Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    E2 MARKING SOT Search Results

    E2 MARKING SOT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MKZ6V2 Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.2 V, SOT-23 Visit Toshiba Electronic Devices & Storage Corporation
    MSZ6V8 Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, SOT-346 Visit Toshiba Electronic Devices & Storage Corporation
    MUZ20V Toshiba Electronic Devices & Storage Corporation Zener Diode, 20 V, SOT-323 Visit Toshiba Electronic Devices & Storage Corporation
    MKZ6V8 Toshiba Electronic Devices & Storage Corporation Zener Diode, 6.8 V, SOT-23 Visit Toshiba Electronic Devices & Storage Corporation
    MSZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, SOT-346 Visit Toshiba Electronic Devices & Storage Corporation

    E2 MARKING SOT Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    sot23 marking y5

    Abstract: BZX84C18 FMMD914 FMMD6050 BZX84-C27 BAR99 MARKING W4 sot 23 C3V9 C5V1 c5v6
    Text: SOT-23 TRANSISTORS & DIODES PRODUCT LIST AND DEVICE IDENTIFICATION DIODES DIODES Device Type Device Type Device marking Device marking BAL99 E2 BZX84-C43 X6 BAR99 E3 BZX84-C47 X7 BAS16 A3 FMMD914 5D BAV70 A4 FMMD6050 5A BAV74 JA BAV99 A7 BAW56 A1 HD2A 5D HD3A


    OCR Scan
    OT-23 BAL99 BZX84-C43 BAR99 BZX84-C47 BAS16 FMMD914 BAV70 FMMD6050 BAV74 sot23 marking y5 BZX84C18 FMMD914 FMMD6050 BZX84-C27 BAR99 MARKING W4 sot 23 C3V9 C5V1 c5v6 PDF

    DIN 6784 c1

    Abstract: BCR108S BFS17S E6327 VPS05604
    Text: BFS17S NPN Silicon RF Transistor 4 • For broadband amplifiers up to 1 GHz at collector 5 6 currents from 1 mA to 20 mA 2 C1 E2 B2 6 5 4 3 1 VPS05604 TR2 TR1 1 2 3 B1 E1 C2 EHA07196 Type Marking BFS17S MCs Pin Configuration Package 1=B1 2=E1 3=C2 4=B2 5=E2 6=C1 SOT363


    Original
    BFS17S VPS05604 EHA07196 OT363 DIN 6784 c1 BCR108S BFS17S E6327 VPS05604 PDF

    183S

    Abstract: Q62702-C2377
    Text: BCR 183S PNP Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit • Built in resistor R1 = 10kΩ, R2 = 10kΩ Type Marking Ordering Code Pin Configuration BCR 183S WMs Package Q62702-C2377 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT-363


    Original
    Q62702-C2377 OT-363 Nov-27-1996 183S PDF

    6c2 transistor

    Abstract: transistor marking MCs Q62702-F1645 transistor BFs 18 SOT 23 CODE MCS
    Text: BFS 17S NPN Silicon RF Transistor • For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA Tape loading orientation Type Marking Ordering Code Pin Configuration BFS 17S MCs 1/4=B1/B2 2/5=E1/E2 3/6=C2/C1 SOT-363 Q62702-F1645 Package Maximum Ratings of any single Transistor


    Original
    OT-363 Q62702-F1645 Dec-18-1996 6c2 transistor transistor marking MCs Q62702-F1645 transistor BFs 18 SOT 23 CODE MCS PDF

    sot-23 MARK KND

    Abstract: marking 5B KMB2D0N60SA marking H8 SOT-23 SOT23 MARKING 5B sot-23 MARK e5 marking 5b sot23
    Text: SEMICONDUCTOR KMB2D0N60SA MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 1 No. KND 0 6 2. Marking 2 Item Marking Description Device Mark KND KMB2D0N60SA - - - * Lot No. 06 2006. 06 Week [0:1st Character, 6:2nd Character] Note * Lot No. marking method


    Original
    KMB2D0N60SA OT-23 sot-23 MARK KND marking 5B KMB2D0N60SA marking H8 SOT-23 SOT23 MARKING 5B sot-23 MARK e5 marking 5b sot23 PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type Product specification BC847PN • Features SOT-363 ● Two internal isolated NPN/PNP Transistors in one package Unit: mm +0.1 -0.1 1.3 4 2 3 E2 +0.1 0.3-0.1 +0.1 2.1-0.1 +0.05 0.1-0.02 +0.05 0.95-0.05 B2 0.1max 1 C1 0.36 +0.15 2.3-0.15


    Original
    BC847PN OT-363 200Hz PDF

    AN1124

    Abstract: AVAGO MARKING E4
    Text: HSMP-381x, 481x Surface Mount RF PIN Low Distortion Attenuator Diodes Data Sheet Description/Applications Features The HSMP-381x series is specifically designed for low distortion attenuator applications. The HSMP-481x products feature ultra low parasitic inductance in the SOT-23 and


    Original
    HSMP-381x, HSMP-381x HSMP-481x OT-23 OT-323 AV01-0378EN AV02-0402EN AN1124 AVAGO MARKING E4 PDF

    K1p transistor

    Abstract: DUAL NPN K1P marking k1p MMDT2222A J-STD-020A MMDT2222A-7 MMDT2907A NPN K1P
    Text: MMDT2222A DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • · · Epitaxial Planar Die Construction Complementary PNP Type Available MMDT2907A Ultra-Small Surface Mount Package SOT-363 A C2 · · · · · · E1 B C Mechanical Data · · B1 E2 Case: SOT-363, Molded Plastic


    Original
    MMDT2222A MMDT2907A) OT-363 OT-363, J-STD-020A MIL-STD-202, DS30125 100mA 300mA K1p transistor DUAL NPN K1P marking k1p MMDT2222A J-STD-020A MMDT2222A-7 MMDT2907A NPN K1P PDF

    K2F transistor

    Abstract: pnp k2f K2F marking K2F 9 J-STD-020A MMDT2907A
    Text: MMDT2907A DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • · · Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching Ultra-Small Surface Mount Package SOT-363 A C2 · · · · · · E2 Case: SOT-363, Molded Plastic Case Material - UL Flammability Rating


    Original
    MMDT2907A OT-363 OT-363, J-STD-020A MIL-STD-202, DS30109 300mA 100mA K2F transistor pnp k2f K2F marking K2F 9 J-STD-020A MMDT2907A PDF

    BC857BV

    Abstract: BC847BV BC857BV-7 J-STD-020A
    Text: BC857BV PNP DUAL SMALL SIGNAL SURFACE MOUNT TRANSISTOR SPICE MODEL: BC857BV NEW PRODUCT Features • · · · Epitaxial Die Construction Complementary NPN Types Available BC847BV Ultra-Small Surface Mount Package Lead Free Plating A · · · · · · · SOT-563


    Original
    BC857BV BC847BV) OT-563 OT-563, J-STD-020A MIL-STD-202, DS30433 BC857BV BC847BV BC857BV-7 J-STD-020A PDF

    IMT4

    Abstract: J-STD-020A KX-7
    Text: IMT4 DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR NEW PRODUCT SPICE MODEL: IMT4 Features • · · · A Epitaxial Planar Die Construction Complementary NPN Type Available IMX8 Small Surface Mount Package Also Available in Lead Free Version SOT-26 B2 B1


    Original
    OT-26 OT-26, J-STD-020A MIL-STD-202, DS30303 IMT4 J-STD-020A KX-7 PDF

    k3n transistor

    Abstract: K3n td sot transistor k3n J-STD-020A MMDT3906 MMDT3906-7 MMDT3906-7-F
    Text: MMDT3906 DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR SPICE MODEL: MMDT3906 Features • · · · C2 · · · · · · · E2 E1 B2 C1 G H Case: SOT-363, Molded Plastic Case Material - UL Flammability Rating Classification 94V-0 Moisture sensitivity: Level 1 per J-STD-020A


    Original
    MMDT3906 OT-363, J-STD-020A MIL-STD-202, DS30124 k3n transistor K3n td sot transistor k3n J-STD-020A MMDT3906 MMDT3906-7 MMDT3906-7-F PDF

    k3n transistor

    Abstract: marking code k3n sot transistor k3n K3n td J-STD-020A MMDT3906 MMDT3906-7 marking K3N
    Text: MMDT3906 DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • · · C2 B1 Mechanical Data · · · · · · B2 C1 G H Case: SOT-363, Molded Plastic Case Material - UL Flammability Rating Classification 94V-0 Moisture sensitivity: Level 1 per J-STD-020A


    Original
    MMDT3906 OT-363, J-STD-020A MIL-STD-202, OT-363 DS30124 k3n transistor marking code k3n sot transistor k3n K3n td J-STD-020A MMDT3906 MMDT3906-7 marking K3N PDF

    marking J3 sot23

    Abstract: MARKING J3 SOT-23 marking J3 J3 SOT23 MARK J3 KDS2236S J3 SOT sot-23 Marking J3
    Text: SEMICONDUCTOR KDS2236S MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking J3 No. 1 Item Marking Device Mark J3 KDS2236S - - - * Lot No. 01 2 Description 1998. 1st Week [ 0: 1st Character, 1: 2nd Character] [Note] * Lot No. marking method


    Original
    KDS2236S OT-23 R1998. marking J3 sot23 MARKING J3 SOT-23 marking J3 J3 SOT23 MARK J3 KDS2236S J3 SOT sot-23 Marking J3 PDF

    MMBZ5250B

    Abstract: No abstract text available
    Text: SEMICONDUCTOR MMBZ5250B MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking 81A No. 1 Item Marking Device Mark 81A MMBZ5250B - - - * Lot No. 01 2 Description 1998. 1st Week [ 0: 1st Character, 1: 2nd Character] [Note] * Lot No. marking method


    Original
    MMBZ5250B OT-23 MMBZ5250B PDF

    KDR411S

    Abstract: MARKING U3
    Text: SEMICONDUCTOR KDR411S MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking U3 No. 1 Item Marking Device Mark U3 KDR411S - - - * Lot No. 01 2 Description 1998. 1st Week [ 0: 1st Character, 1: 2nd Character] [Note] * Lot No. marking method


    Original
    KDR411S OT-23 Rem1998. KDR411S MARKING U3 PDF

    MARKING 8F MMBZ5231B

    Abstract: 8F sot23 MARK 8F 8F 7 sot23 sot23 8f 8f transistors MMBZ5231B MARK 8F SOT-23 marking 8f sot23 marking 8f
    Text: SEMICONDUCTOR MMBZ5231B MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking 8F No. 1 Item Marking Device Mark 8F MMBZ5231B - - - * Lot No. 01 2 Description 1998. 1st Week [ 0: 1st Character, 1: 2nd Character] [Note] * Lot No. marking method


    Original
    MMBZ5231B OT-23 MARKING 8F MMBZ5231B 8F sot23 MARK 8F 8F 7 sot23 sot23 8f 8f transistors MMBZ5231B MARK 8F SOT-23 marking 8f sot23 marking 8f PDF

    MMBZ5246B

    Abstract: No abstract text available
    Text: SEMICONDUCTOR MMBZ5246B MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking 8W No. 1 Item Marking Device Mark 8W MMBZ5246B - - - * Lot No. 01 2 Description 1998. 1st Week [ 0: 1st Character, 1: 2nd Character] [Note] * Lot No. marking method


    Original
    MMBZ5246B OT-23 MMBZ5246B PDF

    MMBZ5222B

    Abstract: No abstract text available
    Text: SEMICONDUCTOR MMBZ5222B MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking 18B No. 1 Item Marking Device Mark 18B MMBZ5222B - - - * Lot No. 01 2 Description 1998. 1st Week [ 0: 1st Character, 1: 2nd Character] [Note] * Lot No. marking method


    Original
    MMBZ5222B OT-23 MMBZ5222B PDF

    KRC111S

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KRC111S MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking NM No. 1 Item Marking Device Mark NM KRC111S hFE Grade - - * Lot No. 01 2 Description 1998. 1st Week [ 0: 1st Character, 1: 2nd Character] [Note] * Lot No. marking method


    Original
    KRC111S OT-23 KRC111S PDF

    Z02W15V

    Abstract: No abstract text available
    Text: SEMICONDUCTOR Z02W15V MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking 15X No. 1 Item Marking Device Mark 15 Z02W15V Voltage Grade X X,Y,Z * Lot No. 01 2 Description 1998. 1st Week [ 0: 1st Character, 1: 2nd Character] [Note] * Lot No. marking method


    Original
    Z02W15V OT-23 Z02W15V PDF

    KTC3121

    Abstract: SOT23 marking VA marking VA ktc31 sot-23 marking VA MARKING VA SOT23 mark va VA MARKING
    Text: SEMICONDUCTOR KTC3121 MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking VA No. 1 Item Marking Device Mark VA KTC3121 hFE Grade - - * Lot No. 01 2 Description 1998. 1st Week [ 0: 1st Character, 1: 2nd Character] [Note] * Lot No. marking method


    Original
    KTC3121 OT-23 KTC3121 SOT23 marking VA marking VA ktc31 sot-23 marking VA MARKING VA SOT23 mark va VA MARKING PDF

    MARKING WY

    Abstract: KTC3876S sot23 WY WY transistor marking wy sot23
    Text: SEMICONDUCTOR KTC3876S MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking WY No. 1 Item Marking Device Mark W KTC3876S hFE Grade Y O,Y * Lot No. 01 2 Description 1998. 1st Week [ 0: 1st Character, 1: 2nd Character] [Note] * Lot No. marking method


    Original
    KTC3876S OT-23 MARKING WY KTC3876S sot23 WY WY transistor marking wy sot23 PDF

    marking 39

    Abstract: marking 9v
    Text: SEMICONDUCTOR Z02W3.9V MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking 39X No. 1 Item Marking Device Mark 39 Z02W3.9V Voltage Grade X X,Z * Lot No. 01 2 Description 1998. 1st Week [ 0: 1st Character, 1: 2nd Character] [Note] * Lot No. marking method


    Original
    Z02W3 OT-23 marking 39 marking 9v PDF