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    DUAL GATE MOSFET VHF AMPLIFIER Search Results

    DUAL GATE MOSFET VHF AMPLIFIER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    DUAL GATE MOSFET VHF AMPLIFIER Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistors mos

    Abstract: No abstract text available
    Text: 3N212 Dual Gate Mosfet VHF Amplifier N-Channel - Depletion 26.98 Transistors MOS. Page 1 of 1 Enter Your Part # Home Part Number: 3N212 Online Store 3N212 Diodes Dual Gate Mosfet VHF Amplifier(N -Channel - Depletion) Transistors Integrated Circuits Optoelectronics


    Original     		PDF 3N212 3N212 com/3n212 transistors mos

    3N211

    Abstract: Depletion
    Text: 3N211 Dual Gate Mosfet VHF Amplifier N-Channel - Depletion 8.59 Transistors MOSF. Page 1 of 1 Enter Your Part # Home Part Number: 3N211 Online Store 3N211 Diodes Dual Gate Mosfet VHF Amplifier(N -Channel - Depletion) Transistors Integrated Circuits Optoelectronics


    Original     		PDF 3N211 3N211 com/3n211 Depletion

    Untitled

    Abstract: No abstract text available
    Text: NTE454 MOSFET, N–Ch, Dual Gate, TV UHF/RF Amp, Gate Protected Description: The NTE454 is a depletion mode dual gate MOSFET transistor designed for VHF amplifier and mixer applications. Features: D Low Reverse Transfer Capacitance – Crss = 0.03pf Max


    Original     		PDF NTE454 NTE454 20Vdc 30Vdc 200MHZ

    NTE454

    Abstract: 200MHZ VG15
    Text: NTE454 MOSFET, N–Ch, Dual Gate, TV UHF/RF Amp, Gate Protected Description: The NTE454 is a depletion mode dual gate MOSFET transistor designed for VHF amplifier and mixer applications. Features: D Low Reverse Transfer Capacitance – Crss = 0.03pf Max


    Original     		PDF NTE454 NTE454 20Vdc 30Vdc 200MHZ 200MHZ VG15

    Untitled

    Abstract: No abstract text available
    Text: DIGITRON SEMICONDUCTORS 3N201-3N203 DUAL GATE MOSFET VHF AMPLIFIER MAXIMUM RATINGS Rating Drain-source voltage Symbol Value Unit VDS 25 Vdc 30 Vdc 50 mAdc ±10 mAdc VDG1 Drain-gate voltage VDG2 Drain current ID IG1 Gate current IG2 Total device dissipation @ TA = 25°C


    Original     		PDF 3N201-3N203 MIL-PRF-19500,

    NTE221

    Abstract: depletion MOSFET riss
    Text: NTE221 MOSFET Dual Gate, N–Channel for VHF TV Receivers Applications Description: The NTE221 is an N–channel depletion type, dual–insulated gate, field–effect transistor that utilizes MOS construction. This device has characteristics which makes it highly desirable for use in RF–amplifier applications.


    Original     		PDF NTE221 NTE221 depletion MOSFET riss

    3SK180

    Abstract: No abstract text available
    Text: Ordering number:ENN2129B N-Channel Silicon MOSFET Dual Gate 3SK180 High-Frequency General-Purpose Amplifier Applications Applications Package Dimensions • FM tuners and VHF tuners. unit:mm 2046A Features [3SK180] · High power gain and low noise figure.


    Original     		PDF ENN2129B 3SK180 3SK180] 3SK180

    k 2129 MOSFET

    Abstract: 3SK180
    Text: Ordering number:ENN2129B N-Channel Silicon MOSFET Dual Gate 3SK180 High-Frequency General-Purpose Amplifier Applications Applications Package Dimensions • FM tuners and VHF tuners. unit:mm 2046A Features [3SK180] · High power gain and low noise figure.


    Original     		PDF ENN2129B 3SK180 3SK180] k 2129 MOSFET 3SK180

    82599

    Abstract: No abstract text available
    Text: 3SK263 Ordering number : EN4423C SANYO Semiconductors DATA SHEET 3SK263 N-Channel Silicon MOSFET Dual Gate FM Tuner, VHF Tuner, High-Frequency Amplifier Applications Features • • • Enhancement type Small noise figure Small cross modulation Specifications


    Original     		PDF EN4423C 3SK263 014A-006 3SK263-5-TG-E SC-61, 82599

    3SK263

    Abstract: 82599TH
    Text: Ordering number:ENN4423A N-Channel Silicon MOSFET Dual Gate 3SK263 FM Tuner, VHF Tuner, High-Frequency Amplifier Applications Features Package Dimensions • Enhancement type. · Small noise figure. · Small cross modulation. unit:mm 2096A [3SK263] 0.5 1.9


    Original     		PDF ENN4423A 3SK263 3SK263] 3SK263 82599TH

    Untitled

    Abstract: No abstract text available
    Text: BG3230_BG3230R 4 5 DUAL N-Channel MOSFET Tetrode 6 • Low noise gain controlled input stages of UHFand VHF-tuners with 5V supply voltage • Two AGC amplifiers in one single package 1 • Integrated stabilized bias network • Integrated gate protection diodes


    Original     		PDF BG3230 BG3230R BG3230 VPS05604 EHA07215 OT363

    3SK236

    Abstract: No abstract text available
    Text: 3SK236 Silicon N–Channel Dual Gate MOSFET Application CMPAK-4 VHF RF amplifier Features 2 • Excellent cross modulation characteristics • Capable of low voltage operation 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain Table 1 Absolute Maximum Ratings Ta = 25°C


    Original     		PDF 3SK236 3SK236

    BCR108S

    Abstract: BG3230 mosfet 2g2
    Text: BG3230 DUAL N-Channel MOSFET Tetrode • Low noise gain controlled input stages of UHF4 5 6 and VHF-tuners with 5V supply voltage • Two AGC amplifiers in one single package 1 2 3 • Integrated stabilized bias network • Integrated gate protection diodes


    Original     		PDF BG3230 OT363 BCR108S BG3230 mosfet 2g2

    Untitled

    Abstract: No abstract text available
    Text: BG3230_BG3230R DUAL N-Channel MOSFET Tetrode • Low noise gain controlled input stages of UHF4 5 6 and VHF-tuners with 5V supply voltage • Two AGC amplifiers in one single package 1 2 3 • Integrated stabilized bias network • Integrated gate protection diodes


    Original     		PDF BG3230 BG3230R OT363

    BG3230

    Abstract: BG3230R VPS05604
    Text: BG3230_BG3230R 4 DUAL N-Channel MOSFET Tetrode 5 6 • Low noise gain controlled input stages of UHFand VHF-tuners with 5V supply voltage • Two AGC amplifiers in one single package 2 • Integrated stabilized bias network 3 1 VPS05604 • Integrated gate protection diodes


    Original     		PDF BG3230 BG3230R VPS05604 BG3230 EHA07215 OT363 Feb-27-2004 BG3230R VPS05604

    BG3230

    Abstract: BG3230R VPS05604
    Text: BG3230_BG3230R 4 DUAL N-Channel MOSFET Tetrode 5 6 • Low noise gain controlled input stages of UHFand VHF-tuners with 5V supply voltage • Two AGC amplifiers in one single package 2 • Integrated stabilized bias network 3 1 VPS05604 • Integrated gate protection diodes


    Original     		PDF BG3230 BG3230R VPS05604 BG3230 EHA07215 OT363 BG3230R VPS05604

    BCR108S

    Abstract: BG3230 BG3230R mosfet 2g2 marking code 4D marking G2s
    Text: BG3230_BG3230R DUAL N-Channel MOSFET Tetrode • Low noise gain controlled input stages of UHF- 4 5 6 and VHF-tuners with 5V supply voltage 1 • Two AGC amplifiers in one single package 2 3 • Integrated stabilized bias network • Integrated gate protection diodes


    Original     		PDF BG3230 BG3230R BG3230 OT363 BCR108S BG3230R mosfet 2g2 marking code 4D marking G2s

    Untitled

    Abstract: No abstract text available
    Text: BG3230_BG3230R 4 DUAL N-Channel MOSFET Tetrode 5 6 • Low noise gain controlled input stages of UHFand VHF-tuners with 5V supply voltage • Two AGC amplifiers in one single package 2 • Integrated stabilized bias network 3 1 VPS05604 • Integrated gate protection diodes


    Original     		PDF BG3230 BG3230R BG3230 VPS05604 EHA07215 OT363

    3SK237

    Abstract: No abstract text available
    Text: 3SK237 Silicon N–Channel Dual Gate MOSFET Application CMPAK-4 UHF/VHF RF amplifier Features 2 • High gain and low niose • Capable of low voltage operation 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain Table 1 Absolute Maximum Ratings Ta = 25°C Item Symbol


    Original     		PDF 3SK237 3SK237

    BG3130

    Abstract: BG3130R VPS05604 3D SOT363
    Text: BG3130. 4 DUAL N-Channel MOSFET Tetrode 5 6 • Two gain controlled input stage for UHF and VHF -tuners e.g. NTSC, PAL • Two AGC amplifiers in one single package 3 2 • Integrated gate protection diodes 1 VPS05604 • High AGC-range, low noise figure, high gain


    Original     		PDF BG3130. VPS05604 BG3130 BG3130R EHA07461 OT363 Feb-27-2004 BG3130 BG3130R VPS05604 3D SOT363

    Untitled

    Abstract: No abstract text available
    Text: BG3130. DUAL N-Channel MOSFET Tetrode • Two gain controlled input stage for UHF 4 5 6 and VHF -tuners e.g. NTSC, PAL • Two AGC amplifiers in one single package 1 2 3 • Integrated gate protection diodes • High AGC-range, low noise figure, high gain


    Original     		PDF BG3130. BG3130 BG3130R OT363

    Untitled

    Abstract: No abstract text available
    Text: BG3130. 4 DUAL N-Channel MOSFET Tetrode 5 6 • Two gain controlled input stage for UHF and VHF -tuners e.g. NTSC, PAL • Two AGC amplifiers in one single package 3 2 • Integrated gate protection diodes 1 VPS05604 • High AGC-range, low noise figure, high gain


    Original     		PDF BG3130. BG3130 VPS05604 BG3130R EHA07461 BG3130 OT363

    marking K1 sot363

    Abstract: No abstract text available
    Text: BG3130. DUAL N-Channel MOSFET Tetrode • Two gain controlled input stage for UHF 4 5 6 and VHF -tuners e.g. NTSC, PAL 1 • Two AGC amplifiers in one single package 2 3 • Integrated gate protection diodes • High AGC-range, low noise figure, high gain


    Original     		PDF BG3130. BG3130 BG3130R EHA07461 OT363 OT363 marking K1 sot363

    Untitled

    Abstract: No abstract text available
    Text: HITACHI 3SK236-Silicon N-Channel Dual Gate MOSFET Application CMPAK-4 VHF RF amplifier Features 2 m r' • Excellent cross modulation characteristics • Capable of low voltage operation 4 1 . Source 2. Gatel 3. Gate2 4. Drain Table 1 Absolute Maximum Ratings Ta = 25°C


    OCR Scan     		PDF 3SK236----------Silicon 3SK236