DUROID 6006 Search Results
DUROID 6006 Result Highlights (5)
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Description |
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60066-5004LF |
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Metral®, Backplane connectors, 1000 Series Header, Vertical Signal, 5 Row, Press-Fit, 90 Position, Select Load, Standard |
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60066-5002LF |
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Metral® High Speed 1000 Series, Backplane Connectors, Header, Vertical Signal, 5 Row, Press-Fit, 90 Position, Select Load, Standard |
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60066-5003LF |
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Metral® High Speed 1000 Series, Backplane Connectors, Header, Vertical Signal, 5 Row, Press-Fit, 90 Position, Select Load, Standard |
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66506-006LF |
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Quickie® IDC Cable-to-Board Connector System, Shrouded Slim Line Header, Vertical, Through Hole, Double Row, 10 Positions, 2.54mm (0.100in) Pitch. |
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69916-006LF |
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BergStik® 2.54mm, Board to Board connector, Vertical 2 Row Board-to-Board Stacking Header 20 Positions, 2.54mm Pitch. 0.76um (30u\\.) GXT™ Mating plating. |
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DUROID 6006 Datasheets Context Search
Catalog Datasheet |
Type |
Document Tags |
PDF |
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RO4403
Abstract: Rogers RO4003 rt/duroid 5880 RO4450F rogers 5880 RO3006 RO4350B rogers laminate materials RO4450B RO3210
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6010LM, RO3003 RO3035 RO3203 RO3006 RO3206 RO3010 RO3210 RO4003C RO4350B RO4403 Rogers RO4003 rt/duroid 5880 RO4450F rogers 5880 RO3006 rogers laminate materials RO4450B RO3210 | |
smd-transistor DATA BOOK
Abstract: SMD Transistor rt/duroid 6006 TRANSISTOR SMD catalog transistor SMD DK Philips 2222-581 smd-transistor -1.am Duroid 6006 SMD Transistor 6f smd transistor l6
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BLV2042 AN98018 BLV2042. 199lding SCA57 smd-transistor DATA BOOK SMD Transistor rt/duroid 6006 TRANSISTOR SMD catalog transistor SMD DK Philips 2222-581 smd-transistor -1.am Duroid 6006 SMD Transistor 6f smd transistor l6 | |
smd transistor 6g
Abstract: 6G smd transistor s band POWER TRANSISTOR 2.7 3.1 3.5 GHZ nxp 544 200B BLS6G2731-6G TAJD106K035R transistor equivalent table sot975c radar circuit component
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BLS6G2731-6G BLS6G2731-6G smd transistor 6g 6G smd transistor s band POWER TRANSISTOR 2.7 3.1 3.5 GHZ nxp 544 200B TAJD106K035R transistor equivalent table sot975c radar circuit component | |
Contextual Info: 0912GN-300.Rev2 0912GN-300 300 Watts - 65 Volts, 128 s, 10% Broad Band Data Link 960 - 1215 MHz GENERAL DESCRIPTION CASE OUTLINE 55-KR Common Source The 0912GN-300 is an internally matched, COMMON SOURCE, class AB GaN on SiC HEMT transistor capable of providing over 18dB gain, |
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0912GN-300 0912GN-300 55-KR -128us Hz-1215MHz 55-KR | |
radar amplifier s-band
Abstract: radar amplifier s-band 2.7 2.9 GHZ ROGERS DUROID
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BLS6G2731S-130 radar amplifier s-band radar amplifier s-band 2.7 2.9 GHZ ROGERS DUROID | |
Contextual Info: BLS6G2731S-130 LDMOS S-band radar power transistor Rev. 2 — 18 November 2010 Product data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range. Table 1. Typical performance |
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BLS6G2731S-130 | |
BLL6H1214-500
Abstract: 800B
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BLL6H1214-500 BLL6H1214-500 800B | |
transistor d 1302
Abstract: smd transistor 927 smd transistor equivalent table Duroid 6006 sot922 radar circuit component
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BLS6G2933S-130 BLS6G2933S-130 transistor d 1302 smd transistor 927 smd transistor equivalent table Duroid 6006 sot922 radar circuit component | |
amplifier TRANSISTOR 12 GHZ
Abstract: smd transistor w J 3 58 smd transistor equivalent table smd transistor 927
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BLS6G2933S-130 BLS6G2933S-130 amplifier TRANSISTOR 12 GHZ smd transistor w J 3 58 smd transistor equivalent table smd transistor 927 | |
BLS6G2731-120Contextual Info: BLS6G2731-120; BLS6G2731S-120 LDMOS S-band radar power transistor Rev. 01 — 14 November 2008 Product data sheet 1. Product profile 1.1 General description 120 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range. Table 1. |
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BLS6G2731-120; BLS6G2731S-120 BLS6G2731-120 6G2731S-120 | |
800BContextual Info: BLL6H1214L-250; BLL6H1214LS-250 LDMOS L-band radar power transistor Rev. 01 — 11 December 2009 Objective data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range. |
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BLL6H1214L-250; BLL6H1214LS-250 BLL6H1214L-250 1214LS-250 800B | |
BLS2933-100
Abstract: T491D475K050AS Duroid 6006 NV SMD TRANSISTOR 13N-50-057 23N-50-057
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BLS2933-100 BLS2933-100 T491D475K050AS Duroid 6006 NV SMD TRANSISTOR 13N-50-057 23N-50-057 | |
SOT608BContextual Info: BLS6G3135-20; BLS6G3135S-20 LDMOS S-Band radar power transistor Rev. 02 — 17 December 2008 Product data sheet 1. Product profile 1.1 General description 20 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz range. Table 1. |
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BLS6G3135-20; BLS6G3135S-20 BLS6G3135-20 6G3135S-20 SOT608B | |
BLA1011-300Contextual Info: BLA1011-300 Avionics LDMOS transistors Rev. 02 — 5 February 2008 Product data sheet 1. Product profile 1.1 General description 300 W LDMOS pulsed power transistor for TCAS and IFF applications at frequencies from 1030 MHz to 1090 MHz. Table 1. Typical performance |
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BLA1011-300 BLA1011-300 | |
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Contextual Info: BLL6H0514-25 LDMOS driver transistor Rev. 03 — 23 February 2010 Product data sheet 1. Product profile 1.1 General description 25 W LDMOS transistor intended for pulsed applications in the 0.5 GHz to 1.4 GHz range. Table 1. Application information Typical RF performance at Tcase = 25 °C; IDq = 50 mA; in a class-AB application circuit. |
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BLL6H0514-25 BLL6H0514-25 | |
BLS6G3135S-120
Abstract: BLS6G3135-120
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BLS6G3135-120; BLS6G3135S-120 BLS6G3135-120 6G3135S-120 BLS6G3135S-120 | |
BLL6H0514-25Contextual Info: BLL6H0514-25 LDMOS driver transistor Rev. 04 — 30 March 2010 Product data sheet 1. Product profile 1.1 General description 25 W LDMOS transistor intended for pulsed applications in the 0.5 GHz to 1.4 GHz range. Table 1. Application information Typical RF performance at Tcase = 25 °C; IDq = 50 mA; in a class-AB application circuit. |
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BLL6H0514-25 BLL6H0514-25 | |
JESD625-AContextual Info: BLL6H0514L-130; BLL6H0514LS-130 LDMOS driver transistor Rev. 1 — 9 August 2010 Preliminary data sheet 1. Product profile 1.1 General description 130 W LDMOS transistor intended for pulsed applications in the 0.5 GHz to 1.4 GHz range. Table 1. Application information |
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BLL6H0514L-130; BLL6H0514LS-130 BLL6H0514L-130 0514LS-130 JESD625-A | |
BLS7G2933S-150
Abstract: radar amplifier s-band SOT922-1 JESD625-A
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BLS7G2933S-150 BLS7G2933S-150 radar amplifier s-band SOT922-1 JESD625-A | |
Contextual Info: BLA6H0912L-1000; BLA6H0912LS-1000 LDMOS avionics power transistor Rev. 1 — 4 November 2013 Objective data sheet 1. Product profile 1.1 General description 1000 W LDMOS pulsed power transistor intended for TCAS and IFF applications at 1030 MHz. Table 1. Test information |
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BLA6H0912L-1000; BLA6H0912LS-1000 BLA6H0912L-1000 0912LS-1000 | |
Contextual Info: BLS6G2933S-130 LDMOS S-band radar power transistor Rev. 03 — 3 March 2010 Product data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range. Table 1. Typical performance |
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BLS6G2933S-130 BLS6G2933S-130 | |
Contextual Info: BLS6G2933S-130 LDMOS S-band radar power transistor Rev. 03 — 3 March 2010 Product data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range. Table 1. Typical performance |
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BLS6G2933S-130 BLS6G2933S-130 | |
Contextual Info: BLL6H0514-25 LDMOS driver transistor Rev. 04 — 30 March 2010 Product data sheet 1. Product profile 1.1 General description 25 W LDMOS transistor intended for pulsed applications in the 0.5 GHz to 1.4 GHz range. Table 1. Application information Typical RF performance at Tcase = 25 °C; IDq = 50 mA; in a class-AB application circuit. |
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BLL6H0514-25 BLL6H0514-25 771-BLL6H0514-25112 | |
Contextual Info: BLS7G2933S-150 LDMOS S-band radar power transistor Rev. 2 — 23 February 2011 Product data sheet 1. Product profile 1.1 General description 150 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range. Table 1. Typical performance |
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BLS7G2933S-150 |