM = 600 V = 35 ns trr TO-247 AD V 600 C DSEI 60-06A A C A = Anode, C = Cathode Test Conditions Maximum Ratings IFRMS IFAVM ¬ IFRM TVJ = TVJM TC = 70°C; rectangular, d = 0.5


    Original     		PDF O-247 0-06A

    Untitled

    Abstract: No abstract text available
    Text: Fast Recovery Epitaxial Diodes FRED VRSM VRRM V V 640 600 DSEI 1x 31 IFAVM = 30 A VRRM = 600 V trr = 35 ns miniBLOC, SOT-227 B Type DSEI 1x 31-06C DSEI 1x 31 Symbol Test Conditions Maximum Ratings (per diode) IFRMS IFAVM ¬ IFRM TVJ = TVJM TC = 85°C; rectangular, d = 0.5


    Original     		PDF OT-227 31-06C

    DSEI 120-12A

    Abstract: No abstract text available
    Text: Fast Recovery Epitaxial Diode FRED VRSM VRRM V DSEI 120 Type C A IFAVM = 109 A VRRM = 1200 V trr = 40 ns TO-247 AD V 1200 1200 C DSEI 120-12A A C A = Anode, C = Cathode Symbol IFRMS IFAVM IFAV IFRM IFSM I2t Test Conditions ¬ Maximum Ratings TVJ = TVJM TC = 60°C; rectangular, d = 0.5


    Original     		PDF O-247 20-12A DSEI 120-12A

    Untitled

    Abstract: No abstract text available
    Text: DSEI 60-06A DSEI 60-06AT VRRM = 600 V IFAVM = 60 A trr = 35 ns Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 600 600 600 600 A Type C TO-247 AD A DSEI 60-06A DSEI 60-06AT C C TO-268 AA (AT Type) A A C A = Anode, C = Cathode Symbol Conditions IFRMS IFAVM ①


    Original     		PDF 0-06A 60-06AT 60-06AT O-247 O-268

    Untitled

    Abstract: No abstract text available
    Text: QIXYS Fast Recovery Epitaxial Diode FRED DSEI60 IFAVM vrRRM t v RSM V rrm V h 4V\iVs Type V 1200 1200 DSEI60-12A Symbol Test Conditions ^FRMS TVJ = Maximum Ratings 100 52 800 A A A t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 500 540 A A TVJ = 150°C; t = 10 ms (50 Hz), sine


    OCR Scan     		PDF DSEI60 DSEI60-12A D3D01

    Untitled

    Abstract: No abstract text available
    Text: □IXYS Fast Recovery Epitaxial Diode FRED DSEI 2x101 1200 V V RRM 2x99 A F(AV)M t Preliminary data 40 ns rr miniBLOC, SOT-227 B V rSM V 1200 Symbol Type V rrm V Test Conditions -N - -Ho Maximum Ratings (per diode) 140 99 TBD A A A t = 10 ms (50 Hz), sine


    OCR Scan     		PDF 2x101 OT-227 2x101-12A D-68623

    Untitled

    Abstract: No abstract text available
    Text: Id IXYS • Fast Recovery Epitaxial Diode FRED DSEI60 lFAVM = 69 A VRRM = 200 V trr = 35 ns TO-247 AD c A Sym bol T e st C o n d itio n s ^FRMS "*vj = "*"vjM T c = 85°C; rectangular, d = 0.5 tp < 10 us; rep. rating, pulse width limited by T VJM 98 69 800


    OCR Scan     		PDF DSEI60 O-247 4bflb22b

    ixys dsei 2x61-06C

    Abstract: No abstract text available
    Text: Mt a b PZ b D D G i a S 3 7 1 T • I X Y D I X Y S DSEI 2x61 Fast Recovery Epitaxial Diodes lFAV = 2x60 A VRRM = 400-600 V tn < 35 ns miniBLOC, SOT-227 B V V 440 540 640 400 500 600 2 • DSEI 2x61-04C DSEI 2x61-05C DSEI 2x61-06C 1 1 o-J H Ho 3 -« 4


    OCR Scan     		PDF OT-227 2x61-04C 2x61-05C 2x61-06C D-68619 ixys dsei 2x61-06C

    Untitled

    Abstract: No abstract text available
    Text: □ I X Y S Fast Recovery Epitaxial Diode FRED v* RSM V ^ rrm DSEI 30 *fa vm - 3 0 A VRRM = 1 0 0 0 V trr = 35 ns A Type C l \ TO-247 AD V 1000 1000 DSEI30-10A A Symbol Test Conditions ^FRMS I•favm ★ ^FRM Tyj Tvjm Tc = 85°C; rectangular, d = 0.5 t, < 10 us; rep. rating, pulse width limited by TVJM


    OCR Scan     		PDF O-247 DSEI30-10A 1997IXYS

    FR 0169

    Abstract: 2X61-06C
    Text: Fast Recovery Epitaxial Diodes FRED DSEI 2x61 lFAVM = 2x60 A vRRM= 400/600 V trr vV RSM V rrm \_0 V 440 640 400 600 DSEI 2x61-04C DSEI 2x61-06C Test Conditions Maximum Ratings (per diode) V rm "*"vj = T/ jm T . = 70°C; rectangular, d = 0.5 tp < 10 us; rep. rating, pulse width limited by T vjm


    OCR Scan     		PDF OT-227 2x61-04C 2x61-06C 1490-dip/dt. 1997IXYS FR 0169 2X61-06C

    Untitled

    Abstract: No abstract text available
    Text: □IXYS Fast Recovery Epitaxial Diode FRED DSEI 12 IFAVM vrRRM V 1200 Vrrm 1200 DSEI 12-12A Test C onditions ^FRMS ^FRM "^"vj — "l"vjM Tc = 100°C; rectangular, d = 0.5 tp < 10 ns; rep. rating, pulse width limited byTVJM ^FSM TVJ = 45°C; Maximum Ratings


    OCR Scan     		PDF O-220 2-12A