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    E2P TRANSISTOR Search Results

    E2P TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    E2P TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: 8381917 SO NY S ONY COM PONENT 90D PRODUCTS CORP/COMPONENT PRODS TO 00501 &3&E3&3 De I 0QD0SD1 /3 -a 7 2048-Bit 128 Word x 16 Bit Non-Volatile Memory Description Package Outline The C X K 1 0 0 9 P is an electrically erasable and pro­ grammable E2P R O M of 128 word X 16 bit structure,


    OCR Scan     		2048-Bit PDF

    29736

    Abstract: TC58V16BDC TC5816BDC SmartMedia Logical Format ID device code toshiba NAND ID code
    Text: TO S H IB A TC58V16BDC TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT 16 M b it 2 M SILICON GATE CMOS x 8 bit C M O S N A N D E2P R O M (2 M BYTE S m a r t M e d ia ) DESCRIPTION The TC58V16BDC device is a single 3.3 volt 16 M (17,301,504) bit NAND Electrically Erasable and


    OCR Scan     		TC58V16BDC TC58V16BDC 32MByte FDC-22A 29736 TC5816BDC SmartMedia Logical Format ID device code toshiba NAND ID code PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TENTATIVE TC58V16BDC T O S H I B A M O S D IG IT A L IN T E G R A T E D C IR C U IT SILICO N G A T E C M O S 16 M B I T 2 M X 8 BITS C M O S N A N D FLASH E2P R O M D ESC RIP TIO N The TC58V16 device is a single 3.3-volt 16 Mbit NAND Electrically Erasable and Programmable


    OCR Scan     		TC58V16BDC TC58V16 264-oyte, 264-byte PDF

    BFG540 N43

    Abstract: w1p 22 SOT23 W1P sot143 Marking code V12 "W1P" f763 SOT89 MARKING CODE marking code V3 SOT89 N5 MARKING CODE V3 marking code
    Text: DISCRETE SEMICONDUCTORS DATA SHEET Marking codes RF Wideband Transistors 1997 Nov 22 File under Discrete Semiconductors, SC14 Philips Semiconductors RF Wideband Transistors Marking codes TYPE NUMBER TO PACKAGE AND MARKING CODE TYPE NUMBER PACKAGE MARKING CODE


    Original     		BF547 BF547W BF689K BF747 OT323 OT353 OT143 BFG540 N43 w1p 22 SOT23 W1P sot143 Marking code V12 "W1P" f763 SOT89 MARKING CODE marking code V3 SOT89 N5 MARKING CODE V3 marking code PDF

    SOT23 W1P

    Abstract: BFG540 N43 SOT89 MARKING CODE "W1P" MARKING W1P sot143 Marking code p1 PSH10 sot143 sot343 marking code V3 w1p code
    Text: Philips Semiconductors RF Wideband Transistors Marking codes TYPE NUMBER TO PACKAGE AND MARKING CODE TYPE NUMBER PACKAGE BF547 SOT23 BF547W BF689K SOT323 SOT54 BF747 SOT23 SOT54 BF763 BFC505 BFC520 BFE505 BFE520 BFG10 BFG10/X BFG10W/X BFG11 BFG11/X BFG11W/X


    OCR Scan     		BF547 BF547W BF689K BF747 BF763 BFC505 BFC520 BFE505 BFE520 BFG10 SOT23 W1P BFG540 N43 SOT89 MARKING CODE "W1P" MARKING W1P sot143 Marking code p1 PSH10 sot143 sot343 marking code V3 w1p code PDF

    SOT23 W1P

    Abstract: MARKING W1P transistor w1P MARKING W2 SOT23 marking code R2 sot23 marking code w2 sot23 marking code W1p marking code P2p SOT23 marking W1 sot23 marking code w2 sot323
    Text: DISCRETE SEMICONDUCTORS Marking codes RF Wideband Transistors Supersedes data of 1997 Nov 21 1999 Jul 21 Philips Semiconductors RF Wideband Transistors Marking codes TYPE NUMBER TO PACKAGE AND MARKING CODE TYPE NUMBER PACKAGE BF547 BF547W BF747 BFC505 SOT23


    Original     		BF547 BF547W BF747 BFC505 OT323 OT353 OT143 SOT23 W1P MARKING W1P transistor w1P MARKING W2 SOT23 marking code R2 sot23 marking code w2 sot23 marking code W1p marking code P2p SOT23 marking W1 sot23 marking code w2 sot323 PDF

    E2p 28 transistor

    Abstract: E2p transistor transistor applications
    Text: Short-form product specification Philips Semiconductors NPN 3 GHz wideband transistor BFS17A PINNING APPLICATIONS • It is intended for a wide range of RF applications such as TV-tuners. PIN DESCRIPTION DESCRIPTION 1 base 2 emitter 3 collector NPN transistor in a plastic SOT23


    OCR Scan     		BFS17A E2p 28 transistor E2p transistor transistor applications PDF

    w1p npn

    Abstract: SOT23 W1P SOT-23 marking r1p SMD MARKING CODE v3p SMD sot23 marking E6 w1p 60 "W1P" w1p 73 MARKING W1P SMD W1P
    Text: 11 W id eb an d SMD Transistors Wideband SMD® Transistors Description Mechanical Data Philips Components wideband transistors are the result of leading-edge technology dedicated to expanding perfor­ mance and selection in the wideband arena. The devices are


    OCR Scan     		OT-223 priFS17 BFS17A BFT25 BFT92 BFT93 OT-23 OT-89 OT-143 OT-223 w1p npn SOT23 W1P SOT-23 marking r1p SMD MARKING CODE v3p SMD sot23 marking E6 w1p 60 "W1P" w1p 73 MARKING W1P SMD W1P PDF

    E2p device marking

    Abstract: BFS17 BFS17A
    Text: Philips Semiconductors Product specification NPN 3 GHz wideband transistor BFS17A DESCRIPTION NPN transistor in a plastic S O T23 package. APPLICATIONS • It is intended fo r RF applications such as oscillators in TV tuners. PINNING Top view PIN DESCRIPTION


    OCR Scan     		BFS17 E2p device marking BFS17A PDF

    BFS17A

    Abstract: MSB003 E2p transistor E2p device marking Transistor E2P
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFS17A NPN 3 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 3 GHz wideband transistor BFS17A DESCRIPTION NPN transistor in a plastic SOT23 package.


    Original     		BFS17A MSB003 BFS17A MSB003 E2p transistor E2p device marking Transistor E2P PDF

    BFS17A

    Abstract: MSB003
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFS17A NPN 3 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September1995 Philips Semiconductors Product specification NPN 3 GHz wideband transistor BFS17A DESCRIPTION NPN transistor in a plastic SOT23 package.


    Original     		BFS17A September1995 MSB003 BFS17A MSB003 PDF

    E2p 28 transistor

    Abstract: 55C40 BFS17 BFS17A E2p device marking E2p transistor
    Text: Philips Semiconductors Product specification NPN 3 GHz wideband transistor BFS17A DESCRIPTION NPN transistor in a plastic S O T23 package. APPLICATIONS • It is intended fo r RF applications such as oscillators in TV tuners. PINNING T op view PIN DESCRIPTION


    OCR Scan     		BFS17 E2p 28 transistor 55C40 BFS17A E2p device marking E2p transistor PDF

    E2p 28 transistor

    Abstract: transistor DATA REFERENCE handbook RF TRANSISTOR 2.5 GHZ s parameter E2p device marking marking code 10 sot23 marking code ce SOT23 RF NPN POWER TRANSISTOR 2.5 GHZ BFS17A MSB003
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFS17A NPN 3 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 3 GHz wideband transistor BFS17A DESCRIPTION NPN transistor in a plastic SOT23 package.


    Original     		BFS17A MSB003 E2p 28 transistor transistor DATA REFERENCE handbook RF TRANSISTOR 2.5 GHZ s parameter E2p device marking marking code 10 sot23 marking code ce SOT23 RF NPN POWER TRANSISTOR 2.5 GHZ BFS17A MSB003 PDF

    E2p 93 transistor

    Abstract: E2p 28 transistor 1 307 329 082 E2p 49 transistor BFS17 BFS17A
    Text: Philips Sem iconductors m ^ 5 3 ^ 3 1 □DE5£5c1 TTS BIAPX N AMER PHILIPS/DISCRETE NPN 3 GHz wideband transistor DESCRIPTION fc,7E Product specification J> ^ BFS17A PINNING NPN transistor in a plastic SOT23 envelope. PIN It is intended for a wide range of RF


    OCR Scan     		BFS17A E2p 93 transistor E2p 28 transistor 1 307 329 082 E2p 49 transistor BFS17 BFS17A PDF

    cq 636 g transistor

    Abstract: No abstract text available
    Text: bbsa'oi Philips Semiconductors goeses^ n s • APX N AMER PHILIPS/D ISCR ETE NPN 3 GHz wideband transistor b?E Product specification D ^ BFS17A PINNING DESCRIPTION NPN transistor in a plastic SOT23 envelope. PIN It is intended for a wide range of RF applications such as TV tuners.


    OCR Scan     		BFS17A cq 636 g transistor PDF

    E2p 96 transistor

    Abstract: BFS17 BFS17A MSB003
    Text: Philips Sem iconductors iH 7 1 1 Q f l2 b 0 O b '"! 2 2 5 L7b I B PH I N Product specification NPN 3 GHz wideband transistor £ BFS17A TYP. MAX. PINNING DESCRIPTION NPN transistor in a plastic SOT23 envelope. PIN It is intended for a wide range of RF applications such as TV tuners.


    OCR Scan     		711Dflgb BFS17A MSB003 E2p 96 transistor BFS17 PDF

    BFS17A

    Abstract: MSB003 E2p transistor
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFS17A NPN 3 GHz wideband transistor Product specification September1995 NXP Semiconductors Product specification NPN 3 GHz wideband transistor BFS17A DESCRIPTION NPN transistor in a plastic SOT23 package. 3 handbook, halfpage


    Original     		BFS17A September1995 MSB003 R77/02/pp9 BFS17A MSB003 E2p transistor PDF

    LBC7

    Abstract: BiCD 0.13 BCD8 0.18um LDMOS BCD8* riccardi cd013 BCD8 st 7to30V LBC7 RONA free transistor e2p
    Text: Ultra-low On-Resistance LDMOS Implementation in 0.13 m CD and BiCD Process Technologies for Analog Power IC's Koji Shirai, Koji Yonemura, Kiminori Watanabe, Koji Kimura System LSI Division, Toshiba Semiconductor Company, 2-5-1 Kasama, Sakae, Yokohama, Kanagawa/Japan,


    Original     		7to30V LBC7 BiCD 0.13 BCD8 0.18um LDMOS BCD8* riccardi cd013 BCD8 st LBC7 RONA free transistor e2p PDF

    ICE2pcs02

    Abstract: ICE2PCS02g ICE2PCS01 BPW50 ICE2PCS01G
    Text: Version 2.3, 9 Oct 2007 CCM-PFC ICE2PCS02 ICE2PCS02G S tandalone Po wer F ac t or Correct ion PF C Co nt r olle r in Conti nuous Co n du c t ion M od e (C C M ) w it h I np u t Br o wn- O u t Protection Power Management & Supply N e v e r s t o p t h i n k i n g .


    Original     		ICE2PCS02 ICE2PCS02G ICE2pcs02 ICE2PCS02g ICE2PCS01 BPW50 ICE2PCS01G PDF

    ice2pcs02

    Abstract: ICE2PCS02G
    Text: Version 2.2, 6 Feb 2007 CCM-PFC ICE2PCS02 ICE2PCS02G S tandalone Po wer F ac t or Correct ion PF C Co nt r olle r in Conti nuous Co n du c t ion M od e (C C M ) w it h I np u t Br o wn- O u t Protection Power Management & Supply N e v e r s t o p t h i n k i n g .


    Original     		ICE2PCS02 ICE2PCS02G ICE2PCS02G PDF

    TONE ctcss s7116A

    Abstract: S7119BF S87050EF-VR s2914 s2914a S7116A S7235A2 S8850 temperature sensor with 8051 7 segment display S-8850
    Text: SII ELECTRONIC COMPONENTS Seiko Instruments CMOS 1C • ■ ! S I ’94 Seiko Instruments Inc. The technology of the ICs used in every field from office automation equipment to video and audio equipment is becoming increas­ ingly advanced. The required specifications


    OCR Scan     		32-bitX2 14MHz[ 32-bit D-63263 TONE ctcss s7116A S7119BF S87050EF-VR s2914 s2914a S7116A S7235A2 S8850 temperature sensor with 8051 7 segment display S-8850 PDF

    DP142

    Abstract: p139d E2p 49 transistor Transistor z3p tbh 12-38 transistor BJ 102 131 E2p 98 transistor ND1220 pj 75 sx 34
    Text: € E I " C l l b O P S X F a m ily D a ta S h e e t D escription Features • SR A M -based , In -system Program m able • Sw itch M atrix - N on-Blocking - Program m able Bus W idths of 4 ,8 ,1 6 and 32 bits - Id entical and Predictable D elays - O ne-to-O ne, O n e-to-M an y and M any-toO n e C onnections


    OCR Scan     		2328-C DP142 p139d E2p 49 transistor Transistor z3p tbh 12-38 transistor BJ 102 131 E2p 98 transistor ND1220 pj 75 sx 34 PDF

    Untitled

    Abstract: No abstract text available
    Text: TO SH IB A TMP47E186/187 CMOS 4-Bit Microcontroller TMP47E186M TMP47E187M TMP47E186M/187M is a high-speed, advanced single-chip 4-bit microcomputer with built-in ROM, RAM, E2PROM, SPI, I/O ports, a timer / counter. Model TMP47E186M TMP47E187M ROM 1024 x 8-bit


    OCR Scan     		TMP47E186/187 TMP47E186M TMP47E187M TMP47E186M/187M TMP47E187M 16x8-bit P-SOP16-300-1 TMP47P186M TMP47P187M PDF

    PCb board zd lty 2

    Abstract: AM29F200TB AM29F1001 micron sram sram book relay book regulator handbook free transistor equivalent book 2sc PM9006 AM29F0169
    Text: Flash Memory Products 1994/1995 Data Book/Handbook Advanced Micro Devices FUTURE ELECTRONICS INC. 5935 Airport Road, Suite 200 Mississauga, Ontario L4V1W5 TEL.: 416 612-9200 FAX: (416) 612-9185 T O L L F R E E 1 -8 0 0 -2 6 8 -7 9 4 8 Flash M e m o ry P ro d u cts


    OCR Scan     		32-Pin 48-Pin SR048 PCb board zd lty 2 AM29F200TB AM29F1001 micron sram sram book relay book regulator handbook free transistor equivalent book 2sc PM9006 AM29F0169 PDF