eco-pac
Abstract: transistor P18
Text: ECO-PACTM 2 CoolMOS Power MOSFET in ECO-PAC 2 ID25 VDSS RDSon PSHM 40/06 N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base = 38 A = 600 V Ω = 70 mΩ 1 L4 L6 L9 P18 R18 K12 A1 E10 F10 NTC Preliminary Data Sheet
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Untitled
Abstract: No abstract text available
Text: ECO-PACTM 2 Power MOSFET PSHM 120/01 in ECO-PAC 2 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family L4 L6 = 75 A = 100 V Ω = 25 mΩ < 200 ns K12 A1 E10 F10 L9 P18 R18 ID25 VDSS RDSon trr NTC Preliminary Data Sheet K13 MOSFETs Symbol Test Conditions
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VKM40-06P1
Abstract: eco-pac CoolMOS Power Transistor power mosfet 200A mosfet Vds 50 Vgsth a22055 welding mosfet
Text: VKM40-06P1 ID25 = 38 A VDSS = 600 V Ω RDSon = 70 mΩ CoolMOS Power MOSFET in ECO-PAC 2 N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base 1 L4 L6 A1 L9 K 12 P 18 R 18 NTC Preliminary data sheet E10 F10 X 15 K 13
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VKM40-06P1
B25/50
VKM40-06P1
eco-pac
CoolMOS Power Transistor
power mosfet 200A
mosfet Vds 50 Vgsth
a22055
welding mosfet
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VKM40-06P1
Abstract: eco-pac vkm40
Text: VKM40-06P1 ID25 = 38 A VDSS = 600 V Ω RDSon = 70 mΩ CoolMOS Power MOSFET in ECO-PAC 2 N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base 1 L4 L6 A1 L9 K 12 P 18 R 18 NTC Preliminary data sheet E10 F10 X 15 K 13
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VKM40-06P1
dissipa05
B25/50
VKM40-06P1
eco-pac
vkm40
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Untitled
Abstract: No abstract text available
Text: VKM 60-01P1 HiPerFETTM Power MOSFET ID25 = 75 A VDSS = 100 V Ω RDSon = 25 mΩ H-Bridge Topology in ECO-PAC 2 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family trr < 200 ns L4 L6 A1 K 12 E10 P 18 R 18 NTC Preliminary data sheet L9 K 13 F10 X 15
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60-01P1
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Untitled
Abstract: No abstract text available
Text: VKM 60-01P1 HiPerFETTM Power MOSFET H-Bridge Topology in ECO-PAC 2 ID25 = 75 A VDSS = 100 V Ω RDSon = 25 mΩ N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family trr < 200 ns L4 L6 K 12 A1 L9 E10 P 18 R 18 NTC K 13 F10 X 15 K10 T 18 V 18 X 18
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60-01P1
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60-01P1
Abstract: eco-pac
Text: VKM 60-01P1 HiPerFETTM Power MOSFET H-Bridge Topology in ECO-PAC 2 ID25 = 75 A VDSS = 100 V Ω RDSon = 25 mΩ N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family trr < 200 ns L4 L6 A1 K 12 L9 E10 P 18 R 18 NTC K 13 F10 X 15 K10 T 18 V 18 X 18
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60-01P1
60-01P1
eco-pac
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Semikron k5 m6
Abstract: semikron skn 50/04 SKN 21 Semikron SKR 21 SKN 50/08 semikron skr 50/08 diode skn 5/ 08 semikron Semikron SKR 60 F 15 SKR 50 f5010
Text: VRSM VRRM IFRMS maximum values for continuous operation 100 A Fast Recovery Rectifier Diodes IFAV (sin. 180; Tcase = . . . ) 50 A (105 °C) 50 A (95 °C) SKN 2 F 50 SKR 2 F 50 trr = 200 ns V 400 SKN 2 F 50/04 SKN 2 F 50/04 UNF SKR 2 F 50/04 SKR 2 F 50/04 UNF
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180/rec
Semikron k5 m6
semikron skn 50/04
SKN 21
Semikron SKR 21
SKN 50/08
semikron skr 50/08
diode skn 5/ 08 semikron
Semikron SKR 60 F 15
SKR 50
f5010
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Untitled
Abstract: No abstract text available
Text: Silicon Avalanche Photodiode SAR-/SARP-Series DESCRIPTION The SAR500-Series is based on a “reach-through” structure for excellent quantum efficiency and high speed. The peak sensitivity in the NIR region enables rangefinding applications with pulsed laser diodes.
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SAR500-Series
SARP500-Series
SAR500
SARP500
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Untitled
Abstract: No abstract text available
Text: Silicon Avalanche Photodiode SAR-/SARP-Series DESCRIPTION The SAR500-Series is based on a “reach-through” structure for excellent quantum efficiency and high speed. The peak sensitivity in the NIR region enables rangefinding applications with pulsed laser diodes.
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SAR500-Series
SARP500-Series
SAR500
SARP500
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Untitled
Abstract: No abstract text available
Text: Silicon Avalanche Photodiode SAR-/SARP-Series DESCRIPTION The SAR500-Series is based on a “reach-through” structure for excellent quantum efficiency and high speed. The peak sensitivity in the NIR region enables rangefinding applications with pulsed laser diodes.
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SAR500-Series
SARP500-Series
SAR500
SARP500
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SARP500
Abstract: SAR-500
Text: Silicon Avalanche Photodiode SAR-/SARP-Series DESCRIPTION The SAR500-Series is based on a “reach-through” structure for excellent quantum efficiency and high speed. The peak sensitivity in the NIR region enables rangefinding applications with pulsed laser diodes.
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SAR500-Series
SARP500-Series
SAR500
SARP500
SAR-500
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ME101203
Abstract: ME101603 powerex ME10
Text: 1SE » POWEREX INC fO M C R E • 72T4fc»21 QQQ33ST 4 ■ X M E10 Powerex, Ino., HIIUs Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, Fiance (43) 72.75.15 T -A Z -oy 03 Three-Phase Diode Bridge Module
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72T4fc
QQQ33ST
BP107,
Amperes/600-1600
GD033b2
ME101203
ME101603
powerex ME10
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16NE10
Abstract: No abstract text available
Text: STD16NE10 N - CHANNEL 100V - 0.07Q - 16A - IPAK/DPAK STripFET MOSFET TYPE V dss S TD 16N E10 . m . . . . . 100 V Id *DS on < 0.1 Q 16 A TYPICAL R ds(oii) = 0.07 Q EXCEPTIO NALdv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED APPLICATION ORIENTED
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STD16NE10
O-251)
O-252)
O-251
O-252
16NE10
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Untitled
Abstract: No abstract text available
Text: SCHOTTKY BARRIER DIODE E10 Q S 0 9 E 1 0 Q S 1 0 1 .1 A / 9 0 — 100V FEATURES 1 .6 .0 6 3 M A X 1 .8 (0 7 1 ) 1.41.055) ° Similar to TO-243AB (SOT-89) Case ° Surface Mount Device â.4(.Ô94) L ° Low Forward Voltage Drop m i 1.21.047) 0.W .031) ° Low Power Loss, High Efficiency
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O-243AB
OT-89)
15x15mm
bbl5123
bblS123
E10QS10
E10QS09
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20E10
Abstract: C1303 20E1 20E2 20E4 20E6 20E8 231S 25CC
Text: SILICON RECTIFIER DIODE i 2 0 E1~ 2 0 E10 .7 a / i o o ~ i o o o v FEATURES ° Miniature Size ° Low Forward Voltage Drop ° Low Reverse Leakage Current ” High Surge Capability ° 52mm Inside Tape Spacing Package Available MAXIMUM R A T IN G S \ type Voltage Rating
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20E10
15x15mm
blS123
00D23
C1303
20E1
20E2
20E4
20E6
20E8
231S
25CC
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E10DS2
Abstract: E10DS4
Text: SILICON RECTIFIER DIODE ia / io o ~ 4 oov e io d s i FEATURES e io d s 1 8 071, 1.4(.055 OTO-243AB (SOT-89) Case .L 1.2(.047) 0.81.031) ° Low Reverse Leakage Current e io d s 4 1.6I.0631MAX 2.4(,094) I [ 4.251167) ° Surface Mount Device o Low Forward Voltage Drop
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OTO-243AB
OT-89)
E10DS2
E10DS4
E10DS4
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SKR1M40
Abstract: diodos rectificadores SKN1M40 SKE4F SKN60F rectificadores 1.SKE 3500 retificador DO-205 SKE2F
Text: SENIKRON INC DtE I | filBbb?! 0001514 3 | 7 J - 2,^ t ^ r Fast Rectifier Diodes Schnelle Gleichrichterdioden Types V rsm V rrm Ifrms V A 7 1 SKE 4 F 1/01 102 /04 /06 /08 /10 SKE 4 G 10/02 /04 /OS SKE 2 F 2/01 /02 /04 /06 SKE 4 F 2/01 102 /04 m SKE4G2D/02
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SKN2F17/04*
SKN3F20/06*
SKN2FS0/04*
SKN60F12
SKR60F12
SKR135F08
SKR140F12
SKR2F17/04*
SKR3F20/06*
SKE4G2D/02
SKR1M40
diodos rectificadores
SKN1M40
SKE4F
SKN60F
rectificadores
1.SKE 3500
retificador
DO-205
SKE2F
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414 B zenar diode
Abstract: zener diode on 822 zener diode t5 umi 122 ZENER DIODE SMA marking E10 DIODE ci 741A je200 marking AHL ZENER A4
Text: TAIWAN SEMICONDUCTOR s à RoHS 1S M A 4737 - 1S M A 200Z 1.0 W atts Surface Mount Silicon Zener Diode COMPLIANCE S M A /D O -2 1 4 A C n I n Features -0- Q ualified as p er AEC-Q101 4- F or surface m ounted applications in order to optim ize board space Low profile package
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1SMA4737
1SMA200Z
SMA/DO-214AC
AEC-Q101
MIL-STD-750.
1SMA200Z)
414 B zenar diode
zener diode on 822
zener diode t5
umi 122
ZENER DIODE SMA
marking E10 DIODE
ci 741A
je200
marking AHL
ZENER A4
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3TC56
Abstract: tea5500 zener diode E7
Text: Product specification Philips Semiconductors Integrated Circuits TEA5500 TEA5500T Coded locking circuit for security systems GENERAL DECRIPTION The TEA5500 is an encoder/decoder circuit, for security systems. The system has the ability to transmit a complex code between an encoding and decoding unit by infrared radiation. The device can
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TEA5500
TEA5500T
BPW50
LA194
3TC56
zener diode E7
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BPW50
Abstract: coy89a TEA5500 BC327 TEA5500T E9 amplifier E9 amplifier 16 pin zener diode E7
Text: Philips Semiconductors Integrated Circuits ezco^iz. V»,/ C— * I I Product specification TEA5500 TEA5500T Coded locking circuit for security systems GENERAL DECRIPTION The TEA5500 is an encoder/decoder circuit, for security systems. The system has the ability to
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TEA5500
TEA5500T
TEA5500
BC327
COY89A
7Z81692
BPW50
TEA5500T
BPW50
coy89a
BC327
E9 amplifier
E9 amplifier 16 pin
zener diode E7
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TEA5500
Abstract: PJ 986 R/pj 989 diode iclock 990 E9H diode 16-LEAD DIODE AM MODULATOR ZENER DIODE E1 IEC134 TEA5500T
Text: Product specification Philips Semiconductors Integrated Circuits TEA5500 TEA5500T Coded locking circuit for security systems G E N E R A L D E C R IP T IO N The T E A 5 5 0 0 is an encoder/decoder circuit, fo r security systems. The system has the ability to
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TEA5500
TEA5500T
IBC558
BC327
TEA5551
TEA5591
PJ 986
R/pj 989 diode
iclock 990
E9H diode
16-LEAD
DIODE AM MODULATOR
ZENER DIODE E1
IEC134
TEA5500T
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TEA5500
Abstract: cqy89a t162a A5500 CQY89 TEA5500T
Text: TEA5500 TEA5500T CODED LOCKING CIRCUIT FOR SECURITY SYSTEMS G ENERAL DECRIPTION The TE A 5500 is an encoder/decoder circuit, for security systems. The system has the ability to transmit a complex code between an encoding and decoding unit by infrared radiation. The device can
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TEA5500
TEA5500T
cqy89a
t162a
A5500
CQY89
TEA5500T
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la1951
Abstract: zener diode E7 ir remote control circuit TEA5500 5500T INFRARED REMOTE CONTROL decoder
Text: P ro d u ct specification Philips S em ico n d u cto rs Integrated Circuits TEA5500 TEA5500T Coded locking circuit for security systems GENERAL DECRIPTION The TEA 5500 is an encoder/decoder circuit, for security systems. The system has the ability to transmit a complex code between an encoding and decoding unit by infrared radiation. The device can
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TEA5500
TEA5500T
BC558
BC327
TEA5551
TEA5591
la1951
zener diode E7
ir remote control circuit
5500T
INFRARED REMOTE CONTROL decoder
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