Untitled
Abstract: No abstract text available
Text: DSZ412SE43 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current230 @Temp (øC) (Test Condition)55ð V(RRM)(V) Rep.Pk.Rev. Voltage4.3k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.1.5k¥ V(FM) Max.(V) Forward Voltage2.1 @I(FM) (A) (Test Condition)300 @Temp. (øC) (Test Condition)25#
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DSZ412SE43
Current230
Current10m
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Untitled
Abstract: No abstract text available
Text: DSZ412SE42 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current230 @Temp (øC) (Test Condition)55ð V(RRM)(V) Rep.Pk.Rev. Voltage4.2k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.1.5k¥ V(FM) Max.(V) Forward Voltage2.1 @I(FM) (A) (Test Condition)300 @Temp. (øC) (Test Condition)25#
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DSZ412SE42
Current230
Current10m
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DSZ412SE
Abstract: DSZ412SE44
Text: DSZ412SE DSZ412SE Avalanche Diode Replaces July 2000 version, DS5107-3.3 DS5107-4.0 October 2001 KEY PARAMETERS FEATURES • Double Side Cooling VRRM 4400V ■ High Surge Capability IF AV 219A ■ Avalanche Capability IFSM 1500A APPLICATIONS ■ Freewheel Diode
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DSZ412SE
DS5107-3
DS5107-4
DSZ412SE44
DSZ412SE
DSZ412SE44
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Untitled
Abstract: No abstract text available
Text: DSZ412SE41 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current230 @Temp (øC) (Test Condition)55ð V(RRM)(V) Rep.Pk.Rev. Voltage4.1k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.1.5k¥ V(FM) Max.(V) Forward Voltage2.1 @I(FM) (A) (Test Condition)300 @Temp. (øC) (Test Condition)25#
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DSZ412SE41
Current230
Current10m
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Untitled
Abstract: No abstract text available
Text: DSZ412SE40 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current230 @Temp (øC) (Test Condition)55ð V(RRM)(V) Rep.Pk.Rev. Voltage4.0k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.1.5k¥ V(FM) Max.(V) Forward Voltage2.1 @I(FM) (A) (Test Condition)300 @Temp. (øC) (Test Condition)25#
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DSZ412SE40
Current230
Current10m
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DSZ412SE
Abstract: DSZ412SE44 AN4839
Text: DSZ412SE DSZ412SE Avalanche Diode Replaces July 2000 version, DS5107-3.3 DS5107-4.0 October 2001 KEY PARAMETERS FEATURES • Double Side Cooling VRRM 4400V ■ High Surge Capability IF AV 219A ■ Avalanche Capability IFSM 1500A APPLICATIONS ■ Freewheel Diode
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DSZ412SE
DS5107-3
DS5107-4
DSZ412SE44
DSZ412SE
DSZ412SE44
AN4839
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Untitled
Abstract: No abstract text available
Text: DSZ412SE44 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current230 @Temp (øC) (Test Condition)55ð V(RRM)(V) Rep.Pk.Rev. Voltage4.4k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.1.5k¥ V(FM) Max.(V) Forward Voltage2.1 @I(FM) (A) (Test Condition)300 @Temp. (øC) (Test Condition)25#
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DSZ412SE44
Current230
Current10m
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DSZ412SE
Abstract: DSZ412SE44
Text: DSZ412SE DSZ412SE Avalanche Diode Replaces July 2000 version, DS5107-3.3 DS5107-4.0 October 2001 KEY PARAMETERS FEATURES • Double Side Cooling VRRM 4400V ■ High Surge Capability IF AV 219A ■ Avalanche Capability IFSM 1500A APPLICATIONS ■ Freewheel Diode
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DSZ412SE
DS5107-3
DS5107-4
DSZ412SE44
DSZ412SE
DSZ412SE44
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DSZ412SE
Abstract: DSZ412SE44
Text: DSZ412SE DSZ412SE Avalanche Diode Replaces July 2000 version, DS5107-3.3 DS5107-4.0 October 2001 KEY PARAMETERS FEATURES • Double Side Cooling VRRM 4400V ■ High Surge Capability IF AV 219A ■ Avalanche Capability IFSM 1500A APPLICATIONS ■ Freewheel Diode
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DSZ412SE
DS5107-3
DS5107-4
DSZ412SE44
DSZ412SE
DSZ412SE44
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Tag 225-600
Abstract: IGBT cross-reference SCR GTO fast diode 3000V tag 200-600 522.500. 5 x 20 mm HVDC plus scr phase control battery charger esm 30 450 v GTO thyristor Application notes
Text: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors 10 Bi-directional switches, choppers, dual switches, half bridges and single switches 3 Pulsed Power Capability 10 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half
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DS5766-4.
Tag 225-600
IGBT cross-reference
SCR GTO
fast diode 3000V
tag 200-600
522.500. 5 x 20 mm
HVDC plus
scr phase control battery charger
esm 30 450 v
GTO thyristor Application notes
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kpb 307
Abstract: KP8 500 KP9 1500 -12 KPd 1500 TEG KP5-600 THYRISTOR KP8 800 igbt types 6000v KP7 500 TBA 1240 ic teg thyristor
Text: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors Bi-directional switches, choppers, dual switches, half bridges and single switches 2 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half
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DS5766-4.
kpb 307
KP8 500
KP9 1500 -12
KPd 1500 TEG
KP5-600 THYRISTOR
KP8 800
igbt types 6000v
KP7 500
TBA 1240 ic
teg thyristor
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DCR2950W
Abstract: K1457 Tag 225-600 dim1200fss12 thyratron IGBT cross-reference DCR890F DSF110 igbt types 6000v DIM800DCS12-A
Text: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors 10 Bi-directional switches, choppers, dual switches, half bridges and single switches 3 Pulsed Power Capability 10 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half
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DS5766-4.
DCR2950W
K1457
Tag 225-600
dim1200fss12
thyratron
IGBT cross-reference
DCR890F
DSF110
igbt types 6000v
DIM800DCS12-A
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DCR2950W
Abstract: igbt types 6000v igbt sinewave inverter thyristor phase control 600v to 1600v DCR2630Y Tag 225-600 PT85QWX45 HVDC plus bi-directional switches IGBT GTO hvdc thyristor
Text: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors 10 Bi-directional switches, choppers, dual switches, half bridges and single switches 3 Pulsed Power Capability 10 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half
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DS5766-4.
DCR2950W
igbt types 6000v
igbt sinewave inverter
thyristor phase control 600v to 1600v
DCR2630Y
Tag 225-600
PT85QWX45
HVDC plus
bi-directional switches IGBT
GTO hvdc thyristor
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LT 7250
Abstract: No abstract text available
Text: M ITEL DSZ412SE Avalanche Diode SEMICONDUCTOR Supersedes Novem ber 1994, version 1.1 DS5107-2.0 FEATURES • Double Side Cooling. ■ High Surge Capability. ■ Avalanche Capability. December 1998 KEY PARAMETERS VRRM 4400V * 230A *fs m 1500A f a v APPLICATIONS
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DSZ412SE
DS5107-2
DS412SE44
LT 7250
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M303R
Abstract: im303 m303 DS412 DS502 DS912
Text: MARCONI CKT TECHNOLOGY 30E l> • 5783442 Q001721 T ■ " p OI-íí CONVERTER a A V A L A N C H E D IO D ES Series Type Stud Cathode Repetitive Peak Reverse Reverse Available Nonrepetltive Peak Reverse Voltage Peak Reverse Current at Tyj V RRM V VRSM V ! RM
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GG017E1
DS412
55hode
1535g
M303R
im303
m303
DS412
DS502
DS912
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31053A2
Abstract: BST45 17331A2 BSA45 30504A2 bsr45
Text: re c tifie r diodes discs D isc D evices v TO @ T VJ rT @ T vj RthQ-c pth c-hs) T v, @ T vl (kA) (A2sx103) (V) (mQ) (°C/W) fC/W ) (•C) 1205 9 405 0.75 0.25 0.07 0.02 175 11120t+ 6010 6639 17500 37.4 51.5 162 7000 8490 84500 0.6 0.6 0.6 0.872 0.0514 0.0225
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DS501ST*
sx103
RD33FG*
RD43FF*
RD65FV*
DS502ST*
3830TM
11120t+
DS2101SY*
DNB63*
31053A2
BST45
17331A2
BSA45
30504A2
bsr45
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DS412
Abstract: DS502 DS912 M303 34004 C 4385
Text: MARCONI CKT T E C H N O L O G Y 30E D • S7S3445 0001751 T ■ 'pCI-ÌÌ CONVERTER & AVALANCHE DIODES Series Type Stud Cathode Silicon Diameter Voltage Slud Anode Repetitive Peak Reverse Reverse Available Nonrepetttive Peak Reverse Voltage Peak Reverse Current
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57A3442
DD017S1
DS412
55ions
15948/A3
1535g
DS412
DS502
DS912
M303
34004
C 4385
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MP02X
Abstract: DCR10 DYNEX DG648 DCR1596SW DIM200PHM33
Text: a lp h a n u m e r ic p a r t lis t Part No. ACR300SG ACR400SE ACR44U DCR1002SF DCR1003SF DCR1006SF DCR1008SF DCR1020SF DCR1021SF DCR1374SBA DCR1375SBA DCR1376SBA DCR1474SY DCR1475SY DCR1476SY DCR1478SY DCR1574SY DCR1575SY DCR1576SY DCR1594SW DCR1595SW DCR1596SW
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ACR300SG
ACR400SE
ACR44U
DCR1002SF
DCR1003SF
DCR1006SF
DCR1008SF
DCR1020SF
DCR1021SF
DCR1374SBA
MP02X
DCR10
DYNEX
DG648
DCR1596SW
DIM200PHM33
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