SOC3810HRB
Abstract: No abstract text available
Text: 2N3810HR Hi-Rel PNP dual matched bipolar transistor 60 V - 0.05 A Features BVCEO 60 V IC max 0.05 A HFE at 10 V - 150 mA > 150 Operating temperature range -65°C to +200°C • Hi-Rel PNP dual matched bipolar transistor ■ Linear gain characteristics ■
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2N3810HR
2N3810HR
SOC3810HRB
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ESCC 5207-005
Abstract: SOC3810 MARKING SMD PNP TRANSISTOR R SOC3810HRB 2N3810 2N3810HR LCC6 bipolar junction transistor LCC-6 marking code SMD ic
Text: 2N3810HR Hi-Rel PNP dual matched bipolar transistor 60 V - 0.05 A Features BVCEO 60 V IC max 0.05 A HFE at 10 V - 150 mA > 150 Operating temperature range -65°C to +200°C • Hi-Rel PNP dual matched bipolar transistor ■ Linear gain characteristics ■
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2N3810HR
2N3810HR
ESCC 5207-005
SOC3810
MARKING SMD PNP TRANSISTOR R
SOC3810HRB
2N3810
LCC6
bipolar junction transistor
LCC-6
marking code SMD ic
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SOC3810HRB
Abstract: transistor st 431 SOC38 ESCC SOC3810 2N3810
Text: 2N3810HR Hi-Rel PNP dual matched bipolar transistor 60 V, 0.05 A Datasheet — production data Features BVCEO 60 V IC max 0.05 A HFE at 10 V - 150 mA > 150 Operating temperature range -65°C to +200°C • Hi-Rel PNP dual matched bipolar transistor ■ Linear gain characteristics
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2N3810HR
2N3810HR
SOC3810HRB
transistor st 431
SOC38
ESCC
SOC3810
2N3810
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ESCC 5207 005
Abstract: 2N3810HR 2N3810HRG
Text: 2N3810HR Hi-Rel PNP dual matched bipolar transistor 60 V, 0.05 A Datasheet - production data Features 21 3 4 56 BVCEO 60 V IC max 0.05 A HFE at 10 V - 150 mA > 150 Operating temperature range -65°C to +200°C • Hi-Rel PNP dual matched bipolar transistor
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2N3810HR
2N3810HR
DocID15385
ESCC 5207 005
2N3810HRG
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Untitled
Abstract: No abstract text available
Text: LP2967 Dual Micropower 150 mA Low-Dropout Regulator in micro SMD Package General Description Features The LP2967 is a 150 mA, dual fixed-output voltage regulator designed to provide ultra low-dropout and low noise in battery powered applications. Using an optimized VIP Vertically Integrated PNP process,
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LP2967
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ELECTROLYTIC capacitor, .3000 uF 5V
Abstract: 5v input 5v output regulator smd
Text: LP2967 Dual Micropower 150 mA Low-Dropout Regulator in micro SMD Package General Description Features The LP2967 is a 150 mA, dual fixed-output voltage regulator designed to provide ultra low-dropout and low noise in battery powered applications. Using an optimized VIP Vertically Integrated PNP process,
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LP2967
ELECTROLYTIC capacitor, .3000 uF 5V
5v input 5v output regulator smd
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LP2967IMM-2528
Abstract: LP2967 LP2967IMM-2533 LP2967IMM-2626 LP2967IMM-2828 LP2967IMMX-2528 LP2967IMMX-2533 LP2967IMMX-2626 LP2967IMMX-2828
Text: LP2967 Dual Micropower 150 mA Low-Dropout Regulator in micro SMD Package General Description Features The LP2967 is a 150 mA, dual fixed-output voltage regulator designed to provide ultra low-dropout and low noise in battery powered applications. Using an optimized VIP Vertically Integrated PNP process,
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LP2967
LP2967
LP2967IMM-2528
LP2967IMM-2533
LP2967IMM-2626
LP2967IMM-2828
LP2967IMMX-2528
LP2967IMMX-2533
LP2967IMMX-2626
LP2967IMMX-2828
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E20A
Abstract: LM6118 LM6118N LM6218AN LM6218N
Text: LM6118/LM6218 Fast Settling Dual Operational Amplifiers General Description Features The LM6118 series are monolithic fast-settling unity-gain-compensated dual operational amplifiers with ± 20 mA output drive capability. The PNP input stage has a typical
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LM6118/LM6218
LM6118
E20A
LM6118
LM6118N
LM6218AN
LM6218N
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g10 smd transistor
Abstract: LM6218 schematic diagram ac inverter LM6218AN LM6218N E20A J08A LM6118 LM6118J LM6118N
Text: LM6118 LM6218 Fast Settling Dual Operational Amplifiers General Description Features The LM6118 series are monolithic fast-settling unity-gaincompensated dual operational amplifiers with g 20 mA output drive capability The PNP input stage has a typical bias
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LM6118
LM6218
20-3A
g10 smd transistor
LM6218
schematic diagram ac inverter
LM6218AN
LM6218N
E20A
J08A
LM6118J
LM6118N
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Untitled
Abstract: No abstract text available
Text: Transistors IC SMD Type General purpose Dual PNP Transistors FMS4 • Features Unit: mm ● High breakdown voltage ● Power dissipation: PC=300mW 4 5 ● Collector Curren: IC=-50mA 1 2 3 FMS4 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating
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300mW
-50mA
100MHz
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Untitled
Abstract: No abstract text available
Text: Transistors IC SMD Type General purpose Dual PNP Transistors FMS3 • Features Unit: mm ● High breakdown voltage ● Power dissipation: PC=300mW 4 5 ● Collector Curren: IC=-50mA 1 2 3 FMS3 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating
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300mW
-50mA
100MHz
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BC237
Abstract: equivalent to BC177 2n6431
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MUN5111DW1T1 SERIES Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network Motorola Preferred Devices The BRT Bias Resistor Transistor contains a single transistor with a monolithic
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MUN5111DW1T1
Reduc218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
BC237
equivalent to BC177
2n6431
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Transistor 2N2905A
Abstract: BC237 applications of Transistor BC108 transistor c-1000 transistor equivalent 2n5551 2N2904 transistor TO92
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network MUN5311DW1T1 SERIES Motorola Preferred Devices The BRT Bias Resistor Transistor contains a single transistor with a
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MUN5311DW1T1
Red218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
Transistor 2N2905A
BC237
applications of Transistor BC108
transistor c-1000
transistor equivalent 2n5551
2N2904 transistor TO92
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Untitled
Abstract: No abstract text available
Text: Transistors IC SMD Type General purpose Dual PNP Transistors KTA501U SOT-353 Unit: mm +0.1 -0.1 1.3 • Features 0.525 0.65 0.36 +0.15 2.3-0.15 ● Collector Curren: IC=-150mA +0.1 1.25-0.1 ● Power dissipation: PC=200mW +0.05 0.1-0.02 Q1 0.1max +0.1 0.3-0.1
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KTA501U
OT-353
-150mA
200mW
-100mA,
-10mA
100MHz
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MUN5111DW1T1
Abstract: MUN5112DW1T1 MUN5113DW1T1 MUN5114DW1T1 MUN5115DW1T1 MUN5116DW1T1 MUN5130DW1T1 MUN5131DW1T1 MUN5136DW1T1
Text: MUN5111DW1T1 Series Preferred Devices Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base
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MUN5111DW1T1
r14525
MUN5111DW1T1/D
MUN5112DW1T1
MUN5113DW1T1
MUN5114DW1T1
MUN5115DW1T1
MUN5116DW1T1
MUN5130DW1T1
MUN5131DW1T1
MUN5136DW1T1
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UMC3NT1
Abstract: SMD310
Text: UMC2NT1, UMC3NT1, UMC5NT1 Preferred Devices Dual Common Base-Collector Bias Resistor Transistors http://onsemi.com NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network 3 1 R1 The BRT Bias Resistor Transistor contains a single transistor with
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r14525
UMC3NT1
SMD310
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Untitled
Abstract: No abstract text available
Text: UMC2NT1, UMC3NT1, UMC5NT1 Preferred Devices Dual Common Base−Collector Bias Resistor Transistors http://onsemi.com NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network 3 1 R1 The BRT Bias Resistor Transistor contains a single transistor with
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OT-353
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6 pin TRANSISTOR SMD CODE PA
Abstract: 2N3904 TRANSISTOR SMD 2N2222A SMD 2N3906 SMD smd transistor 26 smd TRANSISTOR NY transistor SMD 2n3904 ny smd transistor dual 2N3904 NPN Transistor smd 2n2907a
Text: New Product Announcement Dual Transistors Sample Devices SUPER TM available mini upon request. SOT-26 Actual Size Available devices include: PNP and NPN Small Signal Transistors Features • Galvanically Isolated • Requires less board space than 2 individual devices.
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OT-26
OT-26
CMXT2222A
CMXT2907A
CMXT3904
-SOT-26
6 pin TRANSISTOR SMD CODE PA
2N3904 TRANSISTOR SMD
2N2222A SMD
2N3906 SMD
smd transistor 26
smd TRANSISTOR NY
transistor SMD 2n3904
ny smd transistor
dual 2N3904 NPN Transistor
smd 2n2907a
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Untitled
Abstract: No abstract text available
Text: UMC2NT1, UMC3NT1, UMC5NT1 Preferred Devices Dual Common Base-Collector Bias Resistor Transistors http://onsemi.com NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network 3 1 R1 The BRT Bias Resistor Transistor contains a single transistor with
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r14525
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34 sot-363
Abstract: MUN5136DW1T1
Text: MUN5111DW1T1 Series Preferred Devices Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base
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MUN5111DW1T1
r14525
MUN5111DW1T1/D
34 sot-363
MUN5136DW1T1
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E20A
Abstract: LM6118 LM6118N LM6218AN LM6218N
Text: General Description Features The LM6118 series are monolithic fast-settling unity-gain-compensated dual operational amplifiers with ± 20 mA output drive capability. The PNP input stage has a typical bias current of 200 nA, and the operating supply voltage is
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LM6118
ds010254
E20A
LM6118
LM6118N
LM6218AN
LM6218N
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MUN5111DW1T1
Abstract: MUN5112DW1T1 MUN5113DW1T1 MUN5114DW1T1 MUN5115DW1T1 MUN5116DW1T1 MUN5130DW1T1 MUN5131DW1T1 MUN5132DW1T1
Text: MOTOROLA Order this document by MUN5111DW1T1/D SEMICONDUCTOR TECHNICAL DATA MUN5111DW1T1 SERIES Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network Motorola Preferred Devices The BRT Bias Resistor Transistor contains a single transistor with a monolithic
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MUN5111DW1T1/D
MUN5111DW1T1
MUN5111DW1T1
MUN5112DW1T1
MUN5113DW1T1
MUN5114DW1T1
MUN5115DW1T1
MUN5116DW1T1
MUN5130DW1T1
MUN5131DW1T1
MUN5132DW1T1
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lm6116
Abstract: No abstract text available
Text: LM6118/LM6218 & Nation a I Semiconductor LM6118/LM6218 Fast Settling Dual Operational Amplifiers General Description Features The LM6118 series are monolithic fast-settling unity-gaincompensated dual operational amplifiers with ± 20 mA out put drive capability. The PNP input stage has a typical bias
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OCR Scan
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LM6118/LM6218
LM6118/LM6218
LM6118
TL/H/10254-19
LM6118
lm6116
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6118E
Abstract: No abstract text available
Text: LM6118/LM6218 £3 National ÆM Semiconductor LM6118/LM6218 Fast Settling Dual Operation Amplifiers General Description Features The LM6118 series are monolithic fast-settling unity-gaincompensated dual operational amplifiers with ± 2 0 mA out put drive capability. The PNP input stage has a typical bias
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OCR Scan
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LM6118/LM6218
LM6118/LM6218
LM6118
V2LM6118
6118E
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