Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A Search Results

    DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    PQU650-12P Murata Manufacturing Co Ltd AC/DC 650W, 6”X4” U-CHANNEL, 12V O/P Visit Murata Manufacturing Co Ltd
    MGN1S1208MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-8V GAN Visit Murata Manufacturing Co Ltd
    MGN1D120603MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-6/-3V GAN Visit Murata Manufacturing Co Ltd
    MGN1S1212MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-12V GAN Visit Murata Manufacturing Co Ltd
    MGN1S0508MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 5-8V GAN Visit Murata Manufacturing Co Ltd

    DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A 4

    Abstract: N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A 60V spn4946
    Text: SPN4946 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN4946 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to


    Original     		SPN4946 SPN4946 0V/12A Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A 4 N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A 60V PDF

    SPN4972B

    Abstract: Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A 4 SPN4972BS8RGB
    Text: SPN4972B N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN4972B is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to


    Original     		SPN4972B SPN4972B Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A 4 SPN4972BS8RGB PDF

    Untitled

    Abstract: No abstract text available
    Text: STN4826 Dual N Channel Enhancement Mode MOSFET 8.0A DESCRIPTION The STN4826 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These


    Original     		STN4826 STN4826 PDF

    spn4910

    Abstract: Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A 4 Vgs 40V mosfet N-Channel Enhancement Mode MOSFET N-Channel vgs 40V MOSFET
    Text: SPN4910 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN4910 is the Dual N-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state


    Original     		SPN4910 SPN4910 Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A 4 Vgs 40V mosfet N-Channel Enhancement Mode MOSFET N-Channel vgs 40V MOSFET PDF

    Untitled

    Abstract: No abstract text available
    Text: ACE4884 N-Channel Enhancement Mode MOSFET Description The ACE4884 is the Dual N-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly


    Original     		ACE4884 ACE4884 0V/10A PDF

    4920n

    Abstract: Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A 4 AF4920N AA MARKING CODE SO8
    Text: AF4920N N-Channel Enhancement Mode Power MOSFET „ Features „ General Description - Low On-resistance - Simple Drive Requirement - Dual N MOSFET Package The advanced power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and


    Original     		AF4920N 4920N 4920N Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A 4 AF4920N AA MARKING CODE SO8 PDF

    Untitled

    Abstract: No abstract text available
    Text: AP4226AGM-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-Resistance BVDSS 30V ▼ Simple Drive Requirement RDS ON 18mΩ ▼ Dual N MOSFET Package ID 8.7A ▼ Halogen Free & RoHS Compliant Product


    Original     		AP4226AGM-HF 100us 100ms PDF

    Untitled

    Abstract: No abstract text available
    Text: DMG9N65CT N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Description • • • • • • This new generation complementary dual MOSFET features low onresistance and fast switching, making it ideal for high efficiency power management applications.


    Original     		DMG9N65CT O-220AB AEC-Q101 DS35619 PDF

    Untitled

    Abstract: No abstract text available
    Text: DMG9N65CTI N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Description • • • • • • This new generation complementary dual MOSFET features low onresistance and fast switching, making it ideal for high efficiency power management applications.


    Original     		DMG9N65CTI ITO-220AB AEC-Q101 DS36027 PDF

    9N65

    Abstract: DMG9N DMG9N65CT 9N65CT
    Text: DMG9N65CT N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Description • • • • • • This new generation complementary dual MOSFET features low onresistance and fast switching, making it ideal for high efficiency power management applications.


    Original     		DMG9N65CT O-220AB AEC-Q101 O-220AB, DS35619 9N65 DMG9N DMG9N65CT 9N65CT PDF

    650VVGS

    Abstract: No abstract text available
    Text: DMG9N65CTI N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Description • • • • • • This new generation complementary dual MOSFET features low onresistance and fast switching, making it ideal for high efficiency power management applications.


    Original     		DMG9N65CTI ITO-220AB AEC-Q101 DS36027 650VVGS PDF

    Untitled

    Abstract: No abstract text available
    Text: DMG9N65CTI N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Description • • • • • • This new generation complementary dual MOSFET features low onresistance and fast switching, making it ideal for high efficiency power management applications.


    Original     		DMG9N65CTI ITO-220AB AEC-Q101 DS36027 PDF

    CHM4269JGP

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT Dual Enhancement Mode Field Effect Transistor N-channel: VOLTAGE 40 Volts P-channel: VOLTAGE 40 Volts CHM4269JGP CURRENT 6.1 Ampere CURRENT 5.2 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers.


    Original     		CHM4269JGP 250uA CHM4269JGP PDF

    Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT Dual Enhancement Mode Field Effect Transistor N-channel: VOLTAGE 40 Volts P-channel: VOLTAGE 40 Volts CHM4269JPT CURRENT 6.1 Ampere CURRENT 5.2 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers.


    Original     		CHM4269JPT 250uA Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A PDF

    AP4226GM

    Abstract: No abstract text available
    Text: AP4226GM Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-Resistance ▼ Simple Drive Requirement D2 D2 D1 D1 ▼ Dual N MOSFET Package S1 30V RDS ON 18mΩ ID G2 S2 SO-8 BVDSS 8.2A G1 Description


    Original     		AP4226GM 100us 100ms 135/W AP4226GM PDF

    Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A 4

    Abstract: Dual N-Channel MOSFET SOP8 60V dual N-Channel trench mosfet LT4948C lt494 N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A 60V LT4948C-G
    Text: LT4948C -G Dual N-Channel 60-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The LT4948C is the Dual N-Channel logic enhancement mode power ● RDS(ON)≦53 mΩ@VGS=10V field effect transistors, using high cell density, DMOS trench ● RDS(ON)≦78 mΩ@VGS=4.5V


    Original     		LT4948C Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A 4 Dual N-Channel MOSFET SOP8 60V dual N-Channel trench mosfet lt494 N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A 60V LT4948C-G PDF

    AP4226AGM

    Abstract: No abstract text available
    Text: AP4226AGM Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-Resistance D2 ▼ Simple Drive Requirement D2 D1 D1 ▼ Dual N MOSFET Package BVDSS 30V RDS ON 18mΩ ID 8.7A G2 S2 ▼ RoHS Compliant SO-8


    Original     		AP4226AGM 100ms 135/W AP4226AGM PDF

    DMG9N65CT

    Abstract: No abstract text available
    Text: DMG9N65CT Green N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Description •      This new generation complementary dual MOSFET features low onresistance and fast switching, making it ideal for high efficiency power management applications.


    Original     		DMG9N65CT O-220AB AEC-Q101 DS35619 DMG9N65CT PDF

    Untitled

    Abstract: No abstract text available
    Text: AP6902GH-HF Preliminary Advanced Power Electronics Corp. DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement BVDSS Fast Switching Performance RDS ON Two Independent Device ID 30V 10m 42A Halogen Free & RoHS Compliant Product Description


    Original     		AP6902GH-HF 100ms 100us PDF

    Untitled

    Abstract: No abstract text available
    Text: AP4226GM-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-Resistance ▼ Simple Drive Requirement D2 D2 D1 D1 ▼ Dual N MOSFET Package ▼ RoHS Compliant SO-8 G1 S1 BVDSS 30V RDS ON 18mΩ ID G2 S2


    Original     		AP4226GM-HF 100ms PDF

    Untitled

    Abstract: No abstract text available
    Text: AP4226AGM RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Low On-Resistance BVDSS D2 Simple Drive Requirement D1 D2 RDS ON D1 Dual N MOSFET Package S1 G1 18m ID G2 SO-8 30V 8.7A S2 Description D2 D1 Advanced Power MOSFETs from APEC provide the


    Original     		AP4226AGM 4226AGM PDF

    lt494

    Abstract: Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A 4
    Text: LT4948C -G Dual N-Channel 60-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The LT4948C is the Dual N-Channel logic enhancement mode power ● RDS(ON)≦53 mΩ@VGS=10V field effect transistors, using high cell density, DMOS trench technology. This high density process is especially tailored to


    Original     		LT4948C 300us, lt494 Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A 4 PDF

    Untitled

    Abstract: No abstract text available
    Text: AP9960AGM-HF Halogen-Free Product Advanced Power Electronics Corp. DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET Lower Gate Charge BVDSS Simple Drive Requirement RDS ON Fast Switching Characteristic ID 40V 16m 8.7A Halogen Free & RoHS Compliant Product D2


    Original     		AP9960AGM-HF 100us 100ms PDF

    AP4226M

    Abstract: No abstract text available
    Text: AP4226M Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-Resistance ▼ Simple Drive Requirement D2 D2 D1 D1 ▼ Dual N MOSFET Package S1 30V RDS ON 18mΩ ID G2 S2 SO-8 BVDSS 8.2A G1 Description D2 D1 The Advanced Power MOSFETs from APEC provide the


    Original     		AP4226M 100us 100ms 135/W AP4226M PDF