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    DUAL GATE SOT323 Search Results

    DUAL GATE SOT323 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DFE2016CKA-1R0M=P2 Murata Manufacturing Co Ltd Fixed IND 1uH 1800mA NONAUTO Visit Murata Manufacturing Co Ltd
    LQW18CN55NJ0HD Murata Manufacturing Co Ltd Fixed IND 55nH 1500mA POWRTRN Visit Murata Manufacturing Co Ltd
    LQW18CNR56J0HD Murata Manufacturing Co Ltd Fixed IND 560nH 450mA POWRTRN Visit Murata Manufacturing Co Ltd
    DFE322520F-2R2M=P2 Murata Manufacturing Co Ltd Fixed IND 2.2uH 4400mA NONAUTO Visit Murata Manufacturing Co Ltd
    LQW18CN4N9D0HD Murata Manufacturing Co Ltd Fixed IND 4.9nH 2600mA POWRTRN Visit Murata Manufacturing Co Ltd

    DUAL GATE SOT323 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2907A PNP bipolar transistors

    Abstract: BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 450 pnp diode S6 78A transistors bf 517 BFG sot89 BC 327 SOT 23 BAS20 SOT23 DIODE TA 70/04 bcp 846
    Text: Selection Guide RF-Transistors and MMICs MOS Field-Effect Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Dual-Gate GaAs FETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3


    Original     		O-92d 2907A PNP bipolar transistors BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 450 pnp diode S6 78A transistors bf 517 BFG sot89 BC 327 SOT 23 BAS20 SOT23 DIODE TA 70/04 bcp 846 PDF

    transistors BC 543

    Abstract: 183W Diode BAW 62 BCR191P SOT23 BCV 27 TRANSISTOR BC 530 sot-23 p1 diode S6 78A mmic amplifier sot-89 p4 diode sot 143 s5
    Text: Selection Guide RF-Transistors and MMICs MOS Field-Effect Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Dual-Gate GaAs FETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2


    Original     		OT-23 OT-363 OT-143 transistors BC 543 183W Diode BAW 62 BCR191P SOT23 BCV 27 TRANSISTOR BC 530 sot-23 p1 diode S6 78A mmic amplifier sot-89 p4 diode sot 143 s5 PDF

    Untitled

    Abstract: No abstract text available
    Text: AO7800 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO7800 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V, in the small SOT323 footprint. It can be used for a wide


    Original     		AO7800 AO7800 OT323 AO7800L SC-70-6 PDF

    Untitled

    Abstract: No abstract text available
    Text: AO7801 Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO7801 uses advanced trench technology to provide excellent RDS ON , low gate charge, and operation with gate voltages as low as 1.8V, in the small SOT323 footprint. It can be used for a wide


    Original     		AO7801 AO7801 OT323 71893ABAC PDF

    AO7801

    Abstract: SC-70-6 D06A
    Text: AO7801 Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO7801 uses advanced trench technology to provide excellent RDS ON , low gate charge, and operation with gate voltages as low as 1.8V, in the small SOT323 footprint. It can be used for a wide


    Original     		AO7801 AO7801 OT323 AO7801L SC-70-6 D06A PDF

    AO7800L

    Abstract: AO7800 SC-70-6 09A SOT323
    Text: AO7800 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO7800 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V, in the small SOT323 footprint. It can be used for a wide


    Original     		AO7800 AO7800 OT323 AO7800L SC-70-6 OT-323) Top00 SC-70-6 09A SOT323 PDF

    AO7800

    Abstract: AO7800L SC-70-6
    Text: AO7800 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO7800 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 1.8V, in the small SOT323 footprint. It can be used for a wide


    Original     		AO7800 AO7800 OT323 AO7800L SC-70-6 OT-323) Top00 SC-70-6 PDF

    Untitled

    Abstract: No abstract text available
    Text: AO7801 Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO7801 uses advanced trench technology to provide excellent RDS ON , low gate charge, and operation with gate voltages as low as 1.8V, in the small SOT323 footprint. It can be used for a wide


    Original     		AO7801 AO7801 OT323 SC-70-6 OT-323) PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N7002ZW Preliminary Power MOSFET 300m Amps, 60 Volts DUAL N-CHANNEL ENHANCEMENT MODE MOSFET „ DESCRIPTION The UTC 2N7002ZW uses advanced technology to provide excellent RDS ON , low gate charge and low gate voltages during


    Original     		2N7002ZW 2N7002ZW 2N7002ZWL-AL3-R 2N7002ZWG-AL3-R OT-323 QW-R502-539 PDF

    AO7801

    Abstract: ao7801l SC-70-6 D06A
    Text: Rev 3: June 2005 AO7801 Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO7801 uses advanced trench technology to provide excellent RDS ON , low gate charge, and operation with gate voltages as low as 1.8V, in the small SOT323 footprint. It can be used for a wide


    Original     		AO7801 AO7801 OT323 AO7801L SC-70-6 D06A PDF

    2N7002ZW

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N7002ZW Power MOSFET 300mA, 60V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET „ DESCRIPTION The UTC 2N7002ZW uses advanced technology to provide excellent RDS ON , low gate charge and low gate voltages during operation. This device is suitable for use as a load switch or in PWM


    Original     		2N7002ZW 300mA, 2N7002ZW 2N7002ZWL-AL3-R 2N7002ZWG-AL3-R OT-323 QW-R502-539 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N7002ZW Power MOSFET 300mA, 60V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET „ DESCRIPTION The UTC 2N7002ZW uses advanced technology to provide excellent RDS ON , low gate charge and low gate voltages during operation. This device is suitable for use as a load switch or in PWM


    Original     		2N7002ZW 300mA, 2N7002ZW 2N7002ZWL-AL3-R 2N7002ZWG-AL3-R OT-323 QW-R502-539 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2N7002ZW Power MOSFET 300mA, 60V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET  DESCRIPTION The UTC 2N7002ZW uses advanced technology to provide excellent RDS ON , low gate charge and low gate voltages during operation. This device is suitable for use as a load switch or in PWM


    Original     		2N7002ZW 300mA, 2N7002ZW 2N7002ZWL-AL3-R 2N7002ZWG-AL3-R OT-323 QW-R502-539 PDF

    2SK2396A

    Abstract: NEC 2SK2396A k2396a pc1658 2SC2407 P10100EJ6V0SG00 UAA 1006 k2396 K2597 Marking Code SAW MOS transistor
    Text: SILICON MICROWAVE SEMICONDUCTORS Silicon discrete, Silicon MMIC Dual gate GaAs FET SELECTION GUIDE 1999/2000 6th Edition [MEMO] 2 Selection Guide P10100EJ6V0SG00 • The information in this document is based on documents issued in October,1999 at the latest. The


    Original     		P10100EJ6V0SG00 2SK2396A NEC 2SK2396A k2396a pc1658 2SC2407 P10100EJ6V0SG00 UAA 1006 k2396 K2597 Marking Code SAW MOS transistor PDF

    ssop-5 footprint

    Abstract: SOT753 footprint sot59 us8 Package SOT353 footprint AN10161 MO178 SC70-5 SC74A SC88A
    Text: INTEGRATED CIRCUITS ABSTRACT Different suppliers have introduced single-, dual-, and triple-gate devices, with many different names. This application note discusses the different call-outs for the various packages and provides the reader with a comparison of the drawings from different vendors.


    Original     		AN10161 ssop-5 footprint SOT753 footprint sot59 us8 Package SOT353 footprint AN10161 MO178 SC70-5 SC74A SC88A PDF

    SSOP5-P-0-65A

    Abstract: AN10161 MO178 MO-203 SC59 SC70-5 SC74A SC88A philips naming convention philips package designator
    Text: INTEGRATED CIRCUITS ABSTRACT Different suppliers have introduced single-, dual-, and triple-gate devices, with many different names. This application note discusses the different call-outs for the various packages and provides the reader with a comparison of the drawings from different vendors.


    Original     		AN10161 SSOP5-P-0-65A AN10161 MO178 MO-203 SC59 SC70-5 SC74A SC88A philips naming convention philips package designator PDF

    Untitled

    Abstract: No abstract text available
    Text: 74V2T132 DUAL 2-INPUT SHMITT TRIGGER NAND GATE PRELIMINARY DATA • ■ ■ ■ ■ ■ ■ HIGH SPEED: tPD = 3.7 ns TYP. at VCC = 5V LOW POWER DISSIPATION: ICC = 1 µA (MAX.) at TA=25°C TYPICAL HYSTERESIS : 0.8V at VCC = 4.5V SYMMETRICAL OUTPUT IMPEDANCE:


    Original     		74V2T132 OT23-8L OT323-8L OT23-8L OT323-8L 74V2T132STR 74V2T132CTR 74V2T132 74V2T00 74V2ronics. PDF

    Untitled

    Abstract: No abstract text available
    Text: 74V2T132 DUAL 2-INPUT SHMITT TRIGGER NAND GATE PRELIMINARY DATA • ■ ■ ■ ■ ■ ■ HIGH SPEED: tPD = 3.7 ns TYP. at VCC = 5V LOW POWER DISSIPATION: ICC = 1 µA (MAX.) at TA=25°C TYPICAL HYSTERESIS : 0.8V at VCC = 4.5V SYMMETRICAL OUTPUT IMPEDANCE:


    Original     		74V2T132 OT23-8L OT323-8L OT23-8L OT323-8L 74V2T132STR 74V2T132CTR 74V2T132 74V2T00 74V2ronics. PDF

    74V2T00

    Abstract: 74V2T132 74V2T132CTR 74V2T132STR
    Text: 74V2T132 DUAL 2-INPUT SHMITT TRIGGER NAND GATE PRELIMINARY DATA • ■ ■ ■ ■ ■ ■ HIGH SPEED: tPD = 3.7 ns TYP. at VCC = 5V LOW POWER DISSIPATION: ICC = 1 µA (MAX.) at TA=25°C TYPICAL HYSTERESIS : 0.8V at VCC = 4.5V SYMMETRICAL OUTPUT IMPEDANCE:


    Original     		74V2T132 74V2T132 74V2T00 74V2T132CTR 74V2T132STR PDF

    74V2T08CTR

    Abstract: 74V2T08STR 74V2T32
    Text: 74V2T32 DUAL 2-INPUT OR GATE PRELIMINARY DATA • ■ ■ ■ ■ ■ ■ HIGH SPEED: tPD = 4.6ns TYP. at VCC = 5V LOW POWER DISSIPATION: ICC = 1µA(MAX.) at TA=25°C COMPATIBLE WITH TTL OUTPUTS: VIH = 2V (MIN), VIL = 0.8V (MAX) POWER DOWN PROTECTION ON INPUTS


    Original     		74V2T32 74V2T32 74V2T08CTR 74V2T08STR PDF

    74V2T00

    Abstract: 74V2T00CTR 74V2T00STR
    Text: 74V2T00 DUAL 2-INPUT NAND GATE PRELIMINARY DATA • ■ ■ ■ ■ ■ ■ HIGH SPEED: tPD = 5ns TYP. at VCC = 5V LOW POWER DISSIPATION: ICC = 1µA(MAX.) at TA=25°C COMPATIBLE WITH TTL OUTPUTS: VIH = 2V (MIN), VIL = 0.8V (MAX) POWER DOWN PROTECTION ON INPUTS


    Original     		74V2T00 74V2T00 74V2T00CTR 74V2T00STR PDF

    Untitled

    Abstract: No abstract text available
    Text: 74V2G03 DUAL 2-INPUT OPEN DRAIN NAND GATE PRELIMINARY DATA • ■ ■ ■ ■ ■ HIGH SPEED: tPD = 3.9ns TYP. at VCC = 5V LOW POWER DISSIPATION: ICC = 1µA(MAX.) at TA=25°C HIGH NOISE IMMUNITY: VNIH = V NIL = 28% VCC (MIN.) POWER DOWN PROTECTION ON INPUTS


    Original     		74V2G03 OT23-8L OT323-8L OT23-8L OT323-8L 74V2G03STR 74V2G03CTR 74V2G03 PDF

    74V2G00

    Abstract: 74V2G132 74V2G132CTR 74V2G132STR
    Text: 74V2G132 DUAL 2-INPUT SHMITT TRIGGER NAND GATE PRELIMINARY DATA • ■ ■ ■ ■ ■ ■ ■ HIGH SPEED: tPD = 3.0ns TYP. at VCC = 5V LOW POWER DISSIPATION: ICC = 1µA(MAX.) at TA=25°C TYPICAL HYSTERESIS: VH = 800mV at VCC = 4.5V VH = 500mV at VCC = 3.0V


    Original     		74V2G132 800mV 500mV 74V2G132 74V2G00 74V2G132CTR 74V2G132STR PDF

    diode S6 78A

    Abstract: TRANSISTOR PNP BA RT SOT 89 mmic CEA SOT363 32N45 transistor 6bw TRANSISTOR BC 545 BF1012S 6bw sot-23 up 6103 s8 6bw 12 transistor
    Text: SIEM EN S Selection Guide RF-Transistors and MMICs MOS Field-Effect Dual-Gate GaAs FETs. 14


    OCR Scan     		O-92tl O-92d diode S6 78A TRANSISTOR PNP BA RT SOT 89 mmic CEA SOT363 32N45 transistor 6bw TRANSISTOR BC 545 BF1012S 6bw sot-23 up 6103 s8 6bw 12 transistor PDF