marking code L2
Abstract: BF1203 MBL254 8203 dual mosfet mosfet k 9047 mosfet 7503 sot363 Marking DS NXP 9033 transistor
Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage MBD128 BF1203 Dual N-channel dual gate MOS-FET Product specification Supersedes data of 2000 Dec 04 2001 Apr 25 NXP Semiconductors Product specification Dual N-channel dual gate MOS-FET FEATURES BF1203
|
Original
|
MBD128
BF1203
OT363
R77/03/pp20
marking code L2
BF1203
MBL254
8203 dual mosfet
mosfet k 9047
mosfet 7503
sot363 Marking DS NXP
9033 transistor
|
PDF
|
BF1203
Abstract: FET MARKING CODE 8203 dual mosfet
Text: DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage MBD128 BF1203 Dual N-channel dual gate MOS-FET Product specification Supersedes data of 2000 Dec 04 2001 Apr 25 Philips Semiconductors Product specification Dual N-channel dual gate MOS-FET FEATURES BF1203
|
Original
|
MBD128
BF1203
OT363
613512/03/pp20
BF1203
FET MARKING CODE
8203 dual mosfet
|
PDF
|
BF1204
Abstract: amplifier BF1204 mosfet handbook Dual Gate MOSFET graphs MCD960
Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage MBD128 BF1204 Dual N-channel dual gate MOS-FET Product specification Supersedes data of 2001 Apr 25 2010 Sep 16 NXP Semiconductors Product specification Dual N-channel dual gate MOS-FET FEATURES BF1204
|
Original
|
MBD128
BF1204
OT363
R77/03/pp13
BF1204
amplifier BF1204
mosfet handbook
Dual Gate MOSFET graphs
MCD960
|
PDF
|
9033 transistor
Abstract: BF1203
Text: DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage MBD128 BF1203 Dual N-channel dual gate MOS-FET Product specification Supersedes data of 2000 Jun 06 2000 Dec 04 Philips Semiconductors Product specification Dual N-channel dual gate MOS-FET FEATURES BF1203
|
Original
|
MBD128
BF1203
OT363
613512/02/pp20
9033 transistor
BF1203
|
PDF
|
MARKING 5F SOT363
Abstract: BF1204 FET MARKING CODE km 1667
Text: DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage MBD128 BF1204 Dual N-channel dual gate MOS-FET Product specification Supersedes data of 2000 Nov 13 2001 Apr 25 Philips Semiconductors Product specification Dual N-channel dual gate MOS-FET FEATURES BF1204
|
Original
|
MBD128
BF1204
OT363
613512/02/pp12
MARKING 5F SOT363
BF1204
FET MARKING CODE
km 1667
|
PDF
|
TRANSISTOR BF1204
Abstract: BF1204
Text: DISCRETE SEMICONDUCTORS DAT handbook, halfpage MBD128 BF1204 Dual N-channel dual gate MOS-FET Product specification Supersedes data of 2001 Apr 25 2010 Sep 16 NXP Semiconductors Product specification Dual N-channel dual gate MOS-FET FEATURES BF1204 PINNING - SOT363
|
Original
|
MBD128
BF1204
OT363
R77/03/pp13
TRANSISTOR BF1204
BF1204
|
PDF
|
BF1203,115
Abstract: BF1203
Text: DISCRETE SEMICONDUCTORS DAT handbook, halfpage MBD128 BF1203 Dual N-channel dual gate MOS-FET Product specification Supersedes data of 2000 Dec 04 2001 Apr 25 NXP Semiconductors Product specification Dual N-channel dual gate MOS-FET FEATURES BF1203 PINNING - SOT363
|
Original
|
MBD128
BF1203
OT363
R77/03/pp20
BF1203,115
BF1203
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT handbook, halfpage MBD128 BF1205 Dual N-channel dual gate MOS-FET Product specification 2003 Sep 30 NXP Semiconductors Product specification Dual N-channel dual gate MOS-FET FEATURES BF1205 PINNING - SOT363 • Two low noise gain controlled amplifiers in a single
|
Original
|
MBD128
BF1205
OT363
R77/01/pp25
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 BF1102R Dual N-channel dual gate MOS-FET Preliminary specification 2000 Jan 06 Philips Semiconductors Preliminary specification Dual N-channel dual gate MOS-FET BF1102R PINNING - SOT363 FEATURES • Two low noise gain controlled amplifiers in a single
|
Original
|
MBD128
BF1102R
115102/00/02/pp12
|
PDF
|
MOSFET 4466
Abstract: 4466 8 pin mosfet pin voltage dual sot363 BF1102 mosfet 1412 dual gate mosfet MGS365 marking code AL mosfet handbook
Text: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage MBD128 BF1102 Dual N-channel dual gate MOS-FET Preliminary specification 1999 Jul 08 Philips Semiconductors Preliminary specification Dual N-channel dual gate MOS-FET BF1102 PINNING - SOT363 FEATURES • Two low noise gain controlled amplifiers in a single
|
Original
|
MBD128
BF1102
OT363
125004/00/01/pp12
MOSFET 4466
4466 8 pin mosfet pin voltage
dual sot363
BF1102
mosfet 1412
dual gate mosfet
MGS365
marking code AL
mosfet handbook
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT handbook, halfpage MBD128 BF1206 Dual N-channel dual-gate MOS-FET Product specification 2003 Nov 17 NXP Semiconductors Product specification Dual N-channel dual-gate MOS-FET FEATURES BF1206 PINNING - SOT363 • Two low noise gain controlled amplifiers in a single
|
Original
|
MBD128
BF1206
OT363
R77/01/pp22
|
PDF
|
00941
Abstract: BF1205
Text: DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage MBD128 BF1205 Dual N-channel dual gate MOS-FET Product specification 2003 Sep 30 Philips Semiconductors Product specification Dual N-channel dual gate MOS-FET FEATURES BF1205 PINNING - SOT363 • Two low noise gain controlled amplifiers in a single
|
Original
|
MBD128
BF1205
OT363
SCA75
R77/01/pp24
00941
BF1205
|
PDF
|
BF1203
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage MBD128 BF1203 Dual N-channel dual gate MOS-FET Preliminary specification 2000 May 29 Philips Semiconductors Preliminary specification Dual N-channel dual gate MOS-FET FEATURES BF1203 PINNING - SOT363 • Two low noise gain controlled amplifiers in a single
|
Original
|
MBD128
BF1203
125004/00/01/pp8
|
PDF
|
AN 7591 POWER AMPLIFIER
Abstract: an 7591 BF1206 an 7591 power amp dual-gate
Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage MBD128 BF1206 Dual N-channel dual-gate MOS-FET Product specification 2003 Nov 17 NXP Semiconductors Product specification Dual N-channel dual-gate MOS-FET FEATURES BF1206 PINNING - SOT363 • Two low noise gain controlled amplifiers in a single
|
Original
|
MBD128
BF1206
OT363
R77/01/pp22
AN 7591 POWER AMPLIFIER
an 7591
BF1206
an 7591 power amp
dual-gate
|
PDF
|
|
|
00941
Abstract: dual gate fet BF1205 mosfet handbook
Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage MBD128 BF1205 Dual N-channel dual gate MOS-FET Product specification 2003 Sep 30 NXP Semiconductors Product specification Dual N-channel dual gate MOS-FET FEATURES BF1205 PINNING - SOT363 • Two low noise gain controlled amplifiers in a single
|
Original
|
MBD128
BF1205
OT363
R77/01/pp25
00941
dual gate fet
BF1205
mosfet handbook
|
PDF
|
philips power mosfet
Abstract: km 1667 BF1204
Text: DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage MBD128 BF1204 Dual N-channel dual gate MOS-FET Product specification 2000 Nov 13 Philips Semiconductors Product specification Dual N-channel dual gate MOS-FET FEATURES BF1204 PINNING - SOT363 • Two low noise gain controlled amplifiers in a single
|
Original
|
MBD128
BF1204
613512/01/pp12
philips power mosfet
km 1667
|
PDF
|
BF996S
Abstract: marking code cig dual-gate
Text: DISCRETE SEMICONDUCTORS DATA SHEET BF996S N-channel dual-gate MOS-FET Product specification April 1991 NXP Semiconductors Product specification N-channel dual-gate MOS-FET BF996S FEATURES DESCRIPTION • Protected against excessive input voltage surges by
|
Original
|
BF996S
OT143
R77/02/pp8
BF996S
marking code cig
dual-gate
|
PDF
|
58a 6PIN
Abstract: DUAL FET 8PIN
Text: POWER&RF Drain-common dual Nch power MOS FET ドレインコモンデュアルNチャネルパワーMOS FET TKM2502Y HSON3030-8 DESCRIPTION The TKM2502Y type is a drain-common dual Nch power MOS FET. Featuring excellent on-resistor performance, it is suitable
|
Original
|
TKM2502Y
HSON3030-8)
TKM2502Y
TKM2502YNch
HSON3030-8
58a 6PIN
DUAL FET 8PIN
|
PDF
|
BF992
Abstract: bf992 application Silicon N-Channel Dual Gate MOS-FET
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D071 BF992 Silicon N-channel dual gate MOS-FET Product specification Supersedes data of 1996 Jul 30 1999 Aug 11 Philips Semiconductors Product specification Silicon N-channel dual gate MOS-FET APPLICATIONS BF992 PINNING
|
Original
|
M3D071
BF992
OT143B
125004/03/pp12
BF992
bf992 application
Silicon N-Channel Dual Gate MOS-FET
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT BF998WR N-channel dual-gate MOS-FET Product specification Supersedes data of 1995 Apr 25 1997 Sep 05 NXP Semiconductors Product specification N-channel dual-gate MOS-FET BF998WR FEATURES PINNING • High forward transfer admittance
|
Original
|
BF998WR
R77/02/pp13
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT BF908WR N-channel dual-gate MOS-FET Preliminary specification 1995 Apr 25 NXP Semiconductors Preliminary specification N-channel dual-gate MOS-FET BF908WR FEATURES PINNING • High forward transfer admittance Short channel transistor with high forward transfer
|
Original
|
BF908WR
R77/01/pp9
|
PDF
|
BF998WR
Abstract: dual-gate
Text: DISCRETE SEMICONDUCTORS DATA SHEET BF998WR N-channel dual-gate MOS-FET Product specification Supersedes data of 1995 Apr 25 1997 Sep 05 NXP Semiconductors Product specification N-channel dual-gate MOS-FET BF998WR FEATURES PINNING • High forward transfer admittance
|
Original
|
BF998WR
R77/02/pp13
BF998WR
dual-gate
|
PDF
|
PMWD16UN
Abstract: No abstract text available
Text: PMWD16UN Dual N-channel µTrenchMOS ultra low level FET Rev. 02 — 24 March 2005 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS™ technology.
|
Original
|
PMWD16UN
PMWD16UN
|
PDF
|
MOSFET 4466
Abstract: 4466 8 pin mosfet pin voltage 4466 mosfet
Text: DISCRETE SEMICONDUCTORS BITÂ SyiIT BF1102 Dual N-channel dual gate MOS-FET Preliminary specification Philips Sem iconductors 1999 May 17 PHILIPS Philips Semiconductors Preliminary specification Dual N-channel dual gate MOS-FET BF1102 PINNING - SOT363 FEATURES
|
OCR Scan
|
BF1102
OT363
BF1102
MOSFET 4466
4466 8 pin mosfet pin voltage
4466 mosfet
|
PDF
|
