BSM50GD60DN2E3226
Abstract: C67070-A2515-A67 E3226
Text: E3226 IGBT Power Module • Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate • E3226: long terminals, limited current per terminal Type VCE IC Package Ordering Code E3226
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BSM50GD60DN2E3226
E3226:
C67070-A2515-A67
Jan-10-1997
BSM50GD60DN2E3226
C67070-A2515-A67
E3226
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50GD120DN2E3226
Abstract: BSM50GD120DN2E3226 C67070-A2514-A67 E3226 GD120DN2E3226 IC-7060
Text: BSM 50 E3226 IGBT Power Module • Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate • E3226: long terminals, limited current per terminal Type VCE IC BSM 50 E3226 1200V 50A
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GD120DN2E3226
E3226:
C67070-A2514-A67
Jan-10-1997
50GD120DN2E3226
BSM50GD120DN2E3226
C67070-A2514-A67
E3226
GD120DN2E3226
IC-7060
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Untitled
Abstract: No abstract text available
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 50 GD 60 DLC E3226 vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung
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E3226
E3226
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E3226
Abstract: BSM 225
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 50 GD 60 DLC E3226 Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom
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E3226
E3226
BSM 225
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IGBT FF 300 r12
Abstract: bsm 75 gal 120 dlc IS3, diode GAL 700 1200V-Types bsm 50 Gb 120 IGBT DN2E3224 is4 239 IGBT FZ 1200 r12 IGBT FZ 600 R12
Text: Click on outline no. IGBT Standard Modules Type 600V-Types 3-Phase-Full-Bridges ! BSM 10 GD 60 DLC ! BSM 15 GD 60 DLC BSM 20 GD 60 DLC BSM 20 GD 60 DLC E3224 BSM 30 GD 60 DLC BSM 30 GD 60 DLC E3224 BSM 50 GD 60 DLC BSM 50 GD 60 DLC E3226 BSM 75 GD 60 DLC BSM 100 GD 60 DLC
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00V-Types
E3224
E3226
200V-Types
DN2E3224
120DN2
IGBT FF 300 r12
bsm 75 gal 120 dlc
IS3, diode
GAL 700
1200V-Types
bsm 50 Gb 120 IGBT
DN2E3224
is4 239
IGBT FZ 1200 r12
IGBT FZ 600 R12
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bsm 50 gd 120 dlc
Abstract: E3226
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 50 GD 60 DLC E3226 Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom
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E3226
bsm 50 gd 120 dlc
E3226
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BSM50GD120DLC
Abstract: No abstract text available
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM50GD120DLC E3226 Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom
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BSM50GD120DLC
E3226
E3226
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E3226
Abstract: GD120DN2
Text: -40.+125 2006-02-01 2006-02-01 2006-02-01 2006-02-01 2006-02-01 2006-02-01 2006-02-01 2006-02-01 BSM 50 GD 120 DN2 E3226 Gehäusemaße / Schaltbild Package outline / Circuit diagramm 9 2006-02-01 Nutzungsbedingungen Die in diesem Produktdatenblatt enthaltenen Daten sind ausschließlich für technisch geschultes Fachpersonal bestimmt. Die
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E3226
E3226
GD120DN2
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E3226
Abstract: bsm 50 gd 120 dlc
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 50 GD 60 DLC E3226 Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom
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E3226
E3226
bsm 50 gd 120 dlc
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V850E/IA1
Abstract: stk 1264 F8212 STK 1262 STK 403 130 stk 496 270 STk 412 120 stk 496 430 E2134 E1307
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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U17293CA2V0UM
V850E/IA1
stk 1264
F8212
STK 1262
STK 403 130
stk 496 270
STk 412 120
stk 496 430
E2134
E1307
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stk 412 490
Abstract: STK 403 130 STK 1262 stk 496 630 V850E/IA1 stk 403 - 130 F8212 stk 496 270 stk 1264 STk 442 120
Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社
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CA850
U18512JJ1V0UM001
U18512JJ1V0UM
stk 412 490
STK 403 130
STK 1262
stk 496 630
V850E/IA1
stk 403 - 130
F8212
stk 496 270
stk 1264
STk 442 120
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E3209
Abstract: E3252 IS1-SC.0.R1 E3239 CA850 ID850QB SM850 V850E V850E2 E3212
Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社
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CA850
U18514JJ1V0UM001
U18514JJ1V0UM
Corporat88
E3209
E3252
IS1-SC.0.R1
E3239
ID850QB
SM850
V850E
V850E2
E3212
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1756-EN2TR DIMENSION
Abstract: 1756-EN2TR IA-AT003 1756EN2TR 1585D-M4DC-H 1585D-M4DC-SH 1756-EN2T 1756-EN2T ethernet connection pin out 1732E-IB16M12 ab en2tr
Text: 1732E EtherNet/IP ArmorBlock Supporting Sequence of Events Catalog Number 1732E-IB16M12SOEDR User Manual Important User Information Solid state equipment has operational characteristics differing from those of electromechanical equipment. Safety Guidelines for the Application,
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1732E
1732E-IB16M12SOEDR
1732E-UM002A-EN-P
1756-EN2TR DIMENSION
1756-EN2TR
IA-AT003
1756EN2TR
1585D-M4DC-H
1585D-M4DC-SH
1756-EN2T
1756-EN2T ethernet connection pin out
1732E-IB16M12
ab en2tr
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EPCOS 350 06 O
Abstract: KTA0244-2-E B45192 E3226 KTA0209-E
Text: Tantalum Chip Capacitors B45192 Low Profile; H max = 1,5 mm; Standard and Low ESR Data sheets Construction • ■ ■ ■ ■ Polar tantalum capacitors with solid electrolyte Conventional Ta-MnO2 technology Flame-retardant plastic case UL 94 V-0 Tinned terminals
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B45192
EPCOS 350 06 O
KTA0244-2-E
B45192
E3226
KTA0209-E
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Allen-Bradley micrologix 1200
Abstract: 1762 micrologix 1200 c
Text: Installation Instructions MicroLogix 1200 Isolated Relay Output Module Catalog Number 1762-OX6I Table of Contents Topic Page Additional Resources 2 Description 3 Overview 3 Mounting 5 System Assembly 7 Field Wiring Connections 7 I/O Memory Mapping 10 Specifications
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1762-OX6I
1762-IN017C-EN-P
1762-UM001
RA-DU002,
1762-IN017B-EN-P
Allen-Bradley micrologix 1200
1762 micrologix 1200 c
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F8212
Abstract: E1307 F5020 F8050 equivalent F5022 f8432 f8050 E1203139 e2136 F5020 Transistor
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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G0706
F8212
E1307
F5020
F8050 equivalent
F5022
f8432
f8050
E1203139
e2136
F5020 Transistor
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F8212
Abstract: F8601 E1307 78K0R U19810EJ1V0UM00 E-032 E1204 F3415 V850E2V3 led message display projects f8432
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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U19810EJ1V0UM
F8212
F8601
E1307
78K0R U19810EJ1V0UM00
E-032
E1204
F3415
V850E2V3
led message display projects
f8432
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1762-oW16
Abstract: No abstract text available
Text: Installation Instructions MicroLogix 1762-OW16 Relay Output Module Catalog Number 1762-OW16 Table of Contents Topic Page Important User Information 2 North American Hazardous Location Approval 4 Additional Resources 5 Overview 6 Module Description 7 Mount the Module
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1762-OW16
1762-OW16
RA-DU002,
1762-IN009C-EN-P
1762-IN009B-EN-P
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GD120DN2E3226
Abstract: BSM 50 GD120DN2E3226 BSM50GD120DN2E3226
Text: SIEMENS BSM 50 E3226 IGBT Power Module • Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate • E3226: long terminals, limited current per terminal BSM 50 E3226 LU Type #c
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OCR Scan
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GD120DN2E3226
E3226:
GD120DN2E3226
C67070-A2514-A67
BSM 50 GD120DN2E3226
BSM50GD120DN2E3226
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Eupec BSM
Abstract: BSM50GD120DN2E3226 E3226 GD120DN2E3226 C67070-A2514-A67
Text: eupec BSM 50 E3226 IGBT Power Module • Power module • 3-phase fuN-bridge • Including fast free-wheel diodes • Package with insulated metal base plate • E3226: long terminals, limited current per terminal Type BSM 50 E3226 ^CE h 1200V 50A
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OCR Scan
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GD120DN2E3226
E3226:
C67070-A2514-A67
GD120PN2E3226
Eupec BSM
BSM50GD120DN2E3226
E3226
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diode bym
Abstract: DIODE ga 120DN2 E3224 C67076-A2007-A70
Text: SIEMENS Typ Type 600 V-Types 3-Phase-Full-Bridges BSM 1 0 G D 6 0 D N 2 BSM 1 5 G D 6 0 D N 2 BSM 2 0 G D 6 0 D N 2 BSM 20 GD 60 DN 2 E3224 BSM 30 GD 60 DN 2 BSM 30 GD 60 DN 2 E3224 BSM 50 GD 60 DN 2 BSM 50 GD 60 DN 2 E3226 Half-Bridges BSM 400 GB 60 DN 2
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OCR Scan
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E3224
E3226
C67070-A2300-A70
C67076-A2010-A70
diode bym
DIODE ga
120DN2
C67076-A2007-A70
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BSM50GD60DN2E3226
Abstract: No abstract text available
Text: SIEMENS E3226 IGBT Power Module • Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate • E3226: long terminals, limited current per terminal Type VCE lc Package Ordering Code
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OCR Scan
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BSM50GD60DN2E3226
E3226:
BSM50GD60DN2E3226
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Untitled
Abstract: No abstract text available
Text: IGBT Standard Modules Range Type 600 V-Types BSM BSM BSM BSM BSM BSM BSM 3-Phase-Full-Bridges Half-Bridges 1200 V-Types 3-Phase-Full-Bridges 8 Vce V 'c A 600 600 600 600 600 600 600 6x10 6x15 6x20 6x20 6x30 6x30 6x50 ^thjc K/W < ^tot W Vcesat V BSM 50 GD 60 DL E3226
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OCR Scan
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E3226
6x200
2x150
2x200
IS6/10
E3166
D0D2211
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DIODE ga 105
Abstract: No abstract text available
Text: SIEMENS Type Inhalt Table of Contents V„ I. R»* P« Vc«ut V A K/W W V Page 600 V-Types 3-Phase-Full-Bridges BSM 10G D 60D N 2 600 6 x 10 ¿3.5 35 2.1 77 BSM 15G D 60D N 2 600 6 x 15 ¿2.9 50 2.1 86 BSM 2 0 G D 6 0 D N 2 600 6x20 < 1.6 90 2.1 95 BSM 20 GD 60 DN 2 E3224
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E3224
E3226
2x400
DN2E3166
E3166
2x150
DIODE ga 105
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