MSM56V16800F
Abstract: active suspension
Text: FEDD56V16800F-01 1Semiconductor MSM56V16800F This version: November. 2000 Previous version : 2-Bank x 1,048,576-Word × 8-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The MSM56V16800F is a 2-Bank × 1,048,576-word × 8-bit Synchronous dynamic RAM fabricated in
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FEDD56V16800F-01
MSM56V16800F
576-Word
MSM56V16800F
cycles/64ms
active suspension
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Untitled
Abstract: No abstract text available
Text: FEDD56V16160F-01 1Semiconductor MSM56V16160F This version: January. 2001 Previous version : 2-Bank x 524,288-Word × 16-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The MSM56V16160F is a 2-Bank × 524,288-word × 16-bit Synchronous dynamic RAM fabricated in
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FEDD56V16160F-01
MSM56V16160F
288-Word
16-Bit
MSM56V16160F
cycles/64ms
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MSM56V16800E
Abstract: active suspension MSM56V16800E-10 MSM56V16800E-8
Text: E2G1053-18-54 This version: Jul. 1998 MSM56V16800E ¡ Semiconductor MSM56V16800E ¡ Semiconductor 2-Bank ¥ 1,048,576-Word ¥ 8-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The MSM56V16800E is a 2-bank ¥ 1,048,576-word ¥ 8-bit synchronous dynamic RAM, fabricated
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E2G1053-18-54
MSM56V16800E
576-Word
MSM56V16800E
cycles/64
TSOPII44-P-400-0
active suspension
MSM56V16800E-10
MSM56V16800E-8
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MSM56V16160F
Abstract: active suspension
Text: FEDD56V16160F-02 1Semiconductor MSM56V16160F This version: March. 2001 Previous version : January. 2001 2-Bank x 524,288-Word × 16-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The MSM56V16160F is a 2-Bank × 524,288-word × 16-bit Synchronous dynamic RAM fabricated in
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FEDD56V16160F-02
MSM56V16160F
288-Word
16-Bit
MSM56V16160F
cycles/64ms
active suspension
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TMS418160DZ
Abstract: TM124BBJ32F TM124BBJ32U TM248CBJ32F TM248CBJ32U simm socket 40
Text: TM124BBJ32F, TM124BBJ32U 1048576 BY 32-BIT DYNAMIC RAM MODULE TM248CBJ32F, TM248CBJ32U 2097152 BY 32-BIT DYNAMIC RAM MODULE SMMS661 – JANUARY 1996 • • • • • • • • • • Organization TM124BBJ32F . . . 1 048 576 x 32 TM248CBJ32F . . . 2 097 152 × 32
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TM124BBJ32F,
TM124BBJ32U
32-BIT
TM248CBJ32F,
TM248CBJ32U
SMMS661
TM124BBJ32F
TM248CBJ32F
72-Pin
TMS418160DZ
TM124BBJ32F
TM248CBJ32F
simm socket 40
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TMS418160DZ
Abstract: TM124BBJ32F TM124BBJ32U TM248CBJ32F TM248CBJ32U
Text: TM124BBJ32F, TM124BBJ32U 1048576 BY 32-BIT DYNAMIC RAM MODULE TM248CBJ32F, TM248CBJ32U 2097152 BY 32-BIT DYNAMIC RAM MODULE SMMS661 – JANUARY 1996 • • • • • • • • • • Organization TM124BBJ32F . . . 1 048 576 x 32 TM248CBJ32F . . . 2 097 152 × 32
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TM124BBJ32F,
TM124BBJ32U
32-BIT
TM248CBJ32F,
TM248CBJ32U
SMMS661
TM124BBJ32F
TM248CBJ32F
72-Pin
TMS418160DZ
TM124BBJ32F
TM248CBJ32F
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MSM56V16400D
Abstract: active suspension D-10 D-12 TSOPII44-P-400-0
Text: Pr E2G1046-18-25 el im y 2-Bank ¥ 2,097,152-Word ¥ 4-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The MSM56V16400D/DH is a 2-bank ¥ 2,097,152-word ¥ 4-bit synchronous dynamic RAM, fabricated in Oki's CMOS silicon-gate process technology. The device operates at 3.3 V. The
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E2G1046-18-25
152-Word
MSM56V16400D/DH
cycles/64
MSM56V16400D/DH
TSOPII44-P-400-0
MSM56V16400D
active suspension
D-10
D-12
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MSM56V16800D
Abstract: D-10 D-12 MSM56V16800D-10 MSM56V16800D-12 MSM56V16800DH-15
Text: Pr E2G1047-18-25 el im y 2-Bank ¥ 1,048,576-Word ¥ 8-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The MSM56V16800D/DH is a 2-bank ¥ 1,048,576-word ¥ 8-bit synchronous dynamic RAM, fabricated in Oki's CMOS silicon-gate process technology. The device operates at 3.3 V. The
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E2G1047-18-25
576-Word
MSM56V16800D/DH
cycles/64
MSM56V16800D/DH
TSOPII44-P-400-0
MSM56V16800D
D-10
D-12
MSM56V16800D-10
MSM56V16800D-12
MSM56V16800DH-15
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MSM56V16160D
Abstract: MSM56V16160D-10 MSM56V16160D-12 MSM56V16160DH-15
Text: Pr E2G1049-18-33 el im y 2-Bank ¥ 524,288-Word ¥ 16-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The MSM56V16160D/DH is a 2-bank ¥ 524,288-word ¥ 16-bit synchronous dynamic RAM, fabricated in Oki's CMOS silicon-gate process technology. The device operates at 3.3 V. The
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E2G1049-18-33
288-Word
16-Bit
MSM56V16160D/DH
cycles/64
MSM56V16160D/DH
MSM56V16160D
MSM56V16160D-10
MSM56V16160D-12
MSM56V16160DH-15
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TSOPII44-P-400-0
Abstract: active suspension MSM56V16800F
Text: This version : Dec.1999 Semiconductor MSM56V16800F 2-Bank ´ 1,048,576 Word ´ 8 Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The MSM56V16800F is a 2-Bank ´ 1,048,576-word ´ 8 bit Synchronous dynamic RAM, fabricated in OKI’s CMOS silicon-gate process technology. The device operates at 3.3V. The inputs and outputs are LVTTL
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MSM56V16800F
MSM56V16800F
576-word
cycles/64
TSOPII44-P-400-0
active suspension
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tms418169dz
Abstract: 72 pin simm pinout TM248GBK32F TM124FBK32F TM124FBK32U TM248GBK32U 4M byte DRAM TM248GBK32
Text: TM124FBK32F, TM124FBK32U 1048576 BY 32-BIT DYNAMIC RAM MODULE TM248GBK32F, TM248GBK32U 2097152 BY 32-BIT DYNAMIC RAM MODULE SMMS660 – MARCH 1996 D D D D D D D D D D Organization TM124FBK32F . . . 1 048 576 x 32 TM248GBK32F . . . 2 097 152 × 32 Single 5-V Power Supply ±10% Tolerance
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TM124FBK32F,
TM124FBK32U
32-BIT
TM248GBK32F,
TM248GBK32U
SMMS660
TM124FBK32F
TM248GBK32F
72-Pin
tms418169dz
72 pin simm pinout
TM248GBK32F
TM124FBK32F
4M byte DRAM
TM248GBK32
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active suspension
Abstract: MSM56V16160F MSM56V16160F-8 TSOPII50-P-400-0
Text: This version : Sep.1999 Semiconductor MSM56V16160F 2-Bank ´ 524,288 Word ´ 16 Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The MSM56V16160F is a 2-Bank ´ 524,288-word ´ 16 bit Synchronous dynamic RAM, fabricated in OKI’s CMOS silicon-gate process technology. The device operates at 3.3V. The inputs and outputs are LVTTL
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MSM56V16160F
MSM56V16160F
288-word
16bit
cycles/64
active suspension
MSM56V16160F-8
TSOPII50-P-400-0
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TMS418160DZ
Abstract: TMS44460DJ TM124MBJ36F TM124MBJ36U TM248NBJ36F TM248NBJ36U
Text: TM124MBJ36F, TM124MBJ36U 1048576 BY 36-BIT DYNAMIC RAM MODULE TM248NBJ36F, TM248NBJ36U 2097152 BY 36-BIT DYNAMIC RAM MODULE SMMS662 – MAY 1996 D D D D D D D D D D Organization TM124MBJ36F . . . 1 048 576 x 36 TM248NBJ36F . . . 2 097 152 × 36 Single 5-V Power Supply ±10% Tolerance
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TM124MBJ36F,
TM124MBJ36U
36-BIT
TM248NBJ36F,
TM248NBJ36U
SMMS662
TM124MBJ36F
TM248NBJ36F
72-Pin
TMS418160DZ
TMS44460DJ
TM124MBJ36F
TM248NBJ36F
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Untitled
Abstract: No abstract text available
Text: 8MB 72PIN EDO D RAM DIMM With 1Mx16 5VOLT TS2MEDM326R Description The TS2MEDM326R is a 2M x 32-bit dynamic RAM card. This consists of 4 pcs 1Mx16-bit, 5volt, EDO mode Placement DRAMs in TSOP assembled on the printed circuit board. The TS2MEDM326R is optimized for application to
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72PIN
1Mx16
TS2MEDM326R
TS2MEDM326R
32-bit
1Mx16-bit,
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101490
Abstract: P22n HM50464P-12 50464 ram
Text: Quick Reference Guide to Hitachi 1C Memories Package Information Reliability of Hitachi 1C Memories Applications MOS Static RAM MOS Pseudo Static RAM Application Specific Memory MOS Dynamic RAM MOS Dynamic RAM Module MOS Mask ROM MOS PROM ECL RAM HITACHI 1C MEMORY
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ADE-40
101490
P22n
HM50464P-12
50464 ram
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rca thyristor manual
Abstract: HN623258 101490
Text: Quick Reference Guide to Hitachi 1C Memories Package Information Reliability of Hitachi 1C Memories Applications MOS Static RAM MOS Pseudo Static RAM Application Specific Memory MOS Dynamic RAM MOS Dynamic RAM Module MOS Mask ROM MOS PROM ECL RAM P> Jc^< j
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TMS418160DZ
Abstract: No abstract text available
Text: I TM124MBK36G, TM124MBK36V1048576 BY 36-BIT DYNAMIC RAM MODULE TM248NBK36G, TM248NBK36V 2097152 BY 36-BIT DYNAMIC RAM MODULE SMMS651A - MAY 1995 - REVISED JUNE 1995 Organization TM124MBK36G . . . 1 048 576 x 36 TM248NBK36G . . . 2 097 152 x 36 Single 5-V Power Supply ±10% Tolerance
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TM124MBK36G,
TM124MBK36V1048576
36-BIT
TM248NBK36G,
TM248NBK36V
SMMS651A
TM124MBK36G
TM248NBK36G
72-Pln
TMS418160DZ
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P7070
Abstract: ic 723 cn 162C-D Tms418160dz
Text: TM124MBK36G, TM124MBK36V1048576 BY 36-BIT DYNAMIC RAM MODULE TM248NBK36G, TM248NBK36V 2097152 BY 36-BIT DYNAMIC RAM MODULE SMMS651 A - MAY 1995 - REVISED JUNE 1995 ! • • • • • • • • • Organization 1 048 576 x 36 TM124MBK36G TM248NBK36G 2 097 152 x 36
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TM124MBK36G,
TM124MBK36V1048576
36-BIT
TM248NBK36G,
TM248NBK36V
SMMS651
TM124MBK36G
TM248NBK36G
72-Pln
P7070
ic 723 cn
162C-D
Tms418160dz
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ana 608
Abstract: No abstract text available
Text: MSC23836B-xxBS20/DS20 97.10.11 OKI semiconductor MSC23836B-XXBS20/DS20 8,388,608 Word By 36 Bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE_ _ GENERAL DESCRIPTION The Oki MSC23836B-xxBS20/DS20 is a fully decoded, 8,388,608 word X 36 bit CMOS dynamic random
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MSC23836B-xxBS20/DS20
MSC23836B-xxBS20/DS20
72-pin
MSC23836B-xxBS20
MSC23836B-xxDS20
ana 608
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ANA 608
Abstract: No abstract text available
Text: MSC23836B-xxBS20/DS20 97.10,11 OKI semiconductor MSC23836B-XXBS20/DS20 8,388,608 Word By 36 Bit DYNAMIC RAM MODULE: FAST PAGE MODE TYPE_ GENERAL DESCRIPTION The Oki MSC23836B-xxBS20/DS20 is a fully decoded, 8,388,608 word X 36 bit CMOS dynamic random
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MSC23836B-xxBS20/DS20
MSC23836B-xxBS20/DS20
72-pin
MSC23836B-xxBS20
MSC23836B-xxDS20
ANA 608
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tms418169dz
Abstract: bk 16D M124F TMS418169 TM248GBK32F TM248GBK32 TM124FBK32U TM124FBK32F TM248GBK32U
Text: TM124FBK32F, TM124FBK32U 1 048576 BY 32-BIT DYNAMIC RAM MODULE TM248GBK32F, TM248GBK32U 2097152 BY 32-BIT DYNAMIC RAM MODULE S M M S 6 6 0 -M A R C H 1996 • O r ga ni z a t i on TM1 24 F BK 3 2 F . . . 1 048 576 x 32 T M2 48 GB K3 2F . . . 2 097 1 52 x 32
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TM124FBK32F,
TM124FBK32U
32-BIT
TM248GBK32F,
TM248GBK32U
72-Pin
tms418169dz
bk 16D
M124F
TMS418169
TM248GBK32F
TM248GBK32
TM124FBK32F
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MSC23436B-XXBS10
Abstract: MSC23436B-XXDS10
Text: MSC23436B-XX BS10/DS10 98.11.16 OKI semiconductor MSC23436B-XXBS10/DS10 4,194,304 Word By 36-Bit DYNAMIC RAM MODULE : FAST PAGE MOPE TYPE GENERAL DESCRIPTION The Oki MSC23436B-xxBS10/DS10 is a fully decoded, 4,194,304 word X 36 bit CMOS dynamic random access
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SC23436B-XX
10/DS10
MSC23436B-xxBS10/DS10
36-Bit
MSC23436B-xxBS10/DS10
16MbDRAMs
72-pin
MSC23436B-XXBS10
MSC23436B-XXDS10
MSC23436B-XXBS10
MSC23436B-XXDS10
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418160d
Abstract: No abstract text available
Text: TM124MBJ36F, TM124MBJ36U 1 048576 BY 36-BIT DYNAMIC RAM MODULE TM248NBJ36F, TM248NBJ36U 2097152 BY 36-BIT DYNAMIC RAM MODULE S M M S 662-M A Y 1996 • Or ga n i za t i o n T M 1 2 4 M B J 3 6 F . . . 1 0 4 8 576 x 36 T M 2 4 8 N B J36F . . . 2 09 7 1 52 x 36
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TM124MBJ36F,
TM124MBJ36U
36-BIT
TM248NBJ36F,
TM248NBJ36U
662-M
72-Pin
418160d
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Untitled
Abstract: No abstract text available
Text: IS41LV32256 256K x 32 8-Mbit EDO DYNAMIC RAM 3.3V, 100/83/66 MHz ADVANCE INFORMATION APRIL 1998 FEATURES DESCRIPTION • 262,144-word by 32-bit organization The IS41LV32256 is organized in a 262,122 x 32-bit CMOS Dynamic Random Access Memory. Four CAS signals
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IS41LV32256
144-word
32-bit
IS41LV32256
DR007-0D
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