secos gmbh
Abstract: SMBJ11CA SM4005A SMBJ130CA SMBJ14CA SMBJ16CA SMBJ160CA BZV55C6V2 BZV55C12 SMBJ13CA
Text: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier Small Signal Bridge B1 - B2 General Rectifier C1 - C4 Fast Rectifier D1 - D3 》Super Fast Low Loss Super Fast E1 - E3 High Efficiency G1 - G3 Schottky H1 - H3 Switching I1- I3
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SC-59
SGSR809-A
SGSR809-B
SGSR809-C
SGSR809-D
SGSR809-E
secos gmbh
SMBJ11CA
SM4005A
SMBJ130CA
SMBJ14CA
SMBJ16CA
SMBJ160CA
BZV55C6V2
BZV55C12
SMBJ13CA
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PDF
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secos gmbh
Abstract: c945 p 331 transistor npn SM2150AM SM1150AM c945 p 331 transistor SMBJ11CA 2sd2142 SM4005A SSG8 pzt649
Text: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier C1 - C5 Fast Rectifier D1 - D3 Low Loss Super Fast Bridge E1 - E3 F1 High Efficiency G1 - G4 Schottky H1 - H3 Switching I1- I3 PiN Diode J1 Bridge Rectifier 》 Fast Bridge Rectifiers
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Original
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SGSR809-A
SC-59
SGSR809-B
SGSR809-C
SGSR809-D
SGSR809-E
secos gmbh
c945 p 331 transistor npn
SM2150AM
SM1150AM
c945 p 331 transistor
SMBJ11CA
2sd2142
SM4005A
SSG8
pzt649
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD TF215 Preliminary JFET N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR DESCRIPTION The UTC TF215 is an N-channel junction field effect transistor, and it can be specially used in electronic condenser microphone. FEATURES * Good voltage characteristics and transient characteristics.
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TF215
TF215
TF215G-x-AN3-R
OT-523
TF215-E3
TF215-E4
TF215-E5
QW-R206-096
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PDF
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD TF215 Preliminary JFET N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR DESCRIPTION The UTC TF215 is an N-channel junction field effect transistor, and it can be specially used in electronic condenser microphone. FEATURES * Good voltage characteristics and transient characteristics.
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TF215
TF215
TF215L-x-AN3-R
TF215G-x-AN3-R
OT-523
TF215-E3
TF215-E4
TF215-E5
QW-R206-096
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PDF
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD TF2123 N-CHANNEL JFET N-CHANNEL JFET CAPACITOR MICROPHONE APPLICATIONS DESCRIPTION The UTC TF2123 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use in capacitor microphone
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TF2123
TF2123
TF2123L-xx-AE3-R
TF2123G-xx-AE3-R
TF2123L-xx-AN3-R
TF2123G-xx-AN3-R
TF2123L-xx-AQ3-R
TF2123G-xx-AQ3-R
OT-23
OT-523
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PDF
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CAPACITOR MICROPHONE
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD TF2123 N-CHANNEL JFET N-CHANNEL JFET CAPACITOR MICROPHONE APPLICATIONS DESCRIPTION The UTC TF2123 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use in capacitor microphone
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Original
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TF2123
TF2123
TF2123G-xx-AE3-R
TF2123G-xx-AN3-R
TF2123G-xx-AQ3-R
TF2123L-xx-AE3-R
OT-23
OT-523
OT-723
QW-R206-106
CAPACITOR MICROPHONE
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PDF
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD TF202 N-CHANNEL JFET N-CHANNEL JFET CAPACITOR MICROPHONE APPLICATIONS DESCRIPTION The UTC TF202 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use in capacitor microphone
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Original
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TF202
TF202
TF202L-x-AE3-R
TF202G-x-AE3-R
TF202L-x-AN3-R
TF202G-x-AN3-R
TF202L-x-AC3-R
TF202G-x-AC3-R
TF202L-x-A3C-R
TF202G-x-A3C-R
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD TF202 N-CHANNEL JFET N-CHANNEL JFET CAPACITOR MICROPHONE APPLICATIONS DESCRIPTION The UTC TF202 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use in capacitor microphone
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Original
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TF202
TF202
TF202L-x-AE3-R
TF202G-x-AE3-R
TF202L-x-AN3-R
TF202G-x-AN3-R
TF202L-x-AC3-R
TF202G-x-AC3-R
TF202L-x-A3C-R
TF202G-x-A3C-R
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SOT-113S
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD TF202 N-CHANNEL JFET N-CHANNEL JFET CAPACITOR MICROPHONE APPLICATIONS DESCRIPTION The UTC TF202 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use in capacitor microphone
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Original
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TF202
TF202
TF202G-x-AE3-R
TF202G-x-AN3-R
TF202G-x-AC3-R
TF202L-x-A3C-R
TF202G-x-A3C-R
TF202G-x-AQ3-R
QW-R210-001
SOT-113S
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PowerDI5060-8L
Abstract: DFN1006-2 DFN1006-3 DFN1006H4-2 DFN1006H4-3 DFN1310H4-6 DFN1411-3 DFN1612-6 DFN1616-6 DFN1616-8
Text: PACKAGE OUTLINE DIMENSIONS Surface Mount Packages DFN1006-2 / DFN1006H4-2 A DFN1006-2 Dim Min Max Typ A 0.47 0.53 0.50 A1 0.05 0.03 b 0.45 0.55 0.50 D 0.95 1.075 1.00 E 0.55 0.675 0.60 e 0.40 L 0.20 0.30 0.25 R 0.05 0.15 0.10 All Dimensions in mm A1 D R E
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DFN1006-2
DFN1006H4-2
DFN1006-2
DFN1006-3
DFN1006H4-3
DFN1006-3
O92-3L
AP02002
PowerDI5060-8L
DFN1006H4-2
DFN1006H4-3
DFN1310H4-6
DFN1411-3
DFN1612-6
DFN1616-6
DFN1616-8
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PDF
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L30ESD24VC3_2
Abstract: SOT23-6L L30ESD24VC3-2
Text: LITEON-SEMI ESD Application • • • • Computing Portables Consumer Electronics. Networking & Comm. Portable Products Cellular Phone Speaker & MIC. MIC L13ESD5V0CE2 LEF01016F6-2 LEF03216F6-2 ANT. L10ESDL5V0CE2 External Memory L15ESDL5V0D6-4 LCD & Backligt
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L13ESD5V0CE2
LEF01016F6-2
LEF03216F6-2
L10ESDL5V0CE2
L15ESDL5V0D6-4
10001M8-4
LEF10001MC-6
LEF10001MG-8
L04ESD5V0CP2
L30ESD24VC3_2
SOT23-6L
L30ESD24VC3-2
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PDF
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD TF218 JFET N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR DESCRIPTION The UTC TF218 is an N-channel junction field effect transistor, and it can be specially used in electronic condenser microphone specially. FEATURES * Good voltage characteristics and transient characteristics.
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Original
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TF218
TF218
TF218L-x-AN3-R
TF218G-x-AN3-R
TF218L-x-AQ3-R
TF218G-x-AQ3-R
OT-523
OT-723
TF218-E3
TF218-E4
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PDF
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TF218
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD TF218 JFET N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR DESCRIPTION The UTC TF218 is an N-channel junction field effect transistor, and it can be specially used in electronic condenser microphone specially. FEATURES * Good voltage characteristics and transient characteristics.
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Original
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TF218
TF218
TF218G-x-AN3-R
TF218G-x-AQ3-R
OT-523
OT-723
TF218-E3
TF218-E4
TF218-E5
QW-R206-093
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PDF
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E3 SOT523
Abstract: DMN5L06TK
Text: Green DMN5L06TK N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data • • • • • • • • • • • Low On-Resistance Very Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage
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DMN5L06TK
AEC-Q101
OT523
J-STD-020D
MIL-STD-202,
DS30926
E3 SOT523
DMN5L06TK
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Untitled
Abstract: No abstract text available
Text: D5V0L1B2LP3 LOW CAPACITANCE BIDIRECTIONAL TVS DIODE Features Mechanical Data • Ultra-Small, Low Profile Leadless Surface Mount Package 0.6 * 0.3 * 0.3mm NEW PRODUCT Case: X3-DFN0603-2 Case Material: Molded Plastic, “Green” Molding Compound. UL
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X3-DFN0603-2
J-STD-020
MIL-STD-202,
DS35533
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Untitled
Abstract: No abstract text available
Text: D5V0L1B2S9 LOW CAPACITANCE BIDIRECTIONAL TVS DIODE Product Summary Features NEW PRODUCT VBR min 6V Ipp max 6A • Cin typ 15pF Provides ESD Protection per IEC 61000-4-2 Standard: Air ±30kV, Contact ±30kV Description This new generation TVS is designed to protect sensitive electronics
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DS36458
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DFN1616-8
Abstract: DFN1006-2 DFN1006-3 DFN1006H4-2 DFN1006H4-3 DFN1310H4-6 DFN1411-3 DFN1612-6 DFN1616-6 620E
Text: Package Outline Dimensions Surface Mount Packages DFN1006-2 / DFN1006H4-2 DFN1006H4-2 DFN1006-2 G H A R B C N D Dim Min Max Typ Min Max Typ A 0.95 1.075 1.00 0.95 1.075 1.00 B 0.55 0.675 0.60 0.55 0.675 0.60 C 0.45 0.55 0.50 0.45 0.55 0.50 D 0.20 0.30 0.25
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DFN1006-2
DFN1006H4-2
DFN1006-2
DFN1006-3
DFN1006H4-3
DFN1006-3
O92-3L
DFN1616-8
DFN1006H4-2
DFN1006H4-3
DFN1310H4-6
DFN1411-3
DFN1612-6
DFN1616-6
620E
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PDF
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DMN53D0LT
Abstract: No abstract text available
Text: DMN53D0LT N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary ID TA = +25°C • N-Channel MOSFET • Low On-Resistance 350 mA • Very Low Gate Threshold Voltage 200 mA • Low Input Capacitance • Fast Switching Speed • Low Input/ Output Leakage
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DMN53D0LT
DS37073
DMN53D0LT
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PDF
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DMN33D8L
Abstract: No abstract text available
Text: DMN33D8LT N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS ID TA = +25°C 200 mA 115 mA RDS(ON) 5 Ω @ VGS = 4V 7 Ω @ VGS = 2.5V 30V NEW PRODUCT NEW PRODUCT Features Description This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON) and yet maintain superior switching
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DMN33D8LT
DS37091
DMN33D8L
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PDF
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.H2 sot89
Abstract: DFN1006-2 DFN1006-3 DFN1006H4-2 DFN1006H4-3 DFN1310H4-6 DFN1411-3 DFN1612-6 DFN1616-6 DFN1616-8
Text: PACKAGE OUTLINE DIMENSIONS Surface Mount Packages DFN1006-2 / DFN1006H4-2 A DFN1006-2 Dim Min Max Typ A 0.47 0.53 0.50 A1 0.05 0.03 b 0.45 0.55 0.50 D 0.95 1.075 1.00 E 0.55 0.675 0.60 e 0.40 L 0.20 0.30 0.25 R 0.05 0.15 0.10 All Dimensions in mm A1 D R E
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DFN1006-2
DFN1006H4-2
DFN1006-2
DFN1006-3
DFN1006H4-3
DFN1006-3
O92-3L
AP02002
.H2 sot89
DFN1006H4-2
DFN1006H4-3
DFN1310H4-6
DFN1411-3
DFN1612-6
DFN1616-6
DFN1616-8
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PDF
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do-201 package
Abstract: DFN2020-3 SOD 523 0.85-1.25 DP SOT523 DFN1006-3 dfn3030-8 DFN1006-2 DFN1006H4-2 GBJ 1005 DFN1310H4-6
Text: PACKAGE OUTLINE DIMENSIONS Surface Mount Packages DFN1006-2 / DFN1006H4-2 A DFN1006-2 Dim Min Max Typ A 0.47 0.53 0.50 A1 0.05 0.03 b 0.45 0.55 0.50 D 0.95 1.075 1.00 E 0.55 0.675 0.60 e 0.40 L 0.20 0.30 0.25 R 0.05 0.15 0.10 All Dimensions in mm A1 D R E
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DFN1006-2
DFN1006H4-2
DFN1006-2
DFN1006-3
DFN1006H4-3
DFN1006-3
O92-3L
AP02002
do-201 package
DFN2020-3
SOD 523 0.85-1.25
DP SOT523
dfn3030-8
DFN1006H4-2
GBJ 1005
DFN1310H4-6
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PDF
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AA112A
Abstract: IPC-7351A
Text: PACKAGE OUTLINE DIMENSIONS AP02002 SUGGESTED PAD LAYOUT(AP02001) (Based on IPC-7351A) Table of Contents X4-DFN0402‐2/SWP . 10
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AP02002)
AP02001)
IPC-7351A)
DFN0402â
DFN0603â
DFN0606â
IPC-7351A,
AA112A
IPC-7351A
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PDF
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OZ8118
Abstract: ps223 SD CARD CONTROLLER CMD26 intel g31 msi G993P1UF RTL811C BGA969 5KR04 apa2057a intel g41 msi
Text: A B C D MS-1431 VER : 0.A E DC JACK & Selector Page 27 1 1 SYS POWER Penryn Page 3,4 HOST +3V +5V FSB 667/800/1066 TPS51120 Page 29 RGB CRT NORTH BRIDGE Page 15 LVDS LVDS 2 NB9M PCIE2.0 Page 15 HDMI HDMI INTEL Dual Channel DDRII 667/800 MHZ Page 31 2 DDR-SODIMM0
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MS-1431
TPS51120
TPS51124
RT9173BPS
OZ8118
8111B/C
H11----fuqun
MS-1431
OZ8118
ps223
SD CARD CONTROLLER CMD26
intel g31 msi
G993P1UF
RTL811C
BGA969
5KR04
apa2057a
intel g41 msi
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PDF
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SOT-95
Abstract: TO-252-4L sc59 dfn3030-8 MSOP-10 powerdi 123 DFN1006-3 DFN1006H4-2 WL-CSP1010H6-4 DFN1310H4-6
Text: PACKAGE OUTLINE DIMENSIONS Surface Mount Packages DFN1006-2 / DFN1006H4-2 A DFN1006-2 Dim Min Max Typ A 0.47 0.53 0.50 A1 0.05 0.03 b 0.45 0.55 0.50 D 0.95 1.075 1.00 E 0.55 0.675 0.60 e 0.40 L 0.20 0.30 0.25 R 0.05 0.15 0.10 All Dimensions in mm A1 D R E
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Original
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DFN1006-2
DFN1006H4-2
DFN1006-2
DFN1006-3
DFN1006H4-3
DFN1006-3
O92-3L
AP02002
SOT-95
TO-252-4L
sc59
dfn3030-8
MSOP-10
powerdi 123
DFN1006H4-2
WL-CSP1010H6-4
DFN1310H4-6
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PDF
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