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    DUAL GENERAL PURPOSE AMPLIFIER TRANSISTOR Search Results

    DUAL GENERAL PURPOSE AMPLIFIER TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    DUAL GENERAL PURPOSE AMPLIFIER TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2C746

    Abstract: No abstract text available
    Text: GENERAL PURPOSE DUAL SILICON NPN TRANSISTOR 2C746 • Dual Silicon Planar Transistor • Hermetic TO77 MO-002AF Metal Package. • Ideally suited for General Purpose, AC and Transducer Amplifier and DC Amplifier Applications ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)


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    PDF 2C746 MO-002AF) 500mW 600mW 2C746

    2C746

    Abstract: No abstract text available
    Text: GENERAL PURPOSE DUAL SILICON NPN TRANSISTOR 2C746 • Dual Silicon Planar Transistor • Hermetic TO77 MO-002AF Metal Package. • Ideally suited for General Purpose, AC and Transducer Amplifier and DC Amplifier Applications ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)


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    PDF 2C746 MO-002AF) 500mW 600mW 2C746

    MMDT2907A

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MMDT2907A Preliminary DUAL TRANSISTOR NPN & PNP GENERAL PURPOSE AMPLIFIER „ DESCRIPTION The UTC MMDT2907A is an NPN & PNP general purpose amplifier. it’s suitable for a medium power amplifier and switch requiring collector currents up to 500mA.


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    PDF MMDT2907A MMDT2907A 500mA. MMDT2907AL-AL6-R MMDT2907AG-AL6-R MMDT2227AL-AL6-R OT-363 QW-R218-028

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MMDT2227 Preliminary DUAL TRANSISTOR NPN & PNP GENERAL PURPOSE AMPLIFIER „ DESCRIPTION The UTC MMDT2227 is an NPN & PNP general purpose amplifier. it’s suitable for a medium power amplifier and switch requiring collector currents up to 500mA.


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    PDF MMDT2227 MMDT2227 500mA. 150mA/15mA, 300mA/30mA MMDT2227L-AL6-R MMDT2227G-AL6-R OT-363 QW-R218-019

    DUAL TRANSISTOR

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MMDT2227 DUAL TRANSISTOR NPN & PNP GENERAL PURPOSE AMPLIFIER  DESCRIPTION The UTC MMDT2227 is an NPN & PNP general purpose amplifier. it’s suitable for a medium power amplifier and switch requiring collector currents up to 600mA.


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    PDF MMDT2227 MMDT2227 600mA. 150mA -150mA -15mA MMBT2222A MMBT2907A MMDT2227G-AL6-R OT-363 DUAL TRANSISTOR

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MMDT2227 DUAL TRANSISTOR NPN & PNP GENERAL PURPOSE AMPLIFIER  DESCRIPTION The UTC MMDT2227 is an NPN & PNP general purpose amplifier. it’s suitable for a medium power amplifier and switch requiring collector currents up to 600mA.


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    PDF MMDT2227 MMDT2227 600mA. 150mA -150mA -15mA MMBT2222A MMBT2907A MMDT2227L-AL6-R MMDT2227G-AL6-R

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MMDT2227 Preliminary DUAL TRANSISTOR NPN & PNP GENERAL PURPOSE AMPLIFIER „ DESCRIPTION The UTC MMDT2227 is an NPN & PNP general purpose amplifier. it’s suitable for a medium power amplifier and switch requiring collector currents up to 500mA.


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    PDF MMDT2227 MMDT2227 500mA. 150mA/15mA, 300mA/30mA MMDT2227L-AL6-R MMDT2227G-AL6-R MMDT2227L-AL6-R OT-363 QW-R218-019

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MMDT2907A Preliminary DUAL TRANSISTOR NPN & PNP GENERAL PURPOSE AMPLIFIER  DESCRIPTION The UTC MMDT2907A is an NPN & PNP general purpose amplifier. it’s suitable for a medium power amplifier and switch requiring collector currents up to 500mA.


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    PDF MMDT2907A MMDT2907A 500mA. MMDT2907AG-AL6-R OT-363 QW-R218-028

    BC858CDXV6T1

    Abstract: BC858CDXV6T1G BC858CDXV6T5 BC858CDXV6T5G
    Text: BC858CDXV6T1, BC858CDXV6T5 Dual General Purpose Transistor PNP Dual http://onsemi.com This transistor is designed for general purpose amplifier applications. It is housed in the SOT−563 which is designed for low power surface mount applications. 3 (2)


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    PDF BC858CDXV6T1, BC858CDXV6T5 OT-563 BC858CDXV6T1/D BC858CDXV6T1 BC858CDXV6T1G BC858CDXV6T5 BC858CDXV6T5G

    Untitled

    Abstract: No abstract text available
    Text: EMZ1DXV6T1, EMZ1DXV6T5 Dual General Purpose Transistors NPN/PNP Dual Complimentary http://onsemi.com This transistor is designed for general purpose amplifier applications. It is housed in the SOT−563 which is designed for low power surface mount applications.


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    PDF OT-563

    Untitled

    Abstract: No abstract text available
    Text: BC858CDXV6T1, BC858CDXV6T5 Dual General Purpose Transistor PNP Dual http://onsemi.com This transistor is designed for general purpose amplifier applications. It is housed in the SOT−563 which is designed for low power surface mount applications. 3 (2)


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    PDF BC858CDXV6T1, BC858CDXV6T5 BC858CDXV6T1/D

    Untitled

    Abstract: No abstract text available
    Text: EMZ1DXV6T1, EMZ1DXV6T5 Dual General Purpose Transistors NPN/PNP Dual Complementary http://onsemi.com This transistor is designed for general purpose amplifier applications. It is housed in the SOT−563 which is designed for low power surface mount applications.


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    PDF

    transistor marking t05

    Abstract: No abstract text available
    Text: EMZ1DXV6T1, EMZ1DXV6T5 Dual General Purpose Transistors NPN/PNP Dual Complementary http://onsemi.com This transistor is designed for general purpose amplifier applications. It is housed in the SOT−563 which is designed for low power surface mount applications.


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    PDF OT-563 transistor marking t05

    BC847BPDXV6T1

    Abstract: BC847BPDXV6T5
    Text: BC847BPDXV6T1, BC847BPDXV6T5 Dual General Purpose Transistor NPN/PNP Dual Complimentary http://onsemi.com This transistor is designed for general purpose amplifier applications. It is housed in the SOT-563 which is designed for low power surface mount applications.


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    PDF BC847BPDXV6T1, BC847BPDXV6T5 OT-563 BC847BPDX6T1 BC847CBPDXV6T1/D BC847BPDXV6T1 BC847BPDXV6T5

    EMX2DXV6T5G

    Abstract: No abstract text available
    Text: EMX2DXV6T5 Preferred Devices Dual NPN General Purpose Amplifier Transistor This NPN transistor is designed for general purpose amplifier applications. This device is housed in the SOT-563 package which is designed for low power surface mount applications, where board


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    PDF OT-563 EMX2DXV6T5G

    Untitled

    Abstract: No abstract text available
    Text: EMX2DXV6T5 Preferred Devices Dual NPN General Purpose Amplifier Transistor This NPN transistor is designed for general purpose amplifier applications. This device is housed in the SOT-563 package which is designed for low power surface mount applications, where board


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    PDF OT-563

    transistor marking t05

    Abstract: No abstract text available
    Text: EMT1DXV6T1, EMT1DXV6T5 Dual General Purpose Transistor PNP Dual http://onsemi.com This transistor is designed for general purpose amplifier applications. It is housed in the SOT−563 which is designed for low power surface mount applications. 3 (2) (1)


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    PDF OT-563 transistor marking t05

    Untitled

    Abstract: No abstract text available
    Text: EMT1DXV6T1, EMT1DXV6T5 Dual General Purpose Transistor PNP Dual http://onsemi.com This transistor is designed for general purpose amplifier applications. It is housed in the SOT−563 which is designed for low power surface mount applications. 3 (2) (1)


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    PDF

    marking us sot-563

    Abstract: No abstract text available
    Text: EMT1DXV6T1, EMT1DXV6T5 Dual General Purpose Transistor PNP Dual This transistor is designed for general purpose amplifier applications. It is housed in the SOT−563 which is designed for low power surface mount applications. • Lead−Free Solder Plating


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    PDF OT-563 marking us sot-563

    marking us sot-563

    Abstract: No abstract text available
    Text: EMT1DXV6T1, EMT1DXV6T5 Dual General Purpose Transistor PNP Dual This transistor is designed for general purpose amplifier applications. It is housed in the SOT−563 which is designed for low power surface mount applications. • Lead−Free Solder Plating


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    PDF OT-563 marking us sot-563

    GSM LNA

    Abstract: 5Ghz lna transistor datasheet RF2363 4201 SOT-8 PIN 8c122
    Text: RF2363 Preliminary 4 DUAL-BAND 3V LOW NOISE AMPLIFIER Typical Applications • GSM/DCS Dual-Band Handsets • General Purpose Amplification • Cellular/PCS Dual-Band Handsets • Commercial and Consumer Systems Product Description 4 GENERAL PURPOSE AMPLIFIERS


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    PDF RF2363 RF2363 950MHz 1850MHz 900MHz 1900MHz GSM LNA 5Ghz lna transistor datasheet 4201 SOT-8 PIN 8c122

    NST1009XV6T1

    Abstract: NST1009XV6T5 marking code sot563
    Text: NST1009XV6T1, NST1009XV6T5 Product Preview Dual General Purpose Transistors http://onsemi.com NPN/PNP Dual Complimentary This transistor is designed for general purpose amplifier applications. It is housed in the SOT−563 which is designed for low power surface mount applications.


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    PDF NST1009XV6T1, NST1009XV6T5 OT-563 OT-563not NST1009XV6/D NST1009XV6T1 NST1009XV6T5 marking code sot563

    Untitled

    Abstract: No abstract text available
    Text: EMZ1DXV6T1, EMZ1DXV6T5 Product Preview Dual General Purpose Transistors http://onsemi.com NPN/PNP Dual Complimentary This transistor is designed for general purpose amplifier applications. It is housed in the SOT−563 which is designed for low power surface mount applications.


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    PDF OT-563 OT-563

    MHQ2222

    Abstract: MHQ2221 MPQ2222 2N2218 2N2222 MPQ2221 MP02222 2N2218 transistor NS 6 W 183 T KH 2222
    Text: MHQ2221, MHQ2222 SILICON MPQ2221, MPQ2222 QUAD DUAL IN-LINE NPN SILICON ANNULAR GENERAL-PURPOSE TRANSISTORS QUAD DUAL-IN-LINE NPN SILICON GENERAL-PURPOSE TRANSISTORS . . Designed for general-purpose switching circuits and D C to V H F amplifier applications.


    OCR Scan
    PDF MHQ2221, MHQ2222 MPQ2221, MPQ2222 MHQ2222 MHQ2221 MPQ2222 2N2218 2N2222 MPQ2221 MP02222 2N2218 transistor NS 6 W 183 T KH 2222