IRF5820
Abstract: SI3443DV IRF5800 IRF5850
Text: PD - 93947A IRF5850 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS = -20V RDS on = 0.135Ω Top View Description These P-channel MOSFETs from International Rectifier
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3947A
IRF5850
IRF5850
OT-23
IRF5820
SI3443DV
IRF5800
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IRF5850
Abstract: No abstract text available
Text: PD - 93947 IRF5850 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS = -20V RDS on = 0.135Ω Top View Description These P-channel MOSFETs from International Rectifier
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IRF5850
IRF5850
OT-23
i252-7105
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IRF7328
Abstract: No abstract text available
Text: PD -94000 IRF7328 HEXFET Power MOSFET ● ● ● ● Trench Technology Ultra Low On-Resistance Dual P-Channel MOSFET Available in Tape & Reel VDSS -30V RDS on max ID 21mΩ@VGS = -10V -8.0A 32mΩ@VGS = -4.5V -6.8A Description New trench HEXFET® Power MOSFETs from
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IRF7328
ie52-7105
IRF7328
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IRF7901D1
Abstract: No abstract text available
Text: PD - 93844 IRF7901D1 PROVISIONAL DATASHEET Dual FETKYTM • Co-Packaged Dual N-channel HEXFET Power MOSFET and Schottky Diode • Ideal for Synchronous Buck dc-dc converters up to 5A peak output • Low Conduction Losses • Low Switching Losses • Low VF Schottky Rectifier
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IRF7901D1
IRF7901D1
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IRF7342
Abstract: No abstract text available
Text: PD -91859 IRF7342 HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance l Dual P-Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description l l VDSS = -55V RDS on = 0.105Ω Fifth Generation HEXFETs from International Rectifier
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IRF7342
IRF7342
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IPS042G
Abstract: No abstract text available
Text: Preliminary Data Sheet No.PD 60153-G IPS042G DUAL FULLY PROTECTED POWER MOSFET SWITCH Features • · · · · Product Summary Over temperature shutdown Over current shutdown Active clamp Low current & logic level input E.S.D protection Description The IPS042G is a fully protected dual low side SMART
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60153-G
IPS042G
IPS042G
165oC
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4.5v to 100v input regulator
Abstract: No abstract text available
Text: PD -94030 IRF7752 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Dual N-Channel MOSFET Very Small SOIC Package Low Profile < 1.1mm Available in Tape & Reel VDSS 30V RDS(on) max ID 0.030@VGS = 10V 4.6A 0.036@VGS = 4.5V 3.9A Description HEXFET® power MOSFETs from International Rectifier
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IRF7752
4.5v to 100v input regulator
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Untitled
Abstract: No abstract text available
Text: PD -91865 IRF7555 PRELIMINARY HEXFET Power MOSFET Trench Technology ● Ultra Low On-Resistance ● Dual P-Channel MOSFET ● Very Small SOIC Package ● Low Profile <1.1mm ● Available in Tape & Reel ● 1 8 D1 G1 2 7 D1 S2 3 6 D2 4 5 D2 S1 G2 VDSS = -20V
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IRF7555
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EIA-541
Abstract: IRF7751 TSSOP-8 footprint 7702 ST irf 146
Text: PD - 94002 IRF7751 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile < 1.2mm Available in Tape & Reel VDSS RDS(on) max ID -30V 35mΩ@VGS = -10V 55mΩ@VGS = -4.5V -4.5A -3.8A Description HEXFET® power MOSFETs from International Rectifier
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IRF7751
EIA-541
IRF7751
TSSOP-8 footprint
7702 ST
irf 146
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IRF7509
Abstract: No abstract text available
Text: PD - 91270J IRF7509 HEXFET Power MOSFET ● ● ● ● ● ● ● Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Very Small SOIC Package Low Profile <1.1mm Available in Tape & Reel Fast Switching S1 G1 S2 G2 N-C HANNE L M O S F E T
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91270J
IRF7509
IRF7509
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IRF7342
Abstract: No abstract text available
Text: PD -91859 IRF7342 HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance l Dual P-Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description l l S1 G1 S2 G2 1 8 D1 2 7 D1 3 6 4 5 VDSS = -55V
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IRF7342
IRF7342
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p-channel 250V 30A power mosfet
Abstract: No abstract text available
Text: PD -91865A IRF7555 HEXFET Power MOSFET Trench Technology ● Ultra Low On-Resistance ● Dual P-Channel MOSFET ● Very Small SOIC Package ● Low Profile <1.1mm ● Available in Tape & Reel ● S1 G1 S2 G2 1 8 D1 2 7 D1 3 6 4 5 VDSS = -20V D2 D2 RDS(on) = 0.055W
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-91865A
IRF7555
p-channel 250V 30A power mosfet
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Untitled
Abstract: No abstract text available
Text: PD - 93848 IRF7750 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile < 1.1mm Available in Tape & Reel VDSS = -20V RDS(on) = 0.030Ω TSSOP-8 Description HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely
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IRF7750
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IRF7341
Abstract: IRF7341 application note
Text: PD -91703 IRF7341 HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance l Dual N-Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description l l S1 G1 S2 G2 1 8 D1 2 7 D1 3 6 4 5 VDSS = 55V
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IRF7341
IRF7341
IRF7341 application note
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IRF7509
Abstract: IRF7509P 91270j IRF7509N
Text: PD - 91270J IRF7509 HEXFET Power MOSFET ● ● ● ● ● ● ● Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Very Small SOIC Package Low Profile <1.1mm Available in Tape & Reel Fast Switching S1 G1 S2 G2 N-C HANNE L M O S F E T
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91270J
IRF7509
IRF7509
IRF7509P
91270j
IRF7509N
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IRF7750
Abstract: No abstract text available
Text: PD - 93848A IRF7750 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile < 1.1mm Available in Tape & Reel VDSS = -20V RDS(on) = 0.030Ω TSSOP-8 Description HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely
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3848A
IRF7750
IRF7750
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IRF7324
Abstract: No abstract text available
Text: PD -93799A IRF7324 HEXFET Power MOSFET ● ● ● ● ● ● Trench Technology Ultra Low On-Resistance Dual P-Channel MOSFET Low Profile <1.1mm Available in Tape & Reel 2.5V Rated S1 G1 S2 G2 1 8 D1 2 7 D1 3 6 4 5 VDSS = -20V D2 D2 RDS(on) = 0.018Ω
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-93799A
IRF7324
IRF7324
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Untitled
Abstract: No abstract text available
Text: PD -91865A IRF7555 HEXFET Power MOSFET Trench Technology ● Ultra Low On-Resistance ● Dual P-Channel MOSFET ● Very Small SOIC Package ● Low Profile <1.1mm ● Available in Tape & Reel ● 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 S1 VDSS = -20V RDS(on) = 0.055Ω
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-91865A
IRF7555
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IRF7507
Abstract: f7501
Text: PD - 91269I IRF7507 HEXFET Power MOSFET l l l l l l l Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Very Small SOIC Package Low Profile <1.1mm Available in Tape & Reel Fast Switching S1 G1 S2 G2 N-C HANNE L M O S F E T 1 8
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91269I
IRF7507
IRF7507
f7501
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IRF7507
Abstract: No abstract text available
Text: PD - 91269I IRF7507 HEXFET Power MOSFET l l l l l l l Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Very Small SOIC Package Low Profile <1.1mm Available in Tape & Reel Fast Switching S1 G1 S2 G2 N-C HANNE L M O S F E T 1 8
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91269I
IRF7507
IRF7507
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IRF7507
Abstract: No abstract text available
Text: PD - 91269I IRF7507 HEXFET Power MOSFET l l l l l l l Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Very Small SOIC Package Low Profile <1.1mm Available in Tape & Reel Fast Switching S1 G1 S2 G2 N-C HANNE L M O S F E T 1 8
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91269I
IRF7507
IRF7507
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13A40
Abstract: No abstract text available
Text: PD-93760 IRF7530 HEXFET Power MOSFET ● ● ● ● ● ● Trench Technology Ultra Low On-Resistance Dual N-Channel MOSFET Very Small SOIC Package Low Profile <1.1mm Available in Tape & Reel S1 G1 S2 G2 1 8 D1 2 7 D1 3 6 D2 4 5 D2 VDSS = 20V RDS(on) = 0.030Ω
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PD-93760
IRF7530
13A40
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Untitled
Abstract: No abstract text available
Text: International IQR Rectifier preliminary_IR F 7 3 4 3 HEXFET Power MOSFET • Generation V Technology • Ultra Low On-Resistance • Dual N and P Channel MOSFET • Surface Mount • Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier
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Untitled
Abstract: No abstract text available
Text: PD -91865A International i R Rectifier IRF7555 HEXFET Power MOSFET • • • • • • Trench Technology Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile <1.1 mm Available in Tape & Reel Voss = -20V Ftas(on) = 0.055D
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OCR Scan
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-91865A
IRF7555
DD33334
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