Untitled
Abstract: No abstract text available
Text: , iJnc. TELEPHONE: 973 376-2922 (212)227-6005 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. FAX: (973) 376-8960 MTP5N40E TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate This advanced high voltage TMOS E-FET is designed to
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MTP5N40E
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Untitled
Abstract: No abstract text available
Text: , Unc, 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 MTP2N60E TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate This high voltage MOSFET uses an advanced termination
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MTP2N60E
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HCS08
Abstract: MC1321 MC13211 MC13212 MC13213 MC13214 TPM module hcs08 microcontroller architecture
Text: MC13211/212/213/214 ZigBee - Compliant Platform 2.4 GHz Low Power Transceiver for the IEEE 802.15.4 Standard plus Microcontroller Reference Manual Document Number: MC1321xRM Rev. 1.1 10/2006 How to Reach Us: Home Page: www.freescale.com E-mail: support@freescale.com
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MC13211/212/213/214
MC1321xRM
CH370
MC1321x
HCS08
MC1321
MC13211
MC13212
MC13213
MC13214
TPM module
hcs08 microcontroller architecture
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MC1321
Abstract: bpl DVD player circuit diagram HCS08 MC13211 MC13212 MC13213 PWM generation using TPM module GB60 DVD BOARD LAYOUT BF Marking MSE9S08GB60A
Text: MC13211/212/213 ZigBee - Compliant Platform 2.4 GHz Low Power Transceiver for the IEEE 802.15.4 Standard plus Microcontroller Reference Manual Document Number: MC1321xRM Rev. 1.6 05/2010 How to Reach Us: Home Page: www.freescale.com E-mail: support@freescale.com
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MC13211/212/213
MC1321xRM
CH370
MC1321x
MC1321
bpl DVD player circuit diagram
HCS08
MC13211
MC13212
MC13213
PWM generation using TPM module GB60
DVD BOARD LAYOUT
BF Marking
MSE9S08GB60A
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Untitled
Abstract: No abstract text available
Text: MC13211/212/213 ZigBee - Compliant Platform 2.4 GHz Low Power Transceiver for the IEEE 802.15.4 Standard plus Microcontroller Reference Manual Document Number: MC1321xRM Rev. 1.4 08/2009 How to Reach Us: Home Page: www.freescale.com E-mail: support@freescale.com
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MC13211/212/213
MC1321xRM
CH370
MC1321x
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Untitled
Abstract: No abstract text available
Text: 10aucti, Dnc. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Designer's Data Sheet TMOS E-FET ™ MTP4N80E Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate This high voltage MOSFET uses an advanced termination
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10aucti,
MTP4N80E
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689S08A
Abstract: ZigBee RF4CE Stack MC13211 4L11Y MC9S08GBA ce 4L11Y
Text: MC13211/212/213 ZigBee - Compliant Platform 2.4 GHz Low Power Transceiver for the IEEE 802.15.4 Standard plus Microcontroller Reference Manual Document Number: MC1321xRM Rev. 1.5 03/2010 How to Reach Us: Home Page: www.freescale.com E-mail: support@freescale.com
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MC13211/212/213
MC1321xRM
CH370
MC1321x
689S08A
ZigBee RF4CE Stack
MC13211
4L11Y
MC9S08GBA
ce 4L11Y
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Untitled
Abstract: No abstract text available
Text: <$£mi- l on ., Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 TELEPHONE: (973 376-2922 (212)227-6005 FAX: (973) 376-8960 U.SA MTP25N05E TMOS IV risvvc;i i iv^iui i_ii«7i*b iiciiioioiui N-Channel Enhancement-Mode Silicon Gate This advanced "E" series of TMOS power MOSFETs is designed to withstand high
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MTP25N05E
180lTyp)
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Untitled
Abstract: No abstract text available
Text: CH1786 Family - 2400bps Modem Ultra Small Module Cermetek M icro e le ctro n ics Ine u IT C' f y,.#h .,1 ~ 7 ö b V k < ^ ¡fi. Now U.L 1459 Approvedjj IO FEATURES • Supports Standards CCITT V.22bis, V.22, Bell 212, and Bell 103 FCC Part 68 approved arid DOC approvable
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CH1786
2400bps
22bis,
-20to
CH1786ET
-40to
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1RFD120
Abstract: 6ati T3B diode 2s4 4pin XSTR IRFD212
Text: MOTOROLA SC IM E L> I X S T R S /R F b 3 b ?2 S 4 Q G Ô IT E l 4 | MOTOROLA • I SEM ICO NDUCTOR I TECHNICAL DATA IR FD 210 IRFD211 IR FD 212 IR FD 213 Advance Information Sm all-Sign al T M O S Field Effect Transistors N -C h ann el Enh an cem en t-M ode
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IRFD210
IRFD211
IRFD212
IRFD213
I0I01Â
1RFD120
6ati
T3B diode
2s4 4pin
XSTR
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NE800495-4
Abstract: GaAs MESFET NE900474-15 NE800400 NE8004 NE800296 NES2527-20B NE900400 NES1417-20B NE800196
Text: Power GaAs FET Selection Guide C-BAND INTERNALLY MATCHED DEVICES Typical Specifications @ T a = 2 5 °C Mr 1 v . j Limar PomrMdad Giln <« Effldtncy %) vn (6Hi) (dBm) NEZ4450-15D 4.4 to 5.1 42.5 10.0 35 10.0 NEZ4450-15DD 4.410 5.1 42.5 10.0 35 NEZ4450-8D
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NEZ4450-15D
NEZ4450-15DD
NEZ4450-8D
NEZ4450-8DD
MEZ4450-4D
NEZ4450-4DD
MEZ5964-15D
NEZ5964-15DD
NEZ5964-8D
KEZ5964-8DD
NE800495-4
GaAs MESFET
NE900474-15
NE800400
NE8004
NE800296
NES2527-20B
NE900400
NES1417-20B
NE800196
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ATF-10735
Abstract: ATF-20135 ATF20135
Text: AVANTEK INC Ot.E D J A A V A N T E IC •E l\ U M lU h DDGSTbfl 1 | ATF-20135 ATF-10735 2-12 GHz General Purpose Gallium Arsenide FET T-31-25 Avantek micro-X Package Features .085 • High Associated Gain 12.5 dB typical at 4 GHz • Low Bias Vd s =2V, lDs =20 mA
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ATF-20135
ATF-10735)
T-31-25
ATF-20135
ATF-10735
ATF20135
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Untitled
Abstract: No abstract text available
Text: GaAs MMIC SPST FET Switch in 8 Lead SOIC Package Non-Reflective DC-2.5 GHz EBAlpha AS349-12 Features • S ingle Positive C ontrol ■ Input and O utput N o n -R e fle ctive ■ Low C ost Pin Out Description Pin 1 T he A S 34 9 is a S P S T M M IC sw itch, absorptive on
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OCR Scan
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AS349-12
AK006L1-01
AS004M2-11
AT002N5-00
AK006L1-10
AS004R2-08
AT002N5-01
AK006M1-00
AS004R2-11
AT002N5-10
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AD004T2-00
Abstract: AD004T2-11 AE002M2-29 AK006R2-00 AK006R2-01 AK006R2-10 AS006M1-01 AS006M1-10 AS349-12 AH002R2-11
Text: GaAs MMIC SPST FET Switch in 8 Lead SOIC Package Non-Reflective DC-2.5 GHz EBAlpha AS349-12 Features • S ingle Positive C ontrol ■ Input and O utput N o n -R e fle ctive ■ Low C ost Pin Out Description Pin 1 T he A S 34 9 is a S P S T M M IC sw itch, absorptive on
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OCR Scan
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AS349-12
AS349
Characte32
AS004M1-08
AT001D4-31
AK004R2-11
AS004M1-11
AT001D6-31
AK006L1-00
AS004M2-08
AD004T2-00
AD004T2-11
AE002M2-29
AK006R2-00
AK006R2-01
AK006R2-10
AS006M1-01
AS006M1-10
AH002R2-11
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AT002D8-25
Abstract: AD004T2-00 AD004T2-11 AE002M2-29 AK006R2-00 AK006R2-01 AK006R2-10 AS006M1-01 AS006M1-10
Text: GaAs MMIC FET 4 Bit Digital Attenuator In 16 Lead SOIC1,2 ,4 ,8 dB Bits DC-2 GHz AT002D8-25 Features 1 , 2 , 4 , 8 dB Bits D esigned for C om m ercial Applications S urface M ount 16 Lead S O IC Low P ow er C onsum ption 8 dB 1 dB 2 dB 4 dB Description T h e A T 0 0 2 D 8 -2 5 is a M M IC F E T Digital A ttenuator
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AT002D8-25
04M1-08
AT001D4-31
AK004R2-11
AS004M1-11
AT001D6-31
AK006L1-00
AS004M2-08
AT002D8-31
AD004T2-00
AD004T2-11
AE002M2-29
AK006R2-00
AK006R2-01
AK006R2-10
AS006M1-01
AS006M1-10
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AS419M4-49
Abstract: AD004T2-00 AD004T2-11 AK006R2-01 AK006R2-10 AS002M4-00 AS006M1-01 AS006M1-10
Text: GaAs MMIC FET SP4T Non-Reflective Switch In 24 Lead SOIC Package DC-3 GHz SlAlphi AS419M 4-49 Features • S urface M ount 2 4 Lead S O IC P ackage ■ Designed for Commercial Applications Description T h e A S 4 1 9 M 4 - 4 9 is a n o n -reflective S P 4 T F E T
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AS419M4-49
AS004M1-08
AT001D4-31
AK004R2-11
AS004M1-11
AT001D6-31
AK006L1-00
AS004M2-08
AT002D8-31
AD004T2-00
AD004T2-11
AK006R2-01
AK006R2-10
AS002M4-00
AS006M1-01
AS006M1-10
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spf 316
Abstract: spf8
Text: SPF-684, -884 2-12 GHz Low Noise PHEMT GaAs FET August, 1993 84 Plastic Package Features - Pseudomorphlc HEMT Technology - Low Noise Figure: 0.5dB Typical at 4 GHz - High Associated Gain: 15dB Typical at 4 GHz - Low Cost Plastic Package - Tape and Reel Packaging Available
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SPF-684,
SPF-684
spf 316
spf8
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Untitled
Abstract: No abstract text available
Text: GaAs 30 dB MMIC FET Voltage Variable Attenuator Dual Bias DC-2.5 GHz AT002N3-12 Features • 8 Lead SOIC Package ■ Dual Bias ■ 30 dB Range ■ Low DC Drain ■ Low Insertion Loss < 1.2 dB ■ Low Phase Shift ■ Bridged “T” Design, N on-R eflective
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OCR Scan
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AT002N3-12
AT002N3-12
AK006L1-01
AS004M2-11
AT002N5-00
AK006L1-10
AS004R2-08
AT002N5-01
AK006M1-00
AS004R2-11
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Untitled
Abstract: No abstract text available
Text: GaAs MMIC FET 4 Bit Digital Attenuator With Driver 1,2,4,8 dB Bit Values DC-2 GHz EBA lph AK402D4-24 Features • D esigned fo r C om m ercial A pplications ■ S urface M ount 14 Lead SO IC ■ Low DC C urrent < 1 6 m A Total ■ Integral D river C om patible
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OCR Scan
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AK402D4-24
AK006L1-01
AS004M2-11
AT002N5-00
AK006L1-10
AS004R2-08
AT002N5-01
AK006M1-00
AS004R2-11
AT002N5-10
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Untitled
Abstract: No abstract text available
Text: GaAs MMIC SPDT FET Switch Non-Reflective DC-6 GHz • EBAlph . . . . - . * »■ ■ ■ ■V.s-l AS006M2-01, AS006M2-10, AS004M2-08, AS004M2-11 Features ■ Broadband DC-6 GHz ■ Non-Reflective ■ Low DC Power Consumption ■ Excellent Intermodulation ProductsYTemp. Stability
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OCR Scan
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AS006M2-01,
AS006M2-10,
AS004M2-08,
AS004M2-11
AS006M2-10
MIL-STD-883
AK006L1-01
AT002N5-00
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Untitled
Abstract: No abstract text available
Text: GaAs 15 dB MMIC FET Voltage Variable Attenuator DC-2 GHz AF002N2-12 Features • Single Voltage Control ■ Low Cost ■ 15 dB Range ■ Very Low DC Dissipation ■ Easily Adapted for Positive Control ■ Non-Reflective Description Absolute Maximum Ratings
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OCR Scan
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AF002N2-12
AF002N2-12
AK006L1-01
AS004M2-11
AT002N5-00
AK006L1-10
AS004R2-08
AT002N5-01
AK006M1-00
AS004R2-11
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Untitled
Abstract: No abstract text available
Text: GaAs MMIC FET Diversity Switch In 8 Lead SOIC DC-2.5 GHz EBAlph ADC02D2-12 Features Low Cost Independent Four Port Switching Individual Voltage Control on Each Port Description The ADC02D2 is a 4 port switch with independent DC voltage control on each port.
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OCR Scan
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ADC02D2-12
ADC02D2
DC--1000
DC--2500
DC--500
MHzT002D8-31
AK006L1-01
AS004M2-11
AT002N5-00
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AF002C1-32
Abstract: AF002C1-39 E 212 fet AS006M2-10 AD004T2-00 AD004T2-11 AK006R2-01 AS006M1-01 S443
Text: GaAs MMIC Control FET in SOT 143 03A lp ft DC-2.5 GHz AF002C1-32 Features • Low Cost ■ Small SOT 143 Package ■ Series or Shunt Configuration ■ Low DC Current Drain ■ Ideal Switch Building Block Absolute Maximum Ratings Description RF Input Power:
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OCR Scan
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AF002C1-32
AF002C1-32
AF002C1-39
AS004L2-11
AT001D3â
AK004M2-11
AS004M1-08
AT001D4-31
AK004R2-11
AS004M1-11
E 212 fet
AS006M2-10
AD004T2-00
AD004T2-11
AK006R2-01
AS006M1-01
S443
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PDF
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AS117-45
Abstract: AD004T2-00 AK006R2-01
Text: GaAs MMIC FET10 Watt Diversity Switch In SOW 16 Package DC-2.0 GHz • " " ■ ■ ■ « ■ ■ ■ 03 Alpha t v ■,. : v r - r ^ - .n I ^w A S 11 7 -4 5 Features High Power P - 1 dB > 10 Watts Integrated Decoder Chip that Provides Two Line Voltage Control
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OCR Scan
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FET10
AS117-45
DC-2000
DC-1000
04M1-08
AT001D4-31
AK004R2-11
AS004M1-11
AD004T2-00
AK006R2-01
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PDF
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