95160
Abstract: MOSFET 9935 003 SOT363 Dual Gate MOSFET graphs TMF3201J Dual-Gate Mosfet 9935 mosfet 95160 3
Text: Preliminary Specification TMF3201J Dual N-Channel Dual-Gate MOSFET □ Description SOT363 Unit in mm The TMF3201J is an N-channel enhancement type, dual-insulated gate, field-effect transistor that utilizes MOS construction. It is consists of two equal dual gate MOSFET amplifiers with
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TMF3201J
OT363
TMF3201J
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95160
MOSFET 9935
003 SOT363
Dual Gate MOSFET graphs
Dual-Gate Mosfet
9935 mosfet
95160 3
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Untitled
Abstract: No abstract text available
Text: TMF3201J Semiconductor Dual Gate MOSFET □ Description SOT-363 Unit in mm The TMF3201J is an N-channel enhancement type, dual-insulated gate, field-effect transistor that utilizes MOS construction. It consists of two equal dual gate MOSFET amplifiers with shared
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TMF3201J
OT-363
TMF3201J
OT-363
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MARKING CODE Zi sot363
Abstract: TMF3201J ZI Marking Code transistor MOSFET 9935
Text: TMF3201J Semiconductor Dual Gate MOSFET □ Description The TMF3201J is an N-channel enhancement type, dual- SOT-363 insulated gate, field-effect transistor that utilizes MOS Unit in mm construction. It consists of two equal dual gate MOSFET amplifiers with shared source and gate2 leads. The source
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TMF3201J
TMF3201J
OT-363
OT-363
KSD-A5S001-000
MARKING CODE Zi sot363
ZI Marking Code transistor
MOSFET 9935
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br 8764
Abstract: 13-AMPLIFIER BF1210
Text: BF1210 Dual N-channel dual gate MOSFET Rev. 01 — 25 October 2006 Product data sheet 1. Product profile 1.1 General description The BF1210 is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads. The source and substrate are interconnected. Internal bias circuits enable
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BF1210
BF1210
OT363
br 8764
13-AMPLIFIER
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br 8764
Abstract: marking 822 sot363 6710 mosfet sp 9753 BF1214 sc 6700 N-CHANNEL dual gate ultra low noise vhf AMPLIFIER
Text: BF1214 Dual N-channel dual gate MOSFET Rev. 01 — 30 October 2007 Product data sheet 1. Product profile 1.1 General description The BF1214 is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads. The source and substrate are interconnected. Internal bias circuits enable
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BF1214
OT363
br 8764
marking 822 sot363
6710 mosfet
sp 9753
sc 6700
N-CHANNEL dual gate ultra low noise vhf AMPLIFIER
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Untitled
Abstract: No abstract text available
Text: BF1216 Dual N-channel dual gate MOSFET Rev. 01 — 29 April 2010 Product data sheet 1. Product profile 1.1 General description The BF1216 is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads. The source and substrate are interconnected. Internal bias circuits enable DC stabilization
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bf1216
Abstract: Dual Gate MOSFET graphs dual gate mosfet in vhf amplifier SC-88 M5t transistor M5W
Text: BF1216 Dual N-channel dual gate MOSFET Rev. 01 — 29 April 2010 Product data sheet 1. Product profile 1.1 General description The BF1216 is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads. The source and substrate are interconnected. Internal bias circuits enable DC stabilization
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BF1216
OT363
Dual Gate MOSFET graphs
dual gate mosfet in vhf amplifier
SC-88 M5t
transistor M5W
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K 2611 MOSFET
Abstract: K 2611 MOSFET VOLTAGE RATING mosFET K 2611 9439 2n BF1206F Shortform Data and Cross References Mosfet UHF transistor handbook
Text: BF1206F Dual N-channel dual gate MOSFET Rev. 01 — 30 January 2006 Product data sheet 1. Product profile 1.1 General description The BF1206F is a combination of two different dual gate MOSFET amplifiers with shared source and gate2 leads. The source and substrate are interconnected. Internal bias circuits enable Direct Current
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OT666
K 2611 MOSFET
K 2611 MOSFET VOLTAGE RATING
mosFET K 2611
9439 2n
Shortform Data and Cross References Mosfet
UHF transistor handbook
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Untitled
Abstract: No abstract text available
Text: BF1207 Dual N-channel dual gate MOSFET Rev. 2 — 7 September 2011 Product data sheet 1. Product profile 1.1 General description The BF1207 is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads and an integrated switch. The source and substrate are interconnected. Internal bias circuits enable Direct Current
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BF1207
Abstract: No abstract text available
Text: BF1207 Dual N-channel dual gate MOSFET Rev. 01 — 28 July 2005 Product data sheet 1. Product profile 1.1 General description The BF1207 is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads and an integrated switch. The source and substrate are interconnected. Internal bias circuits enable Direct Current
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MSC895
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K 2611 MOSFET
Abstract: mosFET K 2611 K 2611 MOSFET VOLTAGE RATING 2N 8565
Text: SO T6 66 BF1206F Dual N-channel dual gate MOSFET Rev. 2 — 7 September 2011 Product data sheet 1. Product profile 1.1 General description The BF1206F is a combination of two different dual gate MOSFET amplifiers with shared source and gate2 leads. The source and substrate are interconnected. Internal bias circuits enable Direct Current
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BF1206F
OT666
K 2611 MOSFET
mosFET K 2611
K 2611 MOSFET VOLTAGE RATING
2N 8565
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hg1b
Abstract: marking 822 sot363
Text: BF1207 Dual N-channel dual gate MOSFET Rev. 2 — 7 September 2011 Product data sheet 1. Product profile 1.1 General description The BF1207 is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads and an integrated switch. The source and substrate are interconnected. Internal bias circuits enable Direct Current
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BF1207
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hg1b
marking 822 sot363
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Untitled
Abstract: No abstract text available
Text: SO T6 66 BF1206F Dual N-channel dual gate MOSFET Rev. 2 — 7 September 2011 Product data sheet 1. Product profile 1.1 General description The BF1206F is a combination of two different dual gate MOSFET amplifiers with shared source and gate2 leads. The source and substrate are interconnected. Internal bias circuits enable Direct Current
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OT666
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8203 dual mosfet
Abstract: MCP14700-E/MF diagram of IC 8203 MCP14700 PIC32 PICC-18 dual mosfet 3X3 package DSAE003323
Text: MCP14700 Dual Input Synchronous MOSFET Driver Features General Description • Independent PWM Input Control for High-Side and Low-Side Gate Drive • Input Logic Level Threshold 3.0V TTL Compatible • Dual Output MOSFET Drive for Synchronous Applications
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MCP14700
MCP14700
DS22201A-page
8203 dual mosfet
MCP14700-E/MF
diagram of IC 8203
PIC32
PICC-18
dual mosfet 3X3 package
DSAE003323
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MCP87000
Abstract: motor control code c pwm with pic
Text: MCP14700 Dual Input Synchronous MOSFET Driver Features: General Description: • Ideally suited to drive low Figure-of-Merit FOM MOSFETs such as Microchip’s MCP87000 MOSFET family • Independent PWM Input Control for High-Side and Low-Side Gate Drive
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MCP87000
MCP14700
synchr778-366
DS22201B-page
motor control
code c pwm with pic
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KMB7D0DN40QA
Abstract: KMB7D0DN
Text: SEMICONDUCTOR KMB7D0DN40QA TECHNICAL DATA Dual N-Ch Trench MOSFET GENERAL DESCRIPTION This planer stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for portable equipment and SMPS.
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KMB7D0DN
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KMB6D0DN30QA
Abstract: No abstract text available
Text: SEMICONDUCTOR KMB6D0DN30QA TECHNICAL DATA Dual N-Ch Trench MOSFET GENERAL DESCRIPTION This planer stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for portable equipment and SMPS.
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100ms
KMB6D0DN30QA
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Untitled
Abstract: No abstract text available
Text: CSD75207W15 www.ti.com SLPS418 – JUNE 2013 Dual P-Channel NexFET Power MOSFET Check for Samples: CSD75207W15 FEATURES 1 • • • • • • • Dual P-Ch MOSFETs Common Source Configuration Small Footprint 1.5-mm x 1.5-mm Gate-Source Voltage Clamp
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SLPS418
JESD22-A114
CSD75207W15
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Untitled
Abstract: No abstract text available
Text: CSD75207W15 www.ti.com SLPS418 – JUNE 2013 Dual P-Channel NexFET Power MOSFET Check for Samples: CSD75207W15 FEATURES 1 • • • • • • • Dual P-Ch MOSFETs Common Source Configuration Small Footprint 1.5-mm x 1.5-mm Gate-Source Voltage Clamp
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p0109
Abstract: No abstract text available
Text: CSD75207W15 www.ti.com SLPS418 – JUNE 2013 Dual P-Channel NexFET Power MOSFET Check for Samples: CSD75207W15 FEATURES 1 • • • • • • • Dual P-Ch MOSFETs Common Source Configuration Small Footprint 1.5-mm x 1.5-mm Gate-Source Voltage Clamp
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JESD22-A114
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p0109
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1/AN6069
Abstract: No abstract text available
Text: FAN3268 2 A Low-Voltage PMOS-NMOS Bridge Driver Features Description • • The FAN3268 dual 2 A gate driver is optimized to drive a high-side P-channel MOSFET and a low-side Nchannel MOSFET in motor control applications operating from a voltage rail up to 18 V. The driver has
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LTC3810H-5
Abstract: gate drivers ic LTC3810-5 LTC3810E-5 LTC3810I-5 MBR1100 Si7450DP ZXMN10A07F LTC3810HUH-5 LTC3810
Text: LTC3810-5 60V Current Mode Synchronous Switching Regulator Controller Description Features High Voltage Operation: Up to 60V n Large 1Ω Gate Drivers n No Current Sense Resistor Required n Dual N-Channel MOSFET Synchronous Drive n Extremely Fast Transient Response
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100ns
TSSOP-16E
LTC3703
100kHz
600kHz,
93VIN,
SSOP-16,
SSOP-28
LT3845A
LTC3810H-5
gate drivers ic
LTC3810-5
LTC3810E-5
LTC3810I-5
MBR1100
Si7450DP
ZXMN10A07F
LTC3810HUH-5
LTC3810
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MOSFET 7121
Abstract: 9935 mosfet
Text: BF1217WR N-channel dual gate MOSFET Rev. 1 — 3 August 2010 Product data sheet 1. Product profile 1.1 General description Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive
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OT343R
MOSFET 7121
9935 mosfet
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Untitled
Abstract: No abstract text available
Text: BF1217WR N-channel dual gate MOSFET Rev. 2 — 20 June 2011 Product data sheet 1. Product profile 1.1 General description Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive
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