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    DUAL FET DRIVER Search Results

    DUAL FET DRIVER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TB67B001BFTG Toshiba Electronic Devices & Storage Corporation Brushless Motor Driver/3 Phases Driver/Vout(V)=25/Iout(A)=3/Square Wave Visit Toshiba Electronic Devices & Storage Corporation
    TC78B011FTG Toshiba Electronic Devices & Storage Corporation Brushless Motor Driver/3 Phases Driver/Vout(V)=30/Square, Sine Wave Visit Toshiba Electronic Devices & Storage Corporation
    TB67B001AFTG Toshiba Electronic Devices & Storage Corporation Brushless Motor Driver/3 Phases Driver/Vout(V)=25/Iout(A)=3/Square Wave Visit Toshiba Electronic Devices & Storage Corporation
    TB67H451AFNG Toshiba Electronic Devices & Storage Corporation Brushed Motor Driver/1ch/Vout(V)=50/Iout(A)=3.5 Visit Toshiba Electronic Devices & Storage Corporation
    TB67H450AFNG Toshiba Electronic Devices & Storage Corporation Brushed Motor Driver/1ch/Vout(V)=50/Iout(A)=3.5 Visit Toshiba Electronic Devices & Storage Corporation

    DUAL FET DRIVER Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Pixel Circuit for AMOLED Displays

    Abstract: CDRH4D28C-100NC amoled display ISL97702 mo-229 pad layout ISL97702IRZ ISL97702IRZ-T13 ISL97702IRZ-T7 amoled
    Text: ISL97702 Data Sheet October 13, 2005 FN7462.0 Boost with Dual Reference Outputs Features The ISL97702 represents a high efficiency, boost converter with integrated boost FET, boost diode and input disconnect FET. A dual feedback circuit allows simple switching


    Original     		PDF ISL97702 FN7462 ISL97702 500mA Pixel Circuit for AMOLED Displays CDRH4D28C-100NC amoled display mo-229 pad layout ISL97702IRZ ISL97702IRZ-T13 ISL97702IRZ-T7 amoled

    Untitled

    Abstract: No abstract text available
    Text: ISL97702 Data Sheet October 13, 2005 FN7462.0 Boost with Dual Reference Outputs Features The ISL97702 represents a high efficiency, boost converter with integrated boost FET, boost diode and input disconnect FET. A dual feedback circuit allows simple switching


    Original     		PDF ISL97702 FN7462 ISL97702 500mA

    ISL97702

    Abstract: ISL97702IRZ ISL97702IRZ-T13 ISL97702IRZ-T7 ld 33v 1/Detector/"Detector IC"/"CD"/OLED display circuit
    Text: ISL97702 Data Sheet October 13, 2005 FN7462.0 Boost with Dual Reference Outputs Features The ISL97702 represents a high efficiency, boost converter with integrated boost FET, boost diode and input disconnect FET. A dual feedback circuit allows simple switching


    Original     		PDF ISL97702 FN7462 ISL97702 500mA ISL97702IRZ ISL97702IRZ-T13 ISL97702IRZ-T7 ld 33v 1/Detector/"Detector IC"/"CD"/OLED display circuit

    ic at 1040a

    Abstract: 1kW flyback PFC 10kw pfc 24v active clamp forward converter
    Text: SC531 Triple Low-side FET Driver with Digitally Controlled Current Limit POWER MANAGEMENT Features             Description Dual 2A Source, 4A Sink FET Drivers Second Channel Enable Independent Drive Supplies Auxiliary 2A Source, 4A Sink FET Driver


    Original     		PDF SC531 SC531 ic at 1040a 1kW flyback PFC 10kw pfc 24v active clamp forward converter

    Untitled

    Abstract: No abstract text available
    Text: SC531 Triple Low-side FET Driver with Digitally Controlled Current Limit POWER MANAGEMENT Features             Description Dual 2A Source, 4A Sink FET Drivers Second Channel Enable Independent Drive Supplies Auxiliary 2A Source, 4A Sink FET Driver


    Original     		PDF SC531 MLPQ-UT-28 SC531

    FST3253

    Abstract: IDT74FST3253
    Text: IDT74FST3253 DUAL 4-BIT TO 1-BIT FET MULTIPLEXER/DEMULTIPLEXER INDUSTRIAL TEMPERATURE RANGE DUAL 4-BIT TO 1-BIT FET MULTIPLEXER/ DEMULTIPLEXER IDT74FST3253 FEATURES: DESCRIPTION: − − − − The FST3253 belongs to IDT's family of Bus switches. Bus switch


    Original     		PDF IDT74FST3253 FST3253 SO16-1) SO16-7) IDT74FST3253

    KGF2236

    Abstract: k2236 J0124 16PSSOP TA 8644 12943
    Text: This version: Jul. 1998 Previous version: — E2Q0056-18-73 ¡ electronic components KGF2236 ¡ electronic components KGF2236 Dual Monolithic GaAs Power FET GENERAL DESCRIPTION The KGF2236, housed in a SMD-type plastic package, is a dual monolithic GaAs power FET that


    Original     		PDF E2Q0056-18-73 KGF2236 KGF2236, KGF2236 100000pF k2236 J0124 16PSSOP TA 8644 12943

    Untitled

    Abstract: No abstract text available
    Text: BUK9MHH-65PNN Dual TrenchPLUS FET Logic Level FET Rev. 01 — 11 May 2010 Objective data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode field-effect power transistor in SO20. Device is manufactured using NXP High-Performance Architecture HPA TrenchPLUS technology,


    Original     		PDF BUK9MHH-65PNN

    D959

    Abstract: d956 MS-013 SO20 FET E 102
    Text: BUK9MHH-65PNN Dual TrenchPLUS FET Logic Level FET Rev. 03 — 18 June 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode field-effect power transistor in SO20. Device is manufactured using NXP High-Performance Architecture HPA TrenchPLUS technology,


    Original     		PDF BUK9MHH-65PNN D959 d956 MS-013 SO20 FET E 102

    MS-013

    Abstract: SO20 transistor D607
    Text: BUK9MFF-65PSS Dual TrenchPLUS FET Logic Level FET Rev. 04 — 17 June 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode field-effect power transistor in SO20. Device is manufactured using NXP High-Performance HPA TrenchPLUS technology, featuring


    Original     		PDF BUK9MFF-65PSS MS-013 SO20 transistor D607

    d933

    Abstract: D932 BUK9MNN-65PKK MS-013 SO20 transistor D929
    Text: BUK9MNN-65PKK Dual TrenchPLUS FET Logic Level FET Rev. 03 — 15 July 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode field-effect power transistor in SO20. Device is manufactured using NXP High-Performance HPA TrenchPLUS technology, featuring


    Original     		PDF BUK9MNN-65PKK d933 D932 BUK9MNN-65PKK MS-013 SO20 transistor D929

    Untitled

    Abstract: No abstract text available
    Text: BUK9MJJ-65PLL Dual TrenchPLUS FET Logic Level FET Rev. 01 — 19 May 2010 Objective data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode field-effect power transistor in SO20. Device is manufactured using NXP High-Performance HPA TrenchPLUS technology, featuring


    Original     		PDF BUK9MJJ-65PLL

    Untitled

    Abstract: No abstract text available
    Text: BUK9MRR-65PKK Dual TrenchPLUS FET Logic Level FET Rev. 02 — 17 June 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode field-effect power transistor in SO20. Device is manufactured using NXP High-Performance HPA TrenchPLUS technology, featuring


    Original     		PDF BUK9MRR-65PKK

    ad918

    Abstract: No abstract text available
    Text: BUK9MPP-65PLL Dual TrenchPLUS FET Logic Level FET Rev. 01 — 27 May 2010 Objective data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode field-effect power transistor in SO20. Device is manufactured using NXP High-Performance HPA TrenchPLUS technology, featuring


    Original     		PDF BUK9MPP-65PLL ad918

    Untitled

    Abstract: No abstract text available
    Text: BUK9MFF-65PSS Dual TrenchPLUS FET Logic Level FET Rev. 04 — 17 June 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode field-effect power transistor in SO20. Device is manufactured using NXP High-Performance HPA TrenchPLUS technology, featuring


    Original     		PDF BUK9MFF-65PSS

    D959 transistor

    Abstract: No abstract text available
    Text: BUK9MHH-65PNN Dual TrenchPLUS FET Logic Level FET Rev. 02 — 19 May 2010 Objective data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode field-effect power transistor in SO20. Device is manufactured using NXP High-Performance Architecture HPA TrenchPLUS technology,


    Original     		PDF BUK9MHH-65PNN D959 transistor

    Untitled

    Abstract: No abstract text available
    Text: BUK9MHH-65PNN Dual TrenchPLUS FET Logic Level FET Rev. 03 — 18 June 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode field-effect power transistor in SO20. Device is manufactured using NXP High-Performance Architecture HPA TrenchPLUS technology,


    Original     		PDF BUK9MHH-65PNN

    transistor D756

    Abstract: d756 D902 MS-013 SO20 TSP 200 d897 d905
    Text: BUK9MRR-65PKK Dual TrenchPLUS FET Logic Level FET Rev. 02 — 17 June 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode field-effect power transistor in SO20. Device is manufactured using NXP High-Performance HPA TrenchPLUS technology, featuring


    Original     		PDF BUK9MRR-65PKK transistor D756 d756 D902 MS-013 SO20 TSP 200 d897 d905

    transistor D756

    Abstract: transistor d830 D758 BUK9MTT-65PBB MS-013 SO20
    Text: BUK9MTT-65PBB Dual TrenchPLUS FET Logic Level FET Rev. 02 — 17 June 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode field-effect power transistor in SO20. Device is manufactured using NXP High-Performance HPA TrenchPLUS technology, featuring


    Original     		PDF BUK9MTT-65PBB transistor D756 transistor d830 D758 BUK9MTT-65PBB MS-013 SO20

    transistor D919

    Abstract: d918 D919 MS-013 SO20 D913
    Text: BUK9MPP-65PLL Dual TrenchPLUS FET Logic Level FET Rev. 03 — 15 July 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode field-effect power transistor in SO20. Device is manufactured using NXP High-Performance HPA TrenchPLUS technology, featuring


    Original     		PDF BUK9MPP-65PLL transistor D919 d918 D919 MS-013 SO20 D913

    Untitled

    Abstract: No abstract text available
    Text: BUK9MNN-65PKK Dual TrenchPLUS FET Logic Level FET Rev. 01 — 27 May 2010 Objective data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode field-effect power transistor in SO20. Device is manufactured using NXP High-Performance HPA TrenchPLUS technology, featuring


    Original     		PDF BUK9MNN-65PKK

    AD609

    Abstract: ad6082
    Text: BUK9MFF-65PSS Dual TrenchPLUS FET Logic Level FET Rev. 03 — 31 May 2010 Preliminary data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode field-effect power transistor in SO20. Device is manufactured using NXP High-Performance HPA TrenchPLUS technology, featuring


    Original     		PDF BUK9MFF-65PSS AD609 ad6082

    Untitled

    Abstract: No abstract text available
    Text: BUK9MJJ-65PLL Dual TrenchPLUS FET Logic Level FET Rev. 02 — 18 June 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode field-effect power transistor in SO20. Device is manufactured using NXP High-Performance HPA TrenchPLUS technology, featuring


    Original     		PDF BUK9MJJ-65PLL

    transistor D756

    Abstract: No abstract text available
    Text: BUK9MRR-65PKK Dual TrenchPLUS FET Logic Level FET Rev. 01 — 28 May 2010 Objective data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode field-effect power transistor in SO20. Device is manufactured using NXP High-Performance HPA TrenchPLUS technology, featuring


    Original     		PDF BUK9MRR-65PKK transistor D756