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    E3 SOT363 Search Results

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    secos gmbh

    Abstract: SMBJ11CA SM4005A SMBJ130CA SMBJ14CA SMBJ16CA SMBJ160CA BZV55C6V2 BZV55C12 SMBJ13CA
    Text: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier Small Signal Bridge B1 - B2 General Rectifier C1 - C4 Fast Rectifier D1 - D3 》Super Fast Low Loss Super Fast E1 - E3 High Efficiency G1 - G3 Schottky H1 - H3 Switching I1- I3


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    SC-59 SGSR809-A SGSR809-B SGSR809-C SGSR809-D SGSR809-E secos gmbh SMBJ11CA SM4005A SMBJ130CA SMBJ14CA SMBJ16CA SMBJ160CA BZV55C6V2 BZV55C12 SMBJ13CA PDF

    secos gmbh

    Abstract: c945 p 331 transistor npn SM2150AM SM1150AM c945 p 331 transistor SMBJ11CA 2sd2142 SM4005A SSG8 pzt649
    Text: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier C1 - C5 Fast Rectifier D1 - D3 Low Loss Super Fast Bridge E1 - E3 F1 High Efficiency G1 - G4 Schottky H1 - H3 Switching I1- I3 PiN Diode J1 Bridge Rectifier 》 Fast Bridge Rectifiers


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    SGSR809-A SC-59 SGSR809-B SGSR809-C SGSR809-D SGSR809-E secos gmbh c945 p 331 transistor npn SM2150AM SM1150AM c945 p 331 transistor SMBJ11CA 2sd2142 SM4005A SSG8 pzt649 PDF

    Untitled

    Abstract: No abstract text available
    Text: GMF05LC Vishay Semiconductors ESD Protection Diode Array 6 5 4 1 2 3 VY Features CW • Transient protection for data lines as per IEC 61000 - 4 - 2 ESD 15 kV (air), 8 kV e3 (contact), IEC 61000 - 4 - 5 (Lightning) 5 A (tp = 8/20 s) • Small package for use in portable electronics


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    GMF05LC 2002/95/EC 2002/96/EC D-74025 29-Apr-05 PDF

    GMF05C

    Abstract: GMF05C-GS08
    Text: GMF05C Vishay Semiconductors ESD Protection Diode Array Features 6 5 4 1 2 3 VY • Transient protection for data lines as per IEC 61000 - 4 - 2 ESD 15 kV (air), 8 kV e3 (contact), IEC 61000 - 4 - 5 (Lightning) 12 A (tp = 8/20 µs) • Small package for use in portable electronics


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    GMF05C D-74025 02-Mar-05 GMF05C GMF05C-GS08 PDF

    GMF05C

    Abstract: GMF05C-GS08
    Text: GMF05C Vishay Semiconductors ESD Protection Diode Array Features 6 5 4 1 2 3 VY • Transient protection for data lines as per IEC 61000 - 4 - 2 ESD 15 kV (air), 8 kV e3 (contact), IEC 61000 - 4 - 5 (Lightning) 12 A (tp = 8/20 s) • Small package for use in portable electronics


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    GMF05C 2002/95/EC 2002/96/EC D-74025 29-Apr-05 GMF05C GMF05C-GS08 PDF

    GMF05LC

    Abstract: GMF05LC-GS08
    Text: GMF05LC Vishay Semiconductors ESD Protection Diode Array 6 5 4 1 2 3 VY Features CW • Transient protection for data lines as per IEC 61000 - 4 - 2 ESD 15 kV (air), 8 kV e3 (contact), IEC 61000 - 4 - 5 (Lightning) 5 A (tp = 8/20 s) • Small package for use in portable electronics


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    GMF05LC 2002/95/EC 2002/96/EC 08-Apr-05 GMF05LC GMF05LC-GS08 PDF

    Untitled

    Abstract: No abstract text available
    Text: GMF05LC Vishay Semiconductors ESD Protection Diode Array 6 5 4 1 2 3 VY Features • Transient protection for data lines as per IEC 61000 - 4 - 2 ESD 15 kV (air), 8 kV e3 (contact), IEC 61000 - 4 - 5 (Lightning) 5 A (tp = 8/20 µs) • Small package for use in portable electronics


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    GMF05LC OT-363 D-74025 02-Mar-05 PDF

    GMF05C

    Abstract: GMF05C-GS08
    Text: GMF05C Vishay Semiconductors ESD Protection Diode Array Features 6 5 4 1 2 3 VY • Transient protection for data lines as per IEC 61000 - 4 - 2 ESD 15 kV (air), 8 kV e3 (contact), IEC 61000 - 4 - 5 (Lightning) 12 A (tp = 8/20 s) • Small package for use in portable electronics


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    GMF05C 2002/95/EC 2002/96/EC 08-Apr-05 GMF05C GMF05C-GS08 PDF

    Untitled

    Abstract: No abstract text available
    Text: GMF05MC Vishay Semiconductors Low Capacitance ESD Protection Diode Array 6 5 4 1 2 3 VY Features CW • Transient protection for data lines as per IEC 61000 - 4 - 2 ESD 15 kV (air), 8 kV e3 (contact), IEC 61000 - 4 - 5 (Lightning) 7 A (tp = 8/20 s) • Small package for use in portable electronics


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    GMF05MC 2002/95/EC 2002/96/EC D-74025 29-Apr-05 PDF

    GMF05MC

    Abstract: GMF05MC-GS08
    Text: GMF05MC Vishay Semiconductors Low Capacitance ESD Protection Diode Array 6 5 4 1 2 3 VY Features CW • Transient protection for data lines as per IEC 61000 - 4 - 2 ESD 15 kV (air), 8 kV e3 (contact), IEC 61000 - 4 - 5 (Lightning) 7 A (tp = 8/20 µs) • Small package for use in portable electronics


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    GMF05MC D-74025 02-Mar-05 GMF05MC GMF05MC-GS08 PDF

    Untitled

    Abstract: No abstract text available
    Text: MMBD4148TW / BAS16TW SURFACE MOUNT FAST SWITCHING DIODE ARRAY Features Mechanical Data • Fast Switching Speed • • Ultra-Small Surface Mount Package • • For General Purpose Switching Applications Case: SOT363 Case Material: Molded Plastic, “Green” Molding Compound.


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    MMBD4148TW BAS16TW OT363 J-STD-020D MIL-STD-202, DS30154 PDF

    Untitled

    Abstract: No abstract text available
    Text: MMDT3904 40V DUAL NPN SMALL SIGNAL TRANSISTOR IN SOT363 Features Mechanical Data • Epitaxial Planar Die Construction   Ideal for Medium Power Amplification and Switching  Case Material: Molded Plastic, “Green” Molding Compound,  Ultra-Small Surface Mount Package


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    MMDT3904 OT363 J-STD-020 AEC-Q101 MIL-STD202, DS30088 PDF

    Untitled

    Abstract: No abstract text available
    Text: MMDT3904 40V DUAL NPN SMALL SIGNAL TRANSISTOR IN SOT363 Features Mechanical Data • • • • • • • • • • • Case: SOT363 Case Material: Molded Plastic, “Green” Molding Compound UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020


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    MMDT3904 OT363 J-STD-020 MIL-STD202, AEC-Q101 DS30088 PDF

    Untitled

    Abstract: No abstract text available
    Text: DMN66D0LDW DUAL N-CHANNEL ENHANCEMENT MODE MOSFET V BR DSS RDS(ON) 60V 6Ω @ VGS = 5V 5Ω @ VGS = 10V Features and Benefits ID TA = +25°C 90mA 115mA Package SOT363 Description This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON) and yet maintain superior switching


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    DMN66D0LDW OT363 AEC-Q101 DS31232 PDF

    Untitled

    Abstract: No abstract text available
    Text: DMMT3906W 40V MATCHED PAIR PNP SMALL SIGNAL TRANSISTOR IN SOT363 Features Mechanical Data • BVCEO > -40V • • IC = -200mA High Collector Current • • • Pair of PNP Transistors That Are Intrinsically Matched Note 1 2% Matching on Current Gain (hFE)


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    DMMT3906W OT363 -200mA J-STD-020 MIL-STD-202, DS30312 PDF

    Untitled

    Abstract: No abstract text available
    Text: DMMT3904W 40V MATCHED PAIR NPN SMALL SIGNAL TRANSISTOR IN SOT363 Features Mechanical Data • • BVceo > 40V IC = 200mA high Collector Current • • • Pair of NPN transistors that are intrinsically matched Note 1 2% Matching on Current Gain (hFE) •


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    DMMT3904W OT363 200mA J-STD-020 MIL-STD-202, DS30311 PDF

    Untitled

    Abstract: No abstract text available
    Text: DMN65D8LDW Green DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS RDS(ON) Package 8Ω @ VGS = 5V 60V • • • • • • • • • • ID TA = +25°C 170mA SOT363 200mA 6Ω @ VGS = 10V Description This new generation MOSFET has been designed to minimize the


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    DMN65D8LDW OT363 170mA 200mA AEC-Q101 DS35500 PDF

    Untitled

    Abstract: No abstract text available
    Text: DSS8110Y 100V NPN LOW SATURATION TRANSISTOR IN SOT363 Features Mechanical Data • BVCEO > 100V  Case: SOT363  IC = 1A high Continuous Collector Current   ICM = 3A Peak Pulse Current Case Material: Molded Plastic, “Green” Molding Compound.


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    DSS8110Y OT363 J-STD-020 200mV DSS9110Y) MIL-STD-202, DS31679 PDF

    Untitled

    Abstract: No abstract text available
    Text: DMN65D8LDW Green DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS RDS(ON) Package 8Ω @ VGS = 5V 60V • • • • • • • • • • ID TA = +25°C 170mA SOT363 200mA 6Ω @ VGS = 10V Description This new generation MOSFET has been designed to minimize the


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    DMN65D8LDW 170mA OT363 200mA DS35500 PDF

    BC847PN

    Abstract: No abstract text available
    Text: BC847PN COMPLEMENTARY PAIR SMALL SIGNAL TRANSISTOR IN SOT363 Features Mechanical Data • Epitaxial Die Construction   Two Internally Isolated NPN/PNP Transistors in One Package   Ideal for Medium Power Amplification and Switching Case: SOT363


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    BC847PN OT363 J-STD-020 MIL-STD-202, DS30278 BC847PN PDF

    BC847B

    Abstract: No abstract text available
    Text: BC847PN COMPLEMENTARY PAIR SMALL SIGNAL TRANSISTOR IN SOT363 Features Mechanical Data • Epitaxial Die Construction   Two Internally Isolated NPN/PNP Transistors in One Package   Ideal for Medium Power Amplification and Switching Case: SOT363


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    BC847PN OT363 J-STD-020 MIL-STD-202, DS30278 BC847B PDF

    DMN65D

    Abstract: DMN65D8LDW DMN65D8LDW-7
    Text: DMN65D8LDW Green DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS RDS(ON) Package 8Ω @ VGS = 5V 60V • • • • • • • • • • ID TA = +25°C 170mA SOT363 200mA 6Ω @ VGS = 10V Description This new generation MOSFET has been designed to minimize the


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    DMN65D8LDW OT363 170mA 200mA AEC-Q101 DS35500 DMN65D DMN65D8LDW DMN65D8LDW-7 PDF

    Transistor 3904 Datasheet

    Abstract: No abstract text available
    Text: MMDT3946 40V COMPLEMENTARY NPN-PNP SMALL SIGNAL TRANSISTOR IN SOT363 Features Mechanical Data • • • • • • • • • Complementary Pair One 3904-Type NPN One 3906-Type PNP Ultra-Small Surface Mount Package Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching


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    MMDT3946 OT363 3904-Type 3906-Type AEC-Q101 J-STD-020 MIL-STD-202, DS30123 Transistor 3904 Datasheet PDF

    Untitled

    Abstract: No abstract text available
    Text: DMN65D8LDW DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features V BR DSS RDS(ON) Package 60V 8Ω @ VGS = 5V 6Ω @ VGS = 10V SOT363 ID TA = +25°C 170mA 200mA Description This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON) and yet maintain superior switching


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    DMN65D8LDW OT363 170mA 200mA DS35500 PDF