Pixel Circuit for AMOLED Displays
Abstract: CDRH4D28C-100NC amoled display ISL97702 mo-229 pad layout ISL97702IRZ ISL97702IRZ-T13 ISL97702IRZ-T7 amoled
Text: ISL97702 Data Sheet October 13, 2005 FN7462.0 Boost with Dual Reference Outputs Features The ISL97702 represents a high efficiency, boost converter with integrated boost FET, boost diode and input disconnect FET. A dual feedback circuit allows simple switching
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ISL97702
FN7462
ISL97702
500mA
Pixel Circuit for AMOLED Displays
CDRH4D28C-100NC
amoled display
mo-229 pad layout
ISL97702IRZ
ISL97702IRZ-T13
ISL97702IRZ-T7
amoled
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Untitled
Abstract: No abstract text available
Text: ISL97702 Data Sheet October 13, 2005 FN7462.0 Boost with Dual Reference Outputs Features The ISL97702 represents a high efficiency, boost converter with integrated boost FET, boost diode and input disconnect FET. A dual feedback circuit allows simple switching
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ISL97702
FN7462
ISL97702
500mA
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ISL97702
Abstract: ISL97702IRZ ISL97702IRZ-T13 ISL97702IRZ-T7 ld 33v 1/Detector/"Detector IC"/"CD"/OLED display circuit
Text: ISL97702 Data Sheet October 13, 2005 FN7462.0 Boost with Dual Reference Outputs Features The ISL97702 represents a high efficiency, boost converter with integrated boost FET, boost diode and input disconnect FET. A dual feedback circuit allows simple switching
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ISL97702
FN7462
ISL97702
500mA
ISL97702IRZ
ISL97702IRZ-T13
ISL97702IRZ-T7
ld 33v
1/Detector/"Detector IC"/"CD"/OLED display circuit
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ic at 1040a
Abstract: 1kW flyback PFC 10kw pfc 24v active clamp forward converter
Text: SC531 Triple Low-side FET Driver with Digitally Controlled Current Limit POWER MANAGEMENT Features Description Dual 2A Source, 4A Sink FET Drivers Second Channel Enable Independent Drive Supplies Auxiliary 2A Source, 4A Sink FET Driver
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SC531
SC531
ic at 1040a
1kW flyback PFC
10kw pfc
24v active clamp forward converter
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Untitled
Abstract: No abstract text available
Text: SC531 Triple Low-side FET Driver with Digitally Controlled Current Limit POWER MANAGEMENT Features Description Dual 2A Source, 4A Sink FET Drivers Second Channel Enable Independent Drive Supplies Auxiliary 2A Source, 4A Sink FET Driver
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SC531
MLPQ-UT-28
SC531
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FST3253
Abstract: IDT74FST3253
Text: IDT74FST3253 DUAL 4-BIT TO 1-BIT FET MULTIPLEXER/DEMULTIPLEXER INDUSTRIAL TEMPERATURE RANGE DUAL 4-BIT TO 1-BIT FET MULTIPLEXER/ DEMULTIPLEXER IDT74FST3253 FEATURES: DESCRIPTION: − − − − The FST3253 belongs to IDT's family of Bus switches. Bus switch
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IDT74FST3253
FST3253
SO16-1)
SO16-7)
IDT74FST3253
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KGF2236
Abstract: k2236 J0124 16PSSOP TA 8644 12943
Text: This version: Jul. 1998 Previous version: — E2Q0056-18-73 ¡ electronic components KGF2236 ¡ electronic components KGF2236 Dual Monolithic GaAs Power FET GENERAL DESCRIPTION The KGF2236, housed in a SMD-type plastic package, is a dual monolithic GaAs power FET that
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E2Q0056-18-73
KGF2236
KGF2236,
KGF2236
100000pF
k2236
J0124
16PSSOP
TA 8644
12943
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Untitled
Abstract: No abstract text available
Text: BUK9MHH-65PNN Dual TrenchPLUS FET Logic Level FET Rev. 01 — 11 May 2010 Objective data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode field-effect power transistor in SO20. Device is manufactured using NXP High-Performance Architecture HPA TrenchPLUS technology,
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BUK9MHH-65PNN
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D959
Abstract: d956 MS-013 SO20 FET E 102
Text: BUK9MHH-65PNN Dual TrenchPLUS FET Logic Level FET Rev. 03 — 18 June 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode field-effect power transistor in SO20. Device is manufactured using NXP High-Performance Architecture HPA TrenchPLUS technology,
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BUK9MHH-65PNN
D959
d956
MS-013
SO20
FET E 102
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MS-013
Abstract: SO20 transistor D607
Text: BUK9MFF-65PSS Dual TrenchPLUS FET Logic Level FET Rev. 04 — 17 June 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode field-effect power transistor in SO20. Device is manufactured using NXP High-Performance HPA TrenchPLUS technology, featuring
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BUK9MFF-65PSS
MS-013
SO20
transistor D607
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d933
Abstract: D932 BUK9MNN-65PKK MS-013 SO20 transistor D929
Text: BUK9MNN-65PKK Dual TrenchPLUS FET Logic Level FET Rev. 03 — 15 July 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode field-effect power transistor in SO20. Device is manufactured using NXP High-Performance HPA TrenchPLUS technology, featuring
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BUK9MNN-65PKK
d933
D932
BUK9MNN-65PKK
MS-013
SO20
transistor D929
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Untitled
Abstract: No abstract text available
Text: BUK9MJJ-65PLL Dual TrenchPLUS FET Logic Level FET Rev. 01 — 19 May 2010 Objective data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode field-effect power transistor in SO20. Device is manufactured using NXP High-Performance HPA TrenchPLUS technology, featuring
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BUK9MJJ-65PLL
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Untitled
Abstract: No abstract text available
Text: BUK9MRR-65PKK Dual TrenchPLUS FET Logic Level FET Rev. 02 — 17 June 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode field-effect power transistor in SO20. Device is manufactured using NXP High-Performance HPA TrenchPLUS technology, featuring
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BUK9MRR-65PKK
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ad918
Abstract: No abstract text available
Text: BUK9MPP-65PLL Dual TrenchPLUS FET Logic Level FET Rev. 01 — 27 May 2010 Objective data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode field-effect power transistor in SO20. Device is manufactured using NXP High-Performance HPA TrenchPLUS technology, featuring
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BUK9MPP-65PLL
ad918
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Untitled
Abstract: No abstract text available
Text: BUK9MFF-65PSS Dual TrenchPLUS FET Logic Level FET Rev. 04 — 17 June 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode field-effect power transistor in SO20. Device is manufactured using NXP High-Performance HPA TrenchPLUS technology, featuring
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BUK9MFF-65PSS
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D959 transistor
Abstract: No abstract text available
Text: BUK9MHH-65PNN Dual TrenchPLUS FET Logic Level FET Rev. 02 — 19 May 2010 Objective data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode field-effect power transistor in SO20. Device is manufactured using NXP High-Performance Architecture HPA TrenchPLUS technology,
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BUK9MHH-65PNN
D959 transistor
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Untitled
Abstract: No abstract text available
Text: BUK9MHH-65PNN Dual TrenchPLUS FET Logic Level FET Rev. 03 — 18 June 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode field-effect power transistor in SO20. Device is manufactured using NXP High-Performance Architecture HPA TrenchPLUS technology,
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BUK9MHH-65PNN
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transistor D756
Abstract: d756 D902 MS-013 SO20 TSP 200 d897 d905
Text: BUK9MRR-65PKK Dual TrenchPLUS FET Logic Level FET Rev. 02 — 17 June 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode field-effect power transistor in SO20. Device is manufactured using NXP High-Performance HPA TrenchPLUS technology, featuring
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BUK9MRR-65PKK
transistor D756
d756
D902
MS-013
SO20
TSP 200
d897
d905
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transistor D756
Abstract: transistor d830 D758 BUK9MTT-65PBB MS-013 SO20
Text: BUK9MTT-65PBB Dual TrenchPLUS FET Logic Level FET Rev. 02 — 17 June 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode field-effect power transistor in SO20. Device is manufactured using NXP High-Performance HPA TrenchPLUS technology, featuring
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BUK9MTT-65PBB
transistor D756
transistor d830
D758
BUK9MTT-65PBB
MS-013
SO20
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transistor D919
Abstract: d918 D919 MS-013 SO20 D913
Text: BUK9MPP-65PLL Dual TrenchPLUS FET Logic Level FET Rev. 03 — 15 July 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode field-effect power transistor in SO20. Device is manufactured using NXP High-Performance HPA TrenchPLUS technology, featuring
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BUK9MPP-65PLL
transistor D919
d918
D919
MS-013
SO20
D913
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Untitled
Abstract: No abstract text available
Text: BUK9MNN-65PKK Dual TrenchPLUS FET Logic Level FET Rev. 01 — 27 May 2010 Objective data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode field-effect power transistor in SO20. Device is manufactured using NXP High-Performance HPA TrenchPLUS technology, featuring
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BUK9MNN-65PKK
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AD609
Abstract: ad6082
Text: BUK9MFF-65PSS Dual TrenchPLUS FET Logic Level FET Rev. 03 — 31 May 2010 Preliminary data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode field-effect power transistor in SO20. Device is manufactured using NXP High-Performance HPA TrenchPLUS technology, featuring
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BUK9MFF-65PSS
AD609
ad6082
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PDF
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Untitled
Abstract: No abstract text available
Text: BUK9MJJ-65PLL Dual TrenchPLUS FET Logic Level FET Rev. 02 — 18 June 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode field-effect power transistor in SO20. Device is manufactured using NXP High-Performance HPA TrenchPLUS technology, featuring
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BUK9MJJ-65PLL
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transistor D756
Abstract: No abstract text available
Text: BUK9MRR-65PKK Dual TrenchPLUS FET Logic Level FET Rev. 01 — 28 May 2010 Objective data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode field-effect power transistor in SO20. Device is manufactured using NXP High-Performance HPA TrenchPLUS technology, featuring
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BUK9MRR-65PKK
transistor D756
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