E2 SMD TRANSISTOR Search Results

E2 SMD TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
BLM15PX121BH1D	Murata Manufacturing Co Ltd	FB SMD 0402inch 120ohm POWRTRN
BLM15PX181SH1D	Murata Manufacturing Co Ltd	FB SMD 0402inch 180ohm POWRTRN
BLM21HE802SN1L	Murata Manufacturing Co Ltd	FB SMD 0805inch 8000ohm NONAUTO
BLM15PX330BH1D	Murata Manufacturing Co Ltd	FB SMD 0402inch 33ohm POWRTRN
BLM15PX600SH1D	Murata Manufacturing Co Ltd	FB SMD 0402inch 60ohm POWRTRN

E2 SMD TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
marking TRANSISTOR SMD nf c1 Abstract: No abstract text available Text: Transistors SMD Type NPN/PNP Complementary Silicon Transistor Array BC847PN • Features SOT-363 ● Two internal isolated NPN/PNP Transistors in one package Unit: mm +0.1 -0.1 1.3 4 2 3 E2 +0.1 0.3-0.1 +0.1 2.1-0.1 +0.05 0.1-0.02 +0.05 0.95-0.05 B2 0.1max	Original	BC847PN OT-363 200Hz marking TRANSISTOR SMD nf c1	PDF
Untitled Abstract: No abstract text available Text: Transistors IC SMD Type Product specification BC847PN • Features SOT-363 ● Two internal isolated NPN/PNP Transistors in one package Unit: mm +0.1 -0.1 1.3 4 2 3 E2 +0.1 0.3-0.1 +0.1 2.1-0.1 +0.05 0.1-0.02 +0.05 0.95-0.05 B2 0.1max 1 C1 0.36 +0.15 2.3-0.15	Original	BC847PN OT-363 200Hz	PDF
BUD620 Abstract: E2 p SMD Transistor ic 9114 FE2A INTERNATIONAL RECTIFIER 9125 smd transistor 015 G 2a1100 Text: BUD620 Silicon NPN High Voltage Switching Transistor Features D D D D D D D D D Simple-sWitch-Off Transistor SWOT HIGH SPEED technology Planar passivation 100 kHz switching rate Very low dynamic saturation Very low operating temperature Optimized RBSOA High reverse voltage	Original	BUD620 D-74025 18-Jul-97 BUD620 E2 p SMD Transistor ic 9114 FE2A INTERNATIONAL RECTIFIER 9125 smd transistor 015 G 2a1100	PDF
E2 SMD Transistor Abstract: SMD A8 Transistor smd transistor 8c smd transistor A8 SMD a7 Transistor hm1-65642-883 Text: m W H A R R HM-65642 I S S E M I C O N D U C T O R 8K x 8 Asynchronous CMOS Static RAM January 1992 Description Features Full CMOS Design Six Transistor Memory Cell Low Standby Supply C u rre n t. . 100\|oA Low Operating Supply C urrent.	OCR Scan	HM-65642 HM-65642 80C86 80C88 E2 SMD Transistor SMD A8 Transistor smd transistor 8c smd transistor A8 SMD a7 Transistor hm1-65642-883	PDF
Untitled Abstract: No abstract text available Text: Transistors SMD Type NPN general purpose double transistor BCV61 • Features ● High current gain Unit: mm ● Low collector-emitter saturation voltage 1 2 1 TR2 TR1 3 4 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector-base voltage	Original	BCV61 BCV61A BCV61C BCV61B	PDF
Untitled Abstract: No abstract text available Text: MOSFET SMD Type PNP general purpose double transistor BCV62 • Features Unit: mm ● High current gain ● Low collector-emitter saturation voltage 1 2 1 TR2 TR1 3 4 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector-base voltage	Original	BCV62 BCV62A BCV62C BCV62B BCV61 BCV61A BCV61B BCV61C	PDF
Untitled Abstract: No abstract text available Text: Transistors Diodes SMD Type Product specification BCV62 • Features Unit: mm ● High current gain ● Low collector-emitter saturation voltage 1 2 1 TR2 TR1 3 4 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector-base voltage VCBO	Original	BCV62 BCV62B BCV61 BCV61A BCV61B BCV61C	PDF
Untitled Abstract: No abstract text available Text: Transistors SMD Type Product specification BCV61 • Features ● High current gain Unit: mm ● Low collector-emitter saturation voltage 1 2 1 TR2 TR1 3 4 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector-base voltage VCBO 30	Original	BCV61 BCV61C BCV61B BCV61A	PDF
CDFP4-F16 Abstract: ISL73096RHVF "top mark" intersil 5962F0721801V9A ISL73096RH ISL73127RH ISL73128RH NPN PNP Transistor Arrays PNP Transistor Arrays Intersil s1 smd transistor Text: ISL73096RH, ISL73127RH, ISL73128RH Data Sheet March 23, 2009 Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays FN6475.2 Features • Electrically Screened to SMD # 5962-07218 The ISL73096RH, ISL73127RH and ISL73128RH are radiation hardened bipolar transistor arrays. The	Original	ISL73096RH, ISL73127RH, ISL73128RH FN6475 ISL73127RH ISL73128RH ISL73096RH ISL73127RH CDFP4-F16 ISL73096RHVF "top mark" intersil 5962F0721801V9A NPN PNP Transistor Arrays PNP Transistor Arrays Intersil s1 smd transistor	PDF
AN1294 Abstract: PD60015 PD60015S Text: PD60015 PD60015S RF POWER TRANSISTORS The LdmoST Plastic FAMILY TARGET DATA Designed for GSM / EDGE / IS-97 applications • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 15 W with 10 dB gain @ 2000 MHz DESCRIPTION The PD60015 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power	Original	PD60015 PD60015S IS-97 PD60015 PowerSO-10RF. AN1294 PD60015S	PDF
pd55035 Abstract: smd transistor code A4 Text: PD55035 PD55035S RF POWER TRANSISTORS The LdmoST Plastic FAMILY TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 35 W with 13 dB gain @ 500 MHz / 12.5 V • NEW RF PLASTIC PACKAGE	Original	PD55035 PD55035S PowerSO-10RF. smd transistor code A4	PDF
smd transistor code A4 Abstract: AN1294 PD60004 PD60004S Text: PD60004 PD60004S RF POWER TRANSISTORS The LdmoST Plastic FAMILY TARGET DATA Designed for GSM / EDGE / IS-97 applications • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 4 W with 11 dB gain @ 2000 MHz DESCRIPTION The PD60004 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power	Original	PD60004 PD60004S IS-97 PD60004 PowerSO-10RF. smd transistor code A4 AN1294 PD60004S	PDF
AN1294 Abstract: PD60030 PD60030S Text: PD60030 PD60030S RF POWER TRANSISTORS The LdmoST Plastic FAMILY TARGET DATA Designed for GSM / EDGE / IS-97 applications • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 30 W with 10 dB gain @ 2000 MHz DESCRIPTION The PD60030 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power	Original	PD60030 PD60030S IS-97 PD60030 PowerSO-10RF. AN1294 PD60030S	PDF
Transistors Diodes smd e2 Abstract: smd marking 1d BC846S KC846S 5B-23 Text: Transistors SMD Type NPN Silicon AF Transistors Array KC846S BC846S SOT-363 1.3 Unit: mm +0.1 -0.1 +0.15 2.3-0.15 Features +0.1 1.25-0.1 0.525 0.65 0.36 For AF input stage and driver applications +0.1 0.3-0.1 +0.1 2.1-0.1 +0.05 0.1-0.02 +0.05 0.95-0.05 Low collector-emitter saturation voltage.	Original	KC846S BC846S) OT-363 Transistors Diodes smd e2 smd marking 1d BC846S 5B-23	PDF

AN1294 Abstract: LET20015 LET90015 Text: LET20015 RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package TARGET DATA Designed for GSM / EDGE / IS-97 applications • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 15 W with 11 dB gain @ 2000 MHz • ESD PROTECTION	Original	LET20015 IS-97 PowerSO-10RF LET90015 LET20015 AN1294 LET90015	PDF
transistor kA2 smd Abstract: AEP01481 Text: SIEMENS 5-V Low-Drop Voltage Regulator TLE 4267 Version 2.0 Bipolar IC Features • • • • • • • • • • • • • • Output voltage tolerance < ± 2 % Low-drop voltage Very low standby current consumption Input voltage up to 40 V Overvoltage protection up to 60 V < 400 ms	OCR Scan	Q67000-A9153 P-T0220-7-3 67006-A P-T0220-7-180 Q67000-A9246 P-T0220-7-230 GPT05887 transistor kA2 smd AEP01481	PDF
Untitled Abstract: No abstract text available Text: PD55025 PD55025S RF POWER TRANSISTORS The LdmoST Plastic FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 25 W with 14.5 dB gain @ 500 MHz / 12.5 V • NEW RF PLASTIC PACKAGE	Original	PD55025 PD55025S PowerSO-10RF PD55025	PDF
4267 G Abstract: E2 SMD Transistor Text: 5-V Low-Drop Voltage Regulator TLE 4267 Version 2.0 Bipolar IC Features ● ● ● ● ● ● ● ● ● ● ● ● ● ● Output voltage tolerance ≤ ± 2 % Low-drop voltage Very low standby current consumption Input voltage up to 40 V Overvoltage protection up to 60 V ≤ 400 ms	Original	Q67000-A9153 Q67006-A9169 Q67000-A9246 P-TO220-7-3 P-TO220-7-180 P-TO220-7-230 P-DSO-14-8 P-TO220-7-3 O-220 E3180) 4267 G E2 SMD Transistor	PDF
BUD620 Abstract: E2 p SMD Transistor Text: Temic BUD620 S e m i c o n d u c t o r s Silicon NPN High Voltage Switching Transistor Features • Simple-sWitch-Off Transistor SWOT Very low dynamic saturation HIGH SPEED technology Very low operating temperature Planar passivation Optimized RBSOA 100 kHz switching rate	OCR Scan	BUD620 BUD620 D-74025 18-Jul-97 E2 p SMD Transistor	PDF
P1M marking code sot 223 Abstract: marking codes transistors sot-223 sot-89 marking code 5A SMD CODE SOT89 lc MARKING 5A SOT-89 sot-23 marking LC smd marking rc SOT23 SOT89 MARKING CODE 5A SMD transistors marking code 2.F AS3 SOT223 Text: 11 SMD Darlington Transistors SMD® Darlington Transistors Description Mechanical Data Philips Components Darlington transistors provide high input impedance and thus high gain by virtue of two seriesintegrated transistors on a single chip. High current versions	OCR Scan	PXTA14 PXTA64 PZTA13 PZTA14 PZTA63 PZTA64 OT-23 OT-89 OT-223 P1M marking code sot 223 marking codes transistors sot-223 sot-89 marking code 5A SMD CODE SOT89 lc MARKING 5A SOT-89 sot-23 marking LC smd marking rc SOT23 SOT89 MARKING CODE 5A SMD transistors marking code 2.F AS3 SOT223	PDF
Untitled Abstract: No abstract text available Text: Programmable Single-/Dual-/Triple- Tone Gong SAE 800 Pb-free lead plating; RoHS compliant Bipolar IC Features ● ● ● ● ● ● ● ● ● Supply voltage range 2.8 V to 18 V Few external components no electrolytic capacitor 1 tone, 2 tones, 3 tones programmable	Original	Q67000-A8339 Q67000-A8340 GPD05583 GPS05121	PDF
ic 4800 8 pin Abstract: PV smd transistor Transistors Diodes smd e2 E2 p SMD Transistor gong SMD code E2 GPD05583 GPS05121 Q67000-A8339 Q67000-A8340 Text: Programmable Single-/Dual-/Triple- Tone Gong SAE 800 Preliminary Data Bipolar IC Features ● ● ● ● ● ● ● ● ● Supply voltage range 2.8 V to 18 V Few external components no electrolytic capacitor 1 tone, 2 tones, 3 tones programmable Loudness control	Original	Q67000-A8339 Q67000-A8340 GPD05583 GPS05121 ic 4800 8 pin PV smd transistor Transistors Diodes smd e2 E2 p SMD Transistor gong SMD code E2 GPD05583 GPS05121 Q67000-A8339 Q67000-A8340	PDF
PV smd transistor Abstract: e2 smd transistor SAE 800 Q67000-A8340 SAE 600 GPD05583 GPS05121 Q67000-A8339 smd e2 SAE800 Text: Programmable Single-/Dual-/Triple- Tone Gong SAE 800 Preliminary Data Bipolar IC Features ● ● ● ● ● ● ● ● ● Supply voltage range 2.8 V to 18 V Few external components no electrolytic capacitor 1 tone, 2 tones, 3 tones programmable Loudness control	Original	Q67000-A8339 Q67000-A8340 GPD05583 GPS05121 PV smd transistor e2 smd transistor SAE 800 Q67000-A8340 SAE 600 GPD05583 GPS05121 Q67000-A8339 smd e2 SAE800	PDF
PV smd transistor Abstract: smd transistor A13 SAE 600 e2 smd transistor Q67000-A8340 SAE800 Q67000-A8339 chime generator e2 ic SAE 800 Text: Programmable Single-/Dual-/Triple- Tone Gong SAE 800 Pb-free lead plating; RoHS compliant Bipolar IC Features ● ● ● ● ● ● ● ● ● Supply voltage range 2.8 V to 18 V Few external components no electrolytic capacitor 1 tone, 2 tones, 3 tones programmable	Original	Q67000-A8339 Q67000-A8340 GPD05583 GPS05121 PV smd transistor smd transistor A13 SAE 600 e2 smd transistor Q67000-A8340 SAE800 Q67000-A8339 chime generator e2 ic SAE 800	PDF

E2 SMD TRANSISTOR Search Results

E2 SMD TRANSISTOR Result Highlights (5)

E2 SMD TRANSISTOR Datasheets Context Search

marking TRANSISTOR SMD nf c1

Untitled

BUD620

E2 SMD Transistor

Untitled

Untitled

Untitled

Untitled

CDFP4-F16

AN1294

pd55035

smd transistor code A4

AN1294

Transistors Diodes smd e2

AN1294

transistor kA2 smd

Untitled

4267 G

BUD620

P1M marking code sot 223

Untitled

ic 4800 8 pin

PV smd transistor

PV smd transistor