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    E2V MRAM Search Results

    E2V MRAM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    M3016-EVK Renesas Electronics Corporation MRAM Evaluation Kit Visit Renesas Electronics Corporation
    M3008316045NX0IBCR Renesas Electronics Corporation Non-Volatile 8Mb MRAM, Parallel Interface, 35ns and 45ns Visit Renesas Electronics Corporation
    M3032316035NX0IBCR Renesas Electronics Corporation Non-Volatile 32Mb MRAM, Parallel Interface, 35ns and 45ns Visit Renesas Electronics Corporation
    M3004316035NX0PTBY Renesas Electronics Corporation Non-Volatile 4Mb MRAM, Parallel Interface, 35ns and 45ns Visit Renesas Electronics Corporation
    M3032316045NX0PBCY Renesas Electronics Corporation Non-Volatile 32Mb MRAM, Parallel Interface, 35ns and 45ns Visit Renesas Electronics Corporation

    E2V MRAM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: EV2A08A 512K x 8-bit 3.3V Asynchronous Magnetoresistive RAM Datasheet Features • Single 3.3V Power Supply • Industrial Temperature Range –40°C to 110°C and • • • • • • Military Temperature Range (–55°C to 125°C) Symmetrical High-speed Read and Write with Fast Access Time (35 ns)


    Original     		PDF EV2A08A EV2A08A 304-bit 1024Câ

    EV2A16A

    Abstract: EV2A16 0918AX 0918B
    Text: EV2A16A 256K x 16-bit 3.3V Asynchronous Magnetoresistive RAM Datasheet Features • Single 3.3V Power Supply • Industrial Temperature Range –40°C to 110°C and • • • • • • • Military Temperature Range (–55°C to 125°C) Symmetrical High-speed Read and Write with Fast Access Time (35 ns)


    Original     		PDF EV2A16A 16-bit EV2A16A 304-bit 0918B EV2A16 0918AX

    Untitled

    Abstract: No abstract text available
    Text: EV2A08A 512K x 8-bit 3.3V Asynchronous Magnetoresistive RAM Datasheet Features • Single 3.3V Power Supply • Industrial Temperature Range –40°C to 110°C and • • • • • • Military Temperature Range (–55°C to 125°C) Symmetrical High-speed Read and Write with Fast Access Time (35 ns)


    Original     		PDF EV2A08A EV2A08A 304-bit 1024B

    EV2A16

    Abstract: No abstract text available
    Text: EV2A16A 256K x 16-bit 3.3V Asynchronous Magnetoresistive RAM Datasheet Features • Single 3.3V Power Supply • Industrial Temperature Range –40°C to 110°C and Military Temperature Range (–55°C to 125°C) Symmetrical High-speed Read and Write with Fast Access Time (35 ns)


    Original     		PDF EV2A16A 16-bit EV2A16A 304-bit 0918Eâ EV2A16

    EV2A08A

    Abstract: EV2A08AM
    Text: EV2A08A 512K x 8-bit 3.3V Asynchronous Magnetoresistive RAM Datasheet Features • Single 3.3V Power Supply • Industrial Temperature Range –40°C to 110°C and • • • • • • Military Temperature Range (–55°C to 125°C) Symmetrical High-speed Read and Write with Fast Access Time (35 ns)


    Original     		PDF EV2A08A EV2A08A 304-bit EV2A08AM

    Untitled

    Abstract: No abstract text available
    Text: EV4A16B 1M x 16-bit 3.3V Asynchronous Magnetoresistive RAM Datasheet - Preliminary Specification Features • Single 3.3V Power Supply • Industrial Temperature Range –40°C to 110°C and • • • • • • Military Temperature Range (–55°C to 125°C)


    Original     		PDF EV4A16B 16-bit EV4A16B 216-bit wor08 1038Câ

    ev2a16a

    Abstract: E2V MRAM
    Text: EV2A16A 256K x 16-bit 3.3V Asynchronous Magnetoresistive RAM Datasheet - Preliminary Specification Features • Single 3.3V Power Supply • Industrial Temperature Range -40°C to 110°C and • • • • • • • Military Temperature Range (-55°C to 125°C)


    Original     		PDF EV2A16A 16-bit EV2A16A 304-bit E2V MRAM