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    Diotec Semiconductor AG MMDT5112W

    BIASED BJT SOT-323 PNP 22000OHM
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    TME MMDT5112W 2,973 20
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    DT5112 Datasheets Context Search

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    THDT5111

    Abstract: No abstract text available
    Text: THDT51 THDT65 TRISIL FOR SLIC PROTECTION . . . . FEATURES DUAL ASYMETRICAL TRANSIENT SUPPRESSOR PEAK PULSE CURRENT : IPP = 30 A, 10/1000 µs. HOLDING CURRENT = 150 mA min BREAKDOWN VOLTAGE - THDT51 = 51 V - THDT65 = 65 V. LOW DYNAMIC CHARACTERISTICS AVAILABLE IN SO8 AND DIL8.


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    THDT51 THDT65 THDT51 THDT5111 PDF

    trisil an overvoltage protection device

    Abstract: No abstract text available
    Text: THDT51 THDT65 SCS-THOMSON im TRISIL FOR SLIC PROTECTION FEATURES • DUAL ASYMETRICAL TRANSIENT SUPPRESSOR ■ PEAK PULSE CURRENT: Ip p = 30 A, 10/1000 |os. . HOLDING CURRENT = 150 m A m in ■ BREAKDOWN VOLTAGE -THDT51 =51 V -TH D T65 = 65 V. . LOW DYNAMIC CHARACTERISTICS


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    THDT51 THDT65 -THDT51 trisil an overvoltage protection device PDF

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    Abstract: No abstract text available
    Text: THDT51 THDT65 F Z J SG S-TUO M SO N ^ 7 M , lÄ ß Ä t lJ g T ß M D ß i TRISIL FOR SLIC PROTECTION FEATURES • DUAL ASYMETRICAL TRANSIENT SUPPRESSOR ■ PEAK PULSE CURRENT : Ipp = 30 A, 10/1000 [is. ■ HOLDING CURRENT = 150 mA min ■ BREAKDOWN VOLTAGE


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    THDT51 THDT65 -THDT51 THDT5112 THDT6512 DT5112 DT6512 THDT51 PDF