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    E5 MMIC Search Results

    E5 MMIC Result Highlights (4)

    Part ECAD Model Manufacturer Description Download Buy
    ISL55016IRTZ-T7 Renesas Electronics Corporation MMIC Silicon Bipolar Differential Amplifier Visit Renesas Electronics Corporation
    ISL55014IEZ-T7 Renesas Electronics Corporation MMIC Silicon Bipolar Broadband Amplifier Visit Renesas Electronics Corporation
    ISL55012IEZ-EVAL Renesas Electronics Corporation MMIC Silicon Bipolar Broadband Amplifier Evaluation Board Visit Renesas Electronics Corporation
    ISL55015IEZ-T7 Renesas Electronics Corporation MMIC Silicon Bipolar Broadband Amplifier Visit Renesas Electronics Corporation

    E5 MMIC Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    "digital phase shifter"

    Abstract: 160 e7 mmic e3 mmic s5 MAPCGM0004-DIE P180 macom phase shifter
    Text: RO-P-DS-3051 - - MAPCGM0004-DIE 5-Bit Digital Phase Shifter 6.0-18.0 GHz Preliminary Information Features ♦ ♦ ♦ ♦ ♦ 6.0-18.0 GHz GaAs MMIC Phase 5 Bit Digital Phase Shifter 6.0 -18.0 GHz Operation 360º Coverage, LSB = 11.2º TTL Control Inputs Self-Aligned MSAG MESFET Process


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    PDF RO-P-DS-3051 MAPCGM0004-DIE MAPCGM0004-Die "digital phase shifter" 160 e7 mmic e3 mmic s5 P180 macom phase shifter

    MIP2F3

    Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
    Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the


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    PDF PAMP13-N1 MIP2F3 MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent

    mip411

    Abstract: MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291
    Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the


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    PDF PAMP13-N1 mip411 MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291

    Untitled

    Abstract: No abstract text available
    Text: Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com Report Title: Qualification Test Report Report Type: See Attached Date: See Attached QTR: 2013-00273 Wafer Process: PHEMT-G


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    PDF HMC599 HMC650 HMC651 HMC652 HMC653 HMC654 HMC655 HMC656 HMC657 HMC658

    Untitled

    Abstract: No abstract text available
    Text: BGA7204 400 MHz to 2750 MHz high linearity variable gain amplifier Rev. 2 — 18 January 2012 Product data sheet 1. Product profile 1.1 General description The BGA7204 MMIC is an extremely linear Variable Gain Amplifier VGA , operating from 0.4 GHz to 2.75 GHz. At minimum attenuation it has a gain of 18.5 dB, an output IP3 of


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    PDF BGA7204 BGA7204

    Untitled

    Abstract: No abstract text available
    Text: BGA7204 400 MHz to 2750 MHz high linearity variable gain amplifier Rev. 3 — 28 January 2013 Product data sheet 1. Product profile 1.1 General description The BGA7204 MMIC is an extremely linear Variable Gain Amplifier VGA , operating from 0.4 GHz to 2.75 GHz. At minimum attenuation it has a gain of 18.5 dB, an output


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    PDF BGA7204 BGA7204

    MARKING CODE E5 NXP

    Abstract: marking e2 mmic mmic n5
    Text: BGA7204 400 MHz to 2750 MHz high linearity variable gain amplifier Rev. 2 — 18 January 2012 Product data sheet 1. Product profile 1.1 General description The BGA7204 MMIC is an extremely linear Variable Gain Amplifier VGA , operating from 0.4 GHz to 2.75 GHz. At minimum attenuation it has a gain of 18.5 dB, an output IP3 of


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    PDF BGA7204 BGA7204 MARKING CODE E5 NXP marking e2 mmic mmic n5

    ERA-5

    Abstract: pl-261 mmic era-5 marking E5 amplifier ERA-5 Mini-Circuits RF Amplifier e5 monolithic amplifier MMIC Amplifier Micro-X marking mmic amplifier e5 TB-431-5 micro-X vv105 Package
    Text: Drop-In Monolithic Amplifier DC-4 GHz Product Features • DC-4 GHz • Single voltage supply • Internally matched to 50 ohms • Unconditionally stable • Low performance variation over temperature • Transient protected • Aqueous washable • Protected by US Patent 6,943,629


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    PDF VV105 2002/95/EC) C/85RH ERA-5 pl-261 mmic era-5 marking E5 amplifier ERA-5 Mini-Circuits RF Amplifier e5 monolithic amplifier MMIC Amplifier Micro-X marking mmic amplifier e5 TB-431-5 micro-X vv105 Package

    marking E5 amplifier

    Abstract: ERA-5SM
    Text: Surface Mount Monolithic Amplifier DC-4 GHz Product Features • DC-4 GHz • Single Voltage Supply • Internally matched to 50 Ohm • Unconditionally Stable • Low Performance Variation Over Temperature • Transient protected • Aqueous washable • Protected by US Patent 6,943,629


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    PDF WW107 2002/95/EC) C/85RH marking E5 amplifier ERA-5SM

    ERA-5SM

    Abstract: E5 mmic marking E5 PL-075 WW107 ERA5-SM MMIC Amplifier Micro-X marking N
    Text: Surface Mount Monolithic Amplifier DC-4 GHz Product Features • DC-4 GHz • Single Voltage Supply • Internally matched to 50 Ohm • Unconditionally Stable • Low Performance Variation Over Temperature • Transient protected • Aqueous washable • Protected by US Patent 6,943,629


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    PDF WW107 2002/95/EC) J-Std-020C C/85RH ERA-5SM E5 mmic marking E5 PL-075 WW107 ERA5-SM MMIC Amplifier Micro-X marking N

    ERA-5

    Abstract: MMIC Amplifier Micro-X marking PL-261 marking E5 amplifier
    Text: Drop-In Monolithic Amplifier DC-4 GHz Product Features • DC-4 GHz • Single voltage supply • Internally matched to 50 ohms • Unconditionally stable • Low performance variation over temperature • Transient protected • Aqueous washable • Protected by US Patent 6,943,629


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    PDF VV105 2002/95/EC) C/85RH AS9100 ERA-5 MMIC Amplifier Micro-X marking PL-261 marking E5 amplifier

    marking E5 amplifier

    Abstract: ERA-5SM ERA-5SME5
    Text: Surface Mount Monolithic Amplifier DC-4 GHz Product Features • DC-4 GHz • Single Voltage Supply • Internally matched to 50 Ohm • Unconditionally Stable • Low Performance Variation Over Temperature • Transient protected • Aqueous washable • Protected by US Patent 6,943,629


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    PDF WW107 2002/95/EC) C/85RH AS9100 marking E5 amplifier ERA-5SM ERA-5SME5

    mmic era-5

    Abstract: marking E5 amplifier ERA-5 marking E5 e5 monolithic amplifier PL-261 VV105 TB-431
    Text: Drop-In Monolithic Amplifier DC-4 GHz Product Features • DC-4 GHz • Single voltage supply • Internally matched to 50 ohms • Unconditionally stable • Low performance variation over temperature • Transient protected • Aqueous washable • Protected by US Patent 6,943,629


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    PDF VV105 2002/95/EC) J-Std-020C C/85RH mmic era-5 marking E5 amplifier ERA-5 marking E5 e5 monolithic amplifier PL-261 VV105 TB-431

    E5 mmic

    Abstract: marking E5 ERA-5SM PL-075 WW107 microwave radio specs MMIC Amplifier Micro-X marking marking E5 amplifier
    Text: Surface Mount Monolithic Amplifier DC-4 GHz Product Features • DC-4 GHz • Single Voltage Supply • Internally matched to 50 Ohm • Unconditionally Stable • Low Performance Variation Over Temperature • Transient protected • Protected by US Patent 6,943,629


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    PDF WW107 2002/95/EC) J-Std-020C C/85RH E5 mmic marking E5 ERA-5SM PL-075 WW107 microwave radio specs MMIC Amplifier Micro-X marking marking E5 amplifier

    RF 3132 pinout

    Abstract: TGA4903-SM
    Text: TGA4903-SM Ka-Band Medium Power Amplifier Key Features Measured Performance Bias conditions: Vd = 5 V, Id = 170 mA, Vg = -0.6 V, Typical • • • • • Frequency Range: 27 - 32 GHz Psat: 24 dBm, P1dB: 22 dBm Gain: 15 dB Return Loss: 10 dB Bias: Vd = 5 V, Id = 170 mA, Vg = -0.6 V


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    PDF TGA4903-SM TGA4903-SM RF 3132 pinout

    Untitled

    Abstract: No abstract text available
    Text: Drop-In Monolithic Ampli er DC-4 GHz Product Features •฀DC-4฀GHz฀ •฀Single฀voltage฀supply •฀Internally฀matched฀to฀50฀ohms •฀Unconditionally฀stable •฀Low฀performance฀variation฀over฀temperature •฀Transient฀protected


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    PDF VV105

    Untitled

    Abstract: No abstract text available
    Text: Surface Mount Monolithic Amplifier DC-4 GHz Product Features • DC-4 GHz • Single Voltage Supply • Internally matched to 50 Ohms • Unconditionally Stable • Low Performance Variation Over Temperature • Transient protected • Aqueous washable • Protected by US Patent 6,943,629


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    PDF WW107

    Untitled

    Abstract: No abstract text available
    Text: Drop-In Monolithic Amplifier DC-4 GHz Product Features • DC-4 GHz • Single voltage supply • Internally matched to 50 ohms • Unconditionally stable • Low performance variation over temperature • Transient protected • Aqueous washable • Protected by US Patent 6,943,629


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    PDF VV105

    Untitled

    Abstract: No abstract text available
    Text: FEATURES • DC - 6 GHz Frequency Range ^ 3 ■ 5 nSec Switching Speed CC MODEL NO. P35-4246-0 ■ Low Insertion Loss GaAs MMIC Transfer Switch ■ Ultra Low DC Power Consumption ■ Plastic Package Available - P/N P35-4246-3 1 2 BOND PAD CONFIGURATION 81


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    PDF P35-4246-0 P35-4246-3

    MMIC code D

    Abstract: 10 GHz pin diode 60 GHz PIN diode gaas E5 MMIC iso/8879-1986/gp131 diode
    Text: MICRONETICS INC blll7M5 Q Q O G 3 4 cl Q EHMRO 34E D 'T - S > 'U A - T ^ t- T J b Single Pole Five Throw LOW BAND 10 MHz to 1000 MHz GaAs MMIC HIGH BAND 1 GHz to 18.5 GHz (PIN Diode) a D E SeR IB -T I •GaAs, MMIC and PIN diode technology •High reliability


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    PDF J10006 MIL-STD-883 MIL-STD-105 MMIC code D 10 GHz pin diode 60 GHz PIN diode gaas E5 MMIC iso/8879-1986/gp131 diode

    Untitled

    Abstract: No abstract text available
    Text: That HEW LETT WHkM PA CK A R D Digital Radio Receiver Down Converter Modules for 37 to 40 GHz Technical Data DRR1-38XX Features Description • Low Noise PHEMT MMIC Front End Amplifier • Image Reject Mixer • Integrated Silicon Bipolar VCO Local Oscillator


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    PDF DRR1-38XX WR-28

    A13F

    Abstract: No abstract text available
    Text: NJG1550F G aAs MIXER IC for 800 MHz band GENERAL DESCRIPTION NJG1550F is a GaAs MMIC Mixer built-in local amplifier for 800 MHz band Personal Digital Cellular. It features a low current consumption ,a high conversion gain and a low noise figure . It is adopted a very small MTP6 package.


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    PDF NJG1550F NJG1550F 820MHz, -10dBm, -30dBm 820MHzs -10dBnru A13F

    Catalog JRC

    Abstract: GRM39 HK1608 NJG1550F 34B DBM MARK
    Text: NJG1550F G aAs MIXER IC for 800 MHz band GENERAL DESCRIPTION NJG1550F is a GaAs MMIC Mixer built-in local amplifier for 800 MHz band Personal Digital Cellular. It features a low current consumption ,a high conversion gain and a low noise figure . It is adopted a very small MTP6 package.


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    PDF NJG1550F NJG1550F 820MHz, -30dBm 820MHzs -10dBm, Catalog JRC GRM39 HK1608 34B DBM MARK

    Untitled

    Abstract: No abstract text available
    Text: 1 h - . u n ; - 1 >1 o ^ il ; , I ' -, h 2 . 2 ^ P a p, e il il 2 PRELIMINARY DATA SHEET NEC / BIPOLAR ANALOG INTEGRATED CIRCUITS juPC2746T, 2747T, 2748T 3 V BIAS SILICON MMIC AMPLIFIRES FOR 900 MHz BAND MOBILE TELEPHONE FEATURES • L o w v o lta g e o p e ra tio n - S in g le s u p p ly v o lta g e 3 .0 V T Y P . m in im u m o p e ra tin g v o lta g e 1.8 V


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    PDF juPC2746T 2747T, 2748T PC2747T: bM27525