nc 555
Abstract: nc555 LCHG NC27 DK855
Text: LCQD NC :555:W :55:W TIRU LCQD NC :565W :565W DC COMPONENTS CO., LTD. R RFDTJGJFR SQFDJBMJSTS TFDIOJDBM SQFDJGJDBTJPOS PG SJOHMF2QIBSF SJMJDPO CRJEHF RFDTJGJFR VPMTBHF RBOHF 2 :5 lh 6555 Vhelk DURRFOT 2 :5 Bfi_j_k GFBTURFS / N_l[e ][k_ `hj N[pcfmf I_[l Eckkci[lchg
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lcgak2955
NJM2STE2757F1
nc 555
nc555
LCHG
NC27
DK855
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he 234
Abstract: 835B
Text: LCK9B DC COMPONENTS CO., LTD. R TIRU RFDTJGJFR SQFDJBMJSTS LCK9N TFDIOJDBM SQFDJGJDBTJPOS PG SJOHMF2QIBSF SJMJDPO CRJEHF RFDTJGJFR VPMTBHF RBOHF 2 :5 lh 6555 Vhelk DURRFOT 2 935 Bfi_j_k GFBTURFS / J^_[e `hj ijcgl_^ ]cj]mcl \h[j^ / Smja_ hn_jeh[^ j[lcga? 675 Bfi_j_k i_[d
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NJM2STE2757F1
855p855p63
he 234
835B
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65-TK
Abstract: No abstract text available
Text: LCL7:B DC COMPONENTS CO., LTD. R TIRU RFDTJGJFR SQFDJBMJSTS LCL7:N TFDIOJDBM SQFDJGJDBTJPOS PG SJOHMF2QIBSF SJMJDPO CRJEHF RFDTJGJFR VPMTBHF RBOHF 2 :5 lh 6555 Vhelk DURRFOT 2 7: Bfi_j_k GFBTURFS / Mho e_[d[a_ / Mho `hjo[j^ nhel[a_ / Smja_ hn_jeh[^ j[lcga? 855 Bfi_j_k i_[d
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NJM2STE2757F1
855p855p63
65-TK
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mz 73 g
Abstract: 836B mz 73 b dk qd
Text: 6O:=6< DC COMPONENTS CO., LTD. R TIRU RFDTJGJFR SQFDJBMJSTS 6O:=6> TFDIOJDBM SQFDJGJDBTJPOS PG SDIPTTLY CBRRJFR RFDTJGJFR VPMTBHF RBOHF 2 75 kg 95 Vgdkj DURRFOT 2 635 Beh^i^ GFBTURFS / / / / / / Mgn jnbk\abf` fgbj^ Mgn _ginZi] mgdkZ`^ ]igh Ib`a \lii^fk \ZhZ[bdbkp
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EP296
NJM2STE2757F1
mz 73 g
836B
mz 73 b
dk qd
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chn 745
Abstract: CHN 645 CHN 549
Text: LCQ RS 55: 756 TIRU LCQ RS 65 75< DC COMPONENTS CO., LTD. RFDTJGJFR SQFDJBMJSTS R TFDIOJDBM SQFDJGJDBTJPOS PG SJOHMF3QIBSF SJMJDPO CRJEHF RFDTJGJFR VPMTBHF RBOHF 3 :5 mi 6555 Vifml DURRFOT 3 745 Bgj_k_l GFBTURFS 0 J^_[f `ik jkchm_^ ]ck]ncm \i[k^ 0 Snka_ io_kfi[^ k[mcha? :5 Bgj_k_l j_[e
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NJM3STE3757F2
67q67gg/
LCQ55:
RS756
LCQ65
chn 745
CHN 645
CHN 549
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KSD1692
Abstract: No abstract text available
Text: KSD1692 KSD1692 Feature • • • • High Dc Durrent Gain Low Collector Saturation Voltage Built-in a Damper Diode at E-C High Power Dissipation : PC = 1.3W Ta=25°C TO-126 1 1. Emitter 2.Collector 3.Base NPN Silicon Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted
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KSD1692
O-126
KSD1692
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Untitled
Abstract: No abstract text available
Text: 6O:=75 TIRU RFDTJGJFR SQFDJBMJSTS 6O:=77 TFDIOJDBM SQFDJGJDBTJPOS PG SDIPTTLY CBRRJFR RFDTJGJFR VPMTBHF RBOHF 2 75 kg 95 Vgdkj DURRFOT 2 835 Beh^i^j GFBTURFS / / / / / / Mgn jnbk\abf` fgbj^ Mgn _ginZi] mgdkZ`^ ]igh Ib`a \lii^fk \ZhZ[bdbkp Ib`a jnbk\abf` \ZhZ[bkbkp
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NJM2STE2757F1
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836B
Abstract: NZM 6 mz 73 g
Text: 6O:=6< DC COMPONENTS CO., LTD. R TIRU RFDTJGJFR SQFDJBMJSTS 6O:=6> TFDIOJDBM SQFDJGJDBTJPOS PG SDIPTTLY CBRRJFR RFDTJGJFR VPMTBHF RBOHF 2 75 kg 95 Vgdkj DURRFOT 2 635 Beh^i^ GFBTURFS / / / / / / Mgn jnbk\abf` fgbj^ Mgn _ginZi] mgdkZ`^ ]igh Ib`a \lii^fk \ZhZ[bdbkp
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EP296
NJM2STE2757F1
836B
NZM 6
mz 73 g
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2SB1105
Abstract: 2SD1605
Text: JMnic Product Specification 2SB1105 Silicon PNP Power Transistors DESCRIPTION ・With TO-220C package ・DARLINGTON ・High DC durrent gain ・Complement to type 2SD1605 APPLICATIONS ・Designed for use in low frequency power amplifier applications PINNING
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2SB1105
O-220C
2SD1605
-30mA
-120V,
-100V,
2SB1105
2SD1605
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2SB1106
Abstract: 2SD1606 2SB110
Text: Inchange Semiconductor Product Specification 2SB1106 Silicon PNP Power Transistors DESCRIPTION ・With TO-220C package ・DARLINGTON ・High DC durrent gain ・Complement to type 2SD1606 APPLICATIONS ・Designed for use in low frequency power amplifier applications
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2SB1106
O-220C
2SD1606
-60mA
-120V,
-100V,
2SB1106
2SD1606
2SB110
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BFr pnp transistor
Abstract: No abstract text available
Text: BFR 92P NPN Silicon RF Transistor 3 For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector durrents from 0.5 mA to 20 mA Complementary type: BFT 92 PNP 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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VPS05161
OT-23
900MHz
Oct-13-1999
BFr pnp transistor
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EP27
Abstract: 835B
Text: 6O:=75 DC COMPONENTS CO., LTD. R TIRU RFDTJGJFR SQFDJBMJSTS 6O:=77 TFDIOJDBM SQFDJGJDBTJPOS PG SDIPTTLY CBRRJFR RFDTJGJFR VPMTBHF RBOHF 2 75 kg 95 Vgdkj DURRFOT 2 835 Beh^i^j GFBTURFS / / / / / / Mgn jnbk\abf` fgbj^ Mgn _ginZi] mgdkZ`^ ]igh Ib`a \lii^fk \ZhZ[bdbkp
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NJM2STE2757F1
EP27
835B
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transistor 123
Abstract: cj-ca
Text: LCK65B DC COMPONENTS CO., LTD. R TIRU RFDTJGJFR SQFDJBMJSTS LCK65N TFDIOJDBM SQFDJGJDBTJPOS PG SJOHMF2QIBSF SJMJDPO CRJEHF RFDTJGJFR VPMTBHF RBOHF 2 :5 lh 6555 Vhelk DURRFOT 2 65 Bfi_j_k GFBTURFS / J^_[e `hj ijcgl_^ ]cj]mcl \h[j^ / Smja_ hn_jeh[^ j[lcga? 755 Bfi_j_k i_[d
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LCK65B
LCK65N
NJM2STE2757F1
855p855p63
-LCK65B
LCK65N.
transistor 123
cj-ca
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diode 345
Abstract: 835B "LCK"
Text: LCK;B DC COMPONENTS CO., LTD. R TIRU RFDTJGJFR SQFDJBMJSTS LCK;N TFDIOJDBM SQFDJGJDBTJPOS PG SJOHMF2QIBSF SJMJDPO CRJEHF RFDTJGJFR VPMTBHF RBOHF 2 :5 lh 6555 Vhelk DURRFOT 2 ;35 Bfi_j_k GFBTURFS / J^_[e `hj ijcgl_^ ]cj]mcl \h[j^ / Smja_ hn_jeh[^ j[lcga? 6<5 Bfi_j_k i_[d
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NJM2STE2757F1
855p855p63
diode 345
835B
"LCK"
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Untitled
Abstract: No abstract text available
Text: LCI7B TIRU RFDTJGJFR SQFDJBMJSTS LCI7N TFDIOJDBM SQFDJGJDBTJPOS PG SJOHMF2QIBSF SJMJDPO CRJEHF RFDTJGJFR VPMTBHF RBOHF 2 :5 lh 6555 Vhelk DURRFOT 2 735 Bfi_j_k GFBTURFS / J^_[e `hj ijcgl_^ ]cj]mcl \h[j^ / Smja_ hn_jeh[^ j[lcga? 675 Bfi_j_k i_[d LCI NFDIBOJDBM EBTB
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NJM2STE2757F1
855p855p63
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Untitled
Abstract: No abstract text available
Text: LCL7:B TIRU RFDTJGJFR SQFDJBMJSTS LCL7:N TFDIOJDBM SQFDJGJDBTJPOS PG SJOHMF2QIBSF SJMJDPO CRJEHF RFDTJGJFR VPMTBHF RBOHF 2 :5 lh 6555 Vhelk DURRFOT 2 7: Bfi_j_k GFBTURFS / Mho e_[d[a_ / Mho `hjo[j^ nhel[a_ / Smja_ hn_jeh[^ j[lcga? 855 Bfi_j_k i_[d / J^_[e `hj ijcgl_^ ]cj]mcl \h[j^k
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NJM2STE2757F1
855p855p63
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Untitled
Abstract: No abstract text available
Text: LCK65B TIRU RFDTJGJFR SQFDJBMJSTS LCK65N TFDIOJDBM SQFDJGJDBTJPOS PG SJOHMF2QIBSF SJMJDPO CRJEHF RFDTJGJFR VPMTBHF RBOHF 2 :5 lh 6555 Vhelk DURRFOT 2 65 Bfi_j_k GFBTURFS / J^_[e `hj ijcgl_^ ]cj]mcl \h[j^ / Smja_ hn_jeh[^ j[lcga? 755 Bfi_j_k i_[d LCK NFDIBOJDBM EBTB
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LCK65B
LCK65N
NJM2STE2757F1
855p855p63
-LCK65B
LCK65N.
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CHN 549
Abstract: chn 745 CHN 645
Text: LCQ RS 55: 756 TIRU LCQ RS 65 75< RFDTJGJFR SQFDJBMJSTS TFDIOJDBM SQFDJGJDBTJPOS PG SJOHMF3QIBSF SJMJDPO CRJEHF RFDTJGJFR VPMTBHF RBOHF 3 :5 mi 6555 Vifml DURRFOT 3 745 Bgj_k_l GFBTURFS 0 J^_[f `ik jkchm_^ ]ck]ncm \i[k^ 0 Snka_ io_kfi[^ k[mcha? :5 Bgj_k_l j_[e
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NJM3STE3757F2
48gl/
67q67gg/
LCQ55:
RS756
LCQ65
CHN 549
chn 745
CHN 645
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PDF
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Untitled
Abstract: No abstract text available
Text: LCI7B DC COMPONENTS CO., LTD. R TIRU RFDTJGJFR SQFDJBMJSTS LCI7N TFDIOJDBM SQFDJGJDBTJPOS PG SJOHMF2QIBSF SJMJDPO CRJEHF RFDTJGJFR VPMTBHF RBOHF 2 :5 lh 6555 Vhelk DURRFOT 2 735 Bfi_j_k GFBTURFS / J^_[e `hj ijcgl_^ ]cj]mcl \h[j^ / Smja_ hn_jeh[^ j[lcga? 675 Bfi_j_k i_[d
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NJM2STE2757F1
855p855p63
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Untitled
Abstract: No abstract text available
Text: LCL65B TIRU RFDTJGJFR SQFDJBMJSTS LCL65N TFDIOJDBM SQFDJGJDBTJPOS PG SJOHMF2QIBSF SJMJDPO CRJEHF RFDTJGJFR VPMTBHF RBOHF 2 :5 lh 6555 Vhelk DURRFOT 2 65 Bfi_j_k GFBTURFS / Mho e_[d[a_ / Mho `hjo[j^ nhel[a_ / Smja_ hn_jeh[^ j[lcga? 6<5 Bfi_j_k i_[d / J^_[e `hj ijcgl_^ ]cj]mcl \h[j^k
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LCL65B
LCL65N
NJM2STE2757F1
855p855p63
-LCL65B
LCL65N.
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chn 745
Abstract: CHN 549 CHN 645 RS759 645B
Text: LCQ RS 55: 756 TIRU DC COMPONENTS CO., LTD. R RFDTJGJFR SQFDJBMJSTS LCQ 65 RS 75< TFDIOJDBM SQFDJGJDBTJPOS PG SJOHMF3QIBSF SJMJDPO CRJEHF RFDTJGJFR VPMTBHF RBOHF 3 :5 mi 6555 Vifml DURRFOT 3 745 Bgj_k_l GFBTURFS 0 J^_[f `ik jkchm_^ ]ck]ncm \i[k^ 0 Snka_ io_kfi[^ k[mcha? :5 Bgj_k_l j_[e
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NJM3STE3757F2
48gl/
67q67gg/
LCQ55:
RS756
LCQ65
chn 745
CHN 549
CHN 645
RS759
645B
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935B
Abstract: cj-ca
Text: LCL=B DC COMPONENTS CO., LTD. R TIRU RFDTJGJFR SQFDJBMJSTS LCL=N TFDIOJDBM SQFDJGJDBTJPOS PG SJOHMF2QIBSF SJMJDPO CRJEHF RFDTJGJFR VPMTBHF RBOHF 2 :5 lh 6555 Vhelk DURRFOT 2 =35 Bfi_j_k GFBTURFS / Mho e_[d[a_ / Mho `hjo[j^ nhel[a_ / Smja_ hn_jeh[^ j[lcga? 6<5 Bfi_j_k i_[d
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NJM2STE2757F1
855p855p63
935B
cj-ca
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KSD1692
Abstract: No abstract text available
Text: KSD1692 NPN SILICON DARLINGTON TRANSISTOR HIGH DC DURRENT GAIN LOW COLLECTOR SATURATION VOLTAGE BUILT-IN A DAMPER DIODE AT E-C • HIGH PO W ER D ISSIPATION: Pc = 1.3W T A=25°C ABSOLUTE MAXIMUM RATINGS Rating Unit C ollector- Base Voltage C haracteristic
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KSD1692
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Untitled
Abstract: No abstract text available
Text: MSD INC. ENGINEERING DATA SHEET RELAY T Y P E : F C ^ - 3 2 5 ” C V 9 [COMPUTER PART N oT7$3g3 5 2 4 ^ CUSTOM ER/SPECIFICATION: C flT flL O Ô X T 6 M REV S Ì < ^ T E ST PROCEDURE MSDP- 7 S \ T E S T REQUIREMENTS COIL dURR€MT t 3p m A 2.0 m S M A X RELEASE TIME: 5 0 m S
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ti300-Wfl
Ui/200/AC.
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