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    DUAL N & P-CHANNEL POWERTRENCH Search Results

    DUAL N & P-CHANNEL POWERTRENCH Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TLP294-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), AC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TLP295-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), DC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    DUAL N & P-CHANNEL POWERTRENCH Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    RTJC

    Abstract: No abstract text available
    Text: FDD8424H Dual N & P-Channel PowerTrench MOSFET N-Channel: 40V, 20A, 24m: P-Channel: -40V, -20A, 54m: Features General Description Q1: N-Channel These dual N and P-Channel enhancement „ Max rDS on = 24m: at VGS = 10V, ID = 9.0A MOSFETs are produced using Fairchild Semiconductor’s


    Original     		PDF FDD8424H FDD8424H RTJC

    FDMJ1032C

    Abstract: marking 032 SC-75 Dual N & P-Channel
    Text: FDMJ1032C tm Dual N & P-Channel PowerTrench MOSFET N-Channel: 20V, 3.2A, 90mΩ P-Channel: -20V, -2.5A, 160mΩ Features General Description Q1: N-Channel This dual N and P-Channel „ Max rDS on = 90mΩ at VGS = 4.5V, ID = 3.2A MOSFET is produced enhancement


    Original     		PDF FDMJ1032C FDMJ1032C marking 032 SC-75 Dual N & P-Channel

    Untitled

    Abstract: No abstract text available
    Text: FDD8424H Dual N & P-Channel PowerTrench MOSFET N-Channel: 40V, 20A, 24mΩ P-Channel: -40V, -20A, 54mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement „ Max rDS on = 24mΩ at VGS = 10V, ID = 9.0A MOSFETs are produced using Fairchild Semiconductor’s


    Original     		PDF FDD8424H

    Untitled

    Abstract: No abstract text available
    Text: FDS8958B Dual N & P-Channel PowerTrench MOSFET Q1-N-Channel: 30 V, 6.4 A, 26 mΩ Q2-P-Channel: -30 V, -4.5 A, 51 mΩ Features General Description Q1: N-Channel These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor's


    Original     		PDF FDS8958B com/dwg/M0/M08A

    FDS8958B

    Abstract: CQ238
    Text: FDS8958B Dual N & P-Channel PowerTrench MOSFET Q1-N-Channel: 30 V, 6.4 A, 26 mΩ Q2-P-Channel: -30 V, -4.5 A, 51 mΩ Features General Description Q1: N-Channel These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor's


    Original     		PDF FDS8958B FDS8958B CQ238

    N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 35V

    Abstract: No abstract text available
    Text: FDS8858CZ Dual N & P-Channel PowerTrench MOSFET N-Channel: 30V, 8.6A, 17.0mΩ P-Channel: -30V, -7.3A, 20.5mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement „ Max rDS on = 17mΩ at VGS = 10V, ID = 8.6A MOSFETs are produced using Fairchild Semiconductor’s


    Original     		PDF FDS8858CZ FDS8858CZ N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 35V

    FDD3510H

    Abstract: No abstract text available
    Text: FDD3510H Dual N & P-Channel PowerTrench MOSFET N-Channel: 80V, 13.9A, 80mΩ P-Channel: -80V, -9.4A, 190mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement „ Max rDS on = 80mΩ at VGS = 10V, ID = 4.3A MOSFETs are produced using Fairchild Semiconductor’s


    Original     		PDF FDD3510H FDD3510H

    FDS8858CZ

    Abstract: fds8858
    Text: FDS8858CZ Dual N & P-Channel PowerTrench MOSFET N-Channel: 30V, 8.6A, 17.0mΩ P-Channel: -30V, -7.3A, 20.5mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement „ Max rDS on = 17mΩ at VGS = 10V, ID = 8.6A MOSFETs are produced using Fairchild Semiconductor’s


    Original     		PDF FDS8858CZ FDS8858CZ fds8858

    FDS8858CZ

    Abstract: fds8858 DUAL N-CHANNEL POWERTRENCH MOSFET q2180
    Text: FDS8858CZ Dual N & P-Channel PowerTrench MOSFET N-Channel: 30V, 8.6A, 17.0mΩ P-Channel: -30V, -7.3A, 20.5mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement „ Max rDS on = 17mΩ at VGS = 10V, ID = 8.6A MOSFETs are produced using Fairchild Semiconductor’s


    Original     		PDF FDS8858CZ FDS8858CZ fds8858 DUAL N-CHANNEL POWERTRENCH MOSFET q2180

    Untitled

    Abstract: No abstract text available
    Text: FDD3510H Dual N & P-Channel PowerTrench MOSFET N-Channel: 80V, 13.9A, 80mΩ P-Channel: -80V, -9.4A, 190mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement ̈ Max rDS on = 80mΩ at VGS = 10V, ID = 4.3A MOSFETs are produced using Fairchild Semiconductor’s


    Original     		PDF FDD3510H FDD3510H

    Untitled

    Abstract: No abstract text available
    Text: FDS8958B Dual N & P-Channel PowerTrench MOSFET Q1-N-Channel: 30 V, 6.4 A, 26 mΩ Q2-P-Channel: -30 V, -4.5 A, 51 mΩ Features General Description Q1: N-Channel These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor's


    Original     		PDF FDS8958B FDS8958B

    FDS8858

    Abstract: No abstract text available
    Text: FDS8858CZ Dual N & P-Channel PowerTrench MOSFET N-Channel: 30V, 8.6A, 17.0mΩ P-Channel: -30V, -7.3A, 20.5mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement ̈ Max rDS on = 17mΩ at VGS = 10V, ID = 8.6A MOSFETs are produced using Fairchild Semiconductor’s


    Original     		PDF FDS8858CZ FDS8858

    Untitled

    Abstract: No abstract text available
    Text: FDD8424H Dual N & P-Channel PowerTrench MOSFET tm N-Channel: 40V, 20A, 24mΩ P-Channel: -40V, -20A, 54mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement ̈ Max rDS on = 24mΩ at VGS = 10V, ID = 9.0A MOSFETs are produced using Fairchild Semiconductor’s


    Original     		PDF FDD8424H FDD8424H

    Untitled

    Abstract: No abstract text available
    Text: FDD8424H_F085A Dual N & P-Channel PowerTrench MOSFET tm N-Channel: 40V, 20A, 24mΩ P-Channel: -40V, -20A, 54mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement „ Max rDS on = 24mΩ at VGS = 10V, ID = 9.0A MOSFETs are produced using Fairchild Semiconductor’s


    Original     		PDF FDD8424H F085A F085A

    Untitled

    Abstract: No abstract text available
    Text: FDD8424H_F085A Dual N & P-Channel PowerTrench MOSFET tm N-Channel: 40V, 20A, 24mΩ P-Channel: -40V, -20A, 54mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement ̈ Max rDS on = 24mΩ at VGS = 10V, ID = 9.0A MOSFETs are produced using Fairchild Semiconductor’s


    Original     		PDF FDD8424H F085A

    FDD8424

    Abstract: No abstract text available
    Text: FDD8424H_F085 Dual N & P-Channel PowerTrench MOSFET tm N-Channel: 40V, 20A, 24mΩ P-Channel: -40V, -20A, 54mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement ̈ Max rDS on = 24mΩ at VGS = 10V, ID = 9.0A MOSFETs are produced using Fairchild Semiconductor’s


    Original     		PDF FDD8424H FDD8424

    FDD8424h

    Abstract: fdd8424 TO-252-4L P-CHANNEL 90A POWER MOSFET Dual N & P-Channel PowerTrench
    Text: FDD8424H tm Dual N & P-Channel PowerTrench MOSFET N-Channel: 40V, 20A, 24mΩ P-Channel: -40V, -20A, 54mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement „ Max rDS on = 24mΩ at VGS = 10V, ID = 9.0A MOSFETs are produced using Fairchild Semiconductor’s


    Original     		PDF FDD8424H FDD8424H fdd8424 TO-252-4L P-CHANNEL 90A POWER MOSFET Dual N & P-Channel PowerTrench

    fdd8424H

    Abstract: fdd8424
    Text: FDD8424H_F085 Dual N & P-Channel PowerTrench MOSFET tm N-Channel: 40V, 20A, 24mΩ P-Channel: -40V, -20A, 54mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement „ Max rDS on = 24mΩ at VGS = 10V, ID = 9.0A MOSFETs are produced using Fairchild Semiconductor’s


    Original     		PDF FDD8424H fdd8424

    Mosfet 2011

    Abstract: FDD8424H_F085A Dual N & P-Channel
    Text: FDD8424H_F085A Dual N & P-Channel PowerTrench MOSFET tm N-Channel: 40V, 20A, 24mΩ P-Channel: -40V, -20A, 54mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement „ Max rDS on = 24mΩ at VGS = 10V, ID = 9.0A MOSFETs are produced using Fairchild Semiconductor’s


    Original     		PDF FDD8424H F085A F085A Mosfet 2011 FDD8424H_F085A Dual N & P-Channel

    Untitled

    Abstract: No abstract text available
    Text: FDD8426H Dual N & P-Channel PowerTrench MOSFET N-Channel: 40 V, 12 A, 12 mΩ P-Channel: -40 V, -10 A, 17 mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement mode Power ̈ Max rDS on = 12 mΩ at VGS = 10 V, ID = 12 A


    Original     		PDF FDD8426H

    cq213

    Abstract: FDD8426H
    Text: FDD8426H Dual N & P-Channel PowerTrench MOSFET N-Channel: 40 V, 12 A, 12 mΩ P-Channel: -40 V, -10 A, 17 mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement mode Power „ Max rDS on = 12 mΩ at VGS = 10 V, ID = 12 A


    Original     		PDF FDD8426H cq213 FDD8426H

    FDS4897AC

    Abstract: No abstract text available
    Text: FDS4897AC Dual N & P-Channel PowerTrench MOSFET N-Channel: 40 V, 6.1 A, 26 mΩ P-Channel: -40 V, -5.2 A, 39 mΩ Features General Description Q1: N-Channel These dual N- and P-Channel MOSFETs are produced using „ Max rDS on = 26 mΩ at VGS = 10 V, ID = 6.1 A


    Original     		PDF FDS4897AC FDS4897AC

    Untitled

    Abstract: No abstract text available
    Text: FDS4897AC Dual N & P-Channel PowerTrench MOSFET N-Channel: 40 V, 6.1 A, 26 mΩ P-Channel: -40 V, -5.2 A, 39 mΩ Features General Description Q1: N-Channel These dual N- and P-Channel MOSFETs are produced using ̈ Max rDS on = 26 mΩ at VGS = 10 V, ID = 6.1 A


    Original     		PDF FDS4897AC FDS4897AC

    Untitled

    Abstract: No abstract text available
    Text: FDMQ8203 GreenBridgeTM Series of High-Efficiency Bridge Rectifiers Dual N-Channel and Dual P-Channel PowerTrench MOSFET N-Channel: 100 V, 6 A, 110 mΩ P-Channel: -80 V, -6 A, 190 mΩ Features General Description Q1/Q4: N-Channel This quad mosfet solution provides ten-fold improvement in


    Original     		PDF FDMQ8203