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    E2 MARKING SOT Search Results

    E2 MARKING SOT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    E2 MARKING SOT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    DIN 6784 c1

    Abstract: BCR108S BFS17S E6327 VPS05604
    Text: BFS17S NPN Silicon RF Transistor 4 • For broadband amplifiers up to 1 GHz at collector 5 6 currents from 1 mA to 20 mA 2 C1 E2 B2 6 5 4 3 1 VPS05604 TR2 TR1 1 2 3 B1 E1 C2 EHA07196 Type Marking BFS17S MCs Pin Configuration Package 1=B1 2=E1 3=C2 4=B2 5=E2 6=C1 SOT363


    Original     		PDF BFS17S VPS05604 EHA07196 OT363 DIN 6784 c1 BCR108S BFS17S E6327 VPS05604

    BFS17S

    Abstract: VPS05604 NPN marking MCs
    Text: BFS17S NPN Silicon RF Transistor 4  For broadband amplifiers up to 1 GHz at collector 5 6 currents from 1 mA to 20 mA 2 C1 E2 B2 6 5 4 3 1 VPS05604 TR2 TR1 1 2 3 B1 E1 C2 EHA07196 Type Marking BFS17S MCs Pin Configuration Package 1=B1 2=E1 3=C2 4=B2 5=E2 6=C1 SOT363


    Original     		PDF BFS17S VPS05604 EHA07196 OT363 Aug-20-2001 BFS17S VPS05604 NPN marking MCs

    Untitled

    Abstract: No abstract text available
    Text: BFS17S NPN Silicon RF Transistor 4  For broadband amplifiers up to 1 GHz at collector 5 6 currents from 1 mA to 20 mA 2 C1 E2 B2 6 5 4 3 1 VPS05604 TR2 TR1 1 2 3 B1 E1 C2 EHA07196 Type Marking BFS17S MCs Pin Configuration Package 1=B1 2=E1 3=C2 4=B2 5=E2 6=C1 SOT363


    Original     		PDF BFS17S VPS05604 EHA07196 OT363

    VPS05604

    Abstract: bfs 11
    Text: BFS 17S NPN Silicon RF Transistor 4  For broadband amplifiers up to 1 GHz at collector 5 6 currents from 1 mA to 20 mA 2 C1 E2 B2 6 5 4 3 1 VPS05604 TR2 TR1 1 2 3 B1 E1 C2 EHA07196 Type Marking BFS 17S MCs Pin Configuration Package 1=B1 2=E1 3=C2 4=B2 5=E2 6=C1 SOT-363


    Original     		PDF VPS05604 EHA07196 OT-363 Oct-25-1999 VPS05604 bfs 11

    ic7001

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors BC847S Multi-chip transistor NPN SOT-363 APPLICATION This device is designed for general purpose amplifier applications C1 B2 E2 Marking :1C E1 B1 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		PDF OT-363 BC847S OT-363 ic7001

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors BC847S Multi-chip transistor NPN SOT-363 APPLICATION This device is designed for general purpose amplifier applications C1 B2 E2 Marking :1C E1 B1 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		PDF OT-363 BC847S OT-363 100mA 100MHz

    marking s6 sot363

    Abstract: No abstract text available
    Text: CYStech Electronics Corp. SOT-363 Dimension Style: Pin 1. Emitter1 E1 Pin 2. Base1 (B1) Pin 3. Collector2 (C2) Pin 4. Emitter2 (E2) Pin 5. Base2 (B2) Pin 6. Collector1 (C1) Marking: 6-Lead SOT-363 Plastic Surface Mounted Package CYStek Package Code: S6 *:Typical


    Original     		PDF OT-363 026BSC 65BSC UL94V-0 marking s6 sot363

    183S

    Abstract: Q62702-C2377
    Text: BCR 183S PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit • Built in resistor R1 = 10kΩ, R2 = 10kΩ Type Marking Ordering Code Pin Configuration BCR 183S WMs Package Q62702-C2377 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT-363


    Original     		PDF Q62702-C2377 OT-363 Nov-27-1996 183S

    6c2 transistor

    Abstract: transistor marking MCs Q62702-F1645 transistor BFs 18 SOT 23 CODE MCS
    Text: BFS 17S NPN Silicon RF Transistor • For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA Tape loading orientation Type Marking Ordering Code Pin Configuration BFS 17S MCs 1/4=B1/B2 2/5=E1/E2 3/6=C2/C1 SOT-363 Q62702-F1645 Package Maximum Ratings of any single Transistor


    Original     		PDF OT-363 Q62702-F1645 Dec-18-1996 6c2 transistor transistor marking MCs Q62702-F1645 transistor BFs 18 SOT 23 CODE MCS

    BCV62

    Abstract: No abstract text available
    Text: BCV 62 PNP Silicon Double Transistor • To be used as a current mirror • Good thermal coupling and VBE matching • High current gain • Low collector-emitter saturation voltage C2 1 C1 (2) Tr.1 Tr.2 E1 (3) E2 (4) EHA00013 Type Marking Ordering Code


    Original     		PDF EHA00013 Q62702-C2158 Q62702-C2159 Q62702-C2160 OT-143 EHN00004 Feb-11-1998 EHP00939 EHP00941 BCV62

    VPS05178

    Abstract: BCV61
    Text: BCV 61 NPN Silicon Double Transistor 3 • To be used as a current mirror • Good thermal coupling and VBE matching • High current gain 4 • Low collector-emitter saturation voltage 2 C1 2 C2 (1) 1 Tr.1 VPS05178 Tr.2 E1 (3) E2 (4) EHA00012 Type Marking


    Original     		PDF VPS05178 EHA00012 OT-143 EHN00002 Sep-30-1999 EHP00940 EHP00942 VPS05178 BCV61

    VPS05178

    Abstract: No abstract text available
    Text: BCV 62 PNP Silicon Double Transistor 3 • To be used as a current mirror • Good thermal coupling and VBE matching • High current gain 4 • Low collector-emitter saturation voltage 2 C2 1 C1 (2) 1 Tr.1 VPS05178 Tr.2 E1 (3) E2 (4) EHA00013 Type Marking


    Original     		PDF VPS05178 EHA00013 OT-143 EHN00004 Oct-22-1999 EHP00939 EHP00941 VPS05178

    BCV61

    Abstract: BCV61B BCV61C BFP181 E6327 VPS05178 transistor marking ac transistor marking T2
    Text: BCV61 NPN Silicon Double Transistor 3 • To be used as a current mirror • Good thermal coupling and V BE matching • High current gain 4 • Low collector-emitter saturation voltage 2 C1 2 C2 (1) 1 Tr.1 VPS05178 Tr.2 E1 (3) E2 (4) EHA00012 Type Marking


    Original     		PDF BCV61 VPS05178 EHA00012 BCV61B OT143 BCV61C BCV61 BCV61B BCV61C BFP181 E6327 VPS05178 transistor marking ac transistor marking T2

    transistor marking T2

    Abstract: No abstract text available
    Text: BCV62 PNP Silicon Double Transistor 3  To be used as a current mirror  Good thermal coupling and VBE matching 4  High current gain  Low collector-emitter saturation voltage 2 C2 1 C1 (2) 1 Tr.1 VPS05178 Tr.2 E1 (3) E2 (4) EHA00013 Type Marking Pin Configuration


    Original     		PDF BCV62 VPS05178 EHA00013 BCV62A BCV62B BCV62C OT143 OT143 transistor marking T2

    BCV61

    Abstract: No abstract text available
    Text: BCV61 NPN Silicon Double Transistor 3  To be used as a current mirror  Good thermal coupling and VBE matching 4  High current gain  Low collector-emitter saturation voltage 2 C1 2 C2 (1) 1 Tr.1 VPS05178 Tr.2 E1 (3) E2 (4) EHA00012 Type Marking Pin Configuration


    Original     		PDF BCV61 VPS05178 EHA00012 BCV61A BCV61B BCV61C OT143 OT143 BCV61

    Untitled

    Abstract: No abstract text available
    Text: BCV62 PNP Silicon Double Transistor 3  To be used as a current mirror  Good thermal coupling and VBE matching 4  High current gain  Low collector-emitter saturation voltage 2 C2 1 C1 (2) 1 Tr.1 VPS05178 Tr.2 E1 (3) E2 (4) EHA00013 Type Marking Pin Configuration


    Original     		PDF BCV62 VPS05178 EHA00013 BCV62A BCV62B BCV62C OT143 OT143

    e2 marking

    Abstract: MARKING 120 sot143 BCV62 BCV62A BCV62B BCV62C BFP181 VPS05178 transistor marking E2 marking 3Ls
    Text: BCV62 PNP Silicon Double Transistor 3  To be used as a current mirror  Good thermal coupling and VBE matching 4  High current gain  Low collector-emitter saturation voltage 2 C2 1 C1 (2) 1 Tr.1 VPS05178 Tr.2 E1 (3) E2 (4) EHA00013 Type Marking Pin Configuration


    Original     		PDF BCV62 VPS05178 EHA00013 BCV62A OT143 BCV62B BCV62C e2 marking MARKING 120 sot143 BCV62 BCV62A BCV62B BCV62C BFP181 VPS05178 transistor marking E2 marking 3Ls

    marking 1ks

    Abstract: BCV61
    Text: BCV61 NPN Silicon Double Transistor 3  To be used as a current mirror  Good thermal coupling and VBE matching 4  High current gain  Low collector-emitter saturation voltage 2 C1 2 C2 (1) 1 Tr.1 VPS05178 Tr.2 E1 (3) E2 (4) EHA00012 Type Marking Pin Configuration


    Original     		PDF BCV61 VPS05178 EHA00012 BCV61A BCV61B BCV61C OT143 OT143 marking 1ks BCV61

    BCV62B

    Abstract: marking 3ks BCV62 BCV62A BCV62C VPS05178
    Text: BCV62 PNP Silicon Double Transistor 3  To be used as a current mirror  Good thermal coupling and VBE matching 4  High current gain  Low collector-emitter saturation voltage 2 C2 1 C1 (2) 1 Tr.1 VPS05178 Tr.2 E1 (3) E2 (4) EHA00013 Type Marking Pin Configuration


    Original     		PDF BCV62 VPS05178 EHA00013 BCV62A OT143 BCV62B BCV62C EHN00004 BCV62B marking 3ks BCV62 BCV62A BCV62C VPS05178

    marking JC

    Abstract: BAV23S marking sot23 marking JB sot23 jb SOT23 MARKING JC BAV23S JB SOT23 E2- marking marking JB sot23
    Text: SEMICONDUCTOR BAV23S MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking JC 1 No. 0 1 2. Marking 2 Item Marking Description Device Mark JC BAV23S - - - * Lot No. 01 2002. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method


    Original     		PDF BAV23S OT-23 marking JC BAV23S marking sot23 marking JB sot23 jb SOT23 MARKING JC BAV23S JB SOT23 E2- marking marking JB sot23

    sot23 marking y5

    Abstract: BZX84C18 FMMD914 FMMD6050 BZX84-C27 BAR99 MARKING W4 sot 23 C3V9 C5V1 c5v6
    Text: SOT-23 TRANSISTORS & DIODES PRODUCT LIST AND DEVICE IDENTIFICATION DIODES DIODES Device Type Device Type Device marking Device marking BAL99 E2 BZX84-C43 X6 BAR99 E3 BZX84-C47 X7 BAS16 A3 FMMD914 5D BAV70 A4 FMMD6050 5A BAV74 JA BAV99 A7 BAW56 A1 HD2A 5D HD3A


    OCR Scan     		PDF OT-23 BAL99 BZX84-C43 BAR99 BZX84-C47 BAS16 FMMD914 BAV70 FMMD6050 BAV74 sot23 marking y5 BZX84C18 FMMD914 FMMD6050 BZX84-C27 BAR99 MARKING W4 sot 23 C3V9 C5V1 c5v6

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BCR183S PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit ►Built in resistor Ri = 10kii, R2 = 10k£2 Type Marking Ordering Code Pin Configuration BCR 183S WMs Package Q62702-C2377 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT-363


    OCR Scan     		PDF BCR183S 10kii, Q62702-C2377 OT-363

    Siemens SRS 20

    Abstract: No abstract text available
    Text: SIEMENS SIPMOS Small-Signal Transistors BSS 101 BSS 131 VDS = 240 V /D = 0 .1 3 /0 .1 0 A ^DSIonl = 1 6 0 • N channel • Enhancement mode • Packages: TO-92, SOT-231 Type Marking Ordering code for version on bulk Ordering code for version in tap e2)


    OCR Scan     		PDF OT-231) Q62702-S484 Q62702-S554 Q62702-S493 Q62702-S565 SIK00104 Siemens SRS 20

    bss138

    Abstract: BSS98 siemens 350 98 Q62702-S566 Q62702-S558
    Text: S I E M E N S SIPMOS " Small-Signal Transistors BSS 98 BSS 138 VDS = 50 V lD = 0 .3 /0 .2 2 A ^DS on = 3-5 O • N channel • Enhancement mode • Packages: TO-92, SOT-231) Type Marking Ordering code for version on bulk Ordering code for version in tap e2)


    OCR Scan     		PDF OT-231) Q62702-S464 Q62702-S558 62702-S517 Q62702-S566 bss138 BSS98 siemens 350 98 Q62702-S566 Q62702-S558